Works matching DE "INDIUM gallium zinc oxide"
Results: 965
Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs.
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- Micromachines, 2025, v. 16, n. 2, p. 141, doi. 10.3390/mi16020141
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IGZO-Based Electronic Device Application: Advancements in Gas Sensor, Logic Circuit, Biosensor, Neuromorphic Device, and Photodetector Technologies.
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- Micromachines, 2025, v. 16, n. 2, p. 118, doi. 10.3390/mi16020118
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Effect of Polypyrimidine Structure and Purity of Semiconducting SWCNTs on Thin‐Film Transistor Performance.
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- Macromolecular Chemistry & Physics, 2021, v. 222, n. 18, p. 1, doi. 10.1002/macp.202100196
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Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition.
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- Chemistry - A European Journal, 2024, v. 30, n. 33, p. 1, doi. 10.1002/chem.202400013
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N‐Acenoacenes: Synthesis and Solid‐State Properties.
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- Chemistry - A European Journal, 2022, v. 28, n. 69, p. 1, doi. 10.1002/chem.202201916
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Bimetallic Ruthenium Nitrosyl Complexes with Enhanced Two‐Photon Absorption Properties for Nitric Oxide Delivery.
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- Chemistry - A European Journal, 2022, v. 28, n. 62, p. 1, doi. 10.1002/chem.202201692
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Imide‐Functionalized Fluorenone and Its Cyanated Derivative Based n‐Type Polymers: Synthesis, Structure–Property Correlations, and Thin‐Film Transistor Performance.
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- Angewandte Chemie, 2022, v. 134, n. 32, p. 1, doi. 10.1002/ange.202205315
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Nitrogen‐Doped Amorphous Zn–Carbon Multichannel Fibers for Stable Lithium Metal Anodes.
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- Angewandte Chemie, 2021, v. 133, n. 15, p. 8596, doi. 10.1002/ange.202100471
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Indandione‐Terminated Quinoids: Facile Synthesis by Alkoxide‐Mediated Rearrangement Reaction and Semiconducting Properties.
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- Angewandte Chemie, 2020, v. 132, n. 1, p. 227, doi. 10.1002/ange.201911530
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Photo-Insensitive Amorphous Oxide Thin-Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics.
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- Advanced Functional Materials, 2014, v. 24, n. 23, p. 3482, doi. 10.1002/adfm.201304114
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Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study.
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- 2024
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- Correction Notice
Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03816-6
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- Article
Review and analysis of SiC MOSFETs' ruggedness and reliability.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 445, doi. 10.1049/iet-pel.2019.0587
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Lateral and vertical power transistors in GaN and Ga<sub>2</sub>O<sub>3</sub>.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0059
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- Article
Functional polymeric passivation-led improvement of bias stress with long-term durability of edge-rich nanoporous MoS<sub>2</sub> thin-film transistors.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00296-7
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2D transistors rapidly printed from the crystalline oxide skin of molten indium.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00294-9
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- Article
Functional polymeric passivation-led improvement of bias stress with long-term durability of edge-rich nanoporous MoS<sub>2</sub> thin-film transistors.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00296-7
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- Article
Interfacial and confined molecular-assembly of poly(3-hexylthiophene) and its application in organic electronic devices.
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- Science & Technology of Advanced Materials, 2022, v. 23, n. 1, p. 619, doi. 10.1080/14686996.2022.2125826
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- Article
The Structural Modulation of Amorphous 2D Tungsten Oxide Materials in Magnetron Sputtering.
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- Advanced Materials Interfaces, 2022, v. 9, n. 35, p. 1, doi. 10.1002/admi.202201790
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- Article
Nanolaminated HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates.
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- Advanced Materials Interfaces, 2022, v. 9, n. 32, p. 1, doi. 10.1002/admi.202201477
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Low Cost, Al<sub>2</sub>O<sub>3</sub> and ZrAlO<sub>x</sub> Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 26, p. 1, doi. 10.1002/admi.202200906
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- Article
Indium and Tin Doping of Zinc Oxide Film by Cation Exchange and its Application to Low‐Temperature Thin‐Film Transistors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 23, p. 1, doi. 10.1002/admi.202200190
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- Article
Characteristics of ALD‐ZnO Thin Film Transistor Using H<sub>2</sub>O and H<sub>2</sub>O<sub>2</sub> as Oxygen Sources.
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- Advanced Materials Interfaces, 2022, v. 9, n. 15, p. 1, doi. 10.1002/admi.202101953
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- Article
Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment.
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- Advanced Materials Interfaces, 2022, v. 9, n. 14, p. 1, doi. 10.1002/admi.202102349
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- Article
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors (Adv. Mater. Interfaces 10/2022).
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- Advanced Materials Interfaces, 2022, v. 9, n. 10, p. 1, doi. 10.1002/admi.202200032
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- Article
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 10, p. 1, doi. 10.1002/admi.202200032
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- Article
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors (Adv. Mater. Interfaces 10/2022).
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- Advanced Materials Interfaces, 2022, v. 9, n. 10, p. 1, doi. 10.1002/admi.202270051
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- Article
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 10, p. 1, doi. 10.1002/admi.202200032
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- Article
A Bottom‐Electrode Contact: The Most Suitable Structure for Graphene Electronics.
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- Advanced Materials Interfaces, 2022, v. 9, n. 6, p. 1, doi. 10.1002/admi.202102207
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- Article
Electrochemically and Mechanically Regulated Liquid Metal Gate via Giant Surface Tension Alteration.
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- Advanced Materials Interfaces, 2021, v. 8, n. 18, p. 1, doi. 10.1002/admi.202100954
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- Article
Defect‐Engineered n‐Doping of WSe<sub>2</sub> via Argon Plasma Treatment and Its Application in Field‐Effect Transistors.
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- Advanced Materials Interfaces, 2021, v. 8, n. 14, p. 1, doi. 10.1002/admi.202100718
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- Article
Ambipolar Plasmon‐Enhanced Photodetector Built on Germanium Nanodots Array/Graphene Hybrid.
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- Advanced Materials Interfaces, 2020, v. 7, n. 20, p. 1, doi. 10.1002/admi.202001122
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- Article
Low‐Damaged Layer‐by‐Layer Etching of Large‐Area Molybdenum Disulfide Films via Mild Plasma Treatment.
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- Advanced Materials Interfaces, 2020, v. 7, n. 17, p. 1, doi. 10.1002/admi.202000762
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- Article
Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si<sub>3</sub>N<sub>4</sub>(0001)/Si(111).
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- Advanced Materials Interfaces, 2020, v. 7, n. 11, p. 1, doi. 10.1002/admi.201902175
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- Article
High‐Performance P‐Type Copper(I) Thiocyanate Thin Film Transistors Processed from Solution at Low Temperature.
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- Advanced Materials Interfaces, 2019, v. 6, n. 19, p. N.PAG, doi. 10.1002/admi.201900883
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- Article
High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor.
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- Advanced Materials Interfaces, 2019, v. 6, n. 13, p. N.PAG, doi. 10.1002/admi.201900277
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- Article
Ultralow-Temperature Sol-Gel Route to Metal Oxide Semiconductors for Soft Platforms.
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- Advanced Materials Interfaces, 2016, v. 3, n. 20, p. n/a, doi. 10.1002/admi.201600664
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- Article
Impedance Spectroscopy Analysis of Structural Defects in Sputtered ZnO Films.
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- ChemElectroChem, 2020, v. 7, n. 9, p. 2055, doi. 10.1002/celc.202000087
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- Article
Oxide Thin-Film Transistors on Fibers for Smart Textiles.
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- Technologies (2227-7080), 2017, v. 5, n. 2, p. 31, doi. 10.3390/technologies5020031
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- Article
Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-81556-y
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Dual-biased metal oxide electrolyte-gated thin-film transistors for enhanced protonation in complex biofluids.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-80005-0
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- Article
Wettability of the Cotton and Polyester Fabrics Coated by Nanostructured Indium-doped Zinc Oxide Layers.
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- Journal of Nano- & Electronic Physics, 2021, v. 13, n. 2, p. 02036-1, doi. 10.21272/jnep.13(2).02036
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- Article
Single Electron Transistor Based on Endohedral Metallofullerenes Me@C<sub>60</sub> (Me = Li, Na, K).
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 3, p. 1, doi. 10.21272/jnep.12(3).03017
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- Article
Indium oxide nanomesh-based electrolyte-gated synaptic transistors.
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- Journal of Information Display, 2021, v. 22, n. 3, p. 179, doi. 10.1080/15980316.2021.1911866
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- Article
Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer.
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- Journal of Information Display, 2020, v. 21, n. 4, p. 217, doi. 10.1080/15980316.2019.1708820
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- Article
Improvement of the stability and optoelectronic characteristics of molybdenum disulfide thin-film transistors by applying a nitrocellulose passivation layer.
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- Journal of Information Display, 2020, v. 21, n. 2, p. 123, doi. 10.1080/15980316.2019.1710585
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- Article
A metal oxide TFT gate driver with a single negative power source employing a boosting module.
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- Journal of Information Display, 2020, v. 21, n. 1, p. 57, doi. 10.1080/15980316.2019.1689190
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- Article
Orders-of-magnitude enhancement in conductivity tuning in InGaZnO thin-film transistors via SiN<sub>x</sub> passivation and dual-gate modulation.
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- Journal of Information Display, 2019, v. 20, n. 3, p. 161, doi. 10.1080/15980316.2019.1649729
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- Article
Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition.
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- Journal of Information Display, 2019, v. 20, n. 2, p. 73, doi. 10.1080/15980316.2018.1540365
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- Article
Low-temperature activation under 150°C for amorphous IGZO TFTs using voltage bias.
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- Journal of Information Display, 2017, v. 18, n. 3, p. 131, doi. 10.1080/15980316.2017.1322152
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- Article