Works matching Transistor Technologies

Results: 820

2D Dielectrophoresis using an active matrix array made by thin‐film‐transistor technology.

Published in:

IEEJ Transactions on Electrical & Electronic Engineering, 2019, v. 14, n. 9, p. 1280, doi. 10.1002/tee.22979

By:

Tixier‐Mita, Agnès;
Ihida, Satoshi;
Blanchard, Damien;
Shinohara, Marie;
Eiler, Anne‐Claire;
Cathcart, Grant Alexander;
Faure, Pierre‐Marie;
Kohno, Takashi;
Sakai, Yasuyuki;
Lévi, Timothée;
Toshiyoshi, Hiroshi

Publication type:

Article

Study of the UTBB BESOI Tunnel-FET Working as a Dual-Technology Transistor.

Published in:

Journal of Integrated Circuits & Systems, 2021, v. 16, n. 2, p. 1, doi. 10.29292/jics.v16i2.208

By:

Mori, Carlos A. B.;
Agopian, Paula G. D.;
Martino, João A.

Publication type:

Article

Design of energy‐efficient ternary circuits using differential cascode voltage switch strategies in carbon nanotube field effect transistor technology.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 7, p. 1077, doi. 10.1049/iet-cds.2019.0375

By:

Sharma, Trapti;
Kumre, Laxmi

Publication type:

Article

An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04022

By:

Hatefinasab, Seyedehsomayeh

Publication type:

Article

Technology and Modeling of Nonclassical Transistor Devices.

Published in:

Journal of Electrical & Computer Engineering, 2019, p. 1, doi. 10.1155/2019/4792461

By:

Angelov, George V.;
Nikolov, Dimitar N.;
Hristov, Marin H.

Publication type:

Article

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors.

Published in:

Sensors (14248220), 2019, v. 19, n. 11, p. 2454, doi. 10.3390/s19112454

By:

Božanić, Mladen;
Sinha, Saurabh

Publication type:

Article

ANALYSIS OF THE USE OF TRANSISTORS BASED ON SiC TECHNOLOGY IN INVERTERS IN THE CONTEXT OF ELECTROMAGNETIC COMPATIBILITY.

Published in:

Technical Transactions / Czasopismo Techniczne, 2016, v. 1-M, n. 2, p. 33, doi. 10.4467/2353737XCT.16.027.5289

By:

CZUCHRA, WOJCIECH;
MYSIŃSKI, WOJCIECH;
WOSZCZYNA, BARTOSZ

Publication type:

Article

BSIM3v3 Characterization and Simulation of MOS Si1-xGex Transistors with 130 nm Submicron Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04021

By:

Hebali, M.;
Bennaoum, M.;
Benzohra, M.;
Chalabi, D.;
Saïdane, A.

Publication type:

Article

Thin Film Transistors Gas Sensors: Materials, Manufacturing Technologies and Test Results.

Published in:

Electronics & Electrical Engineering, 2009, n. 89, p. 39

By:

Pereira, M. C.;
Martins, M. J.;
Bonnaud, O.

Publication type:

Article

An Asynchronous Design for Testability and Implementation in Thin-film Transistor Technology.

Published in:

Journal of Electronic Testing, 2011, v. 27, n. 2, p. 193, doi. 10.1007/s10836-011-5195-x

By:

Cheng, Chi-Hsuan;
Li, James

Publication type:

Article

基于低温多晶硅-氧化物半导体混合集成的薄膜晶体管显示背板技术.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2021, v. 36, n. 2, p. 1, doi. 10.37188/CJLCD.2020-0268

By:

邓立昂;
陈世林;
黄博天;
郭小军

Publication type:

Article

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100290

By:

Alim, Mohammad A.;
Naima, Jannatul;
Rezazadeh, Ali A.

Publication type:

Article

High-power microwave LDMOS transistors for wireless data transmission technologies (Review).

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1669, doi. 10.1134/S1063782610130105

By:

Kuznetsov, E.;
Shemyakin, A.

Publication type:

Article

Evaluation of safety and efficacy of insulated-gate bipolar transistor holmium laser technology for prostate enucleation in canine model: a preliminary study.

Published in:

Lasers in Medical Science, 2024, v. 39, n. 1, p. 1, doi. 10.1007/s10103-024-04155-3

By:

Sun, Jie;
Sherryn, Sherryn;
Tong, Zhen;
Xia, Shengqiang;
Chen, Bin

Publication type:

Article

Organic Electrochemical Transistors: An Emerging Technology for Biosensing.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 6, p. 1, doi. 10.1002/admi.202102039

By:

Marks, Adam;
Griggs, Sophie;
Gasparini, Nicola;
Moser, Maximilian

Publication type:

Article

260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.-G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.-S.

Publication type:

Article

260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.‐G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.‐S.

Publication type:

Article

Rapid and Highly Sensitive Detection of Leishmania by Combining Recombinase Polymerase Amplification and Solution-Processed Oxide Thin-Film Transistor Technology.

Published in:

Biosensors (2079-6374), 2023, v. 13, n. 8, p. 765, doi. 10.3390/bios13080765

By:

Wu, Weidong;
Biyani, Manish;
Hirose, Daisuke;
Takamura, Yuzuru

Publication type:

Article

An energy‐efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 4, p. 360, doi. 10.1049/cds2.12112

By:

Mahmoodian, Hamid;
Dolatshahi, Mehdi;
Zanjani, S. Mohammadali;
Honarvar, Mohammad Amin

Publication type:

Article

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259

By:

Fuchsberger, Andreas;
Wind, Lukas;
Sistani, Masiar;
Behrle, Raphael;
Nazzari, Daniele;
Aberl, Johannes;
Prado Navarrete, Enrique;
Vukŭsić, Lada;
Brehm, Moritz;
Schweizer, Peter;
Vogl, Lilian;
Maeder, Xavier;
Weber, Walter M.

Publication type:

Article

A new factor for fabrication technologies evaluation for silicon nanowire transistors.

Published in:

Telkomnika, 2020, v. 18, n. 5, p. 2597, doi. 10.12928/TELKOMNIKA.v18i5.12121

By:

Hashim, Yasir;
Nazmus Shakib, Mohammed

Publication type:

Article

COMPARISON OF TWO GAN TRANSISTOR TECHNOLOGIES IN BROADBAND POWER AMPLIFIERS.

Published in:

Microwave Journal, 2010, v. 53, n. 4, p. 184

By:

Azam, S.;
Svenson, C.;
Wahab, Q.;
Jonsson, R.

Publication type:

Article

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-01917-9

By:

Liu, Yang;
Lv, Yuanjie;
Guo, Shuoshuo;
Luan, Zhengfang;
Cheng, Aijie;
Lin, Zhaojun;
Yang, Yongxiong;
Jiang, Guangyuan;
Zhou, Yan

Publication type:

Article

Design of unbalanced 9:2 ternary encoder and 2:9 ternary decoder circuits in resistive random access memory and carbon nanotube field effect transistor technology.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 10, p. 5403, doi. 10.1002/cta.4022

By:

Khurshid, Tabassum;
Singh, Vikram

Publication type:

Article

Development of an Improved Zinc Oxide Thin Film Transistor for Next-Generation Smartphone Display Technologies.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2025, v. 55, n. 2, p. 103, doi. 10.33180/InfMIDEM2025.204

By:

Bose, Anindya;
Biswas, Sayori;
Sengupta, Sarthak

Publication type:

Article

Insulated Gate Bipolar Transistor Junction Temperature Estimation Technology for Traction Inverters Using a Thermal Model.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 5, p. 999, doi. 10.3390/electronics14050999

By:

Kong, Kijung;
Choi, Junhwan;
Park, Geonhyeong;
Baek, Seungmin;
Ju, Sungeun;
Han, Yongsu

Publication type:

Article

Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 2, p. 180, doi. 10.3390/electronics10020180

By:

Seon, Yoongeun;
Chang, Jeesoo;
Yoo, Changhyun;
Jeon, Jongwook

Publication type:

Article

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400592

By:

Yazdani, Hossein;
Beleniotis, Petros;
Brunner, Frank;
Ostermay, Ina;
Würfl, Joachim;
Rudolph, Matthias;
Heinrich, Wolfgang;
Hilt, Oliver

Publication type:

Article

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202300953

By:

Li, Hanchao;
Xie, Hanlin;
Wang, Yue;
Yulia, Lekina;
Ranjan, Kumud;
Singh, Navab;
Chung, Surasit;
Lee, Kenneth E.;
Arulkumaran, Subramaniam;
Ing Ng, Geok

Publication type:

Article

Suppression of Reverse Leakage in Enhancement‐Mode GaN High‐Electron‐Mobility Transistor by Extended PGaN Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200692

By:

Dai, Xinyue;
Ji, Zhongchen;
Jiang, Qimeng;
Huang, Sen;
Fan, Jie;
Feng, Chao;
Jin, Hao;
Tang, Xiaotian;
Wang, Xinhua;
Liu, Xinyu

Publication type:

Article

ULTRA-THIN SOI TRANSISTORS FOR ULTIMATE CMOS TECHNOLOGY: FUNDAMENTAL PROPERTIES AND APPLICATIONS PERSPECTIVES.

Published in:

International Journal of High Speed Electronics & Systems, 2002, v. 12, n. 2, p. 333, doi. 10.1142/S0129156402001290

By:

Esseni, D.;
Sangiorgi, E.;
Mastrapasqua, M.;
Fiegna, C.;
Celler, G.K.;
Selmi, L.

Publication type:

Article

SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 1994, v. 5, n. 3, p. 473, doi. 10.1142/S012915649400019X

By:

MEYERSON, B.S.;
HARAME, D.L.;
STORK, J.;
CRABBE, E.;
COMFORT, J.;
PATTON, G.

Publication type:

Article

Transparent In/SeO2 Thin Film Transistors Designed for Gigahertz/Terahertz Technologies.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5617, doi. 10.1007/s11664-022-09834-x

By:

Qasrawi, A. F.;
Daragme, Rana B.

Publication type:

Article

Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 9, p. 1150, doi. 10.3390/cryst11091150

By:

Hernandez, Yoanlys;
Stampfer, Bernhard;
Grasser, Tibor;
Waltl, Michael

Publication type:

Article

A Fundamental Reason for the Need of Two Different Semiconductor Technologies for Complementary Thin-Film Transistor Operations.

Published in:

Crystals (2073-4352), 2019, v. 9, n. 11, p. 603, doi. 10.3390/cryst9110603

By:

Jang, Jiung;
Lee, Sungsik

Publication type:

Article

Carbon nanotube transistor technology for More-Moore scaling.

Published in:

Nano Research, 2021, v. 14, n. 9, p. 3051, doi. 10.1007/s12274-021-3459-z

By:

Cao, Qing

Publication type:

Article

Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.

Published in:

Pediatric Radiology, 2013, v. 43, n. 9, p. 1108, doi. 10.1007/s00247-013-2674-5

By:

Emigh, Brent;
Gordon, Christopher;
Connolly, Bairbre;
Falkiner, Michelle;
Thomas, Karen

Publication type:

Article

Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors

Published in:

IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2322, doi. 10.1049/iet-pel.2015.0009

By:

Longobardi, Giorgia;
Udrea, Florin;
Sque, Stephen;
Croon, Jeroen;
Hurkx, Fred;
Šonský, Jan

Publication type:

Article

基于微增材技术制造的氧化铟镓锌薄膜晶体管及其性能.

Published in:

Electronic Components & Materials, 2021, v. 40, n. 12, p. 1171, doi. 10.14106/j.cnki.1001-2028.2021.0403

By:

张奇;
崔西会;
方杰;
项徽清;
刘建国

Publication type:

Article

Arc extinction of DC side low-voltage breaker of charging device for battery pack in power plant based on insulated-gate bipolar transistor module series technology.

Published in:

Journal of Engineering, 2019, v. 2019, n. 4, p. 2312, doi. 10.1049/joe.2018.8613

By:

Yao, Fang;
Zhao, Wangwang;
Wang, Jie;
Li, Zhigang

Publication type:

Article

Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.

Published in:

Small, 2015, v. 11, n. 41, p. 5472, doi. 10.1002/smll.201501350

By:

Labram, John G.;
Lin, Yen‐Hung;
Anthopoulos, Thomas D.

Publication type:

Article

THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy.

Published in:

Opto-Electronics Review, 2018, v. 26, n. 4, p. 261, doi. 10.1016/j.opelre.2018.08.002

By:

Marczewski, J.;
Coquillat, D.;
Knap, W.;
Kolacinski, C.;
Kopyt, P.;
Kucharski, K.;
Lusakowski, J.;
Obrebski, D.;
Tomaszewski, D.;
Yavorskiy, D.;
Zagrajek, P.;
Ryniec, R.;
Palka, N.

Publication type:

Article

Emerging Thin‐Film Transistor Technologies and Applications.

Published in:

Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.202001678

By:

Anthopoulos, Thomas D.;
Noh, Yong‐Young;
Jurchescu, Oana D.

Publication type:

Article

Microwave diamond devices technology: Field‐effect transistors and modeling.

Published in:

International Journal of Numerical Modelling, 2021, v. 34, n. 1, p. 1, doi. 10.1002/jnm.2800

By:

Chen, Zhihao;
Fu, Yu;
Kawarada, Hiroshi;
Xu, Yuehang

Publication type:

Article

Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit: (Invited).

Published in:

International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2579

By:

Zhang, Yong;
Chen, Yapei;
Li, Yukun;
Qu, Kun;
Ren, Tianhao

Publication type:

Article

Design of an oscillator with low phase noise and medium output power in a 0.25 μm GaN-on-SiC high electron-mobility transistors technology.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2015, v. 9, n. 8, p. 795, doi. 10.1049/iet-map.2014.0449

By:

Hang Liu;
Xi Zhu;
Chirn Chye Boon;
Xiang Yi

Publication type:

Article

Development of an ion-sensitive field effect transistor based on PVC membrane technology with improved long-term stability.

Published in:

Electroanalysis, 1997, v. 9, n. 4, p. 316, doi. 10.1002/elan.1140090411

By:

Jiménez, Cecilia;
Bartroli, Jordi

Publication type:

Article

Effect of different transistor technologies on physical design of arithmatic logic unit.

Published in:

Journal of Computer & Electrical & Electronics Engineering Sciences (JCEEES), 2025, v. 3, n. 1, p. 1, doi. 10.51271/JCEEES-0021

By:

Korum, Merve Özcan;
Kaçar, Fırat

Publication type:

Article

ADVANCEMENTS IN CELLULOSE/REDUCED GRAPHENE OXIDE COMPOSITES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS IN TRANSISTOR TECHNOLOGIES.

Published in:

International Journal of Mechatronics & Applied Mechanics, 2024, n. 16, p. 185

By:

Ramezani, Ghazaleh;
Stiharu, Ion;
van de Ven, Theo G. M.;
Nerguizian, Vahe

Publication type:

Article

Flexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-023-44024-1

By:

Uguz, Ilke;
Ohayon, David;
Arslan, Volkan;
Sheelamanthula, Rajendar;
Griggs, Sophie;
Hama, Adel;
Stanton, John William;
McCulloch, Iain;
Inal, Sahika;
Shepard, Kenneth L.

Publication type:

Article