Works matching DE "INDIUM arsenide"

Results: 335

Realization of Wurtzite GaSb Using InAs Nanowire Templates.
Published in:
Advanced Functional Materials, 2018, v. 28, n. 28, p. 1, doi. 10.1002/adfm.201800512
By:
- Namazi, Luna;
- Gren, Louise;
- Nilsson, Malin;
- Garbrecht, Magnus;
- Thelander, Claes;
- Zamani, Reza R.;
- Dick, Kimberly A.
Publication type:
Article
Circuit quantum electrodynamics with a spin qubit.
Published in:
Nature, 2012, v. 490, n. 7420, p. 380, doi. 10.1038/nature11559
By:
- Petersson, K. D.;
- McFaul, L. W.;
- Schroer, M. D.;
- Jung, M.;
- Taylor, J. M.;
- Houck, A. A.;
- Petta, J. R.
Publication type:
Article
Applied physics: Terahertz-wave detector.
Published in:
Nature, 2012, v. 486, n. 7403, p. 297, doi. 10.1038/486297b
Publication type:
Article
Applied physics: Nanowire electronics comes of age.
Published in:
Nature, 2012, v. 481, n. 7380, p. 152, doi. 10.1038/481152a
By:
- Palacios, Tomás
Publication type:
Article
Quantum technology: Electrons spin in the field.
Published in:
Nature, 2010, v. 468, n. 7327, p. 1045, doi. 10.1038/4681045a
By:
- Reilly, David J.
Publication type:
Article
Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions.
Published in:
Technical Physics Letters, 2016, v. 42, n. 7, p. 747, doi. 10.1134/S1063785016070294
By:
- Surnina, M.;
- Akchurin, R.;
- Marmalyuk, A.;
- Bagaev, T.;
- Sizov, A.
Publication type:
Article
InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition.
Published in:
Technical Physics Letters, 2016, v. 42, n. 1, p. 96, doi. 10.1134/S1063785016010284
By:
- Levin, R.;
- Nevedomskii, V.;
- Pushnyi, B.;
- Bert, N.;
- Mizerov, M.
Publication type:
Article
Ion beam crystallization of InAs/GaAs(001) nanostructures.
Published in:
Technical Physics Letters, 2015, v. 41, n. 7, p. 661, doi. 10.1134/S1063785015070056
By:
- Chebotarev, S.;
- Pashchenko, A.;
- Williamson, A.;
- Lunin, L.;
- Irkha, V.;
- Gamidov, V.
Publication type:
Article
Modeling InAs quantum-dot formation on the side surface of GaAs nanowires.
Published in:
Technical Physics Letters, 2013, v. 39, n. 12, p. 1047, doi. 10.1134/S1063785013120043
By:
- Bolshakov, A.;
- Dubrovskii, V.;
- Yan, Xin;
- Zhang, Xia;
- Ren, Xiaomin
Publication type:
Article
Cooled photodiodes based on a type-II single p-InAsSbP/ n-InAs heterostructure.
Published in:
Technical Physics Letters, 2013, v. 39, n. 9, p. 818, doi. 10.1134/S1063785013090174
By:
- Il'inskaya, N.;
- Karandashev, S.;
- Latnikova, N.;
- Lavrov, A.;
- Matveev, B.;
- Petrov, A.;
- Remennyi, M.;
- Sevost'yanov, E.;
- Stus', N.
Publication type:
Article
Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate.
Published in:
Technical Physics Letters, 2013, v. 39, n. 9, p. 830, doi. 10.1134/S1063785013090216
By:
- Nadtochiy, A.;
- Kryzhanovskaya, N.;
- Maximov, M.;
- Zhukov, A.;
- Moiseev, E.;
- Kulagina, M.;
- Vashanova, K.;
- Zadiranov, Yu.;
- Mukhin, I.;
- Arakcheeva, E.;
- Livshits, D.;
- Lipovskii, A.
Publication type:
Article
Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes.
Published in:
Technical Physics Letters, 2012, v. 38, n. 5, p. 470, doi. 10.1134/S1063785012050239
By:
- Grebenshchikova, E.;
- Starostenko, D.;
- Sherstnev, V.;
- Konovalov, G.;
- Andreev, I.;
- Serebrennikova, O.;
- Il'inskaya, N.;
- Yakovlev, Yu.
Publication type:
Article
Optical anisotropy of InAs quantum dots.
Published in:
Technical Physics Letters, 2010, v. 36, n. 12, p. 1079, doi. 10.1134/S1063785010120047
By:
- Blokhin, S.;
- Nadtochiy, A.;
- Krasivichev, A.;
- Karachinsky, L.;
- Vasil'ev, A.;
- Maximov, M.;
- Zhukov, A.;
- Ledentsov, N.;
- Ustinov, V.
Publication type:
Article
LEDs based on InAs/InAsSb heterostructures for CO<sub>2</sub> spectroscopy (λ = 4.3 μm).
Published in:
Technical Physics Letters, 2010, v. 36, n. 1, p. 47, doi. 10.1134/S1063785010010153
By:
- Golovin, A. S.;
- Astakhova, A. P.;
- Kizhaev, S. S.;
- Il'inskaya, N. D.;
- Serebrennikova, O. Yu.;
- Yakovlev, Yu. P.
Publication type:
Article
On the possibility of growth quantum dot arrays in InAs/GaAs system by droplet epitaxy under MOVPE conditions.
Published in:
Technical Physics Letters, 2010, v. 36, n. 1, p. 4, doi. 10.1134/S1063785010010025
By:
- Akchurin, R. Kh.;
- Boginskaya, I. A.;
- Vagapova, N. T.;
- Marmalyuk, A. A.;
- Panin, A. A.
Publication type:
Article
Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system.
Published in:
Technical Physics Letters, 2007, v. 33, n. 7, p. 590, doi. 10.1134/S1063785007070152
By:
- Vasil'ev, A. P.;
- Gladyshev, A. G.;
- Zhukov, A. E.;
- Kryzhanovskaya, N. V.;
- Mikhrin, V. S.;
- Musikhin, Yu. G.;
- Petrov, V. S.;
- Ratnikov, V. V.;
- Shmidt, N. M.
Publication type:
Article
Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range.
Published in:
Technical Physics Letters, 2006, v. 32, n. 3, p. 229, doi. 10.1134/S1063785006030163
By:
- Mamutin, V. V.;
- Bondarenko, O. V.;
- Egorov, A. Yu.;
- Kryzhanovskaya, N. V.;
- Shernyakov, Yu. M.;
- Ustinov, V. M.
Publication type:
Article
Strain-Renormalized Energy Spectra of Electrons and Holes in InAs Quantum Dots in the InAs/GaAs Heterosystem.
Published in:
Technical Physics Letters, 2005, v. 31, n. 8, p. 691, doi. 10.1134/1.2035368
By:
- Dan'kiv, O. O.;
- Peleshchak, R. M.
Publication type:
Article
The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System.
Published in:
Technical Physics Letters, 2004, v. 30, n. 4, p. 272, doi. 10.1134/1.1748597
By:
- Dubrovskii, V.G.;
- Kryzhanovskaya, N.V.;
- Ustinov, V.M.;
- Tonkikh, A.A.;
- Egorov, V.A.;
- Polyakov, N.K.;
- Samsonenko, Yu. B.;
- Cirlin, G.E.
Publication type:
Article
High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures.
Published in:
Technical Physics Letters, 2004, v. 30, n. 1, p. 9, doi. 10.1134/1.1646701
By:
- Livshits, D.A.;
- Kovsh, A.R.;
- Zhukov, A.E.;
- Maleev, N.A.;
- Mikhrin, S.S.;
- Vasil'ev, A.P.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Ledentsov, N.N.;
- Lin, G.;
- Chi, J.
Publication type:
Article
Strongly Compensated InAs Obtained by Proton Irradiation.
Published in:
Technical Physics Letters, 2004, v. 30, n. 1, p. 15, doi. 10.1134/1.1646703
By:
- Zotova, N.V.;
- Karandashev, S.A.;
- Matveev, B.A.;
- Remenny&icaron;, M.A.;
- Stus, N.M.;
- Voronova, N.A.;
- Gusinski&icaron;, G.M.;
- Na&icaron;denov, V.O.
Publication type:
Article
Transient behaviour of quantum-dot saturable absorber mirrors at varying excitation fluence.
Published in:
Applied Physics B: Lasers & Optics, 2014, v. 116, n. 4, p. 919, doi. 10.1007/s00340-014-5778-1
By:
- Meiser, Niels;
- Marcinkevicius, Saulius;
- Pasiskevicius, Valdas
Publication type:
Article
AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier.
Published in:
Applied Physics B: Lasers & Optics, 2012, v. 106, n. 1, p. 57, doi. 10.1007/s00340-011-4669-y
By:
- Chen, Y.-F.;
- Lee, Y.;
- Huang, S.;
- Huang, K.;
- Chen, Y.
Publication type:
Article
High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers.
Published in:
Applied Physics B: Lasers & Optics, 2011, v. 103, n. 3, p. 609, doi. 10.1007/s00340-010-4290-5
By:
- Nikitichev, D.;
- Ding, Y.;
- Ruiz, M.;
- Calligaro, M.;
- Michel, N.;
- Krakowski, M.;
- Krestnikov, I.;
- Livshits, D.;
- Cataluna, M.;
- Rafailov, E.
Publication type:
Article
Two-dimensional array of room-temperature nanophotonic logic gates using InAs quantum dots in mesa structures.
Published in:
Applied Physics B: Lasers & Optics, 2011, v. 103, n. 3, p. 537, doi. 10.1007/s00340-011-4375-9
By:
- Kawazoe, T.;
- Ohtsu, M.;
- Aso, S.;
- Sawado, Y.;
- Hosoda, Y.;
- Yoshizawa, K.;
- Akahane, K.;
- Yamamoto, N.;
- Naruse, M.
Publication type:
Article
Vertical integration of ultrafast semiconductor lasers.
Published in:
Applied Physics B: Lasers & Optics, 2007, v. 88, n. 4, p. 493, doi. 10.1007/s00340-007-2760-1
By:
- Maas, D. J. H. C.;
- Bellancourt, A.-R.;
- Rudin, B.;
- Golling, M.;
- Unold, H. J.;
- Südmeyer, T.;
- Keller, U.
Publication type:
Article
Wave‐Function Topology Effects on Charged Excitons in Type‐II InAs/GaAsSb Quantum Dots and Rings.
Published in:
Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 1, p. N.PAG, doi. 10.1002/pssr.201800314
By:
- Llorens, José M.;
- Alén, Benito
Publication type:
Article
Toward Quantum Hall Effect in a Josephson Junction.
Published in:
Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 1, p. N.PAG, doi. 10.1002/pssr.201800222
By:
- Guiducci, Stefano;
- Carrega, Matteo;
- Biasiol, Giorgio;
- Sorba, Lucia;
- Beltram, Fabio;
- Heun, Stefan
Publication type:
Article
Impact of Electronic States of Conical Shape of Indium Arsenide/Gallium Arsenide Semiconductor Quantum Dots.
Published in:
Applications & Applied Mathematics, 2021, v. 16, n. 2, p. 1029
By:
- Fayz-Al-Asad, Md.;
- Al-Rumman, Md.;
- Alam, Md. Nur;
- Parvin, Salma;
- Tunç, Cemil
Publication type:
Article
High-resolution three-dimensional reciprocal-space mapping of InAs nanowires.
Published in:
Journal of Applied Crystallography, 2009, v. 42, n. 3, p. 369, doi. 10.1107/S0021889809009145
By:
- Mariager, S. O.;
- Lauridsen, S. L.;
- Dohn, A.;
- Bovet, N.;
- Sørensen, C. B.;
- Schlepütz, C. M.;
- Willmott, P. R.;
- Feidenhans'l, R.
Publication type:
Article
A detailed first principle study on the structural, elastic, and electronic properties of indium arsenide (InAs) under induced pressure.
Published in:
Canadian Journal of Physics, 2016, v. 94, n. 3, p. 254, doi. 10.1139/cjp-2015-0275
By:
- Kabita, Kh.;
- Jameson, M.;
- Sharma, B.I.;
- Brojen, R.K.;
- Thapa, R.K.
Publication type:
Article
Improved transistor.
Published in:
Chemical Engineering, 2008, v. 115, n. 6, p. 16
Publication type:
Article
POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.
Published in:
International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319
By:
- FÜRST, J.;
- PASCHER, H.;
- SHALYGIN, V. A.;
- VOROBJEV, L. E.;
- FIRSOV, D. A.;
- TONKIKH, A. A.;
- POLYAKOV, N. K.;
- SAMSONENKO, YU. B.;
- CIRLIN, G. E.;
- USTINOV, V. M.
Publication type:
Article
FORMATION OF SEMICONDUCTOR QUANTUM DOTS IN THE SUBCRITICAL THICKNESS RANGE.
Published in:
International Journal of Nanoscience, 2007, v. 6, n. 5, p. 339, doi. 10.1142/S0219581X07004900
By:
- ALEXANDER, TONKIKH;
- DUBROVSKII, VLADIMIR;
- MUSIKHIN, YURII;
- USTINOV, VICTOR;
- CIRLIN, GEORGE;
- POLYAKOV, NIKOLAY;
- SAMSONENKO, YURII;
- WERNER, PETER
Publication type:
Article
GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON InAs/InGaAs QUANTUM DOT STRUCTURES.
Published in:
International Journal of Nanoscience, 2007, v. 6, n. 5, p. 383, doi. 10.1142/S0219581X07004912
By:
- TORCHYNSKA, T. V.;
- LOZADA, E. VELÁZQUEZ;
- DYBIEC, M.;
- OSTAPENKO, S.;
- ELISEEV, P. G.;
- STINTZ, A.;
- MALLOY, K. J.;
- SIERRA, R. PENA
Publication type:
Article
OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS.
Published in:
International Journal of Nanoscience, 2006, v. 5, n. 6, p. 721, doi. 10.1142/S0219581X06005054
By:
- YUXIN ZENG;
- WEI LIU;
- FUHUA YANG;
- PING XU;
- PINGHENG TAN;
- HOUZHI ZHENG;
- YIPING ZENG;
- YINGJIE XING;
- DAPENG YU
Publication type:
Article
LATERAL INTERSUBBAND PHOTOCURRENT STUDY ON InAs/InAlAs/InP SELF-ASSEMBLED NANOSTRUCTURES.
Published in:
International Journal of Nanoscience, 2006, v. 5, n. 6, p. 729, doi. 10.1142/S0219581X06005066
By:
- LEI, W.;
- CHEN, Y. H.;
- JIN, P.;
- XU, B.;
- YE, X. L.;
- WANG, Z. G.;
- HUANG, X. Q.
Publication type:
Article
TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS.
Published in:
International Journal of Nanoscience, 2006, v. 5, n. 6, p. 847, doi. 10.1142/S0219581X0600525X
By:
- ZHIDAN FANG;
- ZHENG GONG;
- ZHENHUA MIAO;
- ZHICHUAN NIU
Publication type:
Article
SURFACE MORPHOLOGY EVOLUTION OF STRAINED InAs/GaAs(331)A FILMS.
Published in:
International Journal of Nanoscience, 2006, v. 5, n. 6, p. 883, doi. 10.1142/S0219581X06005315
By:
- ZHENG GONG;
- ZHIDAN FANG;
- ZHENHUA MIAO;
- ZHICHUAN NIU
Publication type:
Article
ELECTRON AND HOLE EFFECTIVE g FACTORS IN InAs/GaSb QUANTUM WELLS.
Published in:
International Journal of Nanoscience, 2003, v. 2, n. 6, p. 437, doi. 10.1142/S0219581X0300153X
By:
- Zakharova, A.;
- Yen, S.T.;
- Chao, K.A.
Publication type:
Article
Main scattering mechanisms in InAs/GaAs multi-quantum-well: a new approach by the global optimization method.
Published in:
Journal of Materials Science, 2016, v. 51, n. 3, p. 1333, doi. 10.1007/s10853-015-9451-9
By:
- Oliveira, A.;
- Rubinger, R.;
- Monteiro, H.;
- Rubinger, C.;
- Ribeiro, G.
Publication type:
Article
Theoretical prediction of structural parameters, band-gap energies, and mixing enthalpies of ScInAs alloys.
Published in:
Journal of Materials Science, 2013, v. 48, n. 14, p. 4899, doi. 10.1007/s10853-013-7270-4
By:
- López-Pérez, William;
- Simon-Olivera, Nicolás;
- González-Hernández, Rafael
Publication type:
Article
Selective growth of InAs quantum dots on GaAs driven by as kinetics.
Published in:
Crystal Research & Technology, 2014, v. 49, n. 8, p. 546, doi. 10.1002/crat.201300426
By:
- Magri, R.;
- Placidi, E.;
- Arciprete, F.;
- Patella, F.
Publication type:
Article
Properties of InAs codoped ZnO thin films prepared by pulsed laser deposition.
Published in:
Crystal Research & Technology, 2009, v. 44, n. 12, p. 1319
By:
- B. C. Shin;
- W. J. Lee;
- S. H. Park;
- S. C. Kim
Publication type:
Article
PL of low-density InAs/GaAs quantum dots with different bimodal populations.
Published in:
Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 9, p. 599, doi. 10.1049/mnl.2016.0779
By:
- Ying Wang;
- Xinzhi Sheng;
- Yao Liu;
- Baolai Liang;
- Xiaoli Li;
- Qinglin Guo;
- Mazur, Yuriy I.;
- Ware, Morgan E.;
- Salamo, Gregory J.
Publication type:
Article
Performance investigation of hetero material (InAs/Si)-based charge plasma TFET.
Published in:
Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 6, p. 358, doi. 10.1049/mnl.2016.0688
By:
- Yadav, Dharmendra Singh;
- Sharma, Dheeraj;
- Kumar, Ashish;
- Rathor, Deepak;
- Agrawal, Rahul;
- Tirkey, Sukeshni;
- Raad, Bhagwan Ram;
- Bajaj, Varun
Publication type:
Article
Thermodynamic modelling of miscibility in (InAs) x (GaAs) 1−x solid solutions.
Published in:
Phase Transitions, 2013, v. 86, n. 5, p. 516, doi. 10.1080/01411594.2012.703669
By:
- Adhikari, Jhumpa
Publication type:
Article
Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region.
Published in:
Technical Physics Letters, 2020, v. 46, n. 2, p. 150, doi. 10.1134/S1063785020020121
By:
- Semakova, A. A.;
- Lipnitskaya, S. N.;
- Mynbaev, K. D.;
- Bazhenov, N. L.;
- Kizhaev, S. S.;
- Chernyaev, A. V.;
- Stoyanov, N. D.;
- Lipsanen, H.
Publication type:
Article
High electron mobility in strained GaAs nanowires.
Published in:
Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-27006-z
By:
- Balaghi, Leila;
- Shan, Si;
- Fotev, Ivan;
- Moebus, Finn;
- Rana, Rakesh;
- Venanzi, Tommaso;
- Hübner, René;
- Mikolajick, Thomas;
- Schneider, Harald;
- Helm, Manfred;
- Pashkin, Alexej;
- Dimakis, Emmanouil
Publication type:
Article
Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy.
Published in:
Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 7, p. 658, doi. 10.1002/pssr.201409106
By:
- Anyebe, E. A.;
- Zhuang, Q.;
- Sanchez, A. M.;
- Lawson, S.;
- Robson, A. J.;
- Ponomarenko, L.;
- Zhukov, A.;
- Kolosov, O.
Publication type:
Article