Works matching DE "METAL-insulator transitions"
Results: 1085
Investigating the Structure‐property Relationships of Two Cd‐based Hybrid Multifunctional Compounds with High Tc, Bright Fluorescence and Wide Band‐gap.
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- Chemistry - A European Journal, 2024, v. 30, n. 12, p. 1, doi. 10.1002/chem.202303717
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Magnetic Relaxations of Chromium Nitride Porphyrinato Complexes Driven by the Anisotropic g‐Factor.
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- Chemistry - A European Journal, 2024, v. 30, n. 3, p. 1, doi. 10.1002/chem.202303082
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On the Role of the Sr<sub>3−x</sub>Ca<sub>x</sub>Al<sub>2</sub>O<sub>6</sub> Sacrificial Layer Composition in Epitaxial La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> Membranes.
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- Advanced Functional Materials, 2023, v. 33, n. 41, p. 1, doi. 10.1002/adfm.202304059
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Bandwidth Control and Symmetry Breaking in a Mott‐Hubbard Correlated Metal.
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- Advanced Functional Materials, 2023, v. 33, n. 41, p. 1, doi. 10.1002/adfm.202302330
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Layer Sliding And Twisting Induced Electronic Transitions In Correlated Magnetic 1t‐Nbse<sub>2</sub> Bilayers.
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- Advanced Functional Materials, 2023, v. 33, n. 38, p. 1, doi. 10.1002/adfm.202302989
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Positive and Negative Pressure Regimes in Anisotropically Strained V<sub>2</sub>O<sub>3</sub> Films.
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- Advanced Functional Materials, 2023, v. 33, n. 31, p. 1, doi. 10.1002/adfm.202211801
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Achieving Ultrahigh Electron Mobility in PdSe<sub>2</sub> Field‐Effect Transistors via Semimetal Antimony as Contacts.
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- Advanced Functional Materials, 2023, v. 33, n. 28, p. 1, doi. 10.1002/adfm.202301651
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Multiple Quantum States Induced in 1T‐TaSe<sub>2</sub> by Controlling the Stacking Order of Charge Density Waves.
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- Advanced Functional Materials, 2023, v. 33, n. 20, p. 1, doi. 10.1002/adfm.202214583
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Electromagnetic Field‐Responsive and Accurate Control of Bending in VO<sub>2</sub> Based Micro‐Pillar Array.
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- Advanced Functional Materials, 2023, v. 33, n. 5, p. 1, doi. 10.1002/adfm.202210325
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Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating.
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- Advanced Functional Materials, 2022, v. 32, n. 49, p. 1, doi. 10.1002/adfm.202208434
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Tuning Spin‐Orbit Torques Across the Phase Transition in VO<sub>2</sub>/NiFe Heterostructure.
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- Advanced Functional Materials, 2022, v. 32, n. 17, p. 1, doi. 10.1002/adfm.202111555
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Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions.
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- Advanced Functional Materials, 2022, v. 32, n. 13, p. 1, doi. 10.1002/adfm.202110391
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Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating.
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- Advanced Functional Materials, 2021, v. 31, n. 47, p. 1, doi. 10.1002/adfm.202104816
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Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides (Adv. Funct. Mater. 46/2021).
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- Advanced Functional Materials, 2021, v. 31, n. 46, p. 1, doi. 10.1002/adfm.202170338
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Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides.
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- Advanced Functional Materials, 2021, v. 31, n. 46, p. 1, doi. 10.1002/adfm.202102567
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A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing.
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- Advanced Functional Materials, 2021, v. 31, n. 23, p. 1, doi. 10.1002/adfm.202101099
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2D Hexagonal Covalent Organic Radical Frameworks as Tunable Correlated Electron Systems.
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- Advanced Functional Materials, 2021, v. 31, n. 6, p. 1, doi. 10.1002/adfm.202004584
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Binary Oxide Superlattices: Versatile Tunability of the Metal Insulator Transition in (TiO<sub>2</sub>)<sub>m</sub>/(VO<sub>2</sub>)<sub>m</sub> Superlattices (Adv. Funct. Mater. 51/2020).
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- Advanced Functional Materials, 2020, v. 30, n. 51, p. 1, doi. 10.1002/adfm.202070339
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Versatile Tunability of the Metal Insulator Transition in (TiO<sub>2</sub>)<sub>m</sub>/(VO<sub>2</sub>)<sub>m</sub> Superlattices.
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- Advanced Functional Materials, 2020, v. 30, n. 51, p. 1, doi. 10.1002/adfm.202004914
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Combined Effect of Temperature Induced Strain and Oxygen Vacancy on Metal‐Insulator Transition of VO<sub>2</sub> Colloidal Particles.
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- Advanced Functional Materials, 2020, v. 30, n. 49, p. 1, doi. 10.1002/adfm.202005311
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Mechanical Modulation of Colossal Magnetoresistance in Flexible Epitaxial Perovskite Manganite.
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- Advanced Functional Materials, 2020, v. 30, n. 40, p. 1, doi. 10.1002/adfm.202004597
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Functional Coatings on High‐Performance Polymer Fibers for Smart Sensing.
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- Advanced Functional Materials, 2020, v. 30, n. 14, p. 1, doi. 10.1002/adfm.201910555
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Tailoring Vanadium Dioxide Film Orientation Using Nanosheets: a Combined Microscopy, Diffraction, Transport, and Soft X‐Ray in Transmission Study.
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- Advanced Functional Materials, 2020, v. 30, n. 1, p. N.PAG, doi. 10.1002/adfm.201900028
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Versatile and Highly Efficient Controls of Reversible Topotactic Metal–Insulator Transitions through Proton Intercalation.
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- Advanced Functional Materials, 2019, v. 29, n. 50, p. N.PAG, doi. 10.1002/adfm.201907072
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Modeling the Metal–Insulator Phase Transition in Li<sub>x</sub>CoO<sub>2</sub> for Energy and Information Storage.
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- Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201902821
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Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fe<sub>x</sub>(C<sub>60</sub>)<sub>1−</sub><sub>x</sub> Granular Films Near the Metal‐Insulator Transition.
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- Advanced Functional Materials, 2019, v. 29, n. 36, p. N.PAG, doi. 10.1002/adfm.201808747
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Hydrogenation Dynamics of Electrically Controlled Metal–Insulator Transition in Proton‐Gated Transparent and Flexible WO<sub>3</sub> Transistors.
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- Advanced Functional Materials, 2019, v. 29, n. 34, p. N.PAG, doi. 10.1002/adfm.201902497
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Actuators: Single‐Crystalline Vanadium Dioxide Actuators (Adv. Funct. Mater. 20/2019).
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- Advanced Functional Materials, 2019, v. 29, n. 20, p. N.PAG, doi. 10.1002/adfm.201970138
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Single‐Crystalline Vanadium Dioxide Actuators.
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- Advanced Functional Materials, 2019, v. 29, n. 20, p. N.PAG, doi. 10.1002/adfm.201900527
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Multiaxial and Transparent Strain Sensors Based on Synergetically Reinforced and Orthogonally Cracked Hetero‐Nanocrystal Solids.
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- Advanced Functional Materials, 2019, v. 29, n. 4, p. N.PAG, doi. 10.1002/adfm.201806714
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Metal‐Insulator Transition: Gate‐Induced Massive and Reversible Phase Transition of VO<sub>2</sub> Channels Using Solid‐State Proton Electrolytes (Adv. Funct. Mater. 39/2018).
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- Advanced Functional Materials, 2018, v. 28, n. 39, p. N.PAG, doi. 10.1002/adfm.201802003
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Gate‐Induced Massive and Reversible Phase Transition of VO<sub>2</sub> Channels Using Solid‐State Proton Electrolytes.
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- Advanced Functional Materials, 2018, v. 28, n. 39, p. N.PAG, doi. 10.1002/adfm.201802003
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Electrochemically Triggered Metal-Insulator Transition between VO<sub>2</sub> and V<sub>2</sub>O<sub>5</sub>.
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- Advanced Functional Materials, 2018, v. 28, n. 34, p. 1, doi. 10.1002/adfm.201803024
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A Remark on the Estimate of a Determinant by Minami.
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- Letters in Mathematical Physics, 2007, v. 79, n. 1, p. 17, doi. 10.1007/s11005-006-0120-4
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A comparative study of transport behaviour of monovalent (Li<sup>1+</sup>) and trivalent (Bi<sup>3+</sup>) doped La<sub>1-x</sub>Li<sub>x</sub>MnO<sub>3+δ</sub> and La<sub>0.67-y</sub>Bi<sub>y</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> CMR materials.
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- Materials Research Innovations, 2020, v. 24, n. 5, p. 301, doi. 10.1080/14328917.2019.1673938
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Solid-state physics: Siphoning spins.
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- Nature, 2014, v. 511, n. 7510, p. 418, doi. 10.1038/511418a
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Mapping molecular motions leading to charge delocalization with ultrabright electrons.
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- Nature, 2013, v. 496, n. 7445, p. 343, doi. 10.1038/nature12044
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Optical-field-induced current in dielectrics.
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- Nature, 2013, v. 493, n. 7430, p. 70, doi. 10.1038/nature11567
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Hopes surface for exotic insulator.
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- Nature, 2012, v. 492, n. 7428, p. 165, doi. 10.1038/492165a
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A NEW NUMERICAL METHOD FOR SOLVING DELAY INTEGRAL EQUATIONS WITH VARIABLE BOUNDS BY USING GENERALIZED MOTT POLYNOMIALS.
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- Eskişehir Technical University Journal of Science & Technology A - Applied Sciences & Engineering, 2018, v. 19, n. 4, p. 291, doi. 10.18038/aubtda.409056
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Many-body localization in the infinite-interaction limit and the discontinuous eigenstate phase transition.
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- NPJ Quantum Information, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41534-022-00654-9
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Giant Change in Electrical Resistivity Induced by Moderate Pressure in Pt(bqd)2 – First Candidate Material for an Organic Piezoelectronic Transistor (OPET).
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300680
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Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS<sub>3</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300461
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Spatially Distributed Ramp Reversal Memory in VO<sub>2</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 10, p. 1, doi. 10.1002/aelm.202300085
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Spatially Distributed Ramp Reversal Memory in VO<sub>2</sub> (Adv. Electron. Mater. 10/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 10, p. 1, doi. 10.1002/aelm.202370046
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Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 7, p. 1, doi. 10.1002/aelm.202300007
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Enhancement of Extraordinary Size Effect on CaRuO<sub>3</sub> Ultrathin Films.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201312
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Dynamics of an Electrically Driven Phase Transition in Ca<sub>2</sub>RuO<sub>4</sub> Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201303
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Flexible Mott Synaptic Transistor on Polyimide Substrate for Physical Neural Networks.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200078
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Metal–Insulator Transition Driven by Traps in 2D WSe<sub>2</sub> Field‐Effect Transistor.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200046
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