Works matching DE "SEMICONDUCTOR storage devices"

Results: 106

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials.

Published in:

Chips, 2024, v. 3, n. 4, p. 271, doi. 10.3390/chips3040014

By:

Pan, Jiong;
Wang, Zeda;
Zhao, Bingchen;
Yin, Jiaju;
Guo, Pengwen;
Yang, Yi;
Ren, Tian-Ling

Publication type:

Article

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800914

By:

Yoon, Kyung Jean;
Kim, Yumin;
Hwang, Cheol Seong

Publication type:

Article

Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 7, p. N.PAG, doi. 10.1002/pssr.201900136

By:

Tsurumaki‐Fukuchi, Atsushi;
Tsuta, Yusuke;
Arita, Masashi;
Takahashi, Yasuo

Publication type:

Article

Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 8, p. 470, doi. 10.1002/pssr.201510214

By:

Wang, Qing;
Liu, Bo;
Xia, Yangyang;
ZhENg, Yonghui;
Huo, Ruru;
Zhu, Min;
Song, Sannian;
Lv, Shilong;
ChENg, Yan;
Song, Zhitang;
FENg, Songlin

Publication type:

Article

Consumer Storage Devices Enter Data Acquisition Market.

Published in:

EE: Evaluation Engineering, 2006, v. 45, n. 3, p. 26

By:

Lecklider, Tom

Publication type:

Article

Addressing the Flash Memory Challenge.

Published in:

EE: Evaluation Engineering, 2006, v. 45, n. 3, p. 20

By:

Fleeman, Gary

Publication type:

Article

DSOs and MSOs Offer 100-MHz Performance.

Published in:: 2005
Publication type:: Product Review

Van Duzer's Contribution: "Ted Van Duzer's Reflections on Brian Josephson's 80th Birthday".

Published in:

2021

By:

Van Duzer, Theodore (Ted)

Publication type:

Editorial

Flash Forward to the Future in a Millisecond.

Published in:: ComputerWorld Hong Kong, 2009, v. 26, n. 2, p. 11
Publication type:: Article

Advances in flash memory devices.

Published in:

Materials Science (0137-1339), 2010, v. 28, n. 1, p. 105

By:

LUDWIG, C.;
BEUG, M. F.;
KÜSTERS, K.-H.

Publication type:

Article

Scaling of nonvolatile memories to nanoscale feature sizes.

Published in:

Materials Science (0137-1339), 2007, v. 25, n. 1, p. 33

By:

Mikolajick, T.;
Nagel, N.;
Riedel, S.;
Mueller, T.;
Küsters, K.-H.

Publication type:

Article

Efficient implementation of a multi-dimensional index structure over flash memory storage systems.

Published in:

Journal of Supercomputing, 2013, v. 64, n. 3, p. 1055, doi. 10.1007/s11227-011-0679-0

By:

Li, Guohui;
Zhao, Pei;
Yuan, Ling;
Gao, Sheng

Publication type:

Article

Built-In Self-Test Design for the 3D-Stacked Wide-I/O DRAM.

Published in:

Journal of Electronic Testing, 2016, v. 32, n. 2, p. 111, doi. 10.1007/s10836-016-5570-8

By:

Luo, Kun-Lun;
Wu, Ming-Hsueh;
Hsu, Chun-Lung;
Chen, Chen-An

Publication type:

Article

Testing Disturbance Faults in Various NAND Flash Memories.

Published in:

Journal of Electronic Testing, 2014, v. 30, n. 6, p. 643, doi. 10.1007/s10836-014-5487-z

By:

Hou, Chih-Sheng;
Li, Jin-Fu

Publication type:

Article

UNIFORMLY INDEPENDENT I-SPOTTY-BYTE ERROR CONTROL CODES.

Published in:

Algebras, Groups & Geometries, 2018, v. 35, n. 4, p. 427

By:

Jain, Sapna

Publication type:

Article

3D NAND Flash Based on Planar Cells.

Published in:

Computers (2073-431X), 2017, v. 6, n. 4, p. 28, doi. 10.3390/computers6040028

By:

Silvagni, Andrea

Publication type:

Article

Data Storage Through Electromagnetic Waves.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2014, v. 7, n. 3, p. 25

By:

Shetty, Pooja;
Biswas, Aindrila;
Threse, Annie

Publication type:

Article

A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27133, doi. 10.1007/s10854-021-07105-9

By:

Zou, Yong Sheng;
Gan, Chong Leong;
Chung, Min-Hua;
Takiar, Hem

Publication type:

Article

Solid polymer electrolyte-based atomic switches: from materials to mechanisms and applications.

Published in:

Science & Technology of Advanced Materials, 2024, v. 25, n. 1, p. 1, doi. 10.1080/14686996.2024.2342772

By:

Tsuruoka, Tohru;
Terabe, Kazuya

Publication type:

Article

Various Flash Memory Devices of Novel Design.

Published in:

IETE Technical Review, 2009, v. 26, n. 4, p. 247, doi. 10.4103/0256-4602.52994

By:

Jang-Gn Yun;
Jong Duk Lee;
Byung-Gook Park

Publication type:

Article

The ovonic threshold switching characteristics in SixTe1−x based selector devices.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 11, p. 1, doi. 10.1007/s00339-018-2153-9

By:

Gao, Tian;
Feng, Jie;
Ma, Haili;
Zhu, Xi

Publication type:

Article

Impact of threshold voltage variation on 1S1R crossbar array with threshold switching selectors.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 5, p. 1, doi. 10.1007/s00339-017-0973-7

By:

Song, Bing;
Xu, Hui;
Liu, Haijun;
Li, Qingjiang

Publication type:

Article

Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-36076-0

By:

Lee, Yong-Bok;
Kang, Min-Ho;
Choi, Pan-Kyu;
Kim, Su-Hyun;
Kim, Tae-Soo;
Lee, So-Young;
Yoon, Jun-Bo

Publication type:

Article

Solvents Effects on Film Morphologies and Memory Behavior of a Perylenediimide‐Containing Pendent Polymer.

Published in:

Chemistry - An Asian Journal, 2018, v. 13, n. 14, p. 1784, doi. 10.1002/asia.201800331

By:

Wang, Ming;
Zhang, Qi‐jian;
Li, Zhuang;
Li, Hua;
Lu, Jian‐Mei

Publication type:

Article

A joint encoder–decoder framework for supporting energy efficient audio decoding.

Published in:

Multimedia Systems, 2009, v. 15, n. 2, p. 101, doi. 10.1007/s00530-009-0152-6

By:

Huang, Wendong;
Wang, Ye

Publication type:

Article

Three-dimensional AND flash memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 11, p. 739, doi. 10.1049/el.2017.0465

By:

Kim, Y.;
Park, I. H.;
Kwon, H. T.;
Wee, D.;
Park, B.-G.

Publication type:

Article

SRAM cell with asymmetric pass-gate nMOSFETs for embedded memory applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1172, doi. 10.1049/el.2016.0938

By:

Weiwei He;
Jing Chen;
Jiexin Luo;
Zhan Chai;
Xi Wang

Publication type:

Article

Skew cancellation technique for >256-Gbyte/s high-bandwidth memory (HBM).

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1155, doi. 10.1049/el.2015.4001

By:

Ahn, K.;
Yoo, C.

Publication type:

Article

MFSFET two-bit 1T1C DRAM memory design and empirical data.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 6, p. 477, doi. 10.1049/el.2015.2874

By:

Hunt, M. R.;
Mitchell, C.;
McCartney, C. L.;
Ho, F. D.

Publication type:

Article

Reconfigurable physical unclonable function based on probabilistic switching of RRAM.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 8, p. 615, doi. 10.1049/el.2014.4375

By:

Chen, A.

Publication type:

Article

through the phases.

Published in:: Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 2, p. 55, doi. 10.1049/el.2013.4247
Publication type:: Article

LDF (less dirty first): dirtiness-aware cache replacement policy for PCM main memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 25, p. 1607, doi. 10.1049/el.2013.1418

By:

S. Yoo;
E. Lee;
H. Bahn

Publication type:

Article

Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.

Published in:

Scientific Reports, 2015, p. 17103, doi. 10.1038/srep17103

By:

Arita, Masashi;
Takahashi, Akihito;
Ohno, Yuuki;
Nakane, Akitoshi;
Tsurumaki-Fukuchi, Atsushi;
Takahashi, Yasuo

Publication type:

Article

In Situ Thermal Decomposition of Potassium Borohydride for Borophene Synthesis and Its Application in a High-Performance Non-Volatile Memory Device.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 5, p. 362, doi. 10.3390/nano15050362

By:

Tian, Qian;
Liang, Xinchao;
Xu, Maoping;
Liu, Yi;
Wu, Qilong;
Tai, Guoan

Publication type:

Article

Single-Crystalline Nanowires of Molecular Ferroelectric Semiconductors for Optoelectronic Memory.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 23, p. 1920, doi. 10.3390/nano14231920

By:

Qiu, Xinxia;
Xu, Mingsheng;
Cong, Chunxiao;
Qiu, Zhi-Jun;
Hu, Laigui;
Liu, Ran

Publication type:

Article

Effect of Process Temperature on Density and Electrical Characteristics of Hf 0.5 Zr 0.5 O 2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 3, p. 548, doi. 10.3390/nano12030548

By:

Kim, Hak-Gyeong;
Hong, Da-Hee;
Yoo, Jae-Hoon;
Lee, Hee-Chul

Publication type:

Article

Area-Scalable 10 9 -Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 1, p. 101, doi. 10.3390/nano11010101

By:

Takahashi, Mitsue;
Sakai, Shigeki

Publication type:

Article

Fabrication of Cobalt Ferrite Nanoparticles with a Facile Approach: Variations in Structural, Dielectric and Morphological Properties by Influence of Annealing Temperature.

Published in:

International Journal of Nanoelectronics & Materials, 2022, v. 15, n. 1, p. 37

By:

Channa, Naimatullah;
Abbas, Nasir;
Khan, Junaid Kareem;
Khalid, Muhammad;
HafeezUllah, Malik Muhammad;
Kashif, Muhammad;
Inam, Sehrish;
Arshad, Maria

Publication type:

Article

An Efficient Spectral Dynamical Core for Distributed Memory Computers.

Published in:

Monthly Weather Review, 2002, v. 130, n. 5, p. 1384, doi. 10.1175/1520-0493(2002)130<1384:AESDCF>2.0.CO;2

By:

Rivier, L.;
Loft, R.;
Polvani, L. M.

Publication type:

Article

Design and Analysis of SRAM Cell using Negative Bit-Line Write Assist Technique and Separate Read Port for High-Speed Applications.

Published in:

Journal of Circuits, Systems & Computers, 2021, v. 13, n. 15, p. 1, doi. 10.1142/S0218126621502704

By:

Mishra, Jitendra Kumar;
Mankali, Lakshmi Likhitha;
Kandpal, Kavindra;
Misra, Prasanna Kumar;
Goswami, Manish

Publication type:

Article

AN EVALUATION OF A CONFIGURABLE VLIW MICROARCHITECTURE FOR EMBEDDED DSP APPLICATIONS.

Published in:

Journal of Circuits, Systems & Computers, 2004, v. 13, n. 6, p. 1321, doi. 10.1142/S0218126604001994

By:

LIU, WANLI;
ALBONESI, DAVID H.;
GOSTOMSKI, JOHN;
PALUM, LLOYD;
HINTERBERGER, DAVE;
WANZENRIED, RICK;
INDOVINA, MARK

Publication type:

Article

Don’t make cache too complex: A simple probability-based cache management scheme for SSDs.

Published in:

PLoS ONE, 2017, v. 12, n. 3, p. 1, doi. 10.1371/journal.pone.0174375

By:

Baek, Seungjae;
Cho, Sangyeun;
Choi, Jongmoo

Publication type:

Article

Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures.

Published in:

Journal of Experimental Nanoscience, 2013, v. 8, n. 3, p. 389, doi. 10.1080/17458080.2012.708440

By:

Ray, SounakK;
Panda, Debashis;
Aluguri, Rakesh

Publication type:

Article

Member News.

Published in:: Chemistry & Industry, 2023, v. 87, n. 11, p. 46, doi. 10.1002/cind.10195
Publication type:: Article

A spill data aware memory assignment technique for improving power consumption of multimedia memory systems.

Published in:

Multimedia Tools & Applications, 2019, v. 78, n. 5, p. 5463, doi. 10.1007/s11042-018-6783-x

By:

Youn, Jonghee;
Cho, Doosan

Publication type:

Article

Low Power and Suppressed Noise 6T, 7T SRAM Cell Using 18 nm FinFET.

Published in:

Wireless Personal Communications, 2023, v. 130, n. 1, p. 103, doi. 10.1007/s11277-023-10277-8

By:

Santosh Kumar, T.;
Tripathi, Suman Lata

Publication type:

Article

1T-DRAM Cell with Different FET Technologies for Low Power Application.

Published in:

Wireless Personal Communications, 2023, v. 128, n. 1, p. 471, doi. 10.1007/s11277-022-09963-w

By:

Addala, Durgesh;
Sinha, Sanjeet Kumar;
Gadiparthi, Mohan Chandu;
Chander, Sweta

Publication type:

Article

Using DRAM Buffer to Reduce Persistence and Consistence Overheads of Persistent Memory.

Published in:

Wireless Personal Communications, 2018, v. 102, n. 4, p. 3879, doi. 10.1007/s11277-018-5418-x

By:

Tian, Yuchuan;
Wang, Fang

Publication type:

Article

Efficient low-complexity two-dimensional equalisation technique for multi-level cell flash memory storage systems.

Published in:

IET Communications (Wiley-Blackwell), 2018, v. 12, n. 14, p. 1671, doi. 10.1049/iet-com.2017.0440

By:

Ashrafi, Reza A.;
Pusane, Ali E.

Publication type:

Article

g-byte Error Control Codes.

Published in:

Journal of Analysis & Applications, 2025, v. 23, n. 1, p. 1

By:

Jain, S.

Publication type:

Article