Works matching DE "IMPURITY distribution in semiconductors"

Results: 160

The effect of infrared plasmon on the performance of Si-based THz detectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 839, doi. 10.1007/s10854-016-5598-7

By:

Zhu, He;
Xu, Jintao;
Zhu, Jiaqi;
Wang, Miao;
Wu, Huizhen;
Li, Ning;
Dai, Ning

Publication type:

Article

Effects of Sb substitution on structural and superconducting properties of Bi in BiPbSbSrCaCuO superconductor.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 8, p. 8670, doi. 10.1007/s10854-016-4888-4

By:

Çam, Ebru;
Kocabaş, Kemal

Publication type:

Article

Effects of ZnO additive on crystalline phase and microwave dielectric properties of 0.90AlO-0.10TiO ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2687, doi. 10.1007/s10854-015-4078-9

By:

Lu, Xiaochi;
Huang, Baoyu;
Chen, Tao;
Fu, Zhenxiao;
Wang, Zhefei;
Wang, Lixi;
Zhang, Qitu

Publication type:

Article

A model for the bandgap energy of the dilute nitride GaNSb (0 ≤ x ≤ 0.03).

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 550, doi. 10.1007/s10854-015-3788-3

By:

Zhao, Chuan-Zhen;
Wei, Tong;
Sun, Xiao-Dong;
Wang, Sha-Sha;
Lu, Ke-Qing

Publication type:

Article

Effect of microwave sintering on the microstructure and dielectric properties of 0.92MgAlO-0.08(CaSr)TiO ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 2737, doi. 10.1007/s10854-015-2752-6

By:

Yu, Jun;
Shen, Chunying;
Qiu, Tai

Publication type:

Article

Influence of iron deficiency on electric and magnetic behavior of Ho doped BiFeO electroceramic.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 5, p. 1720, doi. 10.1007/s10854-012-1003-3

By:

Pradhan, S.

Publication type:

Article

Microstructure and mechanical properties of Lead-free Sn–Cu solder composites prepared by rapid directional solidification.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1235, doi. 10.1007/s10854-007-9131-x

By:

Jun Shen;
Yongchang Liu;
Yajing Han;
Houxiu Gao

Publication type:

Article

Liquid-Vapor Equilibria in the SiCl4-A (A = SiCl4-nFn (n = 1-4) Impurity) Systems.

Published in:

Inorganic Materials, 2018, v. 54, n. 8, p. 840, doi. 10.1134/S0020168518080162

By:

Troshin, O. Yu.;
Bulanov, A. D.;
Chernova, O. Yu.

Publication type:

Article

Modeling the ultrapurification of substances by simple distillation.

Published in:

Inorganic Materials, 2017, v. 53, n. 8, p. 853, doi. 10.1134/S0020168517080064

By:

Kirillov, Yu.;
Shaposhnikov, V.;
Churbanov, M.

Publication type:

Article

Ultrapure arsenic and its compounds for optical and semiconductor materials.

Published in:

Inorganic Materials, 2016, v. 52, n. 13, p. 1339, doi. 10.1134/S0020168516130021

By:

Fedorov, V.;
Churbanov, M.

Publication type:

Article

Convection in Melts and Impurity Distribution in Semiconductor Crystals.

Published in:

Crystallography Reports, 2000, v. 45, n. 5, p. 862, doi. 10.1134/1.1312937

By:

Volkov, P. K.;
Zakharov, B. G.;
Serebryakov, Yu. A.

Publication type:

Article

Synthesis and characterization of bulk cobalt-doped ZnO and their thin films.

Published in:

Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 10, p. 3115, doi. 10.1007/s10948-013-2128-1

By:

Karamat, S.;
Rawat, R. S.;
Lee, P.;
Tan, T. L.;
Springham, S. V.;
Ramanujan, R. V.

Publication type:

Article

Spin-Resolved Local Density of States for an Anderson Adatom in a Ferromagnetic Island.

Published in:

Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 6, p. 2197, doi. 10.1007/s10948-012-1428-1

By:

Seridonio, A.;
Souza, O.;
Figueira, M.;
Souza, F.

Publication type:

Article

Neutron Powder Diffraction Study in LaAgMnO.

Published in:

Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 6, p. 1933, doi. 10.1007/s10948-011-1147-z

By:

Samantaray, B.;
Srivastava, S. K.;
Ravi, S.;
Dhiman, I.;
Das, A.

Publication type:

Article

Preparation of Y[YbNd]BaCuO Superconductors Using Nitrate Routes.

Published in:

Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 4, p. 1309, doi. 10.1007/s10948-010-0824-7

By:

Moussa, M. A. A.;
Al-Hosiny, N. M.

Publication type:

Article

Impurity-Related Local Density-of-States Modulation in BiSrCa(CuZn)O Probed by Scanning Tunneling Spectroscopy.

Published in:

Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 1/2, p. 481, doi. 10.1007/s10948-010-0976-5

By:

Machida, Tadashi;
Kato, Takuya;
Nakamura, Hiroshi;
Fujimoto, Masaki;
Mochiku, Takashi;
Ooi, Shuuichi;
Sakata, Hideaki;
Hirata, Kazuto

Publication type:

Article

One Possible Way to Affect the Impurity Influx into the Plasma of a Stellarator with Poloidal Slits in the Vacuum Wall.

Published in:

Plasma Physics Reports, 2001, v. 27, n. 12, p. 1011, doi. 10.1134/1.1426134

By:

Grekov, D. L.

Publication type:

Article

The electric field dependence of a donor impurity in graded GaAs quantum wires.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 7, p. 1053, doi. 10.1007/s00339-003-2161-1

By:

Kasapoglu, E.;
Sari, H.;
Sokmen, I.

Publication type:

Article

On the migration of defects and impurities in microelectromechanical systems subject to a large number of light pulses.

Published in:

Applied Physics A: Materials Science & Processing, 2001, v. 73, n. 4, p. 425, doi. 10.1007/s003390100902

By:

Wautelet, M.;
Dauchot, J.P.;
Hecq, M.

Publication type:

Article

EMC3-EIRENE Simulation of Impurity Transport in Comparison with EUV Emission Measurements in the Stochastic Layer of LHD: Effects of Force Balance and Transport Coefficients.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 628, doi. 10.1002/ctpp.201610036

By:

Dai, S.;
Kobayashi, M.;
Kawamura, G.;
Morita, S.;
Oishi, T.;
Zhang, H. M.;
Huang, X.L.;
Feng, Y.;
Wang, D. Z.;
Suzuki, Y.;
the LHD experiment group

Publication type:

Article

Kinetic Modelling of the Plasma Recombination.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 698, doi. 10.1002/ctpp.201611004

By:

Tskhakaya, D.

Publication type:

Article

Modeling of Small-sized ELMs in Detached Divertor Plasmas.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 742, doi. 10.1002/ctpp.201610055

By:

Pigarov, A. Yu.;
Krasheninnikov, S.I.;
Hollmann, E. M.;
Rognlien, T. D.

Publication type:

Article

Development of the Backflow Model for Simplified Impurity Exhaust in Monte-Carlo Calculation.

Published in:

Contributions to Plasma Physics, 2014, v. 54, n. 4/6, p. 404, doi. 10.1002/ctpp.201410032

By:

Hoshino, K.;
Shimizu, K.;
Kawashima, H.;
Takizuka, T.;
Nakano, T.;
Ide, S.

Publication type:

Article

KLEIN TUNNELING IN THE PRESENCE OF RANDOM IMPURITIES.

Published in:

International Journal of Modern Physics C: Computational Physics & Physical Computation, 2012, v. 23, n. 12, p. 1, doi. 10.1142/S0129183112500805

By:

PALPACELLI, S.;
MENDOZA, M.;
HERRMANN, H. J.;
SUCCI, S.

Publication type:

Article

EFFICIENCY OF GENETIC ALGORITHM AND DETERMINATION OF GROUND STATE ENERGY OF IMPURITY IN A SPHERICAL QUANTUM DOT.

Published in:

International Journal of Modern Physics C: Computational Physics & Physical Computation, 2003, v. 14, n. 6, p. 775, doi. 10.1142/S0129183103004917

By:

Safak, Haluk;
Sahin, Mehmet;
Gülveren, Berna;
Tomak, Mehmet

Publication type:

Article

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 692, doi. 10.1134/S1063782618060192

By:

Poklonski, N. A.;
Vyrko, S. A.;
Dzeraviaha, A. N.

Publication type:

Article

Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119

By:

Galiev, G. B.;
Klimov, E. A.;
Klochkov, A. N.;
Pushkarev, S. S.;
Maltsev, P. P.

Publication type:

Article

Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 290, doi. 10.1134/S1063782617030046

By:

Bannaya, V.

Publication type:

Article

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 299, doi. 10.1134/S1063782616030192

By:

Poklonski, N.;
Vyrko, S.;
Kovalev, A.;
Zabrodskii, A.

Publication type:

Article

Methods for estimating the compensating-impurity concentration in Hg-doped Ge.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1408, doi. 10.1134/S1063782614110062

By:

Bannaya, V.

Publication type:

Article

Features of impurity-photoconductivity relaxation in boron-doped silicon.

Published in:

Semiconductors, 2012, v. 46, n. 11, p. 1387, doi. 10.1134/S1063782612110188

By:

Rumyantsev, V.;
Morozov, S.;
Kudryavtsev, K.;
Gavrilenko, V.;
Kozlov, D.

Publication type:

Article

Evidence of the third ( A) level of the mercury vacancy in CdHgTe.

Published in:

Semiconductors, 2012, v. 46, n. 7, p. 882, doi. 10.1134/S1063782612070093

By:

Gassan-zade, S.;
Strikha, M.;
Shepelskii, G.

Publication type:

Article

Vanadium deep impurity level in diluted magnetic semiconductors PbSnVTe.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 741, doi. 10.1134/S106378261206022X

By:

Skipetrov, E.;
Golovanov, A.;
Knotko, A.;
Slyn'ko, E.;
Slyn'ko, V.

Publication type:

Article

Circular polarization of the photoluminescence from a system of two-dimensional A centers in a magnetic field.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 776, doi. 10.1134/S1063782611060200

By:

Petrov, P.;
Ivánov, Yu.;
Averkiev, N.

Publication type:

Article

Energy of impurity resonance states in lead telluride with different contents of thallium impurity.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 724, doi. 10.1134/S1063782611060169

By:

Nemov, S.;
Ravich, Yu.;
Korchagin, V.

Publication type:

Article

Theoretical investigations of the g factors and the hyperfine structure constants of the Cr and Mn centrs in silicon.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 577, doi. 10.1134/S1063782611050290

By:

Zhang, Zhi-Hong;
Wu, Shao-Yi;
Xu, Pei

Publication type:

Article

Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1476, doi. 10.1134/S1063782610110199

By:

Morozov, S.;
Marem'yanin, K.;
Erofeeva, I.;
Yablonskiy, A.;
Antonov, A.;
Gavrilenko, L.;
Rumyantsev, V.;
Gavrilenko, V.

Publication type:

Article

Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1394, doi. 10.1134/S1063782610110023

By:

Firsov, D.;
Shalygin, V.;
Panevin, V.;
Melentyev, G.;
Sofronov, A.;
Vorobjev, L.;
Andrianov, A.;
Zakhar'in, A.;
Mikhrin, V.;
Vasil'ev, A.;
Zhukov, A.;
Gavrilenko, L.;
Gavrilenko, V.;
Antonov, A.;
Aleshkin, V.

Publication type:

Article

Temperature dependence of inverse population on intracenter transitions of shallow impurity centers in semiconductors.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1457, doi. 10.1134/S1063782610110151

By:

Orlova, E.

Publication type:

Article

Heat-transfer phenomena in alloys.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1275, doi. 10.1134/S1063782610100052

By:

Aliev, S. A.;
Selim-zade, R. I.;
Ragimov, S. S.

Publication type:

Article

Dependence of the electrical parameters of MBE-grown Cd x Hg1 − x Te films on the level of doping with indium.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031

By:

Varavin, V. S.;
Dvoretskiĭ, S. A.;
Ikusov, D. G.;
Mikhaĭlov, N. N.;
Sidorov, Yu. G.;
Sidorov, G. Yu.;
Yakushev, M. V.

Publication type:

Article

Out-diffusion of impurity via the kick-out mechanism during gettering.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1048, doi. 10.1134/S1063782607090084

By:

Aleksandrov, O. V.;
Krivoruchko, A. A.

Publication type:

Article

The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 125, doi. 10.1134/S1063782606020011

By:

Bolotov, V. V.;
Kamaev, G. N.;
Noskov, A. V.;
Chernyaev, S. A.;
Roslikov, V. E.

Publication type:

Article

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 131, doi. 10.1134/S1063782606020035

By:

Romaka, V. A.;
Stadnyk, Yu. V.;
Shelyapina, M. G.;
Fruchart, D.;
Chekurin, V. F.;
Romaka, L. P.;
Gorelenko, Yu. K.

Publication type:

Article

Mössbauer Study of the Ge Two-Electron Donor Centers in PbSe.

Published in:

Semiconductors, 2005, v. 39, n. 12, p. 1369, doi. 10.1134/1.2140305

By:

Terukov, E. I.;
Khuzhakulov, É. S.

Publication type:

Article

Simulation of the Capacitance–Voltage Characteristics of a Ferroelectric Material.

Published in:

Semiconductors, 2005, v. 39, n. 12, p. 1387, doi. 10.1134/1.2140309

By:

Berman, L. S.

Publication type:

Article

Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 182, doi. 10.1134/1.1864195

By:

Pokrovski&itlde;, Ya. E.;
Khval'kovskiĨ, N. A.

Publication type:

Article

Scattering of Electrons at Impurity Ions at Low Temperatures in a Superlattice with Doped Quantum Wells.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1093, doi. 10.1134/1.1610126

By:

Borisenko, S.I.

Publication type:

Article

Study of Zinc Impurity Atoms in GaP, GaAs, and GaSb [sup 67]Ga([sup 67]Zn) and [sup 67]Cu([sup 67]Zn) by Emission Mössbauer Spectroscopy.

Published in:

Semiconductors, 2002, v. 36, n. 9, p. 975, doi. 10.1134/1.1507275

By:

Seregin, N. P.;
Nemov, S. A.;
Irkaev, S. M.

Publication type:

Article

Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure and Lattice Relaxation Effects.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 751, doi. 10.1134/1.1493743

By:

Medvedeva, N. I.;
Yuryeva, É. I.;
Ivanovskiı, A. L.

Publication type:

Article