Works matching DE "FERROELECTRIC capacitors"

Results: 138

Ferroelectric polarization tuning the photovoltaic and diode-like effect of the Ni, Sm co-doped BiFeO3 film capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12163, doi. 10.1007/s10854-019-01574-9

By:

Yang, Tiantian;
Wei, Jie;
Lv, Zhibin;
Xu, Zhuo;
Cheng, Zhenxiang

Publication type:

Article

Effect of Ba:Ti on ferroelectric properties of LiF doped BaTiO3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 6556, doi. 10.1007/s10854-019-00962-5

By:

Lou, Qiwei;
Zeng, Jiangtao;
Man, Zhenyong;
Zheng, Liaoying;
Park, Chulhong;
Li, Guorong

Publication type:

Article

Enhanced electrical and fatigue properties of La-modified (100)-oriented PZT thin films with various Zr/Ti ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 4, p. 3585, doi. 10.1007/s10854-018-00636-8

By:

Wang, Xing;
Zhou, Jiangang;
Qi, Liping;
Chen, Da;
Wang, Qiusen;
Dou, Jiao;
Wang, Fuan;
Zou, Helin

Publication type:

Article

Dielectric, tunability, leakage current, and ferroelectric properties of (K0.45Na0.55)0.95Li0.05NbO3 lead free piezoelectric.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2659, doi. 10.1007/s10854-018-0542-7

By:

Mahmoud, Abd El-razek;
Afify, Ahmed S.;
Parashar, S. K. S.

Publication type:

Article

Ferroelectric properties of Ag doped PbZr0.53Ti0.47O3 thin film deposited by sol-gel process.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2592, doi. 10.1007/s10854-018-0534-7

By:

Wang, Jinxin;
Jiang, Guicheng;
Huang, Weicheng;
Chang, Yunfei;
Liu, Danqing;
Yang, Bin;
Cao, Wenwu

Publication type:

Article

Defect-relevant piezoelectric and ferroelectric properties in LiCuTa3O9-doped K0.5Na0.5NbO3 lead-free piezoceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2563, doi. 10.1007/s10854-018-0531-x

By:

Wang, Dongmei;
Liao, You;
Peng, Zhengxin;
Zheng, Qiaoji;
Wei, Xianhua;
Wang, Tao;
Lin, Dunmin

Publication type:

Article

Domain configuration evolution, dielectric, ferroelectric and piezoelectric properties of 0.32PIN-0.345PMN-0.335PT single crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 17, p. 12929, doi. 10.1007/s10854-017-7123-z

By:

Zhu, Rongfeng;
Zhang, Qihui;
Fang, Bijun;
Ding, Jianning;
Zhao, Xiangyong;
Tang, Yanxue;
Luo, Haosu

Publication type:

Article

Improved fatigue property of hafnium substitute lead zirconate titanate deposited by pulse laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1819, doi. 10.1007/s10854-016-5731-7

By:

Wu, Zhipeng;
Zhu, Jun;
Liu, Xingpeng

Publication type:

Article

Dielectric relaxation and impedance analysis of ferroelectric double perovskite PbBiNbO.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1824, doi. 10.1007/s10854-016-5732-6

By:

Parida, B.;
Panda, Niranjan;
Padhee, R.;
Das, Piyush;
Choudhary, R.

Publication type:

Article

Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200737

By:

Bai, Na;
Xue, Kan‐Hao;
Huang, Jinhai;
Yuan, Jun‐Hui;
Wang, Wenlin;
Mao, Ge‐Qi;
Zou, Lanqing;
Yang, Shengxin;
Lu, Hong;
Sun, Huajun;
Miao, Xiangshui

Publication type:

Article

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310

By:

Lee, Yong Bin;
Kim, Beom Yong;
Park, Hyeon Woo;
Lee, Suk Hyun;
Oh, Minsik;
Ryoo, Seung Kyu;
Lee, In Soo;
Byun, Seungyong;
Shim, Doosup;
Lee, Jae Hoon;
Kim, Hani;
Kim, Kyung Do;
Park, Min Hyuk;
Hwang, Cheol Seong

Publication type:

Article

Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000778

By:

Jin, Wei;
Xu, Mingsheng;
Zhou, Xiaojie;
Wang, Jiao;
Cai, Yichen;
Jawad, Husnain;
Yan, Mengge;
Tian, Bobo;
Nie, Qingmiao;
Yan, Bo;
Cong, Chunxiao;
Qiu, Zhi‐Jun;
Liu, Ran;
Hu, Laigui

Publication type:

Article

Wake‐Up Effect in HfO2‐Based Ferroelectric Films.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000728

By:

Jiang, Pengfei;
Luo, Qing;
Xu, Xiaoxin;
Gong, Tiancheng;
Yuan, Peng;
Wang, Yuan;
Gao, Zhaomeng;
Wei, Wei;
Tai, Lu;
Lv, Hangbing

Publication type:

Article

Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900698

By:

Sun, Zixiong;
Wang, Zhuo;
Tian, Ye;
Wang, Ge;
Wang, Wen;
Yang, Mengdie;
Wang, Xiaoying;
Zhang, Fanghui;
Pu, Yongping

Publication type:

Article

Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr0.52Ti0.48O3 Ferroelectric Film for Nonvolatile Memory.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900443

By:

Yang, Changhong;
Han, Yajie;
Qian, Jin;
Cheng, Zhenxiang

Publication type:

Article

Synergetic Electronic and Ionic Contributions to Electroresistance in Ferroelectric Capacitors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 3, p. N.PAG, doi. 10.1002/aelm.201800646

By:

Qian, Mengdi;
Fina, Ignasi;
Sulzbach, Milena Cervo;
Sánchez, Florencio;
Fontcuberta, Josep

Publication type:

Article

Ferroelectric capacitive memories: devices, arrays, and applications.

Published in:

Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-024-00463-0

By:

Zhou, Zuopu;
Jiao, Leming;
Zheng, Zijie;
Chen, Yue;
Han, Kaizhen;
Kang, Yuye;
Zhang, Dong;
Wang, Xiaolin;
Kong, Qiwen;
Sun, Chen;
Xie, Jiawei;
Gong, Xiao

Publication type:

Article

67.4L: Late-News Paper: Electrically Suppressed Helix Ferroelectric Liquid Crystals a better Alternative for the IPS Displays.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1001, doi. 10.1002/sdtp.10324

By:

Srivastava, Abhishek K.;
Tseng, Man‐Chun;
Chigrinov, Vladimir. G.;
Kwok, Hoi‐Sing

Publication type:

Article

Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 12, p. N.PAG, doi. 10.1002/pssr.201900414

By:

Liu, Chien;
Tung, Yi-Chun;
Wu, Tian-Li;
Cheng, Chun-Hu;
Tseng, Chih-Yang;
Chen, Hsuan-Han;
Chen, Hsi-Han;
Ma, Jun;
Lin, Chien-Liang;
Zheng, Zhi-Wei;
Chou, Wu-Ching;
Hsu, Hsiao-Hsuan

Publication type:

Article

Separation of the Metallic and Dielectric Losses of Tunable Ferroelectric Capacitors under Control dc Voltage.

Published in:

Progress in Electromagnetics Research Letters, 2018, v. 73, p. 127, doi. 10.2528/pierl17111704

By:

Kotelnikov, I. V.;
Osadchy, V. N.;
Platonov, R. A.;
Altynnikov, A. G.;
Medvedeva, V. V.;
Mikhailov, A. K.;
Gagarin, A. G.;
Tumarkin, A. V.;
Kozyrev, A. B.

Publication type:

Article

外延 Ba0.6 Sr0.4TiO3 铁电薄膜的制备及介电储能性能.

Published in:

Journal of South China Normal University (Natural Science Edition) / Huanan Shifan Daxue Xuebao (Ziran Kexue Ban), 2024, v. 56, n. 4, p. 54, doi. 10.6054/j.jscnun.2024050

By:

冀思雨;
樊晓雨;
曹以琳;
高珺怡;
杨帆;
宋建民;
张宪贵1.

Publication type:

Article

NaNbO3‐(Bi0.5Li0.5)TiO3 Lead‐Free Relaxor Ferroelectric Capacitors with Superior Energy‐Storage Performances via Multiple Synergistic Design.

Published in:

Advanced Energy Materials, 2021, v. 11, n. 28, p. 1, doi. 10.1002/aenm.202101378

By:

Xie, Aiwen;
Zuo, Ruzhong;
Qiao, Zhenliang;
Fu, Zhengqian;
Hu, Tengfei;
Fei, Linfeng

Publication type:

Article

Conditions of steady switching in phase-transition memory cells.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 498, doi. 10.1134/S1063782615040181

By:

Popov, A.;
Salnikov, S.;
Anufriev, Yu.

Publication type:

Article

Performance Analysis of a Charge Plasma Junctionless Nanotube Tunnel FET Including the Negative Capacitance Effect.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 4, p. 2349, doi. 10.1007/s11664-020-07969-3

By:

Shreya, Shruti;
Kumar, Naveen;
Anand, Sunny;
Amin, Intekhab

Publication type:

Article

Enhanced Energy‐Storage Density and Resistive Switching Behavior in Lead‐Free Ba0.7Sr0.3TiO3/Ba0.6Sr0.4TiO3 Multilayer Thin Films.

Published in:

Advanced Engineering Materials, 2025, v. 27, n. 7, p. 1, doi. 10.1002/adem.202402610

By:

Chandrasekaran, Kaushiga;
Jawahar, Kesavan;
Reddy, Salla Gangi;
Annapureddy, Venkateswarlu

Publication type:

Article

Highly transparent PZT capacitors on glass obtained by layer transfer process.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 36, p. 26825, doi. 10.1007/s10854-022-09347-7

By:

Le Rhun, Gwenael;
Pavageau, Franklin;
Wagué, Baba;
Perreau, Pierre;
Licitra, Christophe;
Frey, Laurent;
Dieppedale, Christel

Publication type:

Article

Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 30, p. 23341, doi. 10.1007/s10854-022-09096-7

By:

Li, Yue;
Feng, Tianyang;
Sun, Tangyou;
Chen, Yonghe;
Zhang, Fabi;
Fu, Tao;
Wangyang, Peihua;
Li, Haiou;
Liu, Xingpeng

Publication type:

Article

Lanthanum-doped BiFeO3/ZrO2 gate stack for ferroelectric field effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16189, doi. 10.1007/s10854-020-04073-4

By:

Singh, Amit;
Singh, Sanjai

Publication type:

Article

SCI铁电负电容晶体管亚阈值特性研究.

Published in:

Piezoelectrics & Acoustooptics, 2019, v. 41, n. 5, p. 756, doi. 10.11977/j.issn.1004-2474.2019.05.031

By:

王步冉;
李珍;
谭欣;
翟亚红

Publication type:

Article

Thermostable ferroelectric capacitors based on graded films of barium strontium titanate.

Published in:

Technical Physics, 2017, v. 62, n. 10, p. 1592, doi. 10.1134/S1063784217100231

By:

Tumarkin, A.;
Razumov, S.;
Volpyas, V.;
Gagarin, A.;
Odinets, A.;
Zlygostov, M.;
Sapego, E.

Publication type:

Article

Superior energy storage efficiency through tailoring relaxor behavior and band energy gap in KNN-based ferroelectric ceramic capacitors.

Published in:

Journal of Advanced Dielectrics, 2023, v. 13, n. 1, p. 1, doi. 10.1142/S2010135X22420012

By:

Hou, Limin;
Li, Changxiao;
Wang, Xinjian;
Wang, Xiaozhi;
Wang, Ting;
Huan, Yu

Publication type:

Article

Impact of the Crystal Structure of Interlayer on the Properties of Zr‐Doped Hafnia‐Based Ferroelectric Capacitor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300778

By:

Park, Inseon;
Choi, Yejoo;
Shin, Changhwan

Publication type:

Article

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf0.5Zr0.5O2 Thin Films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 22, p. 1, doi. 10.1002/pssa.202000281

By:

Mehmood, Furqan;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Structural modifications and enhanced ferroelectric nature of NdFeO3–PbTiO3 composites.

Published in:

Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 6, p. 1, doi. 10.1007/s00339-021-04562-1

By:

Somvanshi, Anand;
Ahmad, Ateed;
Husain, Shahid;
Manzoor, Samiya;
Qahtan, Aref A. A.;
Zarrin, Naima;
Fatema, Mehroosh;
Khan, Wasi

Publication type:

Article

The abnormal photovoltaic effect in BiFeO thin films modulated by bipolar domain orientations and oxygen-vacancy migration.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 8, p. 1, doi. 10.1007/s00339-017-1165-1

By:

Bai, Zilong;
Geng, Wenping;
Zhang, Yan;
Xu, Shuaiqi;
Guo, Huizhen;
Jiang, Anquan

Publication type:

Article

Broadband dielectric properties of multiwalled carbon nanotube/polystyrene composites.

Published in:

Polymer Engineering & Science, 2015, v. 55, n. 1, p. 173, doi. 10.1002/pen.23881

By:

Arjmand, Mohammad;
Sundararaj, Uttandaraman

Publication type:

Article

Structural, dielectric and energy storage enhancement in lead-free ceramic capacitors through BiMg0.5Ti0.5O3 modification of Ba0.7Sr0.3TiO3.

Published in:

Journal of Materials Science, 2024, v. 59, n. 7, p. 2757, doi. 10.1007/s10853-024-09405-x

By:

Kaushiga, C.;
Kaarthik, J.;
Reddy, Salla Gangi;
Annapureddy, V.

Publication type:

Article

Relaxor properties and breakdown strength of Ta doped Sr0.7Bi0.2TiO3-based lead-free ceramics for energy storage applications.

Published in:

Journal of Materials Science, 2023, v. 58, n. 41, p. 16195, doi. 10.1007/s10853-023-09038-6

By:

Li, Yifeng;
Liu, Jingsong;
Zeng, Mengshi;
Li, Huiqin;
Chen, Jingjing;
Tang, Bin

Publication type:

Article

A combinatorial improvement strategy to enhance the energy storage performances of the KNN–based ferroelectric ceramic capacitors.

Published in:

Journal of Materials Science, 2022, v. 57, n. 33, p. 15876, doi. 10.1007/s10853-022-07554-5

By:

Wu, Lingzhi;
Huan, Yu;
Wang, Xinjian;
Li, Changxiao;
Luo, Ying;
Wei, Tao

Publication type:

Article

Al:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 230, doi. 10.1049/el.2015.3539

By:

Takada, Y.;
Okamoto, N.;
Saito, T.;
Kondo, K.;
Yoshimura, T.;
Fujimura, N.;
Higuchi, K.;
Kitajima, A.

Publication type:

Article

Enhanced Energy Storage Performance in La-Doped CaBi 4 Ti 4 O 15 Films Through the Formation of a Weakly Coupled Relaxor.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 24, p. 1998, doi. 10.3390/nano14241998

By:

Liu, Quanlong;
Zhang, Lei;
Ouyang, Jun;
Liu, Yan;
Tang, Zhehong;
Chen, Jieyu;
Guo, Fei;
Zhou, Yunpeng

Publication type:

Article

Mechanism of the Wake-Up and the Split-Up in AlO x /Hf 0.5 Zr 0.5 O x Film.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 14, p. 2146, doi. 10.3390/nano13142146

By:

Kim, Min-Jin;
Kim, Cheol-Jun;
Kang, Bo-Soo

Publication type:

Article

On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 17, p. 3059, doi. 10.3390/nano12173059

By:

Khakimov, Roman R.;
Chernikova, Anna G.;
Koroleva, Aleksandra A.;
Markeev, Andrey M.

Publication type:

Article

Computational and experimental investigation of the crystal orientation control effect on the electric permittivity and magnetic permeability of multiferroic composite materials.

Published in:

Acta Mechanica, 2017, v. 228, n. 8, p. 2879, doi. 10.1007/s00707-015-1526-9

By:

Uetsuji, Yasutomo;
Wada, Takeshi;
Uekita, Yasuyuki;
Terada, Jiro;
Tsuchiya, Kazuyoshi

Publication type:

Article

The frequency-dependent behavior of a ferroelectric single crystal with dislocation arrays.

Published in:

Acta Mechanica, 2017, v. 228, n. 8, p. 2811, doi. 10.1007/s00707-015-1512-2

By:

Wu, H.;
Cao, S.;
Zhu, J.;
Zhang, T.

Publication type:

Article

High-Performance Ferroelectric Capacitors Based on Pt/BaTiO 3 /SrRuO 3 /SrTiO 3 Heterostructures for Nonvolatile Memory Applications.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 4, p. 337, doi. 10.3390/cryst15040337

By:

Fang, Zengyuan;
Peng, Yiming;
Li, Haiou;
Liu, Xingpeng;
Zhai, Jianghui

Publication type:

Article

Performance and Characterization of Additively Manufactured BST Varactor Enhanced by Photonic Thermal Processing.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 11, p. 990, doi. 10.3390/cryst14110990

By:

Molina, Carlos;
Guneroglu, Ugur;
Zaman, Adnan;
Li, Liguan;
Wang, Jing

Publication type:

Article

Phase Transition and Energy Storage Density in Lead-Free Ferroelectric Ba 1−x Sr x TiO 3 (x = 0.1, 0.3, and 0.7) Capacitors.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 4, p. 630, doi. 10.3390/cryst13040630

By:

Castillo, Ivan;
Mishra, Karuna Kara;
Katiyar, Ram S.

Publication type:

Article

Unleashed Remarkable Energy Storage Performance in Bi0.5K0.5TiO3‐based Relaxor Ferroelectrics by Local Structural Fluctuation.

Published in:

Angewandte Chemie, 2025, v. 137, n. 4, p. 1, doi. 10.1002/ange.202416291

By:

Cao, Weiwei;
Li, Tianyu;
Li, Kai;
Huang, Yueyun;
Xie, Hailong;
Yao, Yonghao;
Sun, Zheng;
Lou, Chenjie;
Zhang, Wenda;
Xu, Chengxin;
Zhu, Lifeng;
Xie, Bing;
Zhang, Ji;
Tucker, Matthew G.;
Liu, Hui;
Luo, Huajie;
Tang, Mingxue;
Chen, Jun

Publication type:

Article

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors.

Published in:

Advanced Materials Interfaces, 2023, v. 10, n. 8, p. 1, doi. 10.1002/admi.202202151

By:

Mehmood, Furqan;
Alcala, Ruben;
Vishnumurthy, Pramoda;
Xu, Bohan;
Sachdeva, Ridham;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article