Works matching DE "SAPPHIRES"

Results: 1775

Crystal-like thermal transport in amorphous carbon.

Published in:

NPJ Computational Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1038/s41524-025-01625-2

By:

Moon, Jaeyun;
Tian, Zhiting

Publication type:

Article

Optimara Little Sapphire.

Published in:: African Violet Magazine, 2014, v. 67, n. 2, p. 17
Publication type:: Article

Ti:sapphire femtosecond laser interaction with human dental dentine.

Published in:

Surface Engineering, 2011, v. 27, n. 10, p. 749, doi. 10.1179/1743294411Y.0000000005

By:

Ji, L F;
Li, L;
Devlin, H;
Liu, Z;
Whitehead, D;
Wang, Z B;
Wang, W;
Jiao, J

Publication type:

Article

Large-Area, Periodic, Hexagonal Wrinkles on Nanocrystalline Graphitic Film.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 34, p. 5492, doi. 10.1002/adfm.201502010

By:

Liu, Yanpeng;
Kenry;
Guo, Yufeng;
Sonam, Surabhi;
Hong, Seul Ki;
Nai, Mui Hoon;
Nai, Chang Tai;
Gao, Libo;
Chen, Jianyi;
Cho, Byung Jin;
Lim, Chwee Teck;
Guo, Wanlin;
Loh, Kian Ping

Publication type:

Article

High-quality Mg-doped p-type Ga2O3 crystalline thin film by pulsed laser.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 31, p. 24244, doi. 10.1007/s10854-022-09146-0

By:

Ebrahimi-Darkhaneh, Hadi;
Shekarnoush, Mahsa;
Arellano-Jimenez, Josefina;
Rodriguez, Rodolfo;
Colombo, Luigi;
Quevedo-Lopez, Manuel;
Banerjee, Sanjay K.

Publication type:

Article

Structure and bandgap determination of InN grown by RP-MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 22, p. 17668, doi. 10.1007/s10854-022-08630-x

By:

Dubreuil, R.;
Amin, M. R.;
Tot, J.;
Nagorski, M.;
Kadikoff, B.;
Moewes, A.;
Alexandrov, D.

Publication type:

Article

Effects of substrate morphology on permeability spectra of Ni80Fe20 films deposited on periodically rippled sapphire substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 14409, doi. 10.1007/s10854-022-08364-w

By:

Xu, Xu;
Han, Ying;
Jin, Lichuan;
Wen, Tianlong;
Liao, Yulong;
Tang, Xiaoli;
Zhang, Huaiwu;
Zhong, Zhiyong

Publication type:

Article

Sapphire substrate induced effects on β-Ga2O3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 16, p. 12629, doi. 10.1007/s10854-022-08212-x

By:

Singh, Amit Kumar;
Yadav, Saurabh;
Kulriya, P. K.;
Katharria, Y. S.

Publication type:

Article

Effect of Cr, N co-doping on the structural and optical properties of ZnO thin films deposited by pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 12408, doi. 10.1007/s10854-022-08198-6

By:

Jiang, Feng-Xian;
Zhang, Gui-Zhi;
Ji, Li-Fei;
Zhao, Ling-Mei;
Xu, Xiao-Hong

Publication type:

Article

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25507, doi. 10.1007/s10854-021-07016-9

By:

Simsek, Irem;
Yolcu, Gamze;
Koçak, MerveNur;
Pürlü, Kağan;
Altuntas, Ismail;
Demir, Ilkay

Publication type:

Article

Self-heating-induced electrical and optical switching in high quality VO2 films controlled with current pulses.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24285, doi. 10.1007/s10854-021-06895-2

By:

Gunes, Ozan;
Koughia, Cyril;
Zhang, Chunzi;
Belev, George;
Wen, Shi-Jie;
Yang, Qiaoqin;
Kasap, Safa O.

Publication type:

Article

FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 11, p. 14532, doi. 10.1007/s10854-021-06010-5

By:

Jelmakas, E.;
Kadys, A.;
Dmukauskas, M.;
Grinys, T.;
Tomašiūnas, R.;
Dobrovolskas, D.;
Gervinskas, G.;
Juodkazis, S.;
Talaikis, M.;
Niaura, G.

Publication type:

Article

The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3211, doi. 10.1007/s10854-020-05070-3

By:

Abd Rahman, Mohd Nazri;
Shuhaimi, Ahmad;
Seng, Ooi Chong;
Tan, Gary;
Anuar, Afiq;
Talik, Noor Azrina;
Abdul Khudus, Muhammad I. M.;
Chanlek, Narong;
Abd Majid, Wan Haliza

Publication type:

Article

Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 17, p. 14737, doi. 10.1007/s10854-020-04037-8

By:

Liu, Chuanyang;
Wang, Jia;
Shen, Yiming;
Du, Lin;
Zhang, Yachao;
Xu, Shengrui;
Jiang, Li;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

Growth and THz generation in organic nonlinear optical crystal: N,N′ bis(4-nitrophenyl)-(1R,2R)-diaminocyclohexane (BNDC).

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 16, p. 13628, doi. 10.1007/s10854-020-03919-1

By:

Boomadevi, Shanmugam;
Venkatesh, Mottamchetty;
Gayathri, Parthasarathy;
Anthony, Savarimuthu Philip;
Chaudhary, Anil Kumar;
Pandiyan, Krishnamoorthy;
Sastikumar, Dilibabu

Publication type:

Article

Structure, electrical transport, and magnetoresistance of manganite films on sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10702, doi. 10.1007/s10854-020-03619-w

By:

Zhang, H.;
Wang, H. O.;
Su, K. P.;
Huang, S.;
Ge, J. Y.;
Huo, D. X.

Publication type:

Article

Swanepoel method for AlInN/AlN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 9969, doi. 10.1007/s10854-020-03590-6

By:

Akpinar, Omer;
Bilgili, Ahmet Kürsat;
Baskose, Umran Ceren;
Ozturk, Mustafa Kemal;
Ozcelik, Suleyman;
Ozbay, Ekmel

Publication type:

Article

Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8445, doi. 10.1007/s10854-019-01163-w

By:

Jian, Li-Yi;
Lee, Hsin-Ying;
Lee, Ching-Ting

Publication type:

Article

Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 23, p. 19825, doi. 10.1007/s10854-018-0110-1

By:

Liu, Wen-Jie;
Hu, Xiao-Long;
Liu, Yi-Jun

Publication type:

Article

Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 16, p. 13766, doi. 10.1007/s10854-018-9507-0

By:

Zhao, Lu;
Yang, Kun;
Ai, Yujie;
Zhang, Lian;
Niu, Xiaolong;
Lv, Hongrui;
Zhang, Yun

Publication type:

Article

Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12373, doi. 10.1007/s10854-018-9351-2

By:

Bilgili, A. Kursat;
Akpinar, Ömer;
Kurtulus, Gürkan;
Ozturk, M. Kemal;
Ozcelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

Investigatory nanoscale thickness of the chemical reaction layer of sapphire substrate for the various dipping temperatures of slurry suitable in CMP.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 17, p. 13041, doi. 10.1007/s10854-017-7136-7

By:

Lin, Zone-Ching;
Ding, Hao-Yang;
Ma, Shih-Hung

Publication type:

Article

Study on the optical properties of β-GaO films grown by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 10997, doi. 10.1007/s10854-017-6882-x

By:

Hu, Daqiang;
Zhuang, Shiwei;
Ma, Zhengzheng;
Dong, Xin;
Du, Guotong;
Zhang, Baolin;
Zhang, Yuantao;
Yin, Jingzhi

Publication type:

Article

Colossal magnetoresistance at wide temperature range in PrSrMnO film grown on (0001) sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 11275, doi. 10.1007/s10854-017-6917-3

By:

Wang, Haiou;
Su, Kunpeng;
Huang, Shuai;
Huo, Dexuan;
Tan, Weishi

Publication type:

Article

A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9228, doi. 10.1007/s10854-017-6657-4

By:

Bashir, Umar;
Hassan, Zainuriah;
Ahmed, Naser

Publication type:

Article

AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP).

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9921, doi. 10.1007/s10854-015-3668-x

By:

Zhou, Yan;
Pan, Guoshun;
Shi, Xiaolei;
Gong, Hua;
Xu, Li;
Zou, Chunli

Publication type:

Article

Effect of O flow rate in the annealing process on metal-insulator transition of vanadium oxide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6920, doi. 10.1007/s10854-015-3310-y

By:

Li, Na;
Hu, Ming;
Liang, Ji-Ran;
Liu, Xing;
Wu, Mai-Jun

Publication type:

Article

The lattice distortion of β-GaO film grown on c-plane sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3231, doi. 10.1007/s10854-015-2821-x

By:

Chen, Yuanpeng;
Liang, Hongwei;
Xia, Xiaochuan;
Tao, Pengcheng;
Shen, Rensheng;
Liu, Yang;
Feng, Yanbin;
Zheng, Yuehong;
Li, Xiaona;
Du, Guotong

Publication type:

Article

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1591, doi. 10.1007/s10854-014-2580-0

By:

Cai, Xin;
Liang, Hongwei;
Xia, Xiaochuan;
Shen, Rensheng;
Liu, Yang;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Epitaxial growth and optical characterization of AlInGaN quaternary alloys with high Al/In mole ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 705, doi. 10.1007/s10854-014-2453-6

By:

Zhu, Min;
Zhang, Xiong;
Wang, Shuchang;
Yang, Hongquan;
Cui, Yiping

Publication type:

Article

Surface properties of AlN and AlGaN epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 950, doi. 10.1007/s10854-014-2487-9

By:

Yang, Hongquan;
Zhang, Xiong;
Wang, Shuchang;
Zhu, Min;
Cui, Yiping;
Dai, Ning

Publication type:

Article

Effects of sputtering atmosphere on the properties of c-plane ScAlN thin films prepared on sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 1, p. 472, doi. 10.1007/s10854-014-2423-z

By:

Zhang, Yao;
Zhu, Weixin;
Zhou, Dong;
Yang, Yixi;
Yang, Chengtao

Publication type:

Article

Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1404, doi. 10.1007/s10854-014-1742-4

By:

Li, Cheng-Che;
Kuo, Dong-Hau

Publication type:

Article

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 267, doi. 10.1007/s10854-013-1582-7

By:

Yang, Dechao;
Liang, Hongwei;
Qiu, Yu;
Shen, Rensheng;
Liu, Yang;
Xia, Xiaochuan;
Song, Shiwei;
Zhang, Kexiong;
Yu, Zhennan;
Du, Guotong

Publication type:

Article

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4471, doi. 10.1007/s10854-013-1427-4

By:

Arslan, Engin;
Ozturk, Mustafa;
Çakmak, Huseyin;
Demirel, Pakize;
Özçelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

Effect of AlN buffer layer on the microstructure and bandgap of AlN films deposited on sapphire substrates by pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4499, doi. 10.1007/s10854-013-1431-8

By:

He, Huan;
Huang, Lirong;
Xiao, Min;
Fu, Yuechun;
Shen, Xiaoming;
Zeng, Jianmin

Publication type:

Article

Improvement of the quality of GaN epilayer by combining a SiN interlayer and changed GaN growth mode.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 8, p. 2716, doi. 10.1007/s10854-013-1160-z

By:

Yang, Dechao;
Liang, Hongwei;
Qiu, Yu;
Song, Shiwei;
Liu, Yang;
Shen, Rensheng;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Erratum to: Enhanced H sensing properties of a-plane ZnO prepared on c-cut sapphire substrate by sputtering.

Published in:

2013

By:

Vijayalakshmi, K.;
Karthick, K.;
Pugazhvadivu, K.;
Tamilarasan, K.

Publication type:

Correction Notice

Enhanced H sensing properties of a-plane ZnO prepared on c-cut sapphire substrate by sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 4, p. 1325, doi. 10.1007/s10854-012-0927-y

By:

Vijayalakshmi, K.;
Karthick, K.;
Tamilarasan, K.

Publication type:

Article

Preparation and thermoelectric properties of BP films on SOI and sapphire substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 8, p. 966, doi. 10.1007/s10854-010-0245-1

By:

Kumashiro, Y.;
Nakamura, K.;
Enomoto, T.;
Tanaka, M.

Publication type:

Article

SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 176, doi. 10.1007/s10854-007-9515-y

By:

Kirste, Lutz;
Köhler, Klaus;
Maier, Manfred;
Kunzer, Michael;
Maier, Markus;
Wagner, Joachim

Publication type:

Article

The origin and reduction of dislocations in Gallium Nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 208, doi. 10.1007/s10854-008-9648-7

By:

Oliver, R. A.;
Kappers, M. J.;
McAleese, C.;
Datta, R.;
Sumner, J.;
Humphreys, C. J.

Publication type:

Article

Initial process effects on the surface morphology and structural property of the AlN epilayers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 215, doi. 10.1007/s10854-008-9682-5

By:

Xiaohong Chen;
Shuping Li;
Junyong Kang

Publication type:

Article

Microstructure of a-plane ( $$2\bar{1}\bar{1}0$$ ) GaN ELOG stripe patterns with different in-plane orientation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 46, doi. 10.1007/s10854-008-9638-9

By:

Wernicke, Tim;
Zeimer, Ute;
Herms, Martin;
Weyers, Markus;
Kneissl, Michael;
Irmer, Gert

Publication type:

Article

Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 744, doi. 10.1007/s10854-007-9401-7

By:

Ahn, C. H.;
Kim, Y. Y.;
Kang, S. W.;
Kong, B. H.;
Mohanta, S. K.;
Cho, H. K.;
Kim, J. H.;
Lee, H. S.

Publication type:

Article

Deep UV light emitting diodes grown by gas source molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 764, doi. 10.1007/s10854-007-9405-3

By:

Nikishin, Sergey;
Borisov, Boris;
Kuryatkov, Vladimir;
Holtz, Mark;
Garrett, Gregory A.;
Sarney, Wendy L.;
Sampath, Anand V.;
Hongen Shen;
Wraback, Michael;
Usikov, Alexander;
Dmitriev, Vladimir

Publication type:

Article

Dislocations at the interface between sapphire and GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 143, doi. 10.1007/s10854-007-9307-4

By:

Lankinen, A.;
Lang, T.;
Suihkonen, S.;
Svensk, O.;
Säynätjoki, A.;
Tuomi, T. O.;
McNally, P. J.;
Odnoblyudov, M.;
Bougrov, V.;
Danilewsky, A. N.;
Bergman, P.;
Simon, R.

Publication type:

Article

Ultrasonic vibration-assisted scribing of sapphire: effects of ultrasonic vibration and tool geometry.

Published in:

International Journal of Advanced Manufacturing Technology, 2025, v. 136, n. 7/8, p. 3559, doi. 10.1007/s00170-025-15071-3

By:

Ansary, Shah Rumman;
Kabir, Sarower;
Nnokwe, Cynthia;
He, Rui;
Cong, Weilong

Publication type:

Article

Research on subsurface damage mechanism and suppression method of ultrasonic vibration–assisted grinding of sapphire components under extreme service environment.

Published in:

International Journal of Advanced Manufacturing Technology, 2024, v. 135, n. 5/6, p. 2215, doi. 10.1007/s00170-024-14491-x

By:

Sun, GuoYan;
Zhang, Wanli;
Wang, JianYong;
Ding, JiaoTeng;
Wang, Bo;
Shi, Feng

Publication type:

Article

Relationship between surface roughness and subsurface crack damage depth of sapphire crystals cut by diamond wire saw based on slicing experiments.

Published in:

International Journal of Advanced Manufacturing Technology, 2024, v. 134, n. 11/12, p. 5907, doi. 10.1007/s00170-024-14571-y

By:

Zhu, Zhenfeng;
Gao, Yufei;
Shi, Zhenyu

Publication type:

Article