We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs.
- Authors
Narita, T.; Fujimoto, Y.; Wakejima, A.; Egawa, T.
- Abstract
An application for a transparent gate electrode with surface-side electroluminescence (EL) observation is proposed for identification of the gate leakage path in AlGaN/GaN high electron mobility transistors. This technique enables surface-side EL observation throughout the gate electrode, so that the substrate material is unrestricted. Through the transparent gate, a non-uniformly located spot-shape EL was clearly observed. By comparing devices with different leakage currents using EL intensity, the location marked by the spot-shape EL is found and demonstrates a dominant leakage path.
- Subjects
ELECTROLUMINESCENCE; ELECTRIC field effects; TRANSISTORS; ELECTRONICS; ELECTRON mobility
- Publication
Electronics Letters (Wiley-Blackwell), 2014, Vol 50, Issue 16, p1162
- ISSN
0013-5194
- Publication type
Academic Journal
- DOI
10.1049/el.2014.1131