Works matching DE "RECOMBINATION in semiconductors"
Results: 135
The role of spin in the kinetic control of recombination in organic photovoltaics.
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- Nature, 2013, v. 500, n. 7463, p. 435, doi. 10.1038/nature12339
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- Article
Specific features of technology of electron irradiation of large-area p- n silicon structures.
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- Technical Physics Letters, 2011, v. 37, n. 9, p. 801, doi. 10.1134/S1063785011090136
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Electron irradiation controlled profile of recombination center concentration in silicon.
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- Technical Physics Letters, 2011, v. 37, n. 5, p. 442, doi. 10.1134/S1063785011050075
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A semiconductor whispering-gallery-mode laser with ring cavity operating at room temperature.
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- Technical Physics Letters, 2009, v. 35, n. 8, p. 749, doi. 10.1134/S1063785009080173
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Relationship between quasi-threshold and thresholdless auger recombination processes in InAs/GaAs quantum dots.
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- Technical Physics Letters, 2006, v. 32, n. 8, p. 670, doi. 10.1134/S1063785006080104
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- Article
Recombination Instability and Double S-Switching in p-Ge(Au).
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- Technical Physics Letters, 2003, v. 29, n. 2, p. 122, doi. 10.1134/1.1558744
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A Capacitance Technique for the Study of Trapping Centers in Powdered Luminophors.
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- Technical Physics Letters, 2000, v. 26, n. 6, p. 470, doi. 10.1134/1.1262880
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Recombination of preadsorbed oxygen atoms at the surface of solids.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 603, doi. 10.1134/1.1262570
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Influence of electron bombardment on recombination and attachment in II–VI—IV–VI film photoconductors.
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- Technical Physics Letters, 1999, v. 25, n. 2, p. 111, doi. 10.1134/1.1262399
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Recombination properties of silicon passivated with rare-earth oxide films.
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- Technical Physics Letters, 1998, v. 24, n. 4, p. 254, doi. 10.1134/1.1262074
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Carrier transport in a diode base with locally nonuniform recombination properties.
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- Technical Physics Letters, 1997, v. 23, n. 5, p. 369, doi. 10.1134/1.1261684
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Multi-layer ambipolar light-emitting organic field-effect transistors.
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- Applied Physics B: Lasers & Optics, 2012, v. 106, n. 2, p. 425, doi. 10.1007/s00340-011-4722-x
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- Article
CONTACTLESS METHOD OF MEASURING CHARGE CARRIERS RECOMBINATION PARAMETERS IN SEMICONDUCTORS.
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- Naukovi visti NTUU - KPI, 2009, v. 2009, n. 6, p. 10
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Temperature dependence of photoluminescence from ordered GaInP2epitaxial layers.
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- Crystal Research & Technology, 2010, v. 45, n. 1, p. 79
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- Article
The effect of annealing ambient on carrier recombination in boron implanted silicon.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 10, p. 827, doi. 10.1002/pssr.201409295
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A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling.
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- Radioengineering, 2012, v. 21, n. 1, p. 213
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- Article
Matrix Isolation of H Atoms at Low Temperatures.
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- Journal of Low Temperature Physics, 2011, v. 162, n. 3/4, p. 105, doi. 10.1007/s10909-010-0302-4
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- Article
A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry.
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- Continuum Mechanics & Thermodynamics, 2016, v. 28, n. 6, p. 1671, doi. 10.1007/s00161-016-0500-7
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The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon.
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- Russian Physics Journal, 2006, v. 49, n. 2, p. 183, doi. 10.1007/s11182-006-0085-x
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- Article
Small-signal parameters of quantum dash lasers with multiple coupled energy states.
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- Optical Engineering, 2010, v. 49, n. 11, p. 114202, doi. 10.1117/1.3509369
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Planar dissociations and recombination energy of [110] superdislocations in Ni[sub 3] Al: generalized Peierls model in combination with ab initioelectron theory.
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- Philosophical Magazine Letters, 1999, v. 79, n. 11, doi. 10.1080/095008399176544
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- Article
Passivation of Silicon Surface by Laser Rapid Heating.
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- Journal of Laser Micro / Nanoengineering, 2014, v. 9, n. 2, p. 143, doi. 10.2961/jlmn.2014.02.0012
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- Article
Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II-VI and III-V MWIR Detector Technologies for Space Applications.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5405, doi. 10.1007/s11664-017-5628-0
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Strained and Unstrained Layer Superlattices for Infrared Detection.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1800, doi. 10.1007/s11664-009-0757-8
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- Article
The Effect of Wet Etching on Surface Properties of HgCdTe.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1781, doi. 10.1007/s11664-009-0844-x
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- Article
Modeling of Recombination in HgCdTe.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1415, doi. 10.1007/s11664-008-0417-4
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Recombination Waves in Dusty Plasma of a Non-Self-Sustained Discharge.
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- High Temperature, 2018, v. 56, n. 5, p. 632, doi. 10.1134/S0018151X18050048
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Magnetic Properties of Nd<sub>12</sub>Fe<sub>82</sub>B<sub>6</sub> and Nd<sub>14</sub>Fe<sub>80</sub>B<sub>6</sub> Powders Obtained by High Temperature Milling.
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- Acta Physica Polonica: A, 2012, v. 121, n. 1, p. 89, doi. 10.12693/APhysPolA.121.89
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Gain Spectrum for the In<sub>4</sub>Se<sub>3</sub> Crystal with a Non-Standard Dispersion Law of Charge Carriers.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 720, doi. 10.12693/APhysPolA.119.720
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Magnetoluminescence of a CdTe Quantum Dot with a Single Manganese Ion in Voigt Configuration.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 618, doi. 10.12693/APhysPolA.119.618
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Influence of Configuration Mixing on Energies and Recombination Dynamics of Excitonic States in CdTe/ZnTe Quantum Dots.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 615
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- Article
Recombination Processes in PbWO<sub>4</sub>:Tb<sub>3+</sub> Crystals.
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- Acta Physica Polonica: A, 2010, v. 117, n. 1, p. 143, doi. 10.12693/APhysPolA.117.143
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CuZnSnSe nanocrystals capped with S by ligand exchange: utilizing energy level alignment for efficiently reducing carrier rec ombination.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-262
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An efficient algorithm for optimizing the electrical performance of HBTs.
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- International Journal of Numerical Modelling, 2003, v. 16, n. 4, p. 353, doi. 10.1002/jnm.504
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Non-blinking semiconductor nanocrystals.
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- Nature, 2009, v. 459, n. 7247, p. 686, doi. 10.1038/nature08072
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Two-pulse two-photon optical nutation of biexcitons in semiconductors.
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- Optics & Spectroscopy, 2008, v. 104, n. 3, p. 351, doi. 10.1134/S0030400X08030077
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- Article
Effect of internal electric field on non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum well solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 2, p. 444, doi. 10.1002/pssa.201300390
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- Article
Origin of improved stability in green phosphorescent organic light-emitting diodes based on a dibenzofuran/spirobifluorene hybrid host.
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- Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 1, p. 381, doi. 10.1007/s00339-014-8746-z
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Generation and recombination in two-dimensional bipolar transistors.
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- Applied Physics A: Materials Science & Processing, 2014, v. 115, n. 3, p. 737, doi. 10.1007/s00339-014-8402-7
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Significant increase of crystalline quality and green emission by an interface modification of InGaN/GaN quantum wells.
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- Applied Physics A: Materials Science & Processing, 2011, v. 103, n. 2, p. 317, doi. 10.1007/s00339-010-6113-2
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Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell.
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- Applied Physics A: Materials Science & Processing, 2011, v. 103, n. 2, p. 335, doi. 10.1007/s00339-010-6152-8
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- Article
Photoluminescence of colloidal CdSe nano-tetrapods and quantum dots in oxygenic and oxygen-free environments.
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- Applied Physics A: Materials Science & Processing, 2011, v. 103, n. 2, p. 279, doi. 10.1007/s00339-010-6043-z
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Determination of bulk and surface transport properties by photocurrent spectral measurements.
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- Applied Physics A: Materials Science & Processing, 2000, v. 71, n. 3, p. 305, doi. 10.1007/s003390000528
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- Article
Photoluminescence dynamics of organic molecule-passivated Si nanoclusters.
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- European Physical Journal D (EPJ D), 2011, v. 63, n. 2, p. 289, doi. 10.1140/epjd/e2011-10513-x
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Dependence of the recombination kinetics of spatially separated electron-hole layers of the parallel magnetic field.
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- JETP Letters, 2009, v. 89, n. 10, p. 510, doi. 10.1134/S0021364009100087
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- Article
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-53732-y
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- Article
Photogenerated charge carrier recombination processes in CdS/P3OT solar cells: effect of structural and optoelectronic properties of CdS films.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110032
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Geminate Recombination in the Presence of Scavengers: The New Vision of the Old Problem.
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- Physics Research International, 2011, p. 1, doi. 10.1155/2011/451670
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- Article
Hydrogen- and carbon-related defects in heavily carbon-doped GaAs induced degradation under minority-carrier injection.
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- Electronics & Communications in Japan, 2010, v. 93, n. 5, p. 33, doi. 10.1002/ecj.10208
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Fast light-emitting silicon-germanium nanostructures for optical interconnects.
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- Optical & Quantum Electronics, 2012, v. 44, n. 12/13, p. 505, doi. 10.1007/s11082-012-9549-0
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