Works matching DE "MEMRISTORS"

Results: 1427

Synergistic m_GDI-Based ALU Design Using CMOS and VTEAM Memristor Model for Low-Power High-Speed Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3626, doi. 10.1007/s11664-024-11125-6

By:

Hussain, Syed Ali;
Prasad V, P N S B S V;
Sanki, Pradyut Kumar

Publication type:

Article

Storage of Electrical Information in Metal-Organic-Framework Memristors.

Published in:

Angewandte Chemie, 2014, v. 126, n. 17, p. 4526, doi. 10.1002/ange.201309642

By:

Yoon, Seok Min;
Warren, Scott C.;
Grzybowski, Bartosz A.

Publication type:

Article

Morphological and electrical characterizations of dip coated porous TiO2 thin films with different concentrations of thiourea additives for resistive switching applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 15928, doi. 10.1007/s10854-019-01944-3

By:

Roy, S.;
Tripathy, N.;
Sahu, P. K.;
Kar, J. P.

Publication type:

Article

Compositional variation of structural, electrical and magnetic properties of Dy substituted Ni-Co spinel ferrite.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10484, doi. 10.1007/s10854-016-5157-2

By:

Kadam, A.;
Rajpure, K.

Publication type:

Article

Resistive switching memory behaviours of MoSe nano-islands array.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 7, p. 7609, doi. 10.1007/s10854-016-4744-6

By:

Zhang, Xuejiao;
Qiao, Haixia;
Nian, Xiaofeng;
Huang, Yong;
Pang, Xiaofeng

Publication type:

Article

Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3957, doi. 10.1007/s10854-015-4248-9

By:

Sun, Bai;
Liang, Dandan;
Li, Xiaoping;
Chen, Peng

Publication type:

Article

Overview of emerging memristor families from resistive memristor to spintronic memristor.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4618, doi. 10.1007/s10854-015-2848-z

By:

Wang, Lei;
Yang, CiHui;
Wen, Jing;
Gai, Shan;
Peng, YuanXiu

Publication type:

Article

Extending the classification of devices in single-degree-of-freedom vibrating systems.

Published in:

PAMM: Proceedings in Applied Mathematics & Mechanics, 2016, v. 16, n. 1, p. 269, doi. 10.1002/pamm.201610123

By:

Franze, Andreas

Publication type:

Article

Correction to: Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation.

Published in:

2019

By:

de Carvalho, Rafaela C.;
Betts, Anthony J.;
Cassidy, John F.

Publication type:

Correction Notice

Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation.

Published in:

Journal of Solid State Electrochemistry, 2019, v. 23, n. 6, p. 1939, doi. 10.1007/s10008-019-04239-z

By:

de Carvalho, Rafaela C.;
Betts, Anthony J.;
Cassidy, John F.

Publication type:

Article

Effect of surfactants on the data directionality and learning behaviour of Al/TiO/FTO thin film memristor-based electronic synapse.

Published in:

Journal of Solid State Electrochemistry, 2017, v. 21, n. 9, p. 2753, doi. 10.1007/s10008-016-3459-1

By:

Dongale, T.;
Desai, N.;
Khot, K.;
Mullani, N.;
Pawar, P.;
Tikke, R.;
Patil, V.;
Waifalkar, P.;
Patil, P.;
Kamat, R.;
Bhosale, P.

Publication type:

Article

A model for the voltammetric behaviour of TiO memristors.

Published in:

Journal of Solid State Electrochemistry, 2016, v. 20, n. 5, p. 1229, doi. 10.1007/s10008-015-3109-z

By:

Cassidy, John;
Fox, Daryl;
Betts, Anthony

Publication type:

Article

Cyclic voltammetry of volatile memristors in the Venus flytrap: short-term memory.

Published in:

Functional Plant Biology, 2021, v. 48, n. 6, p. 567, doi. 10.1071/FP20379

By:

Volkov, Alexander G.;
Chua, Leon

Publication type:

Article

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays.

Published in:

Electronic Materials, 2024, v. 5, n. 1, p. 17, doi. 10.3390/electronicmat5010002

By:

Darwish, Mahmoud;
Pohl, László

Publication type:

Article

Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications.

Published in:

Chips, 2024, v. 3, n. 3, p. 235, doi. 10.3390/chips3030012

By:

Jana, Biswajit;
Roy Chaudhuri, Ayan

Publication type:

Article

Survey of Security Issues in Memristor-Based Machine Learning Accelerators for RF Analysis.

Published in:

Chips, 2024, v. 3, n. 2, p. 196, doi. 10.3390/chips3020009

By:

Lillis, Will;
Hoffing, Max Cohen;
Burleson, Wayne

Publication type:

Article

Synchronization in Three Coupled van der Pol Oscillators with Different Memristor Coupling Strengths.

Published in:

Journal of Signal Processing (1342-6230), 2024, v. 28, n. 4, p. 99, doi. 10.2299/jsp.28.99

By:

Yukinojo Kotani;
Yoko Uwate;
Yoshifumi Nishio

Publication type:

Article

Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00566-0

By:

Völkel, Lukas;
Ahmad, Rana Walied;
Bestaeva, Alana;
Braun, Dennis;
Cruces, Sofia;
Lee, Jimin;
Pasko, Sergej;
Krotkus, Simonas;
Heuken, Michael;
Menzel, Stephan;
Lemme, Max C.

Publication type:

Article

High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00530-y

By:

Spetzler, Benjamin;
Sangwan, Vinod K.;
Hersam, Mark C.;
Ziegler, Martin

Publication type:

Article

Multifunctional Ag–In–Zn–S/Cs3Cu2Cl5‐Based Memristors with Coexistence of Non‐Volatile Memory and Volatile Threshold Switching Behaviors for Neuroinspired Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201038

By:

He, Nan;
Ye, Fan;
Liu, Jun;
Sun, Tianlong;
Wang, Xinpeng;
Hou, Wenjie;
Shao, Weijing;
Wan, Xiang;
Tong, Yi;
Xu, Feng;
Sheng, Yang

Publication type:

Article

Emulating Nociceptive Receptor and LIF Neuron Behavior via ZrOx‐based Threshold Switching Memristor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201006

By:

Yang, Jia‐He;
Mao, Shi‐Cheng;
Chen, Kuan‐Ting;
Chen, Jen‐Sue

Publication type:

Article

Essential Characteristics of Memristors for Neuromorphic Computing (Adv. Electron. Mater. 2/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202370012

By:

Chen, Wenbin;
Song, Lekai;
Wang, Shengbo;
Zhang, Zhiyuan;
Wang, Guanyu;
Hu, Guohua;
Gao, Shuo

Publication type:

Article

Essential Characteristics of Memristors for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200833

By:

Chen, Wenbin;
Song, Lekai;
Wang, Shengbo;
Zhang, Zhiyuan;
Wang, Guanyu;
Hu, Guohua;
Gao, Shuo

Publication type:

Article

Protons: Critical Species for Resistive Switching in Interface‐Type Memristors (Adv. Electron. Mater. 1/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370004

By:

Kunwar, Sundar;
Somodi, Chase Bennett;
Lalk, Rebecca A.;
Rutherford, Bethany X.;
Corey, Zachary;
Roy, Pinku;
Zhang, Di;
Hellenbrand, Markus;
Xiao, Ming;
MacManus‐Driscoll, Judith L.;
Jia, Quanxi;
Wang, Haiyan;
Joshua Yang, J.;
Nie, Wanyi;
Chen, Aiping

Publication type:

Article

Protons: Critical Species for Resistive Switching in Interface‐Type Memristors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200816

By:

Kunwar, Sundar;
Somodi, Chase Bennett;
Lalk, Rebecca A.;
Rutherford, Bethany X.;
Corey, Zachary;
Roy, Pinku;
Zhang, Di;
Hellenbrand, Markus;
Xiao, Ming;
MacManus‐Driscoll, Judith L.;
Jia, Quanxi;
Wang, Haiyan;
Joshua Yang, J.;
Nie, Wanyi;
Chen, Aiping

Publication type:

Article

Highly Thermally Resilient Dual‐Mode (Digital/Analog) Amorphous Yttrium Fluoride Memristors Exhibiting Excellent Symmetric Linearity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200922

By:

Shi, Zhe‐Min;
Hou, Yu‐Che;
Chen, Cheng‐Yueh;
Tan, Guang‐Hsun;
Lin, Hao‐Cheng;
Lai, Po‐Ting;
Hou, Cheng‐Hung;
Shyue, Jing‐Jong;
Cheng, Wei‐Kai;
Su, Tsung‐Kai;
Lin, Hao‐Wu

Publication type:

Article

Mechanism Analysis and Highly Scaled Aluminum Nitride‐Based Self‐Rectifying Memristors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200702

By:

Zhang, Kailiang;
Zhao, Xuanyu;
Han, Yemei;
Hu, Kai;
Zhang, Yujian;
Li, Lianqiu;
Zhou, Qiaozhen;
Shan, Xin;
Lin, Xin;
Shan, Ke;
Ma, Zexia;
Liu, Qi;
Song, Zhitang;
Wang, Fang

Publication type:

Article

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200549

By:

Chekol, Solomon Amsalu;
Menzel, Stephan;
Waser, Rainer;
Hoffmann‐Eifert, Susanne

Publication type:

Article

Thermal Enhanced Resistive Switching Performance of <100>‐oriented Perovskite [(TZ‐H)2(PbBr4)]n with High Working Temperature: a Triazolium/(PbBr4)n2n– Interfacial Interaction Insight

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200537

By:

Song, Kaiyue;
Chen, Binjun;
Lin, Xiaoli;
Yang, Hailong;
Liu, Yue;
Liu, Yuanzheng;
Li, Haohong;
Chen, Zhirong

Publication type:

Article

Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200089

By:

Li, Bochang;
Wei, Wei;
Luo, Li;
Gao, Ming;
Yu, Zhi Gen;
Li, Sifan;
Ang, Kah‐Wee;
Zhu, Chunxiang

Publication type:

Article

Topologically Protected All‐Optical Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200579

By:

Choi, Seou;
Kim, Jungmin;
Kwak, Jeonghun;
Park, Namkyoo;
Yu, Sunkyu

Publication type:

Article

Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200435

By:

Xia, Qing;
Qin, Yuxiang;
Qiu, Peilun

Publication type:

Article

Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200421

By:

Khanas, Anton;
Hebert, Christian;
Becerra, Loïc;
Portier, Xavier;
Jedrecy, Nathalie

Publication type:

Article

Low Energy and Analog Memristor Enabled by Regulation of Ru ion Motion for High Precision Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200365

By:

Kim, Ji Eun;
Kwon, Jae Uk;
Chun, Suk Yeop;
Song, Young Geun;
Jeong, Doo Seok;
Kang, Chong‐Yun;
Kim, Seong Keun;
Nahm, Sahn;
Yoon, Jung Ho

Publication type:

Article

Wireless Multiferroic Memristor with Coupled Giant Impedance and Artificial Synapse Application.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200370

By:

Wang, Yao;
Xiao, Rui;
Xiao, Ning;
Wang, Zhongfeng;
Chen, Lei;
Wen, Yumei;
Li, Ping

Publication type:

Article

Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200353

By:

Vanka, Srinivas;
Shin, Hyungki;
Davidson, Bruce A.;
Liu, Chong;
Zou, Ke

Publication type:

Article

Humidity‐Enabled Organic Artificial Synaptic Devices with Ultrahigh Moisture Resistivity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200320

By:

Li, Jiayu;
Qian, Yangzhou;
Li, Wen;
Lin, Yen‐Hung;
Qian, Haowen;
Zhang, Tao;
Sun, Ke;
Wang, Jin;
Zhou, Jia;
Chen, Ye;
Zhu, Jintao;
Zhang, Guangwei;
Yi, Mingdong;
Huang, Wei

Publication type:

Article

Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200312

By:

Kapur, Omesh;
Guo, Dongkai;
Reynolds, Jamie;
Han, Yisong;
Beanland, Richard;
Jiang, Liudi;
de Groot, C. H.;
Huang, Ruomeng

Publication type:

Article

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing (Adv. Electron. Mater. 8/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270040

By:

Zhuo, Ye;
Midya, Rivu;
Song, Wenhao;
Wang, Zhongrui;
Asapu, Shiva;
Rao, Mingyi;
Lin, Peng;
Jiang, Hao;
Xia, Qiangfei;
Williams, R. Stanley;
Yang, J. Joshua

Publication type:

Article

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100580

By:

Lanza, Mario;
Palumbo, Felix;
Shi, Yuanyuan;
Aguirre, Fernando;
Boyeras, Santiago;
Yuan, Bin;
Yalon, Eilam;
Moreno, Enrique;
Wu, Tianru;
Roldan, Juan B.

Publication type:

Article

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200182

By:

Ascoli, Alon;
Menzel, Stephan;
Rana, Vikas;
Kempen, Tim;
Messaris, Ioannis;
Demirkol, Ahmet Samil;
Schulten, Michael;
Siemon, Anne;
Tetzlaff, Ronald

Publication type:

Article

Differentiable Content Addressable Memory with Memristors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101198

By:

Pedretti, Giacomo;
Graves, Catherine E.;
Van Vaerenbergh, Thomas;
Serebryakov, Sergey;
Foltin, Martin;
Sheng, Xia;
Mao, Ruibin;
Li, Can;
Strachan, John Paul

Publication type:

Article

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100696

By:

Zhuo, Ye;
Midya, Rivu;
Song, Wenhao;
Wang, Zhongrui;
Asapu, Shiva;
Rao, Mingyi;
Lin, Peng;
Jiang, Hao;
Xia, Qiangfei;
Williams, R. Stanley;
Yang, J. Joshua

Publication type:

Article

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100580

By:

Lanza, Mario;
Palumbo, Felix;
Shi, Yuanyuan;
Aguirre, Fernando;
Boyeras, Santiago;
Yuan, Bin;
Yalon, Eilam;
Moreno, Enrique;
Wu, Tianru;
Roldan, Juan B.

Publication type:

Article

Reduced Stochastic Resistive Switching in Organic‐Inorganic Hybrid Memristors by Vapor‐Phase Infiltration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200172

By:

Subramanian, Ashwanth;
Tiwale, Nikhil;
Kisslinger, Kim;
Nam, Chang‐Yong

Publication type:

Article

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101127

By:

Zhou, Guangdong;
Wang, Zhongrui;
Sun, Bai;
Zhou, Feichi;
Sun, Linfeng;
Zhao, Hongbin;
Hu, Xiaofang;
Peng, Xiaoyan;
Yan, Jia;
Wang, Huamin;
Wang, Wenhua;
Li, Jie;
Yan, Bingtao;
Kuang, Dalong;
Wang, Yuchen;
Wang, Lidan;
Duan, Shukai

Publication type:

Article

Role of Defects and Power Dissipation on Ferroelectric Memristive Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 6, p. 1, doi. 10.1002/aelm.202101392

By:

Roy, Pinku;
Kunwar, Sundar;
Zhang, Di;
Chen, Di;
Corey, Zachary;
Rutherford, Bethany X.;
Wang, Haiyan;
MacManus‐Driscoll, Judith L.;
Jia, Quanxi;
Chen, Aiping

Publication type:

Article

Electronic and Photoelectronic Memristors Based on 2D Materials.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101099

By:

Tang, Kai;
Wang, Yang;
Gong, Chuanhui;
Yin, Chujun;
Zhang, Miao;
Wang, Xianfu;
Xiong, Jie

Publication type:

Article

Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101059

By:

Huang, Biaohong;
Xie, Zhongshuai;
Feng, Dingshuai;
Li, Lingli;
Li, Xiaoqi;
Paudel, Tula R.;
Han, Zheng;
Hu, Weijin;
Yuan, Guoliang;
Wu, Tom;
Zhang, Zhidong

Publication type:

Article

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103

By:

Hodgson, Peter D.;
Lane, Dominic;
Carrington, Peter J.;
Delli, Evangelia;
Beanland, Richard;
Hayne, Manus

Publication type:

Article