Works matching DE "FERROELECTRIC RAM"

Results: 222

SISTEMA EXPERIMENTAL PARA EL ESTUDIO DE LA HISTÉRESIS FERROEL& 201;CTRICA EN CAPAS DELGADAS.

Published in:

Revista Cubana de Física, 2016, v. 33, n. 1, p. 59

By:

MORENO-CRESPO, C. E.;
PéLAIZ-BARRANCO, A.;
MÉNDEZ-GONZÁLEZ, Y.;
SANTANA-GIL, A.;
CALDERCÓN-PIñAR, F.;
GONZÁLEZ-ABREU, Y.

Publication type:

Article

Instalación para medir el lazo de histéresis y las corrientes de conmutación en láminas delgadas de materiales ferroeléctricos.

Published in:

Revista Cubana de Física, 2009, v. 26, n. 2A, p. 169

By:

Rivero, D.;
Pardo, L.;
Jiménez, R.

Publication type:

Article

Etching new IC materials for memory devices.

Published in:

Solid State Technology, 1998, v. 41, n. 8, p. 53

By:

DeOrnellas, Stephen P.;
Cofer, Alferd

Publication type:

Article

The TEDS Smart Sensor Revolution.

Published in:

Computing & Control Engineering, 2004, v. 15, n. 4, p. 25, doi. 10.1049/cce:20040409

By:

Wynn, Ryan

Publication type:

Article

'PLASTIC' MEMORY COULD DRAMATICALLY LOWER STORAGE DATA COSTS.

Published in:: Computing & Control Engineering, 2003, v. 14, n. 6, p. 4
Publication type:: Article

Effect of temperature on the electrical properties of nanocrystalline CaTiFeO perovskite.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 620, doi. 10.1007/s10854-015-3797-2

By:

Mathu, Sridhar Panday;
Nehru, Priya Dharishini;
Murugan, Vinoth;
Arumugam, Karthik;
Sundaramoorthy, Arunmetha;
Venkatachalam, Rajendran

Publication type:

Article

Sol–gel ZnO in organic transistor-based non-volatile memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 2, p. 125, doi. 10.1007/s10854-009-9879-2

By:

Tianyi Wu;
Aw, Kean C.;
Salim, Noviana Tjitra;
Wei Gao

Publication type:

Article

Fabrication and dielectric properties of textured Na0.5Bi0.5TiO3-BaTiO3 ceramics by RTGG method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1228, doi. 10.1007/s10854-007-9547-3

By:

Feng Gao;
Li-Hong Cheng;
Rong-Zi Hong;
Jia-Ji Liu;
Yong-Hong Yao;
Chang-Sheng Tian

Publication type:

Article

Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 111, doi. 10.1007/s10854-007-9516-x

By:

Wosinski, Tadeusz;
Figielski, Tadeusz;
Morawski, Andrzej;
Makosa, Andrzej;
Osinniy, Viktor;
Wrobel, Jerzy;
Sadowski, Janusz

Publication type:

Article

Preparation and structural characteristics of ZrT4 thin films by plasma enhanced chemical vapor deposition.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 23, p. 1679, doi. 10.1023/B:JMSL.0000004647.81141.c3

By:

Lee, Won Gyu;
Yang, O-Bong

Publication type:

Article

Application of BiFeO and BiTiO in ferroelectric memory, phase shifters of a phased array, and microwave HEMTs.

Published in:

Inorganic Materials, 2013, v. 49, n. 10, p. 1031, doi. 10.1134/S0020168513100038

By:

Kalinkin, A.;
Kozhbakhteev, E.;
Polyakov, A.;
Skorikov, V.

Publication type:

Article

Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO3 Heterostructures.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 7, p. 1, doi. 10.1002/aelm.201800171

By:

Li, Dong;
Zheng, Dongxing;
Jin, Chao;
Li, Peng;
Liu, Xinjun;
Zheng, Wanchao;
Bai, Haili

Publication type:

Article

Problems in Crystal Chemistry of Ferroelectric and Antiferroelectric Perovskites PbB′0.5B″0.5O3.

Published in:

Crystallography Reports, 2004, v. 49, n. 5, p. 719, doi. 10.1134/1.1803296

By:

Isupov, V. A.

Publication type:

Article

Water-Soluble Ferroelectric Crystals with Inhomogeneous Impurity Distribution.

Published in:

Crystallography Reports, 2004, v. 49, n. 2, p. 206, doi. 10.1134/1.1690417

By:

Shuts, V. N.;
Kashevich, I. F.;
Watts, B. E.

Publication type:

Article

67.4L: Late-News Paper: Electrically Suppressed Helix Ferroelectric Liquid Crystals a better Alternative for the IPS Displays.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1001, doi. 10.1002/sdtp.10324

By:

Srivastava, Abhishek K.;
Tseng, Man‐Chun;
Chigrinov, Vladimir. G.;
Kwok, Hoi‐Sing

Publication type:

Article

Transmission of classical and quantum information through a quantum memory channel with damping.

Published in:

European Physical Journal D (EPJ D), 2012, v. 66, n. 6, p. 1, doi. 10.1140/epjd/e2012-20593-7

By:

D'Arrigo, A.;
Benenti, G.;
Falci, G.

Publication type:

Article

Fabrication and Study of Memory Cell Switching Properties Based on Cu2S Compound.

Published in:

Al-Rafadain Engineering Journal, 2012, v. 20, n. 6, p. 23

By:

Khaleel Mohammad, Khalid;
Hassan Taha, Faris

Publication type:

Article

The Challenges of Memory Mix Test.

Published in:

EE: Evaluation Engineering, 2004, v. 43, n. 8, p. 20

By:

Wong, Sam

Publication type:

Article

Investigation on the Nonlinear Excitation in an Array of Spin Valve Pillars During the propagation of Electromagnetic Wave.

Published in:

Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 6, p. 1823, doi. 10.1007/s10948-011-1130-8

By:

Amuda, Rajamani;
Brinda, Arumugam

Publication type:

Article

Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices.

Published in:

Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 83, doi. 10.1007/s10948-009-0567-5

By:

Wosinski, T.;
Wesela, W.;
Makosa, A.;
Figielski, T.;
Sadowski, J.

Publication type:

Article

Spatio-Cultural Evolution as Information Dynamics: Part I.

Published in:

Foundations of Science, 2012, v. 17, n. 2, p. 125, doi. 10.1007/s10699-011-9230-2

By:

Posner, Zeev

Publication type:

Article

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 2, p. 409, doi. 10.1007/s00339-008-4782-x

By:

Dong, R.;
Lee, D. S.;
Pyun, M. B.;
Hasan, M.;
Choi, H. J.;
Jo, M. S.;
Seong, D. J.;
Chang, M.;
Heo, S. H.;
Lee, J. M.;
Park, H. K.;
Hyunsang Hwang

Publication type:

Article

Growth and characterization of (001)-oriented Pb(Zr0.52Ti0.48)O3/LaNiO3/LaAlO3 heterostructures prepared by pulsed laser deposition.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 7, p. 1517, doi. 10.1007/s00339-003-2379-y

By:

Zhu, T.J.;
Lu, L.

Publication type:

Article

Exploring the morphotropic phase boundary in copper(II)-modified Pb[Zr0.54Ti0.46]O3 ferroelectrics.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 1, p. 51, doi. 10.1007/s00339-004-3013-3

By:

Eichel, R.-A.;
Dinse, K.-P.;
Kungl, H.;
Hoffmann, M.J.;
Ozarowski, A.;
van Tol, J.;
Brunel, L.C.

Publication type:

Article

New electrode-barrier structures for high density ferroelectric memories.

Published in:

Applied Physics A: Materials Science & Processing, 2001, v. 72, n. 1, p. 13, doi. 10.1007/s003390000624

By:

Vedula, R.;
Desu, C.S.;
Tirumala, S.;
Bhatt, H.D.;
Desu, S.B.;
Lee, K.B.

Publication type:

Article

Theoretical Investigation of the Optical Properties of (Ge0.17Se0.83)100-xInx Glass System.

Published in:

IUP Journal of Physics, 2011, v. 4, n. 3, p. 50

By:

Tiwari, Saurabh;
Saxena, Ashish Kumar;
Saxena, Dinesh

Publication type:

Article

Recent progress in gold nanoparticle-based non-volatile memory devices.

Published in:

Gold Bulletin, 2010, v. 43, n. 3, p. 189, doi. 10.1007/BF03214986

By:

Jang-Sik Lee

Publication type:

Article

Conditions of steady switching in phase-transition memory cells.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 498, doi. 10.1134/S1063782615040181

By:

Popov, A.;
Salnikov, S.;
Anufriev, Yu.

Publication type:

Article

THE CALCULATION OF ABSOLUTE PIEZOOPTIC CONSTANTS OF TGS CRYSTALS WITH L-TREONINE ADMIXTURE.

Published in:

Journal of Physical Studies, 2011, v. 15, n. 2, p. 2703:1, doi. 10.30970/jps.15.2703

By:

Stadnyk, V. Yo.;
Romanyuk, M. O.;
Kiryk, Yu. I.

Publication type:

Article

Crystal Phase and Orientation Control in Integrated Ferroelectric CaBi4Ti4O15 Using a Tailored Liquid of Alkoxides.

Published in:

International Journal of Applied Ceramic Technology, 2005, v. 2, n. 1, p. 64, doi. 10.1111/j.1744-7402.2005.02006.x

By:

Kato, Kazumi;
Desheng Fu;
Tanaka, Kiyotaka;
Suzuki, Kazuyuki;
Kimura, Tatsuo;
Nishizawa, Kaori;
Miki, Takeshi

Publication type:

Article

Characterization and Properties of Nickel Aluminide Nanocrystals in an Alumina Layer for Nonvolatile Memory Applications.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 6, p. 1345, doi. 10.1007/s11664-011-1576-2

By:

Kuo, Dong-Hau;
Chen, Yung-Chuan;
He, Jheng-Yu;
Chu, Jinn

Publication type:

Article

Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 22, p. 3446, doi. 10.1002/adfm.201304004

By:

Wen, Guanyin;
Ren, Zhongjie;
Sun, Dianming;
Zhang, Tingjie;
Liu, Lili;
Yan, Shouke

Publication type:

Article

High-Performance Ferroelectric Memory Based on Phase-Separated Films of Polymer Blends.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 10, p. 1372, doi. 10.1002/adfm.201302056

By:

Khan, Mohammad A.;
Bhansali, Unnat S.;
Almadhoun, Mahmoud N.;
Odeh, Ihab N.;
Cha, Dongkyu;
Alshareef, Husam N.

Publication type:

Article

A Simple Fractionally Integrated Model with a Time-varying Long Memory Parameter d t .

Published in:

Computational Economics, 2008, v. 31, n. 3, p. 225, doi. 10.1007/s10614-007-9115-1

By:

Boutahar, Mohamed;
Dufrénot, Gilles;
Péguin-Feissolle, Anne

Publication type:

Article

Quality improvement by using grey prediction tool compensation model for uncoated and TiAlCN-coated tungsten carbide tools in depanel process of memory modules.

Published in:

International Journal of Advanced Manufacturing Technology, 2009, v. 40, n. 9/10, p. 857, doi. 10.1007/s00170-008-1410-z

By:

Lin, Zone-Ching;
Ho, Chih-Yuan

Publication type:

Article

New Mechanisms of Optical Writing/Reading in Magnetic Media.

Published in:

Technical Physics, 2002, v. 47, n. 6, p. 703, doi. 10.1134/1.1486192

By:

Nikolaev, A. V.;
Nikolaeva, E. P.;
Onishchuk, V. N.;
Logginov, A. S.

Publication type:

Article

A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 110, n. 1, p. 173, doi. 10.1007/s00339-012-7083-3

By:

Fu, Yingchun;
Wang, Xiaofeng;
Zhang, Jiayong;
Wang, Xiaodong;
Chang, Chun;
Ma, Huili;
Cheng, Kaifang;
Chen, Xiaogang;
Song, Zhitang;
Feng, Songlin;
Ji, An;
Yang, Fuhua

Publication type:

Article

SbTe-HfO composite films for low-power phase change memory application.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 105, n. 1, p. 183, doi. 10.1007/s00339-011-6478-x

By:

Lu, Yegang;
Song, Sannian;
Song, Zhitang;
Ren, Kun;
Liu, Bo;
Feng, Songlin

Publication type:

Article

Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 983, doi. 10.1007/s00339-011-6280-9

By:

Yoon, Sung-Min;
Yang, Shinhyuk;
Jung, Soon-Won;
Byun, Chun-Won;
Ryu, Min-Ki;
Cheong, Woo-Seok;
Kim, ByeongHoon;
Oh, HimChan;
Ko Park, Sang-Hee;
Hwang, Chi-Sun;
Kang, Seung-Youl;
Ryu, Ho-Jun;
Yu, Byoung-Gon

Publication type:

Article

Mobile phones as a new memory aid: a preliminary investigation using case studies.

Published in:

Brain Injury, 2001, v. 15, n. 4, p. 305, doi. 10.1080/026990501750111256

By:

Wade, Tracy K.;
Troy, Juliette C.

Publication type:

Article

Memristance effect of metal-insulator-metal structures using Al2O3 film as active layer for emergent memory devices.

Published in:

Superficies y Vacío, 2014, v. 27, n. 1, p. 1

By:

Molina, J.;
Valderrama, R.;
Calleja, W.;
Rosales, P.;
Zúñiga, C.;
Gutiérrez, E.;
Hidalga, J.;
Torres, A.

Publication type:

Article

MEASUREMENT OF DIELECTRIC DISPERSION IN MULTI-FERROIC TbMnO3.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2007, v. 21, n. 18/19, p. 3425, doi. 10.1142/S0217979207044676

By:

SAKATA, H.;
HOSOKAWA, K.;
KATO, T.

Publication type:

Article

Direct drawing of gel fibers enabled by twist-gel spinning process.

Published in:

Polymer Engineering & Science, 2015, v. 55, n. 6, p. 1389, doi. 10.1002/pen.24082

By:

Wyatt, Tom;
Gainey, Teyana;
Fang, Xudong;
Yao, Donggang

Publication type:

Article

First Principles Approach to BaTiO3.

Published in:

Turkish Journal of Physics, 2006, v. 30, n. 4, p. 277

By:

Uludoğan, M.;
Çağin, T.

Publication type:

Article

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

Published in:

Scientific Reports, 2015, p. 12415, doi. 10.1038/srep12415

By:

Kundu, Souvik;
Chen, Bo;
Song, Hyun-Cheol;
Kumar, Prashant;
Priya, Shashank;
Clavel, Michael;
Hudait, Mantu K.;
Biswas, Pranab;
Banerji, Pallab;
Halder, Nripendra N.;
Sanghadasa, Mohan

Publication type:

Article

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends.

Published in:

Scientific Reports, 2015, p. 10683, doi. 10.1038/srep10683

By:

Zhou, Ye;
Han, Su-Ting;
Yan, Yan;
Zhou, Li;
Huang, Long-Biao;
Zhuang, Jiaqing;
Sonar, Prashant;
Roy, V. A. L.

Publication type:

Article

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

Published in:

Scientific Reports, 2015, p. 8494, doi. 10.1038/srep08494

By:

Kundu, Souvik;
Maurya, Deepam;
Zhou, Yuan;
Priya, Shashank;
Clavel, Michael;
Hudait, Mantu K.;
Halder, Nripendra N.;
Banerji, Pallab

Publication type:

Article

Design technology of stacked NAND-type FeRAM with two-transistor-type memory cell.

Published in:

Electronics & Communications in Japan, 2013, v. 96, n. 4, p. 41, doi. 10.1002/ecj.10428

By:

Sugano, Koichi;
Watanabe, Shigeyoshi

Publication type:

Article

Solar energy: Ferroelectric photovoltaics.

Published in:

2010

By:

Haitao Huang

Publication type:

Opinion

Ferroelectrics: Chaotic memory.

Published in:

Nature Physics, 2014, v. 10, n. 1, p. 9, doi. 10.1038/nphys2845

By:

Pignolet, Alain

Publication type:

Article