Works matching Flash memory

Results: 871

面向闪存的树型索引综述.

Published in:

Journal of Computer Engineering & Applications, 2022, v. 58, n. 22, p. 30, doi. 10.3778/j.issn.1002-8331.2112-0066

By:

孙鉴;
武晓晓;
谢开斌;
高锦涛;
刘凇佐;
巫思敏

Publication type:

Article

Threshold‐voltage‐drift‐aware scheduling for belief propagation decoding of LDPC‐coded NAND flash memory.

Published in:

IET Communications (Wiley-Blackwell), 2019, v. 13, n. 17, p. 2871, doi. 10.1049/iet-com.2019.0110

By:

Liu, Wenjie;
Han, Guojun;
Fan, Zhengqin;
Fang, Yi;
Cai, Guofa

Publication type:

Article

Soft‐input bit‐flipping decoding of generalised concatenated codes for application in non‐volatile flash memories.

Published in:

IET Communications (Wiley-Blackwell), 2019, v. 13, n. 4, p. 460, doi. 10.1049/iet-com.2018.5534

By:

Rajab, Mohammed;
Shavgulidze, Sergo;
Freudenberger, Jürgen

Publication type:

Article

A Column-Aware Index Management Using Flash Memory for Read-Intensive Databases.

Published in:

Journal of Information Processing Systems, 2015, v. 11, n. 3, p. 389, doi. 10.3745/JIPS.04.0017

By:

Si-Woo Byun;
Seok-Woo Jang

Publication type:

Article

External Sorting on Flash Memory Via Natural Page Run Generation.

Published in:

Computer Journal, 2011, v. 54, n. 11, p. 1882, doi. 10.1093/comjnl/bxr051

By:

Liu, Yang;
He, Zhen;
Chen, Yi-Ping Phoebe;
Nguyen, Thi

Publication type:

Article

Efficient Updates for OLAP Range Queries on Flash Memory.

Published in:

Computer Journal, 2011, v. 54, n. 11, p. 1773, doi. 10.1093/comjnl/bxr004

By:

McCarthy, Mitzi;
He, Zhen

Publication type:

Article

Program Disturb Research and Error Avoidance Algorithm Design of 3D-TLC NAND Flash Memory.

Published in:

International Journal of Performability Engineering, 2018, v. 14, n. 8, p. 1685, doi. 10.23940/ijpe.18.08.p4.16851694

By:

Xiaoshan Yang;
Ligu Zhu;
Qicong Zhang;
Meng Zhang;
Fei Wu;
Wei Zhang

Publication type:

Article

A Relative Reference Responsive LRU based Page Replacement Algorithm for NAND Flash Memory.

Published in:

Webology, 2021, v. 18, n. 1, p. 62, doi. 10.14704/WEB/V18I1/WEB18027

By:

Paulson, Hitha;
Rajesh, R.

Publication type:

Article

Various Flash Memory Devices of Novel Design.

Published in:

IETE Technical Review, 2009, v. 26, n. 4, p. 247, doi. 10.4103/0256-4602.52994

By:

Jang-Gn Yun;
Jong Duk Lee;
Byung-Gook Park

Publication type:

Article

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory.

Published in:

Applied Sciences (2076-3417), 2024, v. 14, n. 15, p. 6689, doi. 10.3390/app14156689

By:

Bae, Hee Young;
Hong, Seul Ki;
Park, Jong Kyung

Publication type:

Article

Efficient FTL-Aware Data Categorization and Identification Scheme for Flash Memory.

Published in:

Journal of Circuits, Systems & Computers, 2015, v. 24, n. 8, p. -1, doi. 10.1142/S0218126615501133

By:

Ayele, Sololia Gudeta;
Jin, Rize;
Kwon, Se Jin;
Attique, Muhammad;
Chung, Tae-Sung

Publication type:

Article

Bilayer LDPC Codes Combined with Perturbed Decoding for MLC NAND Flash Memory.

Published in:

Entropy, 2024, v. 26, n. 1, p. 54, doi. 10.3390/e26010054

By:

Kong, Lingjun;
Liu, Haiyang;
Hou, Wentao;
Meng, Chao

Publication type:

Article

Channel Modeling and Quantization Design for 3D NAND Flash Memory.

Published in:

Entropy, 2023, v. 25, n. 7, p. 965, doi. 10.3390/e25070965

By:

Wang, Cheng;
Mei, Zhen;
Li, Jun;
Shu, Feng;
He, Xuan;
Kong, Lingjun

Publication type:

Article

E<sup>3</sup>C Techniques for Protecting NAND Flash Memories.

Published in:

Journal of Electronic Testing, 2023, v. 39, n. 4, p. 487, doi. 10.1007/s10836-023-06075-6

By:

Lu, Shyue-Kung;
Tsai, Zeng-Long

Publication type:

Article

Testing Disturbance Faults in Various NAND Flash Memories.

Published in:

Journal of Electronic Testing, 2014, v. 30, n. 6, p. 643, doi. 10.1007/s10836-014-5487-z

By:

Hou, Chih-Sheng;
Li, Jin-Fu

Publication type:

Article

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory.

Published in:

Eng (2673-4117), 2024, v. 5, n. 1, p. 495, doi. 10.3390/eng5010027

By:

Kim, Beomjun;
Seo, Gyeongseob;
Kim, Myungsuk

Publication type:

Article

STANDARDS COMPETITION IN THE PRESENCE OF DIGITAL CONVERSION TECHNOLOGY: AN EMPIRICAL ANALYSIS OF THE FLASH MEMORY CARD MARKET.

Published in:

MIS Quarterly, 2012, v. 36, n. 3, p. 921, doi. 10.2307/41703486

By:

Zhechao Liu, Charles;
Kemerer, Chris F.;
Slaughter, Sandra A.;
Smith, Michael D.

Publication type:

Article

Analysis of HBM Failure in 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 6, p. 944, doi. 10.3390/electronics11060944

By:

Song, Biruo;
Li, Zhiguo;
Wang, Xin;
Fu, Xiang;
Liu, Fei;
Jin, Lei;
Huo, Zongliang

Publication type:

Article

Technique for Profiling the Cycling-Induced Oxide Trapped Charge in NAND Flash Memories.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 20, p. 2492, doi. 10.3390/electronics10202492

By:

Chiu, Yung-Yueh;
Shirota, Riichiro

Publication type:

Article

PA-LIRS: An Adaptive Page Replacement Algorithm for NAND Flash Memory.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2172, doi. 10.3390/electronics9122172

By:

Wang, Fangjun;
Jiang, Xianliang;
Huang, Jifu;
Chen, Fuguang

Publication type:

Article

DSFTL: An Efficient FTL for Flash Memory Based Storage Systems.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 1, p. 145, doi. 10.3390/electronics9010145

By:

Chae, Suk-Joo;
Mativenga, Ronnie;
Paik, Joon-Young;
Attique, Muhammad;
Chung, Tae-Sun

Publication type:

Article

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-89936-8

By:

Kim, Yongha;
Ryu, Seungjun;
Lee, Sungryung

Publication type:

Article

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 14, p. N.PAG, doi. 10.3390/nano12142459

By:

Yu, Xinyue;
Ma, Zhongyuan;
Shen, Zixiao;
Li, Wei;
Chen, Kunji;
Xu, Jun;
Xu, Ling

Publication type:

Article

The Real-Time Compression Layer for Flash Memory in Mobile Multimedia Devices.

Published in:

Mobile Networks & Applications, 2008, v. 13, n. 6, p. 547, doi. 10.1007/s11036-008-0089-6

By:

Chin-Hsing Chen;
Chun-Ta Chen;
Wen-Tzeng Huang

Publication type:

Article

Reversing File Access Control Using Disk Forensics on Low-Level Flash Memory.

Published in:

Journal of Cybersecurity & Privacy, 2024, v. 4, n. 4, p. 805, doi. 10.3390/jcp4040038

By:

Rother, Caleb;
Chen, Bo

Publication type:

Article

Self-adaptive testing to determine sample size for flash memory solutions.

Published in:

KSII Transactions on Internet & Information Systems, 2014, v. 8, n. 6, p. 2139, doi. 10.3837/tiis.2014.06.019

By:

Chul-Hoon Byun;
Chang-Kyun Jeon;
Taek Lee;
Hoh Peter In

Publication type:

Article

TridentFS: a hybrid file system for non-volatile RAM, flash memory and magnetic disk.

Published in:

Software: Practice & Experience, 2016, v. 46, n. 3, p. 291, doi. 10.1002/spe.2299

By:

Huang, Ting‐Chang;
Chang, Da‐Wei

Publication type:

Article

Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems.

Published in:

Marine Drugs, 2014, v. 12, n. 10, p. 18851, doi. 10.3390/s141018851

By:

Min Huang;
Zhaoqing Liu;
Liyan Qiao

Publication type:

Article

The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 7, p. 1, doi. 10.1002/adfm.202208525

By:

Kim, Taeho;
Kim, Giuk;
Lee, Young Kyu;
Ko, Dong Han;
Hwang, Junghyeon;
Lee, Sangho;
Shin, Hunbeom;
Jeong, Yeongseok;
Jung, Seong‐Ook;
Jeon, Sanghun

Publication type:

Article

NAND flash memory system based on the Harvard buffer architecture for multimedia applications.

Published in:

Multimedia Tools & Applications, 2015, v. 74, n. 16, p. 6287, doi. 10.1007/s11042-014-2122-z

By:

Kim, Cheong;
Kim, Kuinam;
Lee, JungHoon

Publication type:

Article

Integer Codes Correcting Asymmetric Errors in Nand Flash Memory.

Published in:

Mathematics (2227-7390), 2021, v. 9, n. 11, p. 1269, doi. 10.3390/math9111269

By:

Kostadinov, Hristo;
Manev, Nikolai

Publication type:

Article

Innovative Programming Approaches to Address Z-Interference in High-Density 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 16, p. 3123, doi. 10.3390/electronics13163123

By:

Choi, Yu Jin;
Hong, Seul Ki;
Park, Jong Kyung

Publication type:

Article

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 8, p. 1573, doi. 10.3390/electronics13081573

By:

Cho, Taeyoung;
Jung, Sungyeop;
Kang, Myounggon

Publication type:

Article

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 6, p. 1020, doi. 10.3390/electronics13061020

By:

Kim, Yeeun;
Hong, Seul Ki;
Park, Jong Kyung

Publication type:

Article

RSLSP: An Effective Recovery Scheme for Flash Memory Leveraging Shadow Paging.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 24, p. 4126, doi. 10.3390/electronics11244126

By:

Alahmadi, Abdulhadi;
Chung, Tae Sun

Publication type:

Article

Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 17, p. 2738, doi. 10.3390/electronics11172738

By:

Kim, Beomsu;
Kang, Myounggon

Publication type:

Article

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors.

Published in:

Sensors (14248220), 2023, v. 23, n. 6, p. 3212, doi. 10.3390/s23063212

By:

Fan, Hanshui;
Tian, Xuan;
Peng, Huiting;
Shen, Yinfeng;
Li, Liang;
Li, Ming;
Gao, Liming

Publication type:

Article

RTFTL: design and implementation of real-time FTL algorithm for flash memory.

Published in:

Journal of Supercomputing, 2022, v. 78, n. 17, p. 18959, doi. 10.1007/s11227-022-04602-4

By:

He, Qinlu;
Bian, Genqing;
Zhang, Weiqi;
Li, Zhen

Publication type:

Article

ZWR: Combining wear-leveling with reclamation for flash-memory-based storage systems of embedded systems.

Published in:

IEEJ Transactions on Electrical & Electronic Engineering, 2017, v. 12, n. 4, p. 575, doi. 10.1002/tee.22413

By:

Yang, Yin;
Sandeep, Subhoyt

Publication type:

Article

Performance Appraisal and Static Behaviour Modeling of a Nano-scale Flash Memory Cell by Using Quantum Dots' Floating Gate.

Published in:

International Journal of Simulation: Systems, Science & Technology, 2014, v. 15, n. 6, p. 19, doi. 10.5013/IJSSST.a.15.06.03

By:

Dhavse, Rasika;
Mishra, Vivekanand;
Patrikar, Rajendra

Publication type:

Article

Sanitization of Data in Nanoscale Flash Memory by Thermal Erasing and Reuse of Storage.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 14, p. 1, doi. 10.1002/pssa.201800194

By:

Park, Jun‐Young;
Moon, Dong‐Il;
Kim, Seong‐Yeon;
Im, Hwon;
Chang, Ki Soo;
Jeong, Chanbae;
Choi, Yang‐Kyu

Publication type:

Article

Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation.

Published in:

Journal of Robotics & Mechatronics, 2024, v. 36, n. 1, p. 88, doi. 10.20965/jrm.2024.p0088

By:

Takakura, Kenichiro;
Matsumoto, Kensuke;
Tateishi, Kousei;
Yoneoka, Masashi;
Tsunoda, Isao;
Suzuki, Shigekazu;
Kawatsuma, Shinji

Publication type:

Article

A NEW ADAPTIVE GREY DECISION-ENERGY AWARE MANAGEMENT SYSTEM BASED ON THE OPTIMAL-READ ONLY-WRITE BUFFER ARCHITECTURE FOR FLASH MEMORY IN EMBEDDED AND MOBILE DEVICES.

Published in:

Intelligent Automation & Soft Computing, 2010, v. 16, n. 4, p. 495, doi. 10.1080/10798587.2010.10643096

By:

Huang, W. T.;
Chen, C. H.;
Jeong, H.-D. J.;
Chen, C. T.

Publication type:

Article

A Bad-Block Test Design for Multiple Flash-Memory Chips.

Published in:

Journal of Information Science & Engineering, 2012, v. 28, n. 6, p. 1091

By:

Chin-Hsien Wu

Publication type:

Article

Generic and efficient framework for search trees on flash memory storage systems.

Published in:

GeoInformatica, 2013, v. 17, n. 3, p. 417, doi. 10.1007/s10707-012-0164-9

By:

Sarwat, Mohamed;
Mokbel, Mohamed;
Zhou, Xun;
Nath, Suman

Publication type:

Article

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory.

Published in:

Micromachines, 2023, v. 14, n. 11, p. 2007, doi. 10.3390/mi14112007

By:

Go, Donghyun;
Yoon, Gilsang;
Park, Jounghun;
Kim, Donghwi;
Kim, Jiwon;
Kim, Jungsik;
Lee, Jeong-Soo

Publication type:

Article

An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory.

Published in:

Micromachines, 2023, v. 14, n. 5, p. 901, doi. 10.3390/mi14050901

By:

Qi, Yueran;
Feng, Yang;
Wu, Jixuan;
Sun, Zhaohui;
Bai, Maoying;
Wang, Chengcheng;
Wang, Hai;
Zhan, Xuepeng;
Zhang, Junyu;
Liu, Jing;
Chen, Jiezhi

Publication type:

Article

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory.

Published in:

Micromachines, 2021, v. 12, n. 11, p. 1401, doi. 10.3390/mi12111401

By:

Jeong, Jun-Kyo;
Sung, Jae-Young;
Ko, Woon-San;
Nam, Ki-Ryung;
Lee, Hi-Deok;
Lee, Ga-Won

Publication type:

Article

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory.

Published in:

Micromachines, 2021, v. 12, n. 11, p. 1297, doi. 10.3390/mi12111297

By:

Jung, Woo-Jin;
Park, Jun-Young

Publication type:

Article

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories.

Published in:

Micromachines, 2021, v. 12, n. 10, p. 1152, doi. 10.3390/mi12101152

By:

Chen, Fei;
Chen, Bo;
Lin, Hongzhe;
Kong, Yachen;
Liu, Xin;
Zhan, Xuepeng;
Chen, Jiezhi

Publication type:

Article