Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation. | EBSCOhost

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Title: Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation.
Authors: Verbitskiy, N. I.; Fedorov, A. V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D. Yu.; Vyalikh, D. V.; Yashina, L. V.; Eliseev, A. A.; Pichler, T.; Grüneis, A.
Publication: Scientific Reports, 2015, p17700
ISSN: 2045-2322
Publication type: Academic Journal
DOI: 10.1038/srep17700