Works matching DE "SEMICONDUCTOR devices"

Results: 1353

Growth of gallium oxide bulk crystals: a review.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 231, doi. 10.1140/epjs/s11734-025-01486-2

By:

Huang, Lin;
Tang, Huili;
Zhang, Chaoyi;
Sun, Peng;
Fang, Qiancheng;
Wu, Feng;
Luo, Ping;
Liu, Bo;
Xu, Jun

Publication type:

Article

Progress in first-principles studies on doped semiconductor diamond.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 385, doi. 10.1140/epjs/s11734-024-01458-y

By:

Wang, Zhen;
Jin, Peng;
Qu, Pengfei;
Cao, Fanqiu;
Han, Xu;
Wang, Zhanguo

Publication type:

Article

Enhancing DM Junctionless Tree-FET Performance Through Spacer Optimization: A Comprehensive DC and RF Analysis.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 4, p. 3035, doi. 10.1007/s11664-025-11761-6

By:

Beebireddy, Divya;
Fatima, Kaleem;
Devi, L. Nirmala

Publication type:

Article

The modulation of the TiAlSiN coating on the band gap of monolayer MoS2.

Published in:

Surface Engineering, 2021, v. 37, n. 4, p. 505, doi. 10.1080/02670844.2020.1790169

By:

Wang, R.;
Jin, K.;
Liu, D. M.;
Su, K.

Publication type:

Article

Isomers of B←N‐Fused Dibenzo‐azaacenes: How B←N Affects Opto‐electronic Properties and Device Behaviors?

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 13, p. 4364, doi. 10.1002/chem.202004615

By:

Min, Yang;
Dou, Chuandong;
Tian, Hongkun;
Liu, Jun;
Wang, Lixiang

Publication type:

Article

Frontispiece: Flexible Metal Oxide Semiconductor Devices Made by Solution Methods.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 42, p. 1, doi. 10.1002/chem.202084265

By:

Jo, Jeong‐Wan;
Kang, Seung‐Han;
Heo, Jae Sang;
Kim, Yong‐Hoon;
Park, Sung Kyu

Publication type:

Article

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 42, p. 9126, doi. 10.1002/chem.202000090

By:

Jo, Jeong‐Wan;
Kang, Seung‐Han;
Heo, Jae Sang;
Kim, Yong‐Hoon;
Park, Sung Kyu

Publication type:

Article

The Formation Mechanism of Binary Semiconductor Nanomaterials: Shared by Single-Source and Dual-Source Precursor Approaches.

Published in:

Angewandte Chemie, 2013, v. 125, n. 42, p. 11240, doi. 10.1002/ange.201304958

By:

Yu, Kui;
Liu, Xiangyang;
Zeng, Qun;
Yang, Mingli;
Ouyang, Jianying;
Wang, Xinqin;
Tao, Ye

Publication type:

Article

Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10031, doi. 10.1007/s10854-019-01366-1

By:

Rabie, Mohamed A.;
Mirza, Souzan;
Hu, Yujie;
Haddara, Yaser M.

Publication type:

Article

Printed wire interconnection using Ag sinter paste for wide band gap power semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 17, p. 15223, doi. 10.1007/s10854-018-9664-1

By:

Noh, Seungjun;
Choe, Chanyang;
Chen, Chuantong;
Zhang, Hao;
Suganuma, Katsuaki

Publication type:

Article

Solid porous Ag-Ag interface bonding and its application in the die-attached modules.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 15, p. 13418, doi. 10.1007/s10854-018-9467-4

By:

Chen, Chuantong;
Suganuma, Katsuaki

Publication type:

Article

Sputtering power dependence of structure and photoluminescence of ZnO on 6H-SiC.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17881, doi. 10.1007/s10854-017-7729-1

By:

Li, Qi;
Fu, Sulei;
Song, Cheng;
Wang, Guangyue;
Zeng, Fei;
Pan, Feng

Publication type:

Article

Current-voltage characteristics of Au/ZnO/n-Si device in a wide range temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 22, p. 17177, doi. 10.1007/s10854-017-7646-3

By:

Kocyigit, A.;
Orak, I.;
Çaldıran, Z.;
Turut, A.

Publication type:

Article

Fabrication and study of optical properties on CdS semiconductor as buffer layer for Cu(In,Ga)Se thin film solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10173, doi. 10.1007/s10854-017-6781-1

By:

Esmaeili-Zare, Mahdiyeh;
Behpour, Mohsen

Publication type:

Article

The effect of infrared plasmon on the performance of Si-based THz detectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 839, doi. 10.1007/s10854-016-5598-7

By:

Zhu, He;
Xu, Jintao;
Zhu, Jiaqi;
Wang, Miao;
Wu, Huizhen;
Li, Ning;
Dai, Ning

Publication type:

Article

Ag nanoparticle catalyst based on GaO/GaAs semiconductor nanowire growth by VLS method.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 11, p. 8747, doi. 10.1007/s10854-015-3552-8

By:

Nguyen, Tien Dai;
Kim, Eui Tae;
Dao, Khac An

Publication type:

Article

Evolutions of bonding wires used in semiconductor electronics: perspective over 25 years.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4412, doi. 10.1007/s10854-015-2892-8

By:

Gan, Chong;
Hashim, U.

Publication type:

Article

Failure analysis of EOS-induced damage at final electrical testing.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 596, doi. 10.1007/s10854-013-1521-7

By:

Chen, Ming-Kun;
Huang, Yu-Jung;
Cheng, Chi-Chan;
Lin, Yi-Lung;
Fu, Shen-Li

Publication type:

Article

A Finite Volume Element Scheme Modified With Second‐Order Upwind Fractional Step of Three‐Dimensional Semiconductor Device Transient Behavior and Its Convergence Analysis.

Published in:

Numerical Methods for Partial Differential Equations, 2025, v. 41, n. 1, p. 1, doi. 10.1002/num.23157

By:

Li, Changfeng;
Yuan, Yirang;
Yang, Qing;
Sun, Tongjun

Publication type:

Article

Sparse identification modeling and predictive control of wafer temperature in an atomic layer etching reactor.

Published in:

Chemical Engineering Research & Design: Transactions of the Institution of Chemical Engineers Part A, 2024, v. 202, p. 1, doi. 10.1016/j.cherd.2023.12.024

By:

Ou, Feiyang;
Abdullah, Fahim;
Wang, Henrik;
Tom, Matthew;
Orkoulas, Gerassimos;
Christofides, Panagiotis D.

Publication type:

Article

A comparison of formulations and non-linear solvers for computational modelling of semiconductor devices.

Published in:

Computational Mechanics, 2025, v. 75, n. 5, p. 1533, doi. 10.1007/s00466-024-02578-x

By:

Pérez-Escudero, Sergi;
Codony, David;
Arias, Irene;
Fernández-Méndez, Sonia

Publication type:

Article

Estimate of Errors in the Determination of Parameters of Linear Thermal Circuits of Semiconductor Devices Based on the Frequency Dependence of the Thermal Impedance.

Published in:

Measurement Techniques, 2016, v. 59, n. 8, p. 850, doi. 10.1007/s11018-016-1056-4

By:

Sergeev, V.;
Frolov, I.

Publication type:

Article

Measurement of the Parameters of On-Wafer Semiconductor Devices.

Published in:

Measurement Techniques, 2016, v. 59, n. 7, p. 765, doi. 10.1007/s11018-016-1044-8

By:

Savin, A.;
Guba, V.;
Bykova, O.

Publication type:

Article

Structural Stability of Vacancy and Substitutional Defects in g-GaN: A First-Principles Study.

Published in:

Trends in Sciences, 2024, v. 21, n. 12, p. 1, doi. 10.48048/tis.2024.8592

By:

Fadlliyana, Malika;
Fajariah, Nurul;
Nurwantoro, Pekik;
Prayogi, Harmon;
Purnawati, Diki;
Oktavina, Cristina Wulan;
Nugraheni, Ari Dwi;
Sholihun, Sholihun

Publication type:

Article

Formation of 'negative' silicon whiskers.

Published in:

Inorganic Materials, 2017, v. 53, n. 8, p. 775, doi. 10.1134/S002016851708012X

By:

Nebol'sin, V.;
Dunaev, A.;
Vorob'ev, A.;
Samofalova, A.;
Zenin, V.

Publication type:

Article

Nanocrystalline tin dioxide: Basics in relation with gas sensing phenomena part II. Active centers and sensor behavior.

Published in:

Inorganic Materials, 2016, v. 52, n. 13, p. 1311, doi. 10.1134/S0020168516130045

By:

Marikutsa, A.;
Rumyantseva, M.;
Gaskov, A.;
Samoylov, A.

Publication type:

Article

Radiation-Induced Effects on Semiconductor Devices: A Brief Review on Single-Event Effects, Their Dynamics, and Reliability Impacts.

Published in:

Chips, 2025, v. 4, n. 1, p. 12, doi. 10.3390/chips4010012

By:

Aguiar, Vitor A. P.;
Alberton, Saulo G.;
Pereira, Matheus S.

Publication type:

Article

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials.

Published in:

Chips, 2024, v. 3, n. 4, p. 271, doi. 10.3390/chips3040014

By:

Pan, Jiong;
Wang, Zeda;
Zhao, Bingchen;
Yin, Jiaju;
Guo, Pengwen;
Yang, Yi;
Ren, Tian-Ling

Publication type:

Article

Au‐TiO2‐ZnO sandwich‐structured composite films with enhanced ultraviolet‐light photocatalytic activity.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2021, v. 16, n. 12, p. 601, doi. 10.1049/mna2.12088

By:

Jian, Aoqun;
Li, Wanghao;
Wang, Meiling;
Jia, Huaping;
Sang, Shengbo

Publication type:

Article

新能源车电机驱动系统的 EMI 协同分析.

Published in:

Electronic Science & Technology, 2023, v. 36, n. 10, p. 24, doi. 10.16180/j.cnki.issn1007-7820.2023.10.004

By:

徐至江;
谭康伯;
李敏;
赵子文;
陈同山

Publication type:

Article

Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00566-0

By:

Völkel, Lukas;
Ahmad, Rana Walied;
Bestaeva, Alana;
Braun, Dennis;
Cruces, Sofia;
Lee, Jimin;
Pasko, Sergej;
Krotkus, Simonas;
Heuken, Michael;
Menzel, Stephan;
Lemme, Max C.

Publication type:

Article

Gating monolayer and bilayer graphene with a two-dimensional semiconductor.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00551-7

By:

Sterbentz, Randy M.;
Kim, Bogyeom;
Flores-Garibay, Anayeli;
Haley, Kristine L.;
Pereira, Nicholas T.;
Watanabe, Kenji;
Taniguchi, Takashi;
Island, Joshua O.

Publication type:

Article

Effect of project-based learning method for improving students problem-solving ability in the experiment of power electronics course.

Published in:

Journal of Engineering Education Transformations, 2024, v. 37, p. 105, doi. 10.16920/jeet/2024/v37is2/24029

By:

Aishwarya M.;
N. S., Sri Roophika;
S., Julius Fusic;
Ramesh H.

Publication type:

Article

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193

By:

Chai, Jixing;
Liu, Qianhu;
Chen, Liang;
Cao, Ben;
Kong, Deqi;
Lin, Tingjun;
Wang, Wenliang;
Li, Guoqiang

Publication type:

Article

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056

By:

Shu, Yu;
Liu, Yongqian;
Cui, Zhou;
Xiong, Rui;
Zhang, Yinggan;
Xu, Chao;
Zheng, Jingying;
Wen, Cuilian;
Wu, Bo;
Sa, Baisheng

Publication type:

Article

Operation Mechanism of n‐Type Organic Electronic Metabolite Sensors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200065

By:

Druet, Victor;
Nayak, Prem D.;
Koklu, Anil;
Ohayon, David;
Hama, Adel;
Chen, Xingxing;
Moser, Maximilian;
McCulloch, Iain;
Inal, Sahika

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200238

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200148

By:

Guo, Jing;
Liu, Yu;
Chen, Ping‐An;
Qiu, Xincan;
Wei, Huan;
Xia, Jiangnan;
Chen, Huajie;
Zeng, Zebing;
Liao, Lei;
Hu, Yuanyuan

Publication type:

Article

Properties and Applications of Copper(I) Thiocyanate Hole‐Transport Interlayers Processed from Different Solvents.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101253

By:

Wang, Bingjun;
Nam, Sungho;
Limbu, Saurav;
Kim, Ji‐Seon;
Riede, Moritz;
Bradley, Donal D. C.

Publication type:

Article

On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100788

By:

García‐Hemme, Eric;
Caudevilla, Daniel;
Algaidy, Sari;
Pérez‐Zenteno, Francisco;
García‐Hernansanz, Rodrigo;
Olea, Javier;
Pastor, David;
del Prado, Álvaro;
San Andrés, Enrique;
Mártil, Ignacio;
González‐Díaz, Germán

Publication type:

Article

A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100543

By:

Wu, Fan;
Ren, Jie;
Yang, Yi;
Yan, Zhaoyi;
Tian, He;
Gou, Guangyang;
Wang, Xuefeng;
Zhang, Zijian;
Yang, Xin;
Wu, Xing;
Ren, Tian‐Ling

Publication type:

Article

Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100449

By:

Choi, Min Sup;
Lee, Myeongjin;
Ngo, Tien Dat;
Hone, James;
Yoo, Won Jong

Publication type:

Article

Investigation of the Determining Factors for the "Mobility Boost" in High‐k‐Gated Transparent Oxide Semiconductor Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001037

By:

Sun, Yuhang;
Kim, Junkyu;
Chatterjee, Neel;
Swisher, Sarah L.

Publication type:

Article

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001212

By:

Ngo, Tien Dat;
Yang, Zheng;
Lee, Myeongjin;
Ali, Fida;
Moon, Inyong;
Kim, Dong Gyu;
Taniguchi, Takashi;
Watanabe, Kenji;
Lee, Kang‐Yoon;
Yoo, Won Jong

Publication type:

Article

Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000973

By:

Tarsoly, Gergely;
Choi, Youngill;
You, Young Gyu;
Jhang, Sung Ho;
Pyo, Seungmoon

Publication type:

Article

Impacts of Minority Charge Carrier Injection on the Negative Capacitance, Steady‐State Current, and Transient Current of a Single‐Layer Organic Semiconductor Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000622

By:

Moon, Chang‐Ki;
Choi, Ja‐Yun;
Han, Yoonjay;
Lee, Chang‐Heon;
Kim, Jang‐Joo

Publication type:

Article

2D Semiconductors: Interfacial Band Engineering of MoS2/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000110

By:

Matković, Aleksandar;
Petritz, Andreas;
Schider, Gerburg;
Krammer, Markus;
Kratzer, Markus;
Karner‐Petritz, Esther;
Fian, Alexander;
Gold, Herbert;
Gärtner, Michael;
Terfort, Andreas;
Teichert, Christian;
Zojer, Egbert;
Zojer, Karin;
Stadlober, Barbara

Publication type:

Article

Interfacial Band Engineering of MoS2/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070026

By:

Matković, Aleksandar;
Petritz, Andreas;
Schider, Gerburg;
Krammer, Markus;
Kratzer, Markus;
Karner‐Petritz, Esther;
Fian, Alexander;
Gold, Herbert;
Gärtner, Michael;
Terfort, Andreas;
Teichert, Christian;
Zojer, Egbert;
Zojer, Karin;
Stadlober, Barbara

Publication type:

Article

Hysteresis‐Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800419

By:

Yuan, Kai;
Xu, Xiaolong;
Yin, Ruoyu;
Li, Yanping;
Liu, Shuai;
Dai, Lun;
Ye, Yu;
Meng, Yongqiang;
Lin, Der‐Yuh;
Watanabe, Kenji;
Taniguchi, Takashi

Publication type:

Article

Low‐Temperature‐Processed SiOx One Diode–One Resistor Crossbar Array and Its Flexible Memory Application.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 6, p. 1, doi. 10.1002/aelm.201700665

By:

Yoon, Jongwon;
Ji, Yongsung;
Lee, Seoung‐Ki;
Hyon, Jinho;
Tour, James M.

Publication type:

Article