Your institution may have access to this item. Find your institution then sign in to continue.

Title: Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation.
Authors: Verbitskiy, N. I.; Fedorov, A. V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D. Yu.; Vyalikh, D. V.; Yashina, L. V.; Eliseev, A. A.; Pichler, T.; Grüneis, A.
Publication: Scientific Reports, 2015, p17700
ISSN: 2045-2322
Publication type: Academic Journal
DOI: 10.1038/srep17700

We found a match

Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation.