Strong-correlation induced high-mobility electrons in Dirac semimetal of perovskite oxide.

Fujioka, J.; Yamada, R.; Kawamura, M.; Sakai, S.; Hirayama, M.; Arita, R.; Okawa, T.; Hashizume, D.; Hoshino, M.; Tokura, Y.

Electrons in conventional metals become less mobile under the influence of electron correlation. Contrary to this empirical knowledge, we report here that electrons with the highest mobility ever found in known bulk oxide semiconductors emerge in the strong-correlation regime of the Dirac semimetal of perovskite CaIrO3. The transport measurements reveal that the high mobility exceeding 60,000 cm2V−1s−1 originates from the proximity of the Fermi energy to the Dirac node (ΔE 2V−1s−1 in correlated Dirac semimetal of perovskite CaIrO3, due to the enhanced electron correlation nearby the Mott transition.

Nature Communications, 2019, Vol 10, Issue 1, p1

2041-1723

Academic Journal

10.1038/s41467-018-08149-y