Works matching DE "INDIUM arsenide"

Results: 340

Pnictide-based colloidal quantum dots for infrared sensing applications.

Published in:

Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-025-00489-y

By:

Seo, Jaeyoung;
Kim, Seongchan;
Yeo, Dongjoon;
Gwak, Namyoung;
Oh, Nuri

Publication type:

Article

The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III–V Quantum Dots.

Published in:

Angewandte Chemie, 2015, v. 127, n. 48, p. 14507, doi. 10.1002/ange.201505972

By:

Franke, Daniel;
Harris, Daniel K.;
Xie, Lisi;
Jensen, Klavs F.;
Bawendi, Moungi G.

Publication type:

Article

Emission and elastic strain study in GaAs/InGaAs/InGaAs/GaAs quantum wells with embedded InAs quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7126, doi. 10.1007/s10854-017-6536-z

By:

Vega-Macotela, L.;
Torchynska, T.;
Polupan, G.

Publication type:

Article

Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 581, doi. 10.1007/s10854-013-1626-z

By:

Sun, Yurun;
Li, Kuilong;
Dong, Jianrong;
Zeng, Xulu;
Yu, Shuzhen;
Zhao, Yongming;
Zhao, Chunyu;
Yang, Hui

Publication type:

Article

Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3

By:

Matsui, Y.;
Miyoshi, Y.

Publication type:

Article

Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH)CrO-HBr solutions.

Published in:

Inorganic Materials, 2017, v. 53, n. 8, p. 781, doi. 10.1134/S0020168517080106

By:

Levchenko, I.;
Stratiychuk, I.;
Tomashyk, V.;
Malanych, G.;
Stanetskaya, A.

Publication type:

Article

Carrier transport in multilayer InAs/GaAs quantum dot heterostructures grown by ion beam crystallization.

Published in:

Inorganic Materials, 2015, v. 51, n. 3, p. 197, doi. 10.1134/S0020168515020144

By:

Pashchenko, A.;
Chebotarev, S.;
Lunin, L.

Publication type:

Article

Etching behavior of GaAs, GaSb, InAs, and InSb in aqueous HO-HBr-ethylene glycol solutions.

Published in:

Inorganic Materials, 2012, v. 48, n. 9, p. 867, doi. 10.1134/S002016851208016X

By:

Tomashik, Z.;
Shelyuk, I.;
Tomashik, V.;
Okrepka, G.;
Moravec, P.;
Stratiichuk, I.

Publication type:

Article

Heat capacity of GaB and InB (B = P, As, Sb) above 298 K.

Published in:

Inorganic Materials, 2010, v. 46, n. 9, p. 1007, doi. 10.1134/S0020168510090165

By:

Pashinkin, A.;
Fedorov, V.;
Malkova, A.;
Mikhailova, M.

Publication type:

Article

Growth and properties of Al2O3 and SiO2 nanolayers on III–V semiconductors.

Published in:

Inorganic Materials, 2010, v. 46, n. 1, p. 38, doi. 10.1134/S0020168510010097

By:

Ezhovskii, Yu. K.;
Kholkin, V. Yu.

Publication type:

Article

Chemical Interaction of Indium Arsenide and Gallium Antimonide with Sulfur.

Published in:

Inorganic Materials, 2003, v. 39, n. 3, p. 215, doi. 10.1023/A:1022657020529

By:

Kompanichenko, N. M.;
Omel'chuk, A. A.;
Kozin, V. F.

Publication type:

Article

Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface.

Published in:

Applied Nanoscience, 2018, v. 8, n. 5, p. 949, doi. 10.1007/s13204-018-0788-7

By:

Levchenko, Iryna;
Tomashyk, Vasyl;
Stratiychuk, Iryna;
Malanych, Galyna;
Korchovyi, Andrii;
Kryvyi, Serhii;
Kolomys, Oleksandr

Publication type:

Article

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon.

Published in:

Applied Nanoscience, 2017, v. 7, n. 7, p. 365, doi. 10.1007/s13204-017-0585-8

By:

Anyebe, Ezekiel A.

Publication type:

Article

Wave‐Function Topology Effects on Charged Excitons in Type‐II InAs/GaAsSb Quantum Dots and Rings.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 1, p. N.PAG, doi. 10.1002/pssr.201800314

By:

Llorens, José M.;
Alén, Benito

Publication type:

Article

Toward Quantum Hall Effect in a Josephson Junction.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 1, p. N.PAG, doi. 10.1002/pssr.201800222

By:

Guiducci, Stefano;
Carrega, Matteo;
Biasiol, Giorgio;
Sorba, Lucia;
Beltram, Fabio;
Heun, Stefan

Publication type:

Article

Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 7, p. 658, doi. 10.1002/pssr.201409106

By:

Anyebe, E. A.;
Zhuang, Q.;
Sanchez, A. M.;
Lawson, S.;
Robson, A. J.;
Ponomarenko, L.;
Zhukov, A.;
Kolosov, O.

Publication type:

Article

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 32/33, p. -1, doi. 10.1142/S021798491650384X

By:

Safa, S.;
Asgari, A.

Publication type:

Article

Study of surface-enhanced Raman scattering of InAs particles of subwavelength apertures at terahertz frequencies.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 31, p. -1, doi. 10.1142/S0217984915501973

By:

Liu, Ying;
Ren, Guangjun;
Du, Rongjian;
Zhang, Yongming;
Tan, Tianbo;
Wang, Yaqi;
Yao, Jianquan

Publication type:

Article

GROUND STATE ENERGY LEVELS OF INDIUM ARSENIDE QUANTUM DOTS CALCULATED BY A SINGLE BAND EFFECTIVE MASS MODEL USING REPRESENTATIVE STRAINED INPUT PROPERTIES.

Published in:

Modern Physics Letters B, 2013, v. 27, n. 16, p. 1, doi. 10.1142/S0217984913501200

By:

HYUNHO SHIN;
JONG-BONG KIM

Publication type:

Article

Puntos Cuánticos Autoensamblados de InAs Crecidos Sobre Substratos de GaAs por Epitaxia de Haces Moleculares.

Published in:

Revista Colombiana de Física, 2008, v. 40, n. 1, p. 183

By:

Pulzara, A.;
Cruz-Hernández, E.;
Ramirez, J. Rojas;
Bernal, M.;
Méndez-García, V. H.;
López, M. López

Publication type:

Article

InAs light-to-heavy hole effective mass ratio determined experimentally from mobility spectrum analysis.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144567

By:

Wróbel, Jarosław;
Umana-Membreno, Gilberto A.;
Boguski, Jacek;
Złotnik, Sebastian;
Kowalewski, Andrzej;
Moszczyński, Paweł;
Antoszewski, Jarek;
Faraone, Lorenzo;
Wróbel, Jerzy

Publication type:

Article

Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144564

By:

Boguski, Jacek;
Wróbel, Jarosław;
Złotnik, Sebastian;
Budner, Bogusław;
Liszewska, Malwina;
Kubiszyn, Łukasz;
Michałowski, Paweł P.;
Ciura, Łukasz;
Moszczyński, Paweł;
Odrzywolski, Sebastian;
Jankiewicz, Bartłomiej;
Wróbel, Jerzy

Publication type:

Article

Interface influence on structural properties of InAs/GaSb type-II superlattices.

Published in:

Optica Applicata, 2009, v. 39, n. 4, p. 875

By:

KUBACKA-TRACZYK, JUSTYNA;
SANKOWSKA, IWONA;
KANIEWSKI, JANUSZ

Publication type:

Article

Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 627

By:

PRZESŁAWSKI, TOMASZ;
WOLKENBERG, ANDRZEJ;
KANIEWSKI, JANUSZ;
REGIŃSKI, KAZIMIERZ;
JASIK, AGATA

Publication type:

Article

Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 471

By:

KOZIČ, ANTONI;
SUŽIEDELIS, ALGIRDAS;
PETKUN, VALERIJ;
ČERŠKUS, AURIMAS;
SHTRIKMANN, HADAS;
GRADAUSKAS, JONAS;
KUNDROTAS, JURGIS;
AŠMONTAS, STEPONAS

Publication type:

Article

Deep centers in InGaAs/InP layers grown by molecular beam epitaxy.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 457

By:

KISIEL, MARCIN;
SKROBAS, KAZIMIERZ;
ZDYB, RYSZARD;
JAŁOCHOWSKI, MIECZYSŁAW

Publication type:

Article

Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 399

By:

KOSMALA, MICHAŁ&;
REGIŃSKI, KAZIMIERZ;
KOSIEL, KAMIL

Publication type:

Article

Diagnostics of semiconductor structures by means of an apertureless near-field terahertz microscope.

Published in:

Radiophysics & Quantum Electronics, 2012, v. 54, n. 8/9, p. 577, doi. 10.1007/s11141-012-9316-x

By:

Trukhin, V.;
Golubo, A.;
Lyutetsky, A.;
Matveyev, B.;
Pikhtin, N.;
Samoilov, L.;
Sapozhnikov, I.;
Tarasov, I.;
Fel'shtyn, M.;
Khor'kov, D.

Publication type:

Article

A 2D photonic crystal indium arsenide based with dual micro-cavities coupled to a waveguide as a platform for a high sensitivity pressure sensor.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 3, p. 1, doi. 10.1007/s11082-022-04533-7

By:

Zouache, Tarek;
Hocini, Abdesselam

Publication type:

Article

A proposal for a Giga Pascal pressure sensor using one dimensional photonic waveguide at 850 /1310/1550 nm signal.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 1, p. 1, doi. 10.1007/s11082-022-04182-w

By:

Mishra, C. S.;
Mondal, Subhra Rani;
Arunachalam, Rajesh;
Nayak, M. R.;
Tripathy, S. K.;
Palai, G.

Publication type:

Article

Optical Retardation based on Tunneling-Induced Transparency in Quantum Dot Slow light Devices.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 9, p. 1, doi. 10.1007/s11082-022-03909-z

By:

Mardani, Hossein;
Kaatuzian, Hassan;
Choupanzadeh, Bahram

Publication type:

Article

Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses.

Published in:

Optical & Quantum Electronics, 2018, v. 50, n. 6, p. 1, doi. 10.1007/s11082-018-1528-7

By:

Ašmontas, Steponas;
Raguotis, Romas;
Bumelienė, Skaidra

Publication type:

Article

Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 4, p. 1, doi. 10.1007/s11082-017-0975-x

By:

Zaaboub, Z.;
Hassen, F.;
Naffouti, M.;
Marie, X.;
M'ghaieth, R.;
Maaref, H.

Publication type:

Article

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 2, p. 1, doi. 10.1007/s11082-017-0891-0

By:

Dyksik, M.;
Motyka, M.;
Weih, R.;
Höfling, S.;
Kamp, M.;
Sęk, G.;
Misiewicz, J.

Publication type:

Article

On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance.

Published in:

Optics & Spectroscopy, 2021, v. 129, n. 11, p. 1231, doi. 10.1134/S0030400X21090101

By:

Karandashev, S. A.;
Lukhmyrina, T. S.;
Matveev, B. A.;
Remennyi, M. A.;
Usikova, A. A.

Publication type:

Article

In situ cleavage mechanism for semiconductor single crystals for ultrahigh-vacuum scanning tunneling microscope.

Published in:

Instruments & Experimental Techniques, 2007, v. 50, n. 1, p. 129, doi. 10.1134/S0020441207010198

By:

Oreshkin, S.;
Mantsevich, V.;
Muzychenko, D.;
Oreshkin, A.;
Panov, V.;
Radchenko, I.

Publication type:

Article

Investigation of InAsSbP quantum dot mid-infrared sensors.

Published in:

Journal of Sensors & Sensor Systems, 2015, v. 4, n. 2, p. 249, doi. 10.5194/jsss-4-249-2015

By:

Harutyunyan, V. G.;
Gambaryan, K. M.;
Aroutiounian, V. M.;
Harutyunyan, I. G.

Publication type:

Article

Strain-Induced Band Profile of Stacked InAs/GaAs Quantum Dots.

Published in:

Walailak Journal of Science & Technology, 2014, v. 11, n. 5-8, p. 403

By:

SUKKABOT, Worasak

Publication type:

Article

Interface formation of iron on In-terminated InAs(001).

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 79, n. 8, p. 1935, doi. 10.1007/s00339-003-2096-6

By:

Kneppe, M.;
Berse, M.;
Köhler, U.

Publication type:

Article

High electron mobility in strained GaAs nanowires.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-27006-z

By:

Balaghi, Leila;
Shan, Si;
Fotev, Ivan;
Moebus, Finn;
Rana, Rakesh;
Venanzi, Tommaso;
Hübner, René;
Mikolajick, Thomas;
Schneider, Harald;
Helm, Manfred;
Pashkin, Alexej;
Dimakis, Emmanouil

Publication type:

Article

Amino‐Arsine and Amino‐Phosphine Based Synthesis of InAs@InP@ZnSe core@shell@shell Quantum Dots.

Published in:

Advanced Energy Materials, 2024, v. 14, n. 47, p. 1, doi. 10.1002/aenm.202402246

By:

Liu, Zheming;
Llusar, Jordi;
Karakkal, Hiba H.;
Zhu, Dongxu;
Ivanov, Yurii P.;
Prato, Mirko;
Divitini, Giorgio;
Brovelli, Sergio;
Infante, Ivan;
De Trizio, Luca;
Manna, Liberato

Publication type:

Article

Charge‐Selective, Narrow‐Gap Indium Arsenide Quantum Dot Layer for Highly Stable and Efficient Organic Photovoltaics.

Published in:

Advanced Energy Materials, 2022, v. 12, n. 24, p. 1, doi. 10.1002/aenm.202104018

By:

Park, Youngsang;
Bae, Sung Yong;
Kim, Taewan;
Park, Seongmin;
Oh, Jae Taek;
Shin, Daekwon;
Choi, Mahnmin;
Kim, Hyojung;
Kim, Bora;
Lee, Doh C.;
Song, Jung Hoon;
Choi, Hyosung;
Jeong, Sohee;
Kim, Younghoon

Publication type:

Article

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1484, doi. 10.1134/S1063782618110039

By:

Abramkin, D. S.;
Petrushkov, M. O.;
Putyato, M. A.;
Semyagin, B. R.;
Shamirzaev, T. S.

Publication type:

Article

Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1037, doi. 10.1134/S1063782618080146

By:

Mikhailova, M. P.;
Andreev, I. A.;
Konovalov, G. G.;
Danilov, L. V.;
Ivanov, E. V.;
Kunitsyna, E. V.;
Il’inskaya, N. D.;
Levin, R. V.;
Pushnyi, B. V.;
Yakovlev, Yu. P.

Publication type:

Article

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1129, doi. 10.1134/S1063782618090129

By:

Orlov, M. L.;
Volkova, N. S.;
Ivina, N. L.;
Orlov, L. K.

Publication type:

Article

Complex structure of optical transitions from the core d-levels of InAs and InSb crystals.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1034, doi. 10.1134/S1063782617080309

By:

Sobolev, V.;
Perevoshchikov, D.

Publication type:

Article

InAs QDs in a metamorphic InGaAs matrix, grown by MOCVD.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 672, doi. 10.1134/S1063782617050189

By:

Mintairov, S.;
Kalyuzhnyy, N.;
Maximov, M.;
Nadtochiy, A.;
Nevedomskiy, V.;
Zhukov, A.

Publication type:

Article

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells.

Published in:

Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109

By:

Krishtopenko, S.;
Ikonnikov, A.;
Maremyanin, K.;
Bovkun, L.;
Spirin, K.;
Kadykov, A.;
Marcinkiewicz, M.;
Ruffenach, S.;
Consejo, C.;
Teppe, F.;
Knap, W.;
Semyagin, B.;
Putyato, M.;
Emelyanov, E.;
Preobrazhenskii, V.;
Gavrilenko, V.

Publication type:

Article

Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1616, doi. 10.1134/S1063782615120210

By:

Spirin, K.;
Krishtopenko, S.;
Sadofyev, Yu.;
Drachenko, O.;
Helm, M.;
Teppe, F.;
Knap, W.;
Gavrilenko, V.

Publication type:

Article

Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1-2.0 mm.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1671, doi. 10.1134/S1063782615120027

By:

Andreev, I.;
Serebrennikova, O.;
Il'inskaya, N.;
Pivovarova, A.;
Konovalov, G.;
Kunitsyna, E.;
Sherstnev, V.;
Yakovlev, Yu.

Publication type:

Article