Found: 11
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Bridging the gap between atomically thin semiconductors and metal leads.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-29449-4
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- Article
Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation.
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- Electronics (2079-9292), 2020, v. 9, n. 10, p. 1723, doi. 10.3390/electronics9101723
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- Article
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS<sub>2</sub> MOSFET with an AlN Interfacial Layer.
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- Scientific Reports, 2016, p. 27676, doi. 10.1038/srep27676
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- Article
Pathways to Successful Transformation of Basic Education amid Educational Crises: A Case Study of the Experiments in Educational Reform by 271 Education Group.
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- Science Insights Education Frontiers, 2022, v. 13, n. 2, p. 1899, doi. 10.15354/sief.22.or076
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- Article
Scientific Evaluation of Student Assignments at Basic Education Level.
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- Science Insights Education Frontiers, 2021, v. 10, n. 2, p. 1403, doi. 10.15354/sief.21.co033
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- Article
Complex Ga<sub>2</sub>O<sub>3</sub> polymorphs explored by accurate and general-purpose machine-learning interatomic potentials.
- Published in:
- NPJ Computational Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41524-023-01117-1
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- Article
Point-defect-driven flattened polar phonon bands in fluorite ferroelectrics.
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- NPJ Computational Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41524-023-01075-8
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- Article
Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiN<sub>x</sub> Gate Dielectric.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700641
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- Article
Toward reliable MIS- and MOS-gate structures for GaN lateral power devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 861, doi. 10.1002/pssa.201532873
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- Article
Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride (Adv. Mater. 12/2023).
- Published in:
- Advanced Materials, 2023, v. 35, n. 12, p. 1, doi. 10.1002/adma.202370085
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- Article
Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride.
- Published in:
- Advanced Materials, 2023, v. 35, n. 12, p. 1, doi. 10.1002/adma.202208960
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- Publication type:
- Article