Works matching DE "FERROELECTRIC devices"


Results: 773
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    Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film (Adv. Electron. Mater. 11/2022).

    Published in:
    Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
    By:
    • Lee, Yong Bin;
    • Kim, Beom Yong;
    • Park, Hyeon Woo;
    • Lee, Suk Hyun;
    • Oh, Minsik;
    • Ryoo, Seung Kyu;
    • Lee, In Soo;
    • Byun, Seungyong;
    • Shim, Doosup;
    • Lee, Jae Hoon;
    • Kim, Hani;
    • Kim, Kyung Do;
    • Park, Min Hyuk;
    • Hwang, Cheol Seong
    Publication type:
    Article
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    Si Doped Hafnium Oxide-A 'Fragile' Ferroelectric System.

    Published in:
    Advanced Electronic Materials, 2017, v. 3, n. 10, p. n/a, doi. 10.1002/aelm.201700131
    By:
    • Richter, Claudia;
    • Schenk, Tony;
    • Park, Min Hyuk;
    • Tscharntke, Franziska A.;
    • Grimley, Everett D.;
    • LeBeau, James M.;
    • Zhou, Chuanzhen;
    • Fancher, Chris M.;
    • Jones, Jacob L.;
    • Mikolajick, Thomas;
    • Schroeder, Uwe
    Publication type:
    Article
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