Works matching DE "HIGH electron mobility transistor noise"

High-speed FP GaN HEMT with f_T/f_MAX of 95/200 GHz.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 10, p. 657, doi. 10.1049/el.2018.0417

By:

• Moon, J. S.;
• Grabar, R.;
• Antcliffe, M.;
• Fung, H.;
• Tang, Y.;
• Tai, H.

Publication type:

Article