Works matching DE "BIPOLAR transistors"

Results: 549

Ccd-controlled in situ interferometry for dry etch process monitoring.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 117

By:

John, Wilfred;
Weixelbaum, Leonhard;
Witrich, Harald;
Wurfl, Joachim

Publication type:

Article

Effect of silicidation on silicon-based thin film resistors in SiGe integrated circuits.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 4, p. 354, doi. 10.1007/s10854-008-9733-y

By:

Sang-Heung Lee;
Seung-Yun Lee;
Chan Woo Park;
Dongwoo Suh

Publication type:

Article

Double-polysilicon self-aligned lateral bipolar transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y

By:

Pengpad, P.;
Bagnall, D. M.

Publication type:

Article

Measurement of DC and AC Response Curves of a Bipolar Transistor as a Function of Frequency.

Published in:

Measurement Techniques, 2019, v. 62, n. 8, p. 729, doi. 10.1007/s11018-019-01686-y

By:

Titkov, A. A.;
Khvalin, A. L.

Publication type:

Article

Modeling 2T937 Bipolar Transistors Based on Experimental Static and Frequency Characteristics.

Published in:

Measurement Techniques, 2018, v. 61, n. 8, p. 831, doi. 10.1007/s11018-018-1510-6

By:

Khvalin, A. L.

Publication type:

Article

The sensitivity mechanisms of a bipolar magnetotransistor. Part 2.

Published in:

Measurement Techniques, 2007, v. 50, n. 1, p. 78, doi. 10.1007/s11018-007-0027-1

By:

R. Tikhonov

Publication type:

Article

SnAgCu 高低温蠕变性能测试及功率模块钎料层疲劳行为仿真.

Published in:

Experimental Technology & Management, 2022, v. 39, n. 4, p. 90, doi. 10.16791/j.cnki.sjg.2022.04.018

By:

李玉坤;
孙斯杰;
黄小光

Publication type:

Article

分布式IGBT 整流器在汽车涂装电泳生产线中的应用.

Published in:

Electroplating & Finishing, 2022, v. 41, n. 14, p. 1014, doi. 10.19289/j.1004-227x.2022.14.010

By:

陈水平;
李飞;
卜洪涛;
付长宇;
刘洪涛;
刘斌;
刘杰

Publication type:

Article

Highly Flexible and Bright Electroluminescent Devices Based on Ag Nanowire Electrodes and Top‐Emission Structure.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600535

By:

Liang, Guojin;
Hu, Haibo;
Liao, Lei;
He, Yunbin;
Ye, Changhui

Publication type:

Article

Journal of Chongqing University of Posts & Telecommunications (Natural Science Edition) / Chongqing Youdian Daxue Xuebao (Ziran Kexue Ban), 2021, v. 33, n. 6, p. 955, doi. 10.3979/j.issn.1673-825X.202001080013

By:

苗乃丹;
王冠宇;
文剑豪;
于明道;
周春宇;
王巍

Publication type:

Article

Kronecker Product Based Modeling of Darlington Amplifier and State Estimation using Unscented Kalman Filter.

Published in:

International Journal of Electronics Letters, 2023, v. 11, n. 4, p. 411, doi. 10.1080/21681724.2022.2087916

By:

Gautam, Amit Kumar;
Majumdar, Sudipta

Publication type:

Article

Low voltage base current cancellation circuit.

Published in:

International Journal of Electronics Letters, 2020, v. 8, n. 4, p. 437, doi. 10.1080/21681724.2019.1636292

By:

Wadhwa, Sanjay Kumar;
Dixit, Ravi;
Gottapu, Anil Kumar

Publication type:

Article

Field-effect BJT: an adaptive and multifunctional nanoscale transistor.

Published in:

Applied Nanoscience, 2022, v. 12, n. 5, p. 1435, doi. 10.1007/s13204-021-02299-0

By:

Raissi, Farshid;
Amirmazlaghani, Mina;
Rajabi, Ali

Publication type:

Article

COMPUTATIONAL STUDY OF DIFFUSIVITIES IN DIAMOND Ge-Si ALLOYS.

Published in:

Journal of Mining & Metallurgy. Section B: Metallurgy, 2012, v. 48, n. 2, p. 227, doi. 10.2298/JMMB111102021C

By:

Cui, S. L.;
Zhang, L. J.;
Zhang, W. B.;
Du, Y.;
Xu, H. H.

Publication type:

Article

The modeling and simulation of thermal based modified solid oxide fuel cell (SOFC) for grid-connected systems.

Published in:

Acta Scientiarum: Technology, 2015, v. 37, n. 2, p. 211, doi. 10.4025/actascitechnol.v37i2.24941

By:

Gelen, Ayetül;
Yalcinoz, Tankut

Publication type:

Article

Characterization analysis and gate driver design for 1200 V 10 A SiC MOSFET.

Published in:

Modern Physics Letters B, 2018, v. 32, n. 34-36, p. N.PAG, doi. 10.1142/S0217984918400808

By:

Zhai, Mingjing;
Yang, Yuan;
Wen, Yang;
Yao, Wenqing;
Li, Yuan

Publication type:

Article

Chaotic dynamics in memristive circuits.

Published in:

Caderno Brasileiro de Ensino de Física, 2023, v. 45, p. 1, doi. 10.1590/1806-9126-RBEF-2023-0116

By:

Iarosz, Kelly C.;
Gabrick, Enrique C.;
Trobia, José;
Borges, Rafael R.;
Protachevicz, Paulo R.;
Bonetti, Robson C.;
de Souza, Silvio L. T.;
Batista, Gabriel L.;
Szezech Jr., José D.;
Caldas, Iberê L.;
Batista, Antonio M.

Publication type:

Article

Quick Methods for Reliable Component Testing.

Published in:

EE: Evaluation Engineering, 2011, v. 50, n. 3, p. 14

By:

Weller, Dennis

Publication type:

Article

PCI = Plug-In Carefree Interface.

Published in:

EE: Evaluation Engineering, 2005, v. 44, n. 3, p. 20

By:

Lecklider, Tom

Publication type:

Article

Simultaneous Unipolar and Bipolar Recording of Cardiac Electrical Activity.

Published in:

Pacing & Clinical Electrophysiology, 1992, v. 15, n. 1, p. 45, doi. 10.1111/j.1540-8159.1992.tb02900.x

By:

Sevaptsidis, Elias;
Massé, Stéphane;
Parson, Ian D.;
Downar, Eugene;
Kimber, Shane

Publication type:

Article

Spin Transistors vs. Conventional Transistors: What Are the Benefits?

Published in:

Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 61, doi. 10.1007/s10948-009-0537-y

By:

Pelá, R. R.;
Teles, L. K.

Publication type:

Article

20 GHz High Performance VCO Design Methodology.

Published in:

Engineering Letters, 2008, v. 16, n. 1, p. 44

By:

Verdier, Jacquez;
Núñez Pérez, José Cruz;
Gontrand, Christian

Publication type:

Article

Doping Concentrations Analysis on The Performance of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP).

Published in:

International Journal of Simulation: Systems, Science & Technology, 2014, v. 15, n. 2, p. 24, doi. 10.5013/IJSSST.a.15.02.04

By:

Mohd Ismail Saad;
Zuhir, H.;
Bun Seng, C.;
Khairul, A. M.;
Ghosh, Bablu;
Bolong, N.;
Ismail, Razali

Publication type:

Article

An empirical HBT large-signal model for CAD.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2003, v. 13, n. 6, p. 518, doi. 10.1002/mmce.10110

By:

Angelov, I.;
Choumei, K.;
Inoue, A.

Publication type:

Article

Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2002, v. 12, n. 4, p. 311, doi. 10.1002/mmce.10001

By:

Ooi, B. L.;
Zhou, T. S.;
Kooi, P. S.

Publication type:

Article

Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs).

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2000, v. 10, n. 1, p. 33, doi. 10.1002/(SICI)1099-047X(200001)10:1<33::AID-MMCE5>3.0.CO;2-D

By:

Schultheis, R.;
Bovolon, N.;
Müller, J. E.;
Zwicknagl, P.

Publication type:

Article

An analytic method of microwave bipolar single-frequency and voltage-controlled oscillator design.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 1999, v. 9, n. 5, p. 403, doi. 10.1002/(SICI)1099-047X(199909)9:5<403::AID-MMCE5>3.0.CO;2-#

By:

Grebennikov, Andrey V.

Publication type:

Article

A dual mode wideband bipolar microwave transistor voltage-controlled oscillator design.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 1999, v. 9, n. 5, p. 424, doi. 10.1002/(SICI)1099-047X(199909)9:5<424::AID-MMCE7>3.0.CO;2-N

By:

Grebennikov, Andrey V.

Publication type:

Article

BRIEF INTRODUCTION TO MODULAR MULTILEVEL CONVERTERS AND RELATIVE CONCEPTS AND FUNCTIONALITIES.

Published in:

i-Manager's Journal on Digital Signal Processing, 2018, v. 6, n. 1, p. 33, doi. 10.26634/jdp.6.1.15157

By:

PURKAIT, SONAL;
PANDEY, RAHUL

Publication type:

Article

A Second-Order Stabilized Control Volume Finite Element Method for Self-Heating Effects Simulation of Semiconductor Devices based on Triangular Elements.

Published in:

Applied Computational Electromagnetics Society Journal, 2021, v. 36, n. 5, p. 513, doi. 10.47037/2020.ACES.J.360504

By:

Da-Miao Yu;
Xiao-Min Pan;
Xin-Qing Sheng

Publication type:

Article

A configurable analog integrated circuit with programmable parameters.

Published in:

Instruments & Experimental Techniques, 2016, v. 59, n. 4, p. 539, doi. 10.1134/S0020441216030143

By:

Dvornikov, O.;
Chekhovskii, V.;
Dyatlov, V.;
Prokopenko, N.

Publication type:

Article

Transient processes in high-voltage switches based on series-connected insulated-gap bipolar transistors.

Published in:

Instruments & Experimental Techniques, 2016, v. 59, n. 2, p. 222, doi. 10.1134/S0020441216020081

By:

Malashin, M.;
Moshkunov, S.;
Khomich, V.

Publication type:

Article

Investigation of the operation of a bipolar transistor in the mode of a nanosecond opening switch.

Published in:

Instruments & Experimental Techniques, 2016, v. 59, n. 1, p. 82, doi. 10.1134/S002044121601022X

By:

Grekhov, I.;
Rozhkov, A.

Publication type:

Article

A four-channel source of high-power pulses of ultrawideband radiation.

Published in:

Instruments & Experimental Techniques, 2013, v. 56, n. 3, p. 302, doi. 10.1134/S0020441213030020

By:

Efremov, A.;
Koshelev, V.;
Kovalchuk, B.;
Plisko, V.

Publication type:

Article

Generators of high-voltage pulses with a repetition rate of 50000 pulses per second.

Published in:

Instruments & Experimental Techniques, 2011, v. 54, n. 4, p. 533, doi. 10.1134/S0020441211030225

By:

Boyko, N.;
Bortsov, A.;
Evdoshenko, L.;
Ivanov, V.

Publication type:

Article

A silicon position-sensitive detector of charged particles and radiations on the basis of functionally integrated structures with nano-micron active regions.

Published in:

Instruments & Experimental Techniques, 2010, v. 53, n. 5, p. 657, doi. 10.1134/S0020441210050076

By:

Murashev, V. N.;
Legotin, S. A.;
Orlov, O. M.;
Korol'chenko, A. S.;
Ivshin, P. A.

Publication type:

Article

A new position-sensitive silicon pixel detector based on bipolar transistors.

Published in:

Instruments & Experimental Techniques, 2009, v. 52, n. 5, p. 655, doi. 10.1134/S0020441209050042

By:

Volkov, D.;
Karmanov, D.;
Murashev, V.;
Legotin, S.;
Mukhamedshin, R.;
Chubenko, A.

Publication type:

Article

Transistor Avalanche Non-Coherent Pulse Generator.

Published in:

Journal of Microwaves, Optoelectronics & Electromagnetic Applications, 2020, v. 19, n. 2, p. 242, doi. 10.1590/2179-10742020v19i2836

By:

Perotoni, Marcelo B.;
Silva, Samuel N. N.;
da Silva, L. A.;
de Oliveira, Alexandre M.

Publication type:

Article

INCREASING THE SENSITIVITY OF MEASUREMENT OF A MOISTURE CONTENT IN CRUDE OIL.

Published in:

Scientific Bulletin of National Mining University, 2021, n. 5, p. 49, doi. 10.33271/nvngu/2021-5/049

By:

Osadchuk, O. V.;
Semenov, A. O.;
Zviahin, O. S.;
Semenova, O. O.;
Rudyk, A. V.

Publication type:

Article

Output Stages of Operational Amplifiers Based on Gallium Arsenide NJFET and Bipolar PNP Transistors.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2023, v. 16, n. 2, p. 25

By:

A. A., Zhuk;
N. N., Prokopenko;
V. E., Chumakov;
A. V., Kunts

Publication type:

Article

Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24

By:

Chumakov V. E.;
Serebryakov A. I.;
Titov A. E.;
Prokopenko N. N.

Publication type:

Article

Investigating semiconductor device characterization in educational labs.

Published in:

International Journal of Electrical Engineering Education, 2021, v. 58, n. 2, p. 319, doi. 10.1177/0020720918825244

By:

Nethra Devi, T;
Raghuram, TR

Publication type:

Article

Rules for determining the state of a bipolar junction transistor.

Published in:

International Journal of Electrical Engineering Education, 2011, v. 48, n. 1, p. 104, doi. 10.7227/IJEEE.48.1.9

By:

Cassara, Frank A.

Publication type:

Article

The common-mode rejection ratio of a long-tailed pair.

Published in:

International Journal of Electrical Engineering Education, 2003, v. 40, n. 1, p. 91

By:

Hart, Bryan

Publication type:

Article

A simple formulation of the saturation current density in heavily doped emitters.

Published in:

Canadian Journal of Physics, 2003, v. 81, n. 9, p. 1109, doi. 10.1139/p03-053

By:

Zouari, Abdelaziz;
Arab, Adel Ben

Publication type:

Article

Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling.

Published in:

Semiconductors, 2020, v. 54, n. 2, p. 258, doi. 10.1134/S1063782620020153

By:

Lebedeva, N. M.;
Il'inskaya, N. D.;
Ivanov, P. A.

Publication type:

Article

Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1353, doi. 10.1134/S1063782619100178

By:

Shobolova, T. A.;
Korotkov, A. V.;
Petryakova, E. V.;
Lipatnikov, A. V.;
Puzanov, A. S.;
Obolensky, S. V.;
Kozlov, V. A.

Publication type:

Article

Transient switch-off of a 4 H-SiC bipolar transistor from the deep-saturation mode.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1194, doi. 10.1134/S1063782617090238

By:

Yuferev, V.;
Levinshtein, M.;
Ivanov, P.;
Zhang, Jon;
Palmour, John

Publication type:

Article

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1678, doi. 10.1134/S1063782616120162

By:

Puzanov, A.;
Obolenskiy, S.;
Kozlov, V.

Publication type:

Article

Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 69, doi. 10.1134/S1063782615010224

By:

Puzanov, A.;
Obolenskii, S.;
Kozlov, V.

Publication type:

Article