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Sub-10-nm Scalability of Emerging Nanowire Junctionless FETs Using a Schottky Metallic Core.
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- Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1110, doi. 10.1007/s11664-020-08638-1
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- Article
A homodyne five-port network analyzer operating in the W-frequency band.
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- Microwave & Optical Technology Letters, 2004, v. 40, n. 6, p. 444, doi. 10.1002/mop.20001
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- Article
Systematic design of resonant microstrip sensors with sensitive coating.
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- Microwave & Optical Technology Letters, 2002, v. 32, n. 1, p. 21, doi. 10.1002/mop.10081
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- Article
A novel wide-angle polymeric X-junction using truncated-structural branches (TSB).
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- Microwave & Optical Technology Letters, 1999, v. 22, n. 3, p. 197, doi. 10.1002/(SICI)1098-2760(19990805)22:3<197::AID-MOP13>3.0.CO;2-X
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- Article
SELF-TIMED p-i-n -- HBT PPM RECEIVERS.
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- Microwave & Optical Technology Letters, 1994, v. 7, n. 13, p. 610, doi. 10.1002/mop.4650071308
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- Article
ANALYSIS OF MICROSTRIP MULTIPORT JUNCTIONS USING THE MULTIMODE BOUNDARY INTEGRAL METHOD.
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- Microwave & Optical Technology Letters, 1994, v. 7, n. 1, p. 22, doi. 10.1002/mop.4650070110
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- Article
MEMS 压电矢量水听器低噪声前置放大电路.
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- Piezoelectrics & Acoustooptics, 2024, v. 46, n. 4, p. 550, doi. 10.11977/j.issn.1004-2474.2024.04.022
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- Article
Distribution of nonequilibrium carriers in the region of a p- n junction under various photogeneration conditions.
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- Glass Physics & Chemistry, 2017, v. 43, n. 5, p. 421, doi. 10.1134/S108765961705011X
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- Article
Integrated opposite charge grafting induced ionic-junction fiber.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37884-0
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- Article
Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications.
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- Micromachines, 2024, v. 15, n. 7, p. 832, doi. 10.3390/mi15070832
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- Article
Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs.
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- Micromachines, 2023, v. 14, n. 9, p. 1679, doi. 10.3390/mi14091679
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- Article
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation.
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- Micromachines, 2023, v. 14, n. 7, p. 1420, doi. 10.3390/mi14071420
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- Article
Design of a Differential Low-Noise Amplifier Using the JFET IF3602 to Improve TEM Receiver.
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- Micromachines, 2022, v. 13, n. 12, p. 2211, doi. 10.3390/mi13122211
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- Article
Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.
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- Micromachines, 2022, v. 13, n. 6, p. 901, doi. 10.3390/mi13060901
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- Article
A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications.
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- Micromachines, 2022, v. 13, n. 3, p. 465, doi. 10.3390/mi13030465
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- Article
Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure.
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- Micromachines, 2021, v. 12, n. 8, p. 899, doi. 10.3390/mi12080899
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- Article
In-Pixel Temperature Sensors with an Accuracy of ±0.25 °C, a 3σ Variation of ±0.7 °C in the Spatial Domain and a 3σ Variation of ±1 °C in the Temporal Domain.
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- Micromachines, 2020, v. 11, n. 7, p. 665, doi. 10.3390/mi11070665
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- Article
Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch.
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- Micromachines, 2019, v. 10, n. 10, p. 632, doi. 10.3390/mi10100632
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- Article
Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.
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- IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24
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- Article
Experimental Observation of Oscillating Wave Propagation on Switch Lines for Generation of Continuous Electromagnetic Waves.
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- Research Letters in Signal Processing, 2009, v. 2009, p. 1, doi. 10.1155/2009/816806
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- Article
An EMC Susceptibility Study of Integrated Basic Bandgap Voltage Reference Cores.
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- Radioengineering, 2022, v. 31, n. 3, p. 413, doi. 10.13164/re.2022.0413
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- Article
Novel Resistorless First-Order Current-Mode Universal Filter Employing a Grounded Capacitor.
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- Radioengineering, 2011, v. 20, n. 3, p. 656
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- Article
Stylus ion trap for enhanced access and sensing.
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- Nature Physics, 2009, v. 5, n. 8, p. 551, doi. 10.1038/nphys1311
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- Article
Double-polysilicon self-aligned lateral bipolar transistors.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y
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- Article
A Review of 1/f Noise in Terms of Mobility Fluctuations and White Noise in Modern Submicron Bipolar Transistors — BJTs and HBTs.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 4, p. R175, doi. 10.1142/S0219477501000457
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- Article
Semiconductor Junction Noise Revisited: Where Have all the Physical Noise Sources Gone?
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- Fluctuation & Noise Letters, 2001, v. 1, n. 3, p. C15, doi. 10.1142/S0219477501000421
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- Article
Statistical Simulations of the Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors Using a Model Based on Generation-Recombination Centers.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 2, p. L51, doi. 10.1142/S0219477501000202
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- Article
Mechanisms of Current Flow in the Diode Structure with an n- p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film.
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- Russian Physics Journal, 2018, v. 60, n. 9, p. 1565, doi. 10.1007/s11182-018-1252-6
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- Article
Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers.
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- Russian Physics Journal, 2009, v. 52, n. 11, p. 1186, doi. 10.1007/s11182-010-9357-6
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- Article
An investigation of electrophysical characteristics of organic semiconductor films.
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- Russian Physics Journal, 2007, v. 50, n. 6, p. 612, doi. 10.1007/s11182-007-0089-1
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- Article
Ultra‐Low Power and Reliable Dynamic Memtransistor Based on Charge Storage Junction FET with Step‐Wise Potential Barrier for Energy‐Efficient Edge Computing Framework.
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- Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300904
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- Article
All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000883
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- Article
Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation.
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- Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000872
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- Article
Basic Electronics: A Look at Transistors.
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- Biomedical Instrumentation & Technology, 2006, v. 40, n. 1, p. 47
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- Article
Field-effect BJT: an adaptive and multifunctional nanoscale transistor.
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- Applied Nanoscience, 2022, v. 12, n. 5, p. 1435, doi. 10.1007/s13204-021-02299-0
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- Article
AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET.
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- IEEJ Transactions on Electrical & Electronic Engineering, 2020, v. 15, n. 12, p. 1844, doi. 10.1002/tee.23255
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- Article
A study of the silicon Bulk-Barrier Diodes designed in planar technology by means of simulation.
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- Journal of Engineering Science & Technology Review, 2009, v. 2, n. 1, p. 157
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- Article
Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities.
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- Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/4237686
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- Article
Contributions to the Demythisation of the Bipolar Junction Transistor.
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- Romanian Journal of Information Technology & Automatic Control / Revista Română de Informatică și Automatică, 2019, v. 29, n. 2, p. 113, doi. 10.33436/v29i2y201909
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- Article
Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods.
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- Journal of Electronic Materials, 2018, v. 47, n. 9, p. 4950, doi. 10.1007/s11664-018-6123-y
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- Article
Non-unique solutions in drift diffusion modelling of phototransistors.
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- International Journal of Numerical Modelling, 2000, v. 13, n. 1, p. 37, doi. 10.1002/(SICI)1099-1204(200001/02)13:1<37::AID-JNM380>3.0.CO;2-N
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- Article
Optical modulation of the effective channel thickness in GaAs field effect transistors with a Schottky gate (MESFETs).
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- Journal of Applied Spectroscopy, 2006, v. 73, n. 3, p. 394, doi. 10.1007/s10812-006-0089-x
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- Article
Electrothermal Averaged Model of a Half-Bridge DC–DC Converter Containing a Power Module.
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- Electronics (2079-9292), 2024, v. 13, n. 18, p. 3662, doi. 10.3390/electronics13183662
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- Article
A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 8, p. 1499, doi. 10.3390/electronics13081499
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- Article
Comparison between a Cascaded H-Bridge and a Conventional H-Bridge for a 5-kW Grid-Tied Solar Inverter.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 8, p. 1929, doi. 10.3390/electronics12081929
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- Article
3D Printed Electronic Circuits from Fusible Alloys.
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- Electronics (2079-9292), 2022, v. 11, n. 22, p. 3829, doi. 10.3390/electronics11223829
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- Article
A Single-Event Burnout Hardened Super-Junction Trench SOI LDMOS with Additional Hole Leakage Paths.
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- Electronics (2079-9292), 2022, v. 11, n. 22, p. 3764, doi. 10.3390/electronics11223764
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- Article
A New Gate Driver for Suppressing Crosstalk of SiC MOSFET.
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- Electronics (2079-9292), 2022, v. 11, n. 20, p. 3268, doi. 10.3390/electronics11203268
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- Article
Low-Noise Programmable Voltage Source.
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- Electronics (2079-9292), 2020, v. 9, n. 8, p. 1245, doi. 10.3390/electronics9081245
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- Article
Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications.
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- Electronics (2079-9292), 2020, v. 9, n. 2, p. 332, doi. 10.3390/electronics9020332
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- Article