Works matching DE "TUNNEL field-effect transistors"

Results: 276

Design and Performance Analysis of TFET with Extended-Dual-Source Structure-Based Label-Free Biosensor.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 4114, doi. 10.1007/s11664-025-11816-8

By:

Ghosh, P.;
Pratap, S.;
Vanlalawmpuia, K.

Publication type:

Article

Design and Performance Evaluation of a Heterojunction GaAs/GaSb PC-TFET for Label-Free Biosensing Applications: Design and Performance Evaluation...: M. K. Bind et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 1691, doi. 10.1007/s11664-024-11643-3

By:

Bind, Mukesh Kumar;
Singh, Sajai Vir;
Nigam, Kaushal Kumar

Publication type:

Article

Insight on Work-Function and Gate Oxide-Engineered Negative-Capacitance TFET for Enhanced Analog/RF Performance and DC Characteristics in High-Frequency Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8126, doi. 10.1007/s11664-024-11519-6

By:

Sachan, Rajeev Kumar;
Vedvrat;
Gupta, Vidyadhar;
Bajpai, Shrish

Publication type:

Article

Correction: Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor.

Published in:

2024

By:

Saravanan, M.;
Parthasarathy, Eswaran

Publication type:

Correction Notice

Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5468, doi. 10.1007/s11664-024-11261-z

By:

Verma, Shubham;
Rai, Manish Kumar;
Yadav, Vimal Kumar Singh;
Rai, Sanjeev

Publication type:

Article

Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3901, doi. 10.1007/s11664-024-11109-6

By:

Kaur, Arashpreet;
Saini, Gaurav

Publication type:

Article

Analysis of Negative Capacitance Source Pocket Double-Gate TFET with Steep Subthreshold and High ON–OFF Ratio.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3861, doi. 10.1007/s11664-024-11102-z

By:

Babu, K. Murali Chandra;
Goel, Ekta

Publication type:

Article

Investigation of a Dual-Drain Technique on a Nanowire Tunnel Field-Effect Transistor for Bio-sensitivity Enhancement.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3028, doi. 10.1007/s11664-024-11010-2

By:

Raman, Ashish;
Kumar Arya, Susheel;
Kumar, Prateek;
Ranjan, Ravi

Publication type:

Article

Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET).

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2999, doi. 10.1007/s11664-024-10997-y

By:

Singh, Omendra Kr;
Dhandapani, Vaithiyanathan;
Kaur, Baljit

Publication type:

Article

Graphene antidot nanoribbon tunnel field‐effect transistor.

Published in:: Micro & Nano Letters (Wiley-Blackwell), 2022, v. 17, n. 8, p. 169, doi. 10.1049/mna2.12107
Publication type:: Article

TCAD simulation of a double L-shaped gate tunnel field-effect transistor with a covered source-channel.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 4, p. 272, doi. 10.1049/mnl.2019.0398

By:

Haiwu Xie;
Hongxia Liu;
Tao Han;
Wei Li;
Shupeng Chen;
Shulong Wang

Publication type:

Article

Analysis of kink reduction and reliability issues in low-voltage DTD-based SOI TFET.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 3, p. 130, doi. 10.1049/mnl.2019.0427

By:

Ghosh, Puja;
Bhowmick, Brinda

Publication type:

Article

Effect of ITCs on gate stacked JL-TFET based on work-function engineering.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 12, p. 1238, doi. 10.1049/mnl.2019.0252

By:

Bhardwaj, Eshaan;
Nigam, Kaushal;
Choubey, Shubham;
Chaturvedi, Savitesh

Publication type:

Article

Analysis of interface trap charges on performance variation in L-shaped tunnel field-effect transistor.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 11, p. 1140, doi. 10.1049/mnl.2019.0129

By:

Jia-Min Guo;
Cong Li;
Zhi-Rui Yan;
Hao-Feng Jiang;
Yi-Qi Zhuang

Publication type:

Article

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201015

By:

Woo, Gunhoo;
Kim, Taesung;
Yoo, Hocheon

Publication type:

Article

Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n+‐Source for 2D Tunnel FETs.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100292

By:

Sato, Yuichiro;
Nishimura, Tomonori;
Duanfei, Dong;
Ueno, Keiji;
Shinokita, Keisuke;
Matsuda, Kazunari;
Nagashio, Kosuke

Publication type:

Article

InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000291

By:

Bi, Jiahe;
Zou, Xuming;
Lv, Yawei;
Li, Guoli;
Liu, Xingqiang;
Liu, Yuan;
Yu, Ting;
Yang, Zhenyu;
Liao, Lei

Publication type:

Article

Low‐Power Computing: Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric (Adv. Electron. Mater. 7/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070030

By:

Jeon, Hyun Bae;
Shin, Gwang Hyuk;
Lee, Khang June;
Choi, Sung‐Yool

Publication type:

Article

n‐Type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000258

By:

Xiao, Mengmeng;
Lin, Yanxia;
Xu, Lin;
Deng, Bing;
Peng, Hailin;
Peng, Lian‐Mao;
Zhang, Zhiyong

Publication type:

Article

Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000091

By:

Jeon, Hyun Bae;
Shin, Gwang Hyuk;
Lee, Khang June;
Choi, Sung‐Yool

Publication type:

Article

High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800865

By:

Wang, Yiru;
Yang, Youbin;
Ding, Ping;
Wei, Qi;
Gao, Xu;
Wang, Suidong;
Liu, Chang;
Li, Aidong;
Yin, Jiang;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

Harnessing defects for high-performance MoS2 tunneling field-effect transistors.

Published in:

Materials Research Letters, 2023, v. 11, n. 4, p. 266, doi. 10.1080/21663831.2022.2145921

By:

Lyu, Juan;
Gong, Jian;
Li, HuangLong

Publication type:

Article

Electrostatically Doped Schottky barrier tunnel field effect transistor.

Published in:

International Journal of Electronics Letters, 2022, v. 10, n. 3, p. 333, doi. 10.1080/21681724.2021.1941282

By:

Kumar, Harendra;
Singh, Sangeeta;
Priyadarshani, Kumari Nibha

Publication type:

Article

Performance investigation of Ge DLTFET based digital integrated circuit.

Published in:

International Journal of Electronics Letters, 2023, v. 11, n. 3, p. 339, doi. 10.1080/21681724.2022.2087914

By:

Kumar, Prashant;
Panchore, Meena;
Raikwal, Pushpa;
Cecil, Kanchan

Publication type:

Article

Heterojunction tunnel field-effect transistor suitable for high-speed low-power applications.

Published in:

Applied Nanoscience, 2023, v. 13, n. 3, p. 2481, doi. 10.1007/s13204-022-02358-0

By:

Kumar, Chinnala Pavan;
Sivani, K.

Publication type:

Article

A subthermionic tunnel field-effect transistor with an atomically thin channel.

Published in:

Nature, 2015, v. 526, n. 7571, p. 91, doi. 10.1038/nature15387

By:

Sarkar, Deblina;
Xie, Xuejun;
Liu, Wei;
Cao, Wei;
Kang, Jiahao;
Gong, Yongji;
Kraemer, Stephan;
Ajayan, Pulickel M.;
Banerjee, Kaustav

Publication type:

Article

Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor With Enhanced Band to Band Tunneling Current.

Published in:

Journal of Applied Research in Electrical Engineering, 2023, v. 2, n. 2, p. 206, doi. 10.22055/jaree.2024.44844.1082

By:

Ahangari, Zahra

Publication type:

Article

Compact Capacitance Model of L-Shape Tunnel Field-Effect Transistors for Circuit Simulation.

Published in:

Journal of Information & Communication Convergence Engineering, 2021, v. 19, n. 4, p. 263, doi. 10.6109/jicce.2021.19.4.263

By:

Yun Seop Yu;
Najam, Faraz

Publication type:

Article

터널링 전계효과 트랜지스터로 구성된 3차원 적층형 집적회로에 대한 연구.

Published in:

Journal of the Korea Institute of Information & Communication Engineering, 2022, v. 26, n. 5, p. 682, doi. 10.6109/jkiice.2022.26.5.682

By:

유윤섭

Publication type:

Article

A Systematic Investigation of Dual Material Gate TFET for Improved Performance.

Published in:

Indian Journal of Pure & Applied Physics, 2024, v. 62, n. 3, p. 229, doi. 10.56042/ijpap.v62i3.5888

By:

Prasad, Miriyala Durga;
Saini, Gaurav

Publication type:

Article

Dirac-source diode with sub-unity ideality factor.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-31849-5

By:

Myeong, Gyuho;
Shin, Wongil;
Sung, Kyunghwan;
Kim, Seungho;
Lim, Hongsik;
Kim, Boram;
Jin, Taehyeok;
Park, Jihoon;
Lee, Taehun;
Fuhrer, Michael S.;
Watanabe, Kenji;
Taniguchi, Takashi;
Liu, Fei;
Cho, Sungjae

Publication type:

Article

Analytical Drain Current Modeling and Simulation of Triple Material Gate-All-Around Heterojunction TFETs Considering Depletion Regions.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1634, doi. 10.1134/S1063782620120398

By:

Usha, C.;
Vimala, P.

Publication type:

Article

Impact of Noise and Interface Trap Charge on a Heterojunction Dual-Gate Vertical TFET Device.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2181, doi. 10.1007/s11664-024-10927-y

By:

Nasani, Karthik;
Bhowmick, Brinda;
Pukhrambam, Puspa Devi

Publication type:

Article

An Improved Z-Shaped Dual-Material-Gate DM-SDZ-TFET Biosensor for Label-Free Detection.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 3, p. 1445, doi. 10.1007/s11664-023-10887-9

By:

Bitra, Jayalakshmi;
Komanapalli, Gurumurthy

Publication type:

Article

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 3, p. 1142, doi. 10.1007/s11664-023-10852-6

By:

Pathak, Priyam;
Deb, Deepjyoti;
Nath, Dwipayan;
Das, Prachuryya Subash;
Choudhury, Hirakjyoti;
Goswami, Rupam

Publication type:

Article

Analysis of the Impact of Interface Trap Charges on the Analog/RF Performance of a Graphene Nanoribbon Vertical Tunnel FET.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 10, p. 6825, doi. 10.1007/s11664-023-10615-3

By:

Liana, Zohming;
Choudhuri, Bijit;
Bhowmick, Brinda

Publication type:

Article

Impact of Temperature on the Reliability of UTB-DG-FE-TFETs and Their RF/Analog and Linearity Parameter Dependence.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 9, p. 6293, doi. 10.1007/s11664-023-10556-x

By:

Gopal, Girdhar;
Varma, Tarun

Publication type:

Article

An Extended-Source Tunneling-FET with Gate-Overlapped n+-Doped Pocket.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 9, p. 5980, doi. 10.1007/s11664-023-10524-5

By:

Meshkin, Reza

Publication type:

Article

Comparative Investigation of Different Doping Techniques in TMD Tunnel FET for Subdeca Nanometer Technology Nodes.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5327, doi. 10.1007/s11664-023-10505-8

By:

Singh, Niraj Kumar;
Sahoo, Manodipan

Publication type:

Article

Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2772, doi. 10.1007/s11664-023-10239-7

By:

Saravanan, M.;
Parthasarathy, Eswaran

Publication type:

Article

OFF Current Reduction in Negative Capacitance Heterojunction TFET.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2695, doi. 10.1007/s11664-023-10232-0

By:

Shikha, U. S.;
Krishna, Bhavani;
Harikumar, Hridya;
Jacob, Jobymol;
Pradeep, Anju;
James, Rekha K.

Publication type:

Article

Design and Qualitative Analysis of 5-nm Nanowire TFET with Spacer Engineering.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 3, p. 2094, doi. 10.1007/s11664-022-10182-z

By:

Vishnupriyan, J.;
ChayaDevi, S. K.;
Megala, V.;
Karpagam, R.

Publication type:

Article

Optical Performance of Split-Source Z-Shaped Horizontal-Pocket and Hetero-Stacked TFET-Based Photosensors.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 3, p. 1888, doi. 10.1007/s11664-022-10140-9

By:

Tiwari, Shreyas;
Saha, Rajesh

Publication type:

Article

Performance Investigation of Source Delta-Doped Vertical Nanowire TFET.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5655, doi. 10.1007/s11664-022-09840-z

By:

Raman, Ashish;
Kumar, Karnatakam Jaswanth;
Kakkar, Deepti;
Ranjan, Ravi;
Kumar, Naveen

Publication type:

Article

Design and Performance Optimization of Dopingless Vertical Nanowire TFET Using Gate Stacking Technique.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 7, p. 4005, doi. 10.1007/s11664-022-09658-9

By:

Bhardwaj, Anjana;
Kumar, Pradeep;
Raj, Balwinder;
Anand, Sunny

Publication type:

Article

InSb/Si Heterojunction-Based Tunnelling Field-Effect Transistor with Enhanced Drive Current and Steep Switching.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 2, p. 704, doi. 10.1007/s11664-021-09325-5

By:

Swain, Sukanta Kumar;
Malviya, Nishit;
Singh, Sangeeta;
Sharma, Shashi Kant

Publication type:

Article

Investigation of ON Current and Subthreshold Swing of an InSb/Si Heterojunction Stacked Oxide Double-Gate TFET with Graphene Nanoribbon.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 12, p. 7037, doi. 10.1007/s11664-021-09244-5

By:

Samuel, T. S. Arun;
Venkatesh, M.;
Pandian, M. Karthigai;
Vimala, P.

Publication type:

Article

Model for Predicting the Threshold Voltage of Tunnel Field-Effect Transistors Using Linear Regression.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 11, p. 6015, doi. 10.1007/s11664-021-09189-9

By:

Kumar, Vikas;
Parida, Manoj Kumar;
Goswami, Rupam;
Deb, Deepjyoti

Publication type:

Article

Charge Plasma-Based Phosphorene Tunnel FET Using a Hybrid Computational Method.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3624, doi. 10.1007/s11664-021-08882-z

By:

Pon, Adhithan;
Bhattacharyya, A.;
Ramesh, R.

Publication type:

Article

Back-Gated MoTe2 Based 1T-AND Gate Using Non-equilibrium Green's Function: Design and Investigation.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3422, doi. 10.1007/s11664-021-08820-z

By:

Kumar, Prateek;
Gupta, Maneesha;
Singh, Kunwar;
Kumar, Naveen

Publication type:

Article