Works matching DE "HYDROGENATED amorphous silicon"

Results: 184

Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3946, doi. 10.1007/s11664-024-11166-x

By:

Valencia-Grisales, D. F.;
Reyes-Betanzo, C.

Publication type:

Article

Effect of deposition temperature of a-Si:H layer on the performance of silicon heterojunction solar cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13330, doi. 10.1007/s10854-019-01700-7

By:

Ruan, Tianyu;
Qu, Minghao;
Wang, Jianqiang;
He, Yongcai;
Xu, Xixiang;
Yu, Cao;
Zhang, Yongzhe;
Yan, Hui

Publication type:

Article

Bismuth induced crystallization of hydrogenated amorphous silicon thin films: effect of annealing time.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 7110, doi. 10.1007/s10854-019-01028-2

By:

Zouini, Meriem;
Khamlich, Saleh;
Dimassi, Wissem

Publication type:

Article

Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon ( nc-Si:H) thin films deposited by PE-CVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12365, doi. 10.1007/s10854-016-5024-1

By:

Jadhavar, Ashok;
Pawbake, Amit;
Waykar, Ravindra;
Waman, Vaishali;
Rondiya, Sachin;
Shinde, Omkar;
Kulkarni, Rupali;
Rokade, Avinash;
Bhorde, Ajinkya;
Funde, Adinath;
Patil, Dinkar;
Pathan, Habib;
Jadkar, Sandesh

Publication type:

Article

Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4888, doi. 10.1007/s10854-015-2998-z

By:

Huang, Junjun;
Wang, Weiyan;
Fang, Xuyang;
Huang, Jinhua;
Tan, Ruiqin;
Song, Weijie

Publication type:

Article

Grating Coupler Design for Low-Cost Fabrication in Amorphous Silicon Photonic Integrated Circuits.

Published in:

Photonics, 2024, v. 11, n. 9, p. 783, doi. 10.3390/photonics11090783

By:

Almeida, Daniel;
Lourenço, Paulo;
Fantoni, Alessandro;
Costa, João;
Vieira, Manuela

Publication type:

Article

P-12: A-Si:H TFT Gate Driver with Shared Dual Pull-Down Units for Large-Sized TFT-LCD Applications.

Published in:

SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 986, doi. 10.1002/j.2168-0159.2014.tb00256.x

By:

Hu, Zhijin;
Liao, Congwei;
Li, Junmei;
Li, Wenjie;
Zhang, Shengdong;
Zeng, Limei;
Lee, Chang‐Yeh;
Lai, Tzu‐Chieh;
Lo, Chang‐Cheng;
Lien, A.

Publication type:

Article

17.3: First-Principles Study on Secondary Electron Emission of MgO (200) and (111) Surfaces.

Published in:

SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 212, doi. 10.1002/j.2168-0159.2014.tb00058.x

By:

Dai, Kai;
Tu, Yan;
Yang, Lanlan;
Li, Qiaofen;
Tolner, Harm

Publication type:

Article

25.3: Pixel Circuit with Bootstrapping Structure for Blue-Phase Liquid Crystal Display.

Published in:

2013

By:

Lin, Chih-Lung;
Cheng, Mao-Hsun;
Tu, Chun-Da;
Hung, Chia-Che;
Lai, Po-Chun;
Yan, Jin;
Chen, Yuan;
Wu, Shin-Tson

Publication type:

Other

P.6: An Integrated a-Si:H Gate Driver Circuit Design for Large-sized TFT- LCD Applications.

Published in:

2013

By:

Lin, Chih-Lung;
Cheng, Mao-Hsun;
Wu, Chia-En;
Tu, Chun-Da

Publication type:

Other

Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 828, doi. 10.1002/pssr.201600303

By:

Gerke, Sebastian;
Becker, Hans ‐ Werner;
Rogalla, Detlef;
Job, Reinhart;
TerheidEN, Barbara

Publication type:

Article

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 3, p. 231, doi. 10.1002/pssr.201308253

By:

Zhang, Xinyu;
Hargreaves, Stuart;
Wan, Yimao;
Cuevas, Andres

Publication type:

Article

Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure.

Published in:

Journal of Nanotechnology, 2011, p. 1, doi. 10.1155/2011/242398

By:

Waman, V. S.;
Funde, A. M.;
Kamble, M. M.;
Pramod, M. R.;
Hawaldar, R. R.;
Amalnerkar, D. P.;
Sathe, V. G.;
Gosavi, S. W.;
Jadkar, S. R.

Publication type:

Article

Temperature dependence of conduction and low frequency noise characteristics in hydrogenated amorphous silicon thin film transistors.

Published in:

Modern Physics Letters B, 2019, v. 33, n. 2, p. N.PAG, doi. 10.1142/S021798491950009X

By:

Zhong, Kai;
Liu, Yuan;
Cai, Shu-Ting;
Xiong, Xiao-Ming

Publication type:

Article

Effect of gradually increasing germane flow rate during the deposition on the performance of a-SiGe:H solar cell.

Published in:

Modern Physics Letters B, 2014, v. 28, n. 22, p. 1450180-1, doi. 10.1142/S0217984914501802

By:

Tae-Yong Lee;
Ho-Joon Jung;
Won-Ho Son;
Young-Soo Sohn;
Sie-Young Choi

Publication type:

Article

Hydrogenated amorphous silicon thin film solar cell with buffer layer of DNA-CTMA biopolymer.

Published in:

Modern Physics Letters B, 2014, v. 28, n. 13, p. 1450107-1, doi. 10.1142/S0217984914501073

By:

Won-Ho Son;
Pratap Reddy, M. Siva;
Sie-Young Choi

Publication type:

Article

Numerical simulation and optimization of a-Si:H/a-SiGe:H/µc-Si:H triple junction thin film silicon solar cell designs for high conversion efficiency.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 11, p. 1, doi. 10.1007/s11082-021-03259-2

By:

Kateb, M. N.;
Tobbeche, S.

Publication type:

Article

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma.

Published in:

High Energy Chemistry, 2024, v. 58, n. 6, p. 693, doi. 10.1134/S0018143924700565

By:

Chagin, M. N.;
Ermakova, E. N.;
Shayapov, V. R.;
Sulyaeva, V. S.;
Maksimovskii, E. A.;
Yushina, I. V.;
Kosinova, M. L.

Publication type:

Article

An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications.

Published in:

Journal of Microwaves, Optoelectronics & Electromagnetic Applications, 2019, v. 18, n. 1, p. 43, doi. 10.1590/2179-10742019v18i11464

By:

Belkacemi, Siham;
Hafdi, Zoubeida

Publication type:

Article

Lead‐Free Perovskite‐Inspired Absorbers for Indoor Photovoltaics.

Published in:

Advanced Energy Materials, 2021, v. 11, n. 1, p. 1, doi. 10.1002/aenm.202002761

By:

Peng, Yueheng;
Huq, Tahmida N.;
Mei, Jianjun;
Portilla, Luis;
Jagt, Robert A.;
Occhipinti, Luigi G.;
MacManus‐Driscoll, Judith L.;
Hoye, Robert L. Z.;
Pecunia, Vincenzo

Publication type:

Article

Lead‐Free Perovskite‐Inspired Absorbers for Indoor Photovoltaics.

Published in:

Advanced Energy Materials, 2021, v. 11, n. 1, p. 1, doi. 10.1002/aenm.202002761

By:

Peng, Yueheng;
Huq, Tahmida N.;
Mei, Jianjun;
Portilla, Luis;
Jagt, Robert A.;
Occhipinti, Luigi G.;
MacManus‐Driscoll, Judith L.;
Hoye, Robert L. Z.;
Pecunia, Vincenzo

Publication type:

Article

Analysis and Optimization of the Performance of Hydrogenated Amorphous Silicon Solar Cell.

Published in:

Journal of New Materials for Electrochemical Systems, 2021, v. 24, n. 3, p. 151, doi. 10.14447/jnmes.v24i3.a02

By:

Leila, Ayat;
Afek, Meftah;
Ahmed, Idda;
Halima, Zebri

Publication type:

Article

Comparison of the Effects of Environmental Treatments on Hydrogen Concentration and Energy Gap Variations of Hydrogenated Amorphous and Polymorphous Silicon Films Prepared by PECVD Technique.

Published in:

Semiconductors, 2020, v. 54, n. 1, p. 91, doi. 10.1134/S1063782620010121

By:

Keramatzadeh, Alireza;
Kosarian, Abdolnabi;
Kaabi, Hooman

Publication type:

Article

On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO:H (0 < x < 2) with time-modulated dc magnetron plasma.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 530, doi. 10.1134/S1063782616040230

By:

Undalov, Yu.;
Terukov, E.;
Gusev, O.;
Trapeznikova, I.

Publication type:

Article

On a combined approach to studying the correlation parameters of self-organizing structures.

Published in:

Semiconductors, 2016, v. 50, n. 1, p. 22, doi. 10.1134/S1063782616010048

By:

Alpatov, A.;
Vikhrov, S.;
Vishnyakov, N.;
Mursalov, S.;
Rybin, N.;
Rybina, N.

Publication type:

Article

Whispering gallery modes in a spherical microcavity with a photoluminescent shell.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1369, doi. 10.1134/S1063782615100085

By:

Grudinkin, S.;
Dontsov, A.;
Feoktistov, N.;
Baranov, M.;
Bogdanov, K.;
Averkiev, N.;
Golubev, V.

Publication type:

Article

Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO:H (0 < x < 2).

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 867, doi. 10.1134/S1063782615070222

By:

Undalov, Yu.;
Terukov, E.

Publication type:

Article

Planar light-emitting microcavities based on hydrogenated amorphous silicon carbide.

Published in:

Semiconductors, 2014, v. 48, n. 10, p. 1374, doi. 10.1134/S1063782614100194

By:

Medvedev, A.;
Feoktistov, N.;
Grudinkin, S.;
Dukin, A.;
Golubev, V.

Publication type:

Article

Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 235, doi. 10.1134/S1063782614020043

By:

Belolipetskiy, A.;
Gusev, O.;
Dmitriev, A.;
Terukov, E.;
Yassievich, I.

Publication type:

Article

Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy.

Published in:

Semiconductors, 2013, v. 47, n. 10, p. 1358, doi. 10.1134/S1063782613100242

By:

Sevastyanov, M.;
Lobkov, V.;
Shmelev, A.;
Leontev, A.;
Matuhin, V.;
Bobyl, A.;
Terukov, E.;
Kukin, A.

Publication type:

Article

Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 749, doi. 10.1134/S1063782612060097

By:

Emelyanov, A.;
Kazanskii, A.;
Kashkarov, P.;
Konkov, O.;
Terukov, E.;
Forsh, P.;
Khenkin, M.;
Kukin, A.;
Beresna, M.;
Kazansky, P.

Publication type:

Article

Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO:H 〈Er,O〉, by dc-magnetron deposition.

Published in:

Semiconductors, 2011, v. 45, n. 12, p. 1604, doi. 10.1134/S1063782611120141

By:

Undalov, Yu.;
Terukov, E.;
Gusev, O.;
Lebedev, V.;
Trapeznikova, I.

Publication type:

Article

Thermal excitation of carriers at tail states and recombination rate in hydrogenated amorphous silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2025, v. 36, n. 1, p. 1, doi. 10.1007/s10854-024-14062-6

By:

Ogihara, Chisato

Publication type:

Article

Simulation and fabrication of a-Si:H thin-film solar cells: a comparative study of simulation and experimental results.

Published in:

Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 7, p. 1, doi. 10.1007/s10854-024-12149-8

By:

Gangwar, Manvendra Singh;
Agarwal, Pratima

Publication type:

Article

Functions of oxygen atoms in hydrogenated amorphous silicon oxide layers for rear-emitter silicon heterojunction solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 1, p. 416, doi. 10.1007/s10854-021-07315-1

By:

Jiang, Kai;
Liu, Wenzhu;
Yang, Yuhao;
Yan, Zhu;
Huang, Shenglei;
Li, Zhenfei;
Li, Xiaodong;
Zhang, Liping;
Liu, Zhengxin

Publication type:

Article

Performance of heterojunction solar cells with different intrinsic a-Si:H thin layers deposited by RF- and VHF-PECVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25327, doi. 10.1007/s10854-021-06991-3

By:

Wang, Jianqiang;
Ru, Xiaoning;
Ruan, Tianyu;
Hu, Yunfei;
Zhang, Yongzhe;
Yan, Hui

Publication type:

Article

Design and optimization of 26.3% efficient perovskite/FeSi2 monolithic tandem solar cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 18, p. 15218, doi. 10.1007/s10854-020-04086-z

By:

Pathania, Anisha;
Pandey, Rahul;
Madan, Jaya;
Sharma, Rajnish

Publication type:

Article

Hydrogen-rich c-Si interfacial modification to obtain efficient passivation for silicon heterojunction solar cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 17, p. 14608, doi. 10.1007/s10854-020-04023-0

By:

You, Jiachuan;
Liu, Huan;
Qu, Minghao;
Yu, Cao;
Zhao, Lei;
Xu, Xixiang;
Wang, Wenjing

Publication type:

Article

Substrate-free flexible thin film solar cells by graphene-mediated peel-off technology.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10279, doi. 10.1007/s10854-020-03574-6

By:

Li, Jingye;
Zhang, Chi;
Li, Dongdong;
Qiao, Lu;
Long, Run;
Yang, Liyou;
Fang, Xiaohong;
Lin, Yinyue;
Chen, Yigang;
Yin, Min

Publication type:

Article

Role of hydrogen in modifying a-Si:H/c-Si interface passivation and band alignment for rear-emitter silicon heterojunction solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9468, doi. 10.1007/s10854-020-03486-5

By:

Wu, Zhuopeng;
Zhang, Liping;
Liu, Wenzhu;
Chen, Renfang;
Li, Zhenfei;
Meng, Fanying;
Liu, Zhengxin

Publication type:

Article

Femtosecond laser-induced simultaneous surface texturing and crystallization of a-Si:H thin film: morphology study.

Published in:

International Journal of Advanced Manufacturing Technology, 2013, v. 65, n. 9-12, p. 1691, doi. 10.1007/s00170-012-4291-0

By:

Wang, Hongliang;
Kongsuwan, Panjawat;
Satoh, Gen;
Yao, Y.

Publication type:

Article

Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation.

Published in:

Technical Physics, 2017, v. 62, n. 6, p. 925, doi. 10.1134/S1063784217060020

By:

Amasev, D.;
Khenkin, M.;
Drevinskas, R.;
Kazansky, P.;
Kazanskii, A.

Publication type:

Article

Determination of Salmonella Typhimurium by Fourier Transform Infrared (FTIR) Spectroscopy Using a Hydrogenated Amorphous Silicon Carbide (a-SiC:H) Thin Film.

Published in:

Analytical Letters, 2021, v. 54, n. 16, p. 2655, doi. 10.1080/00032719.2021.1881107

By:

Gómez-Montaño, Francisco Javier;
Orduña-Díaz, Abdú;
Avelino-Flores, María del Carmen Guadalupe;
Avelino-Flores, Fabiola;
Reyes-Betanzo, Claudia;
Rojas-López, Marlon

Publication type:

Article

Reactive molecular dynamic simulations of hydrogenation process of amorphous silicon nitride.

Published in:

International Journal of Computational Materials Science & Engineering, 2022, v. 11, n. 4, p. 1, doi. 10.1142/S2047684122500087

By:

Pamungkas, Mauludi Ariesto;
Widyaningrum, Anisa;
Istiroyah

Publication type:

Article

Hydrogen Role on the Properties of Silicon Nitride for Flexible Thin Film Encapsulation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 10, p. 1, doi. 10.1002/pssa.202300815

By:

Wu, Majiaqi;
Yang, Xiaoni;
Zhang, Chi;
Jian, Maoliang;
Yang, Lianqiao

Publication type:

Article

Secondary Ion Mass Spectrometry Study of Hydrogenated Amorphous Silicon Layer Disintegration upon Rapid (Laser) Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 12, p. 1, doi. 10.1002/pssa.202200671

By:

Beyer, Wolfhard;
Nuys, Maurice;
Andrä, Gudrun;
Bosan, Hassan Ali;
Breuer, Uwe;
Finger, Friedhelm;
Gawlik, Annett;
Haas, Stefan;
Lambertz, Andreas;
Nickel, Norbert;
Plentz, Jonathan

Publication type:

Article

Titanium‐Oxide‐Based Electron‐Selective Contact for Ultrathin Germanium Quantum Well Solar Cell.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 21, p. 1, doi. 10.1002/pssa.202200292

By:

Osterthun, Norbert;
Meddeb, Hosni;
Berends, Dennis;
Neugebohrn, Nils;
Gehrke, Kai;
Vehse, Martin;
Agert, Carsten

Publication type:

Article

Investigation of Thermal Stability Effects of Thick Hydrogenated Amorphous Silicon Precursor Layers for Liquid‐Phase Crystallized Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 9, p. 1, doi. 10.1002/pssa.202000435

By:

Bosan, Hassan Ali;
Beyer, Wolfhard;
Breuer, Uwe;
Finger, Friedhelm;
Hambach, Nelli;
Nuys, Maurice;
Pennartz, Frank;
Amkreutz, Daniel;
Haas, Stefan

Publication type:

Article

Recent Advances in Diamond Science and Technology.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 21, p. N.PAG, doi. 10.1002/pssa.201900834
Publication type:: Article

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 21, p. N.PAG, doi. 10.1002/pssa.201900241

By:

Remes, Zdenek;
Stuchlik, Jiri;
Stuchlikova, Ha The;
Dragounova, Katerina;
Ashcheulov, Petr;
Taylor, Andrew;
Mortet, Vincent;
Poruba, Ales

Publication type:

Article