Works matching IS 17554535 AND DT 2020 AND VI 13 AND IP 3

Results: 23

Virtual synchronous generator strategy for suppressing output power fluctuation without additional energy storage.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 602, doi. 10.1049/iet-pel.2019.0660

By:

Wanxing Sheng;
Yawei Wang;
Bangyin Liu;
Shanxu Duan;
Ming Wu

Publication type:

Article

Hybrid full-bridge converter with wide output voltage for high-power applications.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 592, doi. 10.1049/iet-pel.2019.0793

By:

Qinglin Zhao;
Wei Liu;
Deyu Wang;
Kunlun Li;
Yujie Wang

Publication type:

Article

Coupled-inductor-based high-gain converter utilising magnetising inductance to achieve soft-switching with low voltage stress on devices.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 576, doi. 10.1049/iet-pel.2018.6147

By:

Upadhyay, Prashant;
Kumar, Rajneesh;
Sathyan, Shelas

Publication type:

Article

Second-order lead compensator-based quadrature PLL for sensorless interior permanent magnet synchronous motor control.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 568, doi. 10.1049/iet-pel.2019.0822

By:

Shuo Chen;
Xiang Wu;
Junlei Chen;
Guojun Tan;
Yifei Wang

Publication type:

Article

Systematic design of linear quadratic regulator for digitally controlled grid-connected inverters.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 557, doi. 10.1049/iet-pel.2019.0514

By:

Bao Xie;
Mingxuan Mao;
Lin Zhou;
Yihao Wan;
Gaofeng Hao

Publication type:

Article

High-gain three-phase current-fed push-pull DC-DC converter.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 545, doi. 10.1049/iet-pel.2019.0843

By:

Lucena da Costa, André Elias;
Leandro Andersen, Romero

Publication type:

Article

High efficiency wide input extreme output (WIEO) tapped inductor buck-boost converter for high power LED lighting.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 535, doi. 10.1049/iet-pel.2018.5785

By:

Pal, Somnath;
Singh, Bhim;
Shrivastava, Ashish

Publication type:

Article

GaN-based split phase transformer-less PV inverter with auxiliary ZVT circuit.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 525, doi. 10.1049/iet-pel.2019.0498

By:

Yinglai Xia;
Roy, Jinia;
Ayyanar, Raja

Publication type:

Article

Modelling and optimisation of planar matrix transformer for high frequency regulated LLC converter.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 516, doi. 10.1049/iet-pel.2019.0397

By:

Liang Wu;
Long Xiao;
Jun Zhao;
Guozhu Chen

Publication type:

Article

Family of DTMRC-based DC-DC converters with an RZP.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 505, doi. 10.1049/iet-pel.2019.0372

By:

Fuqiang Han;
Yifeng Wang;
Liang Yang;
Chengshan Wang;
Ruixin Liu;
Zhun Meng

Publication type:

Article

Soft-switching DC-DC converter with controllable resonant tank featuring high efficiency and wide voltage gain range.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 495, doi. 10.1049/iet-pel.2019.0307

By:

Yifeng Wang;
Ruixin Liu;
Fuqiang Han;
Liang Yang;
Zhun Meng

Publication type:

Article

All SiC PWM rectifier-based off-board ultrafast charger for heavy electric vehicles.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 483, doi. 10.1049/iet-pel.2019.0583

By:

Yildirim, Doğan;
Öztürk, Serkan;
Çadirci, Işık;
Ermiş, Muammer

Publication type:

Article

High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 475, doi. 10.1049/iet-pel.2019.0413

By:

Jørgensen, Asger Bjørn;
Aunsborg, Thore Stig;
Bęczkowski, Szymon;
Uhrenfeldt, Christian;
Munk-Nielsen, Stig

Publication type:

Article

Low-cost analogue active gate driver for SiC MOSFET to enable operation in higher parasitic environment.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 463, doi. 10.1049/iet-pel.2019.0589

By:

Miryala, Vamshi Krishna;
Hatua, Kamalesh

Publication type:

Article

Temperature-dependent dynamic R<sub>DS,ON</sub> under different operating conditions in enhancement-mode GaN HEMTs.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 456, doi. 10.1049/iet-pel.2019.0540

By:

Yuan Li;
Yuanfu Zhao;
Huang, Alex Q.;
Liqi Zhang;
Qingyun Huang;
Ruiyang Yu;
Soumik Sen;
Qingxuan Ma;
Yunlong He

Publication type:

Article

Review and analysis of SiC MOSFETs' ruggedness and reliability.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 445, doi. 10.1049/iet-pel.2019.0587

By:

Jun Wang;
Xi Jiang

Publication type:

Article

Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal-oxide-semiconductor field-effect transistor modules.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 436, doi. 10.1049/iet-pel.2019.0588

By:

Sun Peng;
Zhao Zhibin;
Cai Yumeng;
Ke Junji;
Cui Xiang;
Ji Bing

Publication type:

Article

Model parameter calibration method of SiC power MOSFETs behavioural model.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 426, doi. 10.1049/iet-pel.2019.0400

By:

Yang Wen;
Yuan Yang;
Yong Gao

Publication type:

Article

High-temperature electrical performances and physics-based analysis of p-GaN HEMT device.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 420, doi. 10.1049/iet-pel.2019.0510

By:

Sheng Li;
Siyang Liu;
Ye Tian;
Chi Zhang;
Jiaxing Wei;
Xinyi Tao;
Ningbo Li;
Long Zhang;
Weifeng Sun

Publication type:

Article

Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 413, doi. 10.1049/iet-pel.2019.0573

By:

Jørgensen, Asger Bjørn;
Sønderskov, Simon Heindorf;
Beczkowski, Szymon;
Bidoggia, Benoît;
Munk-Nielsen, Stig

Publication type:

Article

Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 405, doi. 10.1049/iet-pel.2019.0412

By:

Daohui Li;
Haoze Luo;
Yue Huang;
Xiang Li;
Fang Qi;
Packwood, Matthew;
Haihui Luo;
Ximing Chen;
Chengzhan Li;
Yangang Wang;
Xiaoping Dai;
Guoyou Liu

Publication type:

Article

Recent advances and trend of HEV/EVoriented power semiconductors - an overview.

Published in:

IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 394, doi. 10.1049/iet-pel.2019.0401

By:

Guoyou Liu;
Kongjing Li;
Yangang Wang;
Haihui Luo;
Haoze Luo

Publication type:

Article

Guest Editorial: WBG semiconductor power electronics for industrial and automotive applications.

Published in:: IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 391, doi. 10.1049/iet-pel.2020.0051
Publication type:: Article