Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs.

Narita, T.; Fujimoto, Y.; Wakejima, A.; Egawa, T.

An application for a transparent gate electrode with surface-side electroluminescence (EL) observation is proposed for identification of the gate leakage path in AlGaN/GaN high electron mobility transistors. This technique enables surface-side EL observation throughout the gate electrode, so that the substrate material is unrestricted. Through the transparent gate, a non-uniformly located spot-shape EL was clearly observed. By comparing devices with different leakage currents using EL intensity, the location marked by the spot-shape EL is found and demonstrates a dominant leakage path.

ELECTROLUMINESCENCE; ELECTRIC field effects; TRANSISTORS; ELECTRONICS; ELECTRON mobility

Electronics Letters (Wiley-Blackwell), 2014, Vol 50, Issue 16, p1162

0013-5194

Academic Journal

10.1049/el.2014.1131