Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling.

Klemt, Bernhard; Elhomsy, Victor; Nurizzo, Martin; Hamonic, Pierre; Martinez, Biel; Cardoso Paz, Bruna; Spence, Cameron; Dartiailh, Matthieu C.; Jadot, Baptiste; Chanrion, Emmanuel; Thiney, Vivien; Lethiecq, Renan; Bertrand, Benoit; Niebojewski, Heimanu; Bäuerle, Christopher; Vinet, Maud; Niquet, Yann-Michel; Meunier, Tristan; Urdampilleta, Matias

For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is a promising candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fully fabricated by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL), functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proofs-of-concept. Once the process is established, it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric fields and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.

QUBITS; SUPERCONDUCTING circuits; COMPLEMENTARY metal oxide semiconductors; ELECTRIC fields; DYNAMICAL systems; ELECTROSTATIC discharges; PHYSICS; ELECTRON spin

NPJ Quantum Information, 2023, Vol 9, Issue 1, p1

2056-6387

Academic Journal

10.1038/s41534-023-00776-8