Works matching DE "SEMICONDUCTOR-metal boundaries"
Results: 126
Molecular control over Au/GaAs diodes.
- Published in:
- Nature, 2000, v. 404, n. 6774, p. 166, doi. 10.1038/35004539
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- Article
Pushing electrons around.
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- Nature, 2000, v. 404, n. 6774, p. 137, doi. 10.1038/35004697
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- Article
Nonlinear Effects in MSM Structures Based on AgSSe.
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- Journal of Engineering Physics & Thermophysics, 2015, v. 88, n. 4, p. 1030, doi. 10.1007/s10891-015-1281-8
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- Publication type:
- Article
Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 14, p. 896, doi. 10.1049/el.2018.1167
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- Article
Problem of fabrication of diamond-based high-power microwave FETs.
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- Journal of Communications Technology & Electronics, 2014, v. 59, n. 4, p. 379, doi. 10.1134/S106422691403005X
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- Article
EXTRACTION OF ILLUMINATED SOLAR CELL AND SCHOTTKY DIODE PARAMETERS USING A GENETIC ALGORITHM.
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- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2005, v. 16, n. 7, p. 1043, doi. 10.1142/S0129183105007704
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- Article
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1926, doi. 10.1007/s11671-010-9785-9
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- Article
A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene.
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- Nature Physics, 2013, v. 9, n. 1, p. 49, doi. 10.1038/nphys2487
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- Article
A 1.485-Gbit/s Video Signal Transmission System at Carrier Frequencies of 240 GHz and 300 GHz.
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- ETRI Journal, 2011, v. 33, n. 6, p. 965, doi. 10.4218/etrij.11.0211.0053
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- Article
PHOTOCONDUCTIVITY AND HIGH FIELD EFFECTS IN AMORPHOUS Se<sub>75</sub>In<sub>10</sub>Sb<sub>15</sub> THIN FILM.
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- Chalcogenide Letters, 2009, v. 6, n. 12, p. 695
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- Article
Sb-contained thin films Structural and electric properties.
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- Materials Science (0137-1339), 2006, v. 24, n. 4, p. 929
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- Article
Electrical properties of metal-semiconductor multilayers with amorphous structure.
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- Technical Physics Letters, 2006, v. 32, n. 3, p. 262, doi. 10.1134/S1063785006030266
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- Article
A Comparative Study of Gold Impregnation Methods for Obtaining Metal/Semiconductor Nanophotocatalysts: Direct Turkevich, Inverse Turkevich, and Progressive Heating Methods.
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- Catalysts (2073-4344), 2018, v. 8, n. 4, p. 161, doi. 10.3390/catal8040161
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- Article
On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO-PVA/n-Si Schottky barrier diodes.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 8, p. 1, doi. 10.1007/s00339-017-1168-y
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- Article
Barrier height inhomogeneities in Cu-nMoSe2 Schottky diode.
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- 2011
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- Back Cover
Numerical modeling of the effect of optical pulse position on the impulse response of a Metal-Semiconductor-Metal (MSM) photodetector (low field condition).
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 1, p. N.PAG, doi. 10.1051/epjap/2011110016
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- Article
RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System.
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- Sensors (14248220), 2014, v. 14, n. 2, p. 3493, doi. 10.3390/s140203493
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- Article
Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.
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- Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30
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- Publication type:
- Article
NANOPOROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR.
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- Journal of Nonlinear Optical Physics & Materials, 2010, v. 19, n. 4, p. 713, doi. 10.1142/S0218863510005637
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- Publication type:
- Article
Molecular junctions: Single-molecule contacts exposed.
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- Nature Materials, 2015, v. 14, n. 5, p. 465, doi. 10.1038/nmat4225
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- Article
In Situ Photocatalytically Heterostructured ZnOAg Nanoparticle Composites as Effective Cathode-Modifying Layers for Air-Processed Polymer Solar Cells.
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- Chemistry - A European Journal, 2015, v. 21, n. 33, p. 11899, doi. 10.1002/chem.201405073
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- Article
A Simple Method Producing Shadow Masks Used in Electrical Characterization Techniques.
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- Instruments & Experimental Techniques, 2003, v. 46, n. 3, p. 410, doi. 10.1023/A:1024443228073
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- Publication type:
- Article
A study of hydrothermally grown ZnO nanorod-based metal-semiconductor-metal UV detectors on glass substrates.
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- Nanomaterials & Nanotechnology, 2017, v. 7, p. 1, doi. 10.1177/1847980417702144
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- Publication type:
- Article
Commutation technique for an exciton photocreated close to a metal.
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- European Physical Journal B: Condensed Matter, 2003, v. 31, n. 3, p. 305, doi. 10.1140/epjb/e2003-00035-5
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- Publication type:
- Article
A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES.
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- Progress in Electromagnetics Research, 2013, v. 137, p. 407, doi. 10.2528/pier13011706
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- Publication type:
- Article
STRAIN-TUNABLE BAND GAP OF <sub>3</sub> SHEET: A FIRST-PRINCIPLES INVESTIGATION.
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- Modern Physics Letters B, 2013, v. 27, n. 15, p. -1, doi. 10.1142/S0217984913501108
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- Publication type:
- Article
THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES.
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- Modern Physics Letters B, 2008, v. 22, n. 26, p. 2529, doi. 10.1142/S0217984908017060
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- Publication type:
- Article
HIGH SENSITIVE HYDROGEN SENSOR BY Pd/OXIDE/InGaP MOS STRUCTURE.
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- Modern Physics Letters B, 2006, v. 20, n. 28, p. 1781, doi. 10.1142/S0217984906011888
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- Publication type:
- Article
STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY.
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- Modern Physics Letters B, 2006, v. 20, n. 28, p. 1825, doi. 10.1142/S0217984906012110
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- Article
ELECTRICAL CHARACTERIZATION OF VAPOR-DEPOSITED SINGLE CdS NANOWIRE.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 25, p. 3337, doi. 10.1142/S0217979211101648
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- Article
TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2008, v. 22, n. 14, p. 2309, doi. 10.1142/S0217979208039496
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- Article
MODELACIÓN DE LA CONDUCCIÓN TRANSVERSAL EN COMPÓSITOS SUPERCONDUCTORES.
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- Revista Cubana de Física, 2011, v. 28, n. 1, p. 35
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- Publication type:
- Article
High sensitivity detection of hydrogen/deuterium based on palladium top capped magnesium alloy thin films.
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- Materials Research Innovations, 2014, v. 18, n. S4, p. 601, doi. 10.1179/1432891714Z.000000000747
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- Publication type:
- Article
GaN planar Schottky barrier diode with cut-off frequency of 902 GHz.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 16, p. 1408, doi. 10.1049/el.2016.1937
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- Publication type:
- Article
Ohmic contacts to n-type GaN layer using ECR-sputtered AlN interfacial layer.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 22, p. 1823, doi. 10.1049/el.2015.2037
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747
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- Publication type:
- Article
Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 11, p. 1, doi. 10.1049/el.2013.0765
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- Publication type:
- Article
Photoemission Microscopy Investigation of Buried p–n GaAs Homojunctions and Al/n-GaAs Schottky Barriers.
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- Surface Review & Letters, 2002, v. 9, n. 1, p. 249, doi. 10.1142/S0218625X02002154
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- Publication type:
- Article
Microscopic Understanding and Control of Surfaces and Interfaces of Compound Semiconductors for Mesoscopic Devices.
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- Surface Review & Letters, 2000, v. 7, n. 5/6, p. 583, doi. 10.1142/S0218625X0000066X
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- Publication type:
- Article
Orbital magneto-electronic heat capacity of hydrogenated graphene in the presence of dilute charged impurity.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500539
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- Publication type:
- Article
Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer.
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- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 85, doi. 10.1142/S0129156407004278
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- Publication type:
- Article
OHMIC CONTACTS TO SIC.
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- International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 781, doi. 10.1142/S0129156405003429
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- Publication type:
- Article
DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 241, doi. 10.1142/S012915640400296X
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- Article
Designing p-Type Semiconductor-Metal Hybrid Structures for Improved Photocatalysis.
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- Angewandte Chemie International Edition, 2014, v. 53, n. 20, p. 5107, doi. 10.1002/anie.201310635
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- Article
Ohmic Contact of Au/Mo on HgCdTe.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2802, doi. 10.1007/s11664-016-4375-y
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- Publication type:
- Article
Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy.
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- Journal of Electronic Materials, 2011, v. 40, n. 11, p. 2179, doi. 10.1007/s11664-011-1741-7
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- Publication type:
- Article
Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1
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- Publication type:
- Article
Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.
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- Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3
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- Article
Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu Multilayer Structures as Schottky Metals for GaAs Diodes.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. L15, doi. 10.1007/s11664-004-0251-2
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- Article
Parameter determination from current-voltage characteristics of HgCdTe photodiodes in forward bias region.
- Published in:
- Optical & Quantum Electronics, 2013, v. 45, n. 7, p. 641, doi. 10.1007/s11082-012-9642-4
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- Publication type:
- Article