Works matching DE "SCHOTTKY effect"

Results: 154

Self-Regulation Mechanism for Charged Point Defects in Hybrid Halide Perovskites.

Published in:

Angewandte Chemie, 2015, v. 127, n. 6, p. 1811, doi. 10.1002/ange.201409740

By:

Walsh, Aron;
Scanlon, David O.;
Chen, Shiyou;
Gong, X. G.;
Wei, Su-Huai

Publication type:

Article

Tunable Oxygen Activation for Catalytic Organic Oxidation: Schottky Junction versus Plasmonic Effects.

Published in:

Angewandte Chemie, 2014, v. 126, n. 12, p. 3269, doi. 10.1002/ange.201309660

By:

Long, Ran;
Mao, Keke;
Gong, Ming;
Zhou, Shan;
Hu, Jiahua;
Zhi, Min;
You, Yang;
Bai, Song;
Jiang, Jun;
Zhang, Qun;
Wu, Xiaojun;
Xiong, Yujie

Publication type:

Article

Analysis of electrical properties of graphene–ZnO/n-Si(111) Schottky contact.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 10, p. 9836, doi. 10.1007/s10854-019-01320-1

By:

Li, Yapeng;
Li, Yingfeng;
Zhang, Jianhua;
Zou, Xiangyu;
Meng, Fanying;
Wu, Rui

Publication type:

Article

Non-Ohmic behavior of copper-rich CCTO thin film prepared through magnetron sputtering method.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 10, p. 9266, doi. 10.1007/s10854-019-01255-7

By:

Xiao, Mi;
Meng, Jiao;
Li, Lei

Publication type:

Article

Carbon nitride supported silver nanoparticles: a potential system for non-volatile memory application with high ON–OFF ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8399, doi. 10.1007/s10854-019-01157-8

By:

Perla, Venkata K.;
Ghosh, Sarit K.;
Kumar, Prashant;
Ray, Sekhar C.;
Mallick, Kaushik

Publication type:

Article

Investigation of electrical, magneto-dielectric and transport properties of multiferroic (1 − x) BiFeO3–(x) BaSr0.7Ti0.3O3 solid solutions.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 8, p. 7447, doi. 10.1007/s10854-019-01058-w

By:

Sharma, Subhash;
Cruz, M. P.;
Siqueiros, J. M.;
Raymond-Herrera, O.;
Alvarez, V. E.;
Dwivedi, R. K.

Publication type:

Article

The effect of annealing on electrical properties of graphene/ZnO schottky contact.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12408, doi. 10.1007/s10854-018-9356-x

By:

Li, Yapeng;
Li, Yingfeng;
Zhang, Hui;
Tang, Ling;
Zhang, Qiang

Publication type:

Article

On the band-structure lineup at GaO, GdO, and GaO(GdO) heterostructures and GaO Schottky contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1444, doi. 10.1007/s10854-015-3909-z

By:

Mönch, Winfried

Publication type:

Article

Еlectronic currents in the (+)Bi/BiO/electrolyte system during tensiostatic anodization.

Published in:

Journal of Solid State Electrochemistry, 2013, v. 17, n. 8, p. 2341, doi. 10.1007/s10008-013-2109-0

By:

Girginov, Christian;
Petkova, Sashka

Publication type:

Article

Measurement of the current-voltage characteristics of thermally stabilized silicon photodiodes.

Published in:

Measurement Techniques, 2013, v. 55, n. 12, p. 1364, doi. 10.1007/s11018-013-0135-z

By:

Kovalev, A.;
Liberman, A.;
Mikryukov, A.;
Moskalyuk, S.

Publication type:

Article

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056

By:

Shu, Yu;
Liu, Yongqian;
Cui, Zhou;
Xiong, Rui;
Zhang, Yinggan;
Xu, Chao;
Zheng, Jingying;
Wen, Cuilian;
Wu, Bo;
Sa, Baisheng

Publication type:

Article

Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800373

By:

Ya Lin;
Tao Zeng;
Haiyang Xu;
Zhongqiang Wang;
Xiaoning Zhao;
Weizhen Liu;
Jiangang Ma;
Yichun Liu

Publication type:

Article

High Detectivity from a Lateral Graphene–MoS2 Schottky Photodetector Grown by Chemical Vapor Deposition.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 9, p. 1, doi. 10.1002/aelm.201800069

By:

Deng, Wenjie;
Chen, Yongfeng;
You, Congya;
Liu, Beiyun;
Yang, Yanhan;
Shen, Gaoliang;
Li, Songyu;
Sun, Ling;
Zhang, Yongzhe;
Yan, Hui

Publication type:

Article

A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3‐Based Memory Cell.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 7, p. 1, doi. 10.1002/aelm.201800062

By:

Funck, Carsten;
Marchewka, Astrid;
Bäumer, Christoph;
Schmidt, Peter C.;
Müller, Phillip;
Dittmann, Regina;
Martin, Manfred;
Waser, Rainer;
Menzel, Stephan

Publication type:

Article

Source‐Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600256

By:

Opoku, Charles;
Sporea, Radu A.;
Stolojan, Vlad;
Silva, S. Ravi P.;
Shkunov, Maxim

Publication type:

Article

Optoelectronic Switches: An Optoelectronic Switch Based on Intrinsic Dual Schottky Diodes in Ambipolar MoSe2 Field‐Effect Transistors (Adv. Electron. Mater. 11/2015).

Published in:

Advanced Electronic Materials, 2015, v. 1, n. 11, p. 1, doi. 10.1002/aelm.201500215

By:

Pradhan, Nihar R.;
Lu, Zhengguang;
Rhodes, Daniel;
Smirnov, Dmitry;
Manousakis, Efstratios;
Balicas, Luis

Publication type:

Article

Current–Voltage Characteristic of the Thermal Ion Emission of Na From the NaxAu Surface.

Published in:

Technical Physics Letters, 2023, v. 49, p. S41, doi. 10.1134/S1063785023900327

By:

Knatko, M. V.;
Lapushkin, M. N.

Publication type:

Article

Schottky model for triboelectric temperature dependence.

Published in:

Scientific Reports, 2018, p. 1, doi. 10.1038/s41598-018-23666-y

By:

Olsen, Martin;
Örtegren, Jonas;
Zhang, Renyun;
Reza, Salim;
Andersson, Henrik;
Olin, Håkan

Publication type:

Article

Ni/Ag Schottky contacts on Al 0.11 Ga 0.89 N grown on Si (1 1 1) substrate by plasma-assisted MBE.

Published in:

Composite Interfaces, 2015, v. 22, n. 2, p. 127, doi. 10.1080/15685543.2015.996471

By:

Mohd Yusoff, M.Z.;
Hassan, Z.;
Abu Hassan, H.;
Abdullah, M.J.

Publication type:

Article

A SELF-RECTIFYING BIPOLAR RRAM DEVICE BASED ON /2/n+- STRUCTURE.

Published in:

Modern Physics Letters B, 2014, v. 28, n. 4, p. -1, doi. 10.1142/S0217984914500304

By:

LI, YINGTAO;
JIANG, XINYU;
TAO, CHUNLAN

Publication type:

Article

A NOVEL GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR WITH SCHOTTKY TUNNELING DRAIN AND OHMIC TUNNELING SOURCE.

Published in:

Modern Physics Letters B, 2013, v. 27, n. 26, p. 1350189-1, doi. 10.1142/S0217984913501893

By:

GHOREISHI, SEYED SALEH;
SAGHAFI, KAMYAR;
MORAVVEJ-FARSHI, MOHAMMAD KAZEM

Publication type:

Article

The non-existence of stable Schottky forms.

Published in:

Compositio Mathematica, 2014, v. 150, n. 4, p. 679, doi. 10.1112/S0010437X13007586

By:

Codogni, G.;
Shepherd-Barron, N. I.

Publication type:

Article

Effects of Schottky junction on surface waves in a piezoelectric semiconducting film over a metal substrate.

Published in:

Mathematics & Mechanics of Solids, 2023, v. 28, n. 10, p. 2262, doi. 10.1177/10812865231162309

By:

Xu, Chunyu;
Wei, Peijun;
Wei, Zibo;
Guo, Xiao

Publication type:

Article

The Influence of the Schottky Barrier at the Metal/PbS NCs Junction on the Charge Transport Properties.

Published in:

Optics & Spectroscopy, 2020, v. 128, n. 8, p. 1241, doi. 10.1134/S0030400X20080263

By:

Onishchuk, D. A.;
Parfenov, P. S.;
Dubavik, A.;
Litvin, A. P.

Publication type:

Article

Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate.

Published in:

Photonics, 2021, v. 8, n. 2, p. 28, doi. 10.3390/photonics8020028

By:

Liang, Fangzhou;
Chen, Wen;
Feng, Meixin;
Huang, Yingnan;
Liu, Jianxun;
Sun, Xiujian;
Zhan, Xiaoning;
Sun, Qian;
Wu, Qibao;
Yang, Hui

Publication type:

Article

On-Orbit Performance of Pd/4H-SiC Schottky UV Detectors in a Low-Earth Orbit.

Published in:

Indian Journal of Pure & Applied Physics, 2023, v. 61, n. 2, p. 85, doi. 10.56042/ijpap.v61i2.69770

By:

Bhavana D.;
Sirisha J.;
Sumesh M. A.;
G., Ravi Chandra Babu;
Maji, Amit;
Karanth, S. P.;
Sriram K. V.

Publication type:

Article

The Effectiveness of Ga Percent on the Electrical Characteristics of Al/CuIn1-xGaxSe2/ITO Schottky Junctions.

Published in:

Indian Journal of Pure & Applied Physics, 2022, v. 60, n. 7, p. 582

By:

Hamrouni, S.;
AlKhalifah, Manea S.;
Saad, K. Ben;
El-Bana, M. S.

Publication type:

Article

The Pitting Susceptibility Investigation of Passive Films Formed on X70, X80, and X100 Pipeline Steels by Electrochemical Noise and Mott-Schottky Measurements.

Published in:

International Journal of Corrosion, 2015, v. 2015, p. 1, doi. 10.1155/2015/298584

By:

Zhao, Yang;
Liang, Ping;
Shi, Yanhua;
Zhang, Yunxia;
Yang, Tao

Publication type:

Article

Mechanism and Features of Field Emission in Semiconductors.

Published in:

Semiconductors, 2019, v. 53, n. 3, p. 321, doi. 10.1134/S1063782619030229

By:

Zhukov, N. D.;
Mikhailov, A. I.;
Mosiyash, D. S.

Publication type:

Article

Carrier velocity effect on carbon nanotube Schottky contact.

Published in:

Semiconductors, 2016, v. 50, n. 8, p. 1056, doi. 10.1134/S1063782616080285

By:

Fathi, Amir;
Ahmadi, M.;
Ismail, Razali

Publication type:

Article

On the ohmicity of Schottky contacts.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 761, doi. 10.1134/S106378261606021X

By:

Sachenko, A.;
Belyaev, A.;
Konakova, R.

Publication type:

Article

Isothermal current-voltage characteristics of high-voltage 4 H-SiC junction barrier Schottky rectifiers.

Published in:

Semiconductors, 2016, v. 50, n. 5, p. 656, doi. 10.1134/S1063782616050158

By:

Levinshtein, M.;
Ivanov, P.;
Zhang, Q.;
Palmour, J.

Publication type:

Article

The analysis of leakage current in MIS Au/SiO/ n-GaAs at room temperature.

Published in:

Semiconductors, 2013, v. 47, n. 10, p. 1308, doi. 10.1134/S1063782613100023

By:

Altuntas, H.;
Ozcelik, S.

Publication type:

Article

Electrical Behavior of a Nanoporous Nb2O5/Pt Schottky Contact at Elevated Temperatures.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 611, doi. 10.1007/s11664-018-6755-y

By:

Khairir, Nur Samihah;
Abdul Rani, Rozina;
Ab Kadir, Rosmalini;
Soin, Norhayati;
Abdullah, Wan Fazlida Hanim;
Mamat, Mohamad Hafiz;
Rusop, M.;
Zoolfakar, Ahmad Sabirin

Publication type:

Article

Capacitance and Conductance-Frequency Characteristics of Au/ n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 2, p. 882, doi. 10.1007/s11664-016-4999-y

By:

Yüksel, Ö.;
Kuş, M.;
Yıldırım, M.

Publication type:

Article

Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6305, doi. 10.1007/s11664-016-5030-3

By:

Harotoonian, Vache;
Woodall, Jerry

Publication type:

Article

Electrical Properties and Current Transport Mechanisms of the Au/ n-GaN Schottky Structure with Solution- Processed High- k BaTiO Interlayer.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3499, doi. 10.1007/s11664-014-3177-3

By:

Rajagopal Reddy, V.;
Manjunath, V.;
Janardhanam, V.;
Kil, Yeon-Ho;
Choi, Chel-Jong

Publication type:

Article

Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 5, p. 1384, doi. 10.1007/s11664-014-3083-8

By:

Lee, Jin-Woo;
Kwon, Hyeon-Min;
Kim, Myeong-Ho;
Lee, Seung-Ryul;
Kim, Young-Bae;
Choi, Duck-Kyun

Publication type:

Article

Composite PET Membrane with Nanostructured Ag/AgTCNQ Schottky Junctions: Electrochemical Nanofabrication and Charge-Transfer Properties.

Published in:

Chemistry - A European Journal, 2014, v. 20, n. 3, p. 724, doi. 10.1002/chem.201303391

By:

Huang, Li;
Chen, Yong;
Bian, Shujuan;
Huang, Yi ‐ Fan;
Tian, Zhong ‐ Qun;
Zhan, Dongping

Publication type:

Article

Changes in the Structural Dimensionality of Selenidostannates in Ionic Liquids: Formation, Structures, Stability, and Photoconductivity.

Published in:

Chemistry - A European Journal, 2013, v. 19, n. 27, p. 8806, doi. 10.1002/chem.201300807

By:

Lin, Yumei;
Xie, Dewang;
Massa, Werner;
Mayrhofer, Leonhard;
Lippert, Sina;
Ewers, Benjamin;
Chernikov, Alexey;
Koch, Martin;
Dehnen, Stefanie

Publication type:

Article

Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 19, p. 2794, doi. 10.1002/adfm.201303368

By:

Luo, Lin‐Bao;
Chen, Jing‐Jing;
Wang, Ming‐Zheng;
Hu, Han;
Wu, Chun‐Yan;
Li, Qiang;
Wang, Li;
Huang, Jian‐An;
Liang, Feng‐Xia

Publication type:

Article

Photovoltaic Effect at the Schottky Interface with Organic Single Crystal Rubrene.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 8, p. 1039, doi. 10.1002/adfm.201301891

By:

Karak, Supravat;
Lim, Jung Ah;
Ferdous, Sunzida;
Duzhko, Volodimyr V.;
Briseno, Alejandro L.

Publication type:

Article

Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2 for Metal-Free Schottky Junction Photodetectors.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 6, p. 835, doi. 10.1002/adfm.201301924

By:

Zhang, Zengxing;
Guo, Yunxian;
Wang, Xiaojuan;
Li, Dong;
Wang, Fengli;
Xie, Sishen

Publication type:

Article

A study on electrical properties of Au/4H-SiC Schottky diode under illumination.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20130, doi. 10.1007/s10854-021-06480-7

By:

Yıldız, D. E.;
Karadeniz, S.;
Gullu, H. H.

Publication type:

Article

The composition and poling-dependent photovoltaic studies in ferroelectric (Bi1−xSrx)(Fe1−xTix)O3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 1515, doi. 10.1007/s10854-019-02667-1

By:

Biswas, P. P.;
Thirmal, Ch.;
Pal, S.;
Miryala, M.;
Murakami, M.;
Murugavel, P.

Publication type:

Article

Heterostructure of GeSe2−xSnx/n-Si solar cells: electronic properties and improvement of photoelectrical performance.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 6, p. N.PAG, doi. 10.1007/s00339-019-2674-x

By:

Alharbi, S. R.;
Darwish, A. A. A.

Publication type:

Article

Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 1, p. 1, doi. 10.1007/s00339-018-2360-4

By:

Sarkar, Anirban;
Adhikari, Rajdeep;
Das, Amal Kumar

Publication type:

Article

The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 5, p. 1, doi. 10.1007/s00339-018-1819-7

By:

Omotoso, E.;
Auret, F. D.;
Igumbor, E.;
Tunhuma, S. M.;
Danga, H. T.;
Ngoepe, P. N. M.;
Taleatu, B. A.;
Meyer, W. E.

Publication type:

Article

Metal/InGaN Schottky junction solar cells: an analytical approach.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 4, p. 1459, doi. 10.1007/s00339-014-8910-5

By:

Mahala, Pramila;
Behura, Sanjay;
Dhanavantri, Chenna;
Ray, Abhijit;
Jani, Omkar

Publication type:

Article

Variability of electrical contact properties in multilayer MoS thin-film transistors.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 117, n. 2, p. 761, doi. 10.1007/s00339-014-8785-5

By:

Kim, Seong;
Park, Seonyoung;
Choi, Woong

Publication type:

Article