Works matching DE "ALUMINUM gallium nitride"

Results: 305

Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4802, doi. 10.1007/s11664-024-11190-x

By:

Hairol Aman, Mohammad Amirul;
Ahmad Noorden, Ahmad Fakhrurrazi;
Abdul Kadir, Muhammad Zamzuri;
Danial, Wan Hazman;
Daud, Suzairi

Publication type:

Article

Aluminium and Gallium Silylimides as Nitride Sources**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512

By:

Heilmann, Andreas;
Saddington, Artemis M.;
Goicoechea, Jose M.;
Aldridge, Simon

Publication type:

Article

Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 9321, doi. 10.1007/s10854-018-8962-y

By:

Deng, Gaoqiang;
Zhang, Yuantao;
Yu, Ye;
Yan, Long;
Li, Pengchong;
Han, Xu;
Chen, Liang;
Zhao, Degang;
Du, Guotong

Publication type:

Article

Growth of AlGaN-based multiple quantum wells on SiC substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 9, p. 7756, doi. 10.1007/s10854-018-8772-2

By:

Han, Xu;
Zhang, Yuantao;
Li, Pengchong;
Yan, Long;
Deng, Gaoqiang;
Chen, Liang;
Yu, Ye;
Zhao, Degang;
Yin, Jingzhi

Publication type:

Article

Interfacial and electrical characteristics of tetragonal HfO2/Al2O3 multilayer grown on AlGaN/GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 9, p. 7644, doi. 10.1007/s10854-018-8757-1

By:

Cao, Duo;
Liu, Feng;
Shi, Xi;
Shi, Hui;
Zheng, Li;
Shen, Lingyan;
Cheng, Xinhong;
Yu, Yuehui;
Li, Xiaolong;
Shi, Wangzhou

Publication type:

Article

Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3200, doi. 10.1007/s10854-016-5909-z

By:

Arslan, Engin;
Öztürk, Mustafa;
Tıraş, Engin;
Tıraş, Tülay;
Özçelik, Süleyman;
Özbay, Ekmel

Publication type:

Article

Cesium, oxygen coadsorption on AlGaN(0001) surface: experimental research and ab initio calculations.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2181, doi. 10.1007/s10854-015-2665-4

By:

Yang, Mingzhu;
Chang, Benkang;
Wang, Meishan

Publication type:

Article

Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications.

Published in:

Technical Physics Letters, 2023, v. 49, p. S319, doi. 10.1134/S1063785023010182

By:

Kondratenko, T. T.;
Grashchenko, A. S.;
Osipov, A. V.;
Redkov, A. V.;
Ubyivovk, E. V.;
Sharofidinov, Sh. Sh.;
Kukushkin, S. A.

Publication type:

Article

Enhancing Carriers' Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs.

Published in:

Photonics, 2025, v. 12, n. 1, p. 49, doi. 10.3390/photonics12010049

By:

Bashir, Jamshad;
Usman, Muhammad;
Arteev, Dmitri Sergeevich;
Noor, Zoya;
Ali, Ahmed

Publication type:

Article

Tunable Radiation Patterns on Temperature-Dependent Materials.

Published in:

Photonics, 2024, v. 11, n. 7, p. 646, doi. 10.3390/photonics11070646

By:

Cheng, Lin;
Wu, Fan;
Huang, Kun

Publication type:

Article

Ni/Ag Schottky contacts on Al 0.11 Ga 0.89 N grown on Si (1 1 1) substrate by plasma-assisted MBE.

Published in:

Composite Interfaces, 2015, v. 22, n. 2, p. 127, doi. 10.1080/15685543.2015.996471

By:

Mohd Yusoff, M.Z.;
Hassan, Z.;
Abu Hassan, H.;
Abdullah, M.J.

Publication type:

Article

Stark Resonances Induced by the Exchange-Correlation Potential in Piezoelectric Nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 11, p. n/a, doi. 10.1002/pssr.201700248

By:

Wołoszyn, Maciej;
Spisak, Bartłomiej J.

Publication type:

Article

An Analytical Two-Dimensional C-V Model of AlGaN/GaN MODFET for High Speed Circuit Applications.

Published in:

IUP Journal of Telecommunications, 2013, v. 5, n. 4, p. 49

By:

Ramnish;
Arya, Sandeep K.;
Ahlawat, Anil

Publication type:

Article

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment.

Published in:

Advances in Condensed Matter Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/267680

By:

Yang, Chao;
Xiong, Jiayun;
Wei, Jie;
Wu, Junfeng;
Zhang, Bo;
Luo, Xiaorong

Publication type:

Article

High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/A1N Superlattice Structure.

Published in:

Advances in Condensed Matter Physics, 2014, p. 1, doi. 10.1155/2014/784918

By:

Zhiming Li;
Jinping Li;
Haiying Jiang;
Yanbin Han;
Yingjie Xia;
Yimei Huang;
Jianqin Yin;
Shigang Hu

Publication type:

Article

Free polaron energy levels in AlGaN/AlGaN triangle quantum well structures.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 17, p. -1, doi. 10.1142/S0217984917501871

By:

Pan, Hong Yu;
Zhao, Feng Qi

Publication type:

Article

Influence of A1N spacer on the properties of A1GaN/A1N/GaN heterostructures.

Published in:

Optica Applicata, 2013, v. 43, n. 1, p. 61, doi. 10.5277/oa130108

By:

WOŚKO, MATEUSZ;
PASZKIEWICZ, BOGDAN;
PASZKIEWICZ, REGINA;
TŁACZAŁA, MAREK

Publication type:

Article

Chemical analysis of Ti/A1/Ni/Au ohmic contacts to A1GaN/GaN heterostructures.

Published in:

Optica Applicata, 2013, v. 43, n. 1, p. 67, doi. 10.5277/oa130109

By:

MACHERZYŃSKI, WOJCIECH;
INDYKIEWICZ, KORNELIA;
PASZKIEWICZ, BOGDAN

Publication type:

Article

Measurements of AlGaN/GaN heterostructures for sensor applications.

Published in:

Optica Applicata, 2013, v. 43, n. 1, p. 35, doi. 10.5277/oa130104

By:

HOJKO, MIKOŁAJ RYSZARD;
PASZUK, DOROTA;
PASZKIEWICZ, BOGDAN

Publication type:

Article

Theoretical study of back-illuminated separated absorption and multiplication AlGaN APDs with different structural parameters.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 6, p. 1, doi. 10.1007/s11082-017-1055-y

By:

Wang, Fuxue

Publication type:

Article

Simulation and Analysis of n-Type Electron Blocking Layers in GaN-Based Light-Emitting Diodes.

Published in:

Mathematical Modelling of Engineering Problems, 2024, v. 11, n. 11, p. 2912, doi. 10.18280/mmep.111104

By:

Tani, Wassila Kazi;
Khedim, Siham;
Amara, Sofiane

Publication type:

Article

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films.

Published in:

Optics & Spectroscopy, 2019, v. 127, n. 1, p. 36, doi. 10.1134/S0030400X19070208

By:

Novikova, N. N.;
Yakovlev, V. A.;
Klimin, S. A.;
Malin, T. V.;
Gilinsky, A. M.;
Zhuravlev, K. S.

Publication type:

Article

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-11246-0

By:

Zhang, Qihua;
Parimoo, Heemal;
Martel, Eli;
Zhao, Songrui

Publication type:

Article

Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-04876-x

By:

Khan, M. Ajmal;
Maeda, Noritoshi;
Yun, Joosun;
Jo, Masafumi;
Yamada, Yoichi;
Hirayama, Hideki

Publication type:

Article

Polarized Infrared Reflectance Studies for Wurtzite Al0.06Ga0.94N Epilayer on Sapphire Grown by MBE.

Published in:

International Review of Physics, 2013, v. 7, n. 1, p. 36

By:

Aljameel, A. I.;
Hassan, H. Abu;
Ng, S. S.

Publication type:

Article

MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2107, doi. 10.1134/S1063782618160170

By:

Lutsenko, E. V.;
Rzheutski, M. V.;
Vainilovich, A. G.;
Svitsiankou, I. E.;
Shulenkova, V. A.;
Muravitskaya, E. V.;
Alexeev, A. N.;
Petrov, S. I.;
Yablonskii, G. P.

Publication type:

Article

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlGaN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 221, doi. 10.1134/S1063782618020136

By:

Ratnikov, V.;
Sheglov, M.;
Ber, B.;
Kazantsev, D.;
Osinnykh, I.;
Malin, T.;
Zhuravlev, K.

Publication type:

Article

Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1224, doi. 10.1134/S1063782617090184

By:

Royz, M.;
Baranov, A.;
Imenkov, A.;
Burenina, D.;
Pivovarova, A.;
Monakhov, A.;
Grebenshchikova, E.;
Yakovlev, Yu.

Publication type:

Article

High-voltage MIS-gated GaN transistors.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1229, doi. 10.1134/S106378261709010X

By:

Erofeev, E.;
Fedin, I.;
Fedina, V.;
Stepanenko, M.;
Yuryeva, A.

Publication type:

Article

effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1383, doi. 10.1134/S1063782616100237

By:

Tsatsulnikov, A.;
Lundin, V.;
Zavarin, E.;
Yagovkina, M.;
Sakharov, A.;
Usov, S.;
Zemlyakov, V.;
Egorkin, V.;
Bulashevich, K.;
Karpov, S.;
Ustinov, V.

Publication type:

Article

Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ SiN passivation.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1416, doi. 10.1134/S1063782616100225

By:

Tomosh, K.;
Pavlov, A.;
Pavlov, V.;
Khabibullin, R.;
Arutyunyan, S.;
Maltsev, P.

Publication type:

Article

Increase in the diffusion length of minority carriers in AlGaN alloys ( = 0-0.1) fabricated by ammonia molecular beam epitaxy.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1285, doi. 10.1134/S1063782615100140

By:

Malin, T.;
Gilinsky, A.;
Mansurov, V.;
Protasov, D.;
Kozhuhov, A.;
Yakimov, E.;
Zhuravlev, K.

Publication type:

Article

Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate.

Published in:

Semiconductors, 2014, v. 48, n. 3, p. 387, doi. 10.1134/S1063782614030208

By:

Osipov, K.;
Velikovskiy, L.;
Kagadei, V.

Publication type:

Article

Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 245, doi. 10.1134/S1063782614020262

By:

Solomonov, A.;
Tarasov, S.;
Men'kovich, E.;
Lamkin, I.;
Kurin, S.;
Antipov, A.;
Barash, I.;
Roenkov, A.;
Helava, H.;
Makarov, Yu.

Publication type:

Article

Effect of surface passivation by SiN/SiO of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 1008, doi. 10.1134/S1063782613070087

By:

Gassoumi, Malek;
Mosbahi, Hana;
Zaidi, Mohamed;
Gaquiere, Christophe;
Maaref, Hassen

Publication type:

Article

Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 33, doi. 10.1134/S1063782613010181

By:

Protasov, D.;
Malin, T.;
Tikhonov, A.;
Tsatsulnikov, A.;
Zhuravlev, K.

Publication type:

Article

Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1484, doi. 10.1007/s11664-022-10104-z

By:

Mirabito, Timothy;
Wang, Ke;
Redwing, Joan M.

Publication type:

Article

Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 6, p. 3342, doi. 10.1007/s11664-022-09560-4

By:

Ma, Jinbang;
Zhang, Yachao;
Yao, Yixin;
Zhang, Tao;
Li, Yifan;
Feng, Qian;
Bi, Zhen;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1215, doi. 10.1007/s11664-021-09367-9

By:

Fletcher, A. S. Augustine;
Nirmal, D.;
Arivazhagan, L.;
Ajayan, J.;
Raj, Merlin Gilbert;
Hamza, K. Husna;
Murugapandiyan, P.;
Natarajan, Ramkumar

Publication type:

Article

High Radiative Recombination Rate of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with AlInGaN/AlInN/AlInGaN Tunnel Electron Blocking Layer.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 10, p. 5612, doi. 10.1007/s11664-021-09086-1

By:

Jamil, Tariq;
Usman, Muhammad;
Jamal, Habibullah;
Khan, Sibghatullah;
Rasheed, Saad;
Ali, Shazma

Publication type:

Article

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 5, p. 2630, doi. 10.1007/s11664-021-08778-y

By:

Chu, Jiayan;
Wang, Quan;
Jiang, Lijuan;
Feng, Chun;
Li, Wei;
Liu, Hongxin;
Xiao, Hongling;
Wang, Xiaoliang

Publication type:

Article

Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 9, p. 5581, doi. 10.1007/s11664-019-07421-1

By:

Klein, Brianna A.;
Baca, Albert G.;
Lepkowski, Stephan M.;
Nordquist, Christopher D.;
Wendt, Joel R.;
Allerman, Andrew A.;
Armstrong, Andrew M.;
Douglas, Erica A.;
Abate, Vincent M.;
Kaplar, Robert J.

Publication type:

Article

Efficiency Improvements in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Graded Superlattice Last Quantum Barrier and Without Electron Blocking Layer.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 460, doi. 10.1007/s11664-018-6716-5

By:

Zhang, Xiu;
Sun, Huiqing;
Huang, Jing;
Liu, Tianyi;
Wang, Xin;
Zhang, Yaohua;
Li, Shupeng;
Zhang, Sheng;
Hou, Yufei;
Guo, Zhiyou

Publication type:

Article

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 8, p. 5278, doi. 10.1007/s11664-017-5540-7

By:

All Abbas, J.;
Atmaca, G.;
Narin, P.;
Kutlu, E.;
Sarikavak-Lisesivdin, B.;
Lisesivdin, S.

Publication type:

Article

AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 3888, doi. 10.1007/s11664-016-5091-3

By:

Toropov, A.;
Shevchenko, E.;
Shubina, T.;
Jmerik, V.;
Nechaev, D.;
Evropeytsev, E.;
Kaibyshev, V.;
Pozina, G.;
Rouvimov, S.;
Ivanov, S.

Publication type:

Article

Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4527, doi. 10.1007/s11664-017-5413-0

By:

Huang, Jing;
Guo, Zhiyou;
Guo, Min;
Liu, Yang;
Yao, Shunyu;
Sun, Jie;
Sun, Huiqing

Publication type:

Article

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6346, doi. 10.1007/s11664-016-5029-9

By:

Su, Jie;
Posthuma, Niels;
Wellekens, Dirk;
Saripalli, Yoga;
Decoutere, Stefaan;
Arif, Ronald;
Papasouliotis, George

Publication type:

Article

Al Incorporation at All Growth Stages of AlGaN Epilayers Using SiN Treatment.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 2, p. 872, doi. 10.1007/s11664-015-4240-4

By:

Benzarti, Z.;
Halidou, I.;
Touré, A.;
Jani, B.

Publication type:

Article

Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 12, p. 4706, doi. 10.1007/s11664-015-4132-7

By:

Mickevičius, J.;
Podlipskas, Ž.;
Aleksiejūnas, R.;
Kadys, A.;
Jurkevičius, J.;
Tamulaitis, G.;
Shur, M.;
Shatalov, M.;
Yang, J.;
Gaska, R.

Publication type:

Article

Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3253, doi. 10.1007/s11664-015-3886-2

By:

Zeng, Si-Ming;
Fan, Guang-Han;
Zheng, Shu-Wen

Publication type:

Article