Works matching Transistor Technologies

Results: 739

2D Dielectrophoresis using an active matrix array made by thin‐film‐transistor technology.

Published in:

IEEJ Transactions on Electrical & Electronic Engineering, 2019, v. 14, n. 9, p. 1280, doi. 10.1002/tee.22979

By:

Tixier‐Mita, Agnès;
Ihida, Satoshi;
Blanchard, Damien;
Shinohara, Marie;
Eiler, Anne‐Claire;
Cathcart, Grant Alexander;
Faure, Pierre‐Marie;
Kohno, Takashi;
Sakai, Yasuyuki;
Lévi, Timothée;
Toshiyoshi, Hiroshi

Publication type:

Article

Design of energy‐efficient ternary circuits using differential cascode voltage switch strategies in carbon nanotube field effect transistor technology.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 7, p. 1077, doi. 10.1049/iet-cds.2019.0375

By:

Sharma, Trapti;
Kumre, Laxmi

Publication type:

Article

Study of the UTBB BESOI Tunnel-FET Working as a Dual-Technology Transistor.

Published in:

Journal of Integrated Circuits & Systems, 2021, v. 16, n. 2, p. 1, doi. 10.29292/jics.v16i2.208

By:

Mori, Carlos A. B.;
Agopian, Paula G. D.;
Martino, João A.

Publication type:

Article

Technology and Modeling of Nonclassical Transistor Devices.

Published in:

Journal of Electrical & Computer Engineering, 2019, p. 1, doi. 10.1155/2019/4792461

By:

Angelov, George V.;
Nikolov, Dimitar N.;
Hristov, Marin H.

Publication type:

Article

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors.

Published in:

Sensors (14248220), 2019, v. 19, n. 11, p. 2454, doi. 10.3390/s19112454

By:

Božanić, Mladen;
Sinha, Saurabh

Publication type:

Article

An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04022

By:

Hatefinasab, Seyedehsomayeh

Publication type:

Article

260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.-G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.-S.

Publication type:

Article

260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.‐G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.‐S.

Publication type:

Article

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259

By:

Fuchsberger, Andreas;
Wind, Lukas;
Sistani, Masiar;
Behrle, Raphael;
Nazzari, Daniele;
Aberl, Johannes;
Prado Navarrete, Enrique;
Vukŭsić, Lada;
Brehm, Moritz;
Schweizer, Peter;
Vogl, Lilian;
Maeder, Xavier;
Weber, Walter M.

Publication type:

Article

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-01917-9

By:

Liu, Yang;
Lv, Yuanjie;
Guo, Shuoshuo;
Luan, Zhengfang;
Cheng, Aijie;
Lin, Zhaojun;
Yang, Yongxiong;
Jiang, Guangyuan;
Zhou, Yan

Publication type:

Article

COMPARISON OF TWO GAN TRANSISTOR TECHNOLOGIES IN BROADBAND POWER AMPLIFIERS.

Published in:

Microwave Journal, 2010, v. 53, n. 4, p. 184

By:

Azam, S.;
Svenson, C.;
Wahab, Q.;
Jonsson, R.

Publication type:

Article

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100290

By:

Alim, Mohammad A.;
Naima, Jannatul;
Rezazadeh, Ali A.

Publication type:

Article

ANALYSIS OF THE USE OF TRANSISTORS BASED ON SiC TECHNOLOGY IN INVERTERS IN THE CONTEXT OF ELECTROMAGNETIC COMPATIBILITY.

Published in:

Technical Transactions / Czasopismo Techniczne, 2016, v. 1-M, n. 2, p. 33, doi. 10.4467/2353737XCT.16.027.5289

By:

CZUCHRA, WOJCIECH;
MYSIŃSKI, WOJCIECH;
WOSZCZYNA, BARTOSZ

Publication type:

Article

An energy‐efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 4, p. 360, doi. 10.1049/cds2.12112

By:

Mahmoodian, Hamid;
Dolatshahi, Mehdi;
Zanjani, S. Mohammadali;
Honarvar, Mohammad Amin

Publication type:

Article

Organic Electrochemical Transistors: An Emerging Technology for Biosensing.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 6, p. 1, doi. 10.1002/admi.202102039

By:

Marks, Adam;
Griggs, Sophie;
Gasparini, Nicola;
Moser, Maximilian

Publication type:

Article

基于低温多晶硅-氧化物半导体混合集成的薄膜晶体管显示背板技术.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2021, v. 36, n. 2, p. 1, doi. 10.37188/CJLCD.2020-0268

By:

邓立昂;
陈世林;
黄博天;
郭小军

Publication type:

Article

A new factor for fabrication technologies evaluation for silicon nanowire transistors.

Published in:

Telkomnika, 2020, v. 18, n. 5, p. 2597, doi. 10.12928/TELKOMNIKA.v18i5.12121

By:

Hashim, Yasir;
Nazmus Shakib, Mohammed

Publication type:

Article

Design of unbalanced 9:2 ternary encoder and 2:9 ternary decoder circuits in resistive random access memory and carbon nanotube field effect transistor technology.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 10, p. 5403, doi. 10.1002/cta.4022

By:

Khurshid, Tabassum;
Singh, Vikram

Publication type:

Article

Thin Film Transistors Gas Sensors: Materials, Manufacturing Technologies and Test Results.

Published in:

Electronics & Electrical Engineering, 2009, n. 89, p. 39

By:

Pereira, M. C.;
Martins, M. J.;
Bonnaud, O.

Publication type:

Article

High-power microwave LDMOS transistors for wireless data transmission technologies (Review).

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1669, doi. 10.1134/S1063782610130105

By:

Kuznetsov, E.;
Shemyakin, A.

Publication type:

Article

An Asynchronous Design for Testability and Implementation in Thin-film Transistor Technology.

Published in:

Journal of Electronic Testing, 2011, v. 27, n. 2, p. 193, doi. 10.1007/s10836-011-5195-x

By:

Cheng, Chi-Hsuan;
Li, James

Publication type:

Article

Evaluation of safety and efficacy of insulated-gate bipolar transistor holmium laser technology for prostate enucleation in canine model: a preliminary study.

Published in:

Lasers in Medical Science, 2024, v. 39, n. 1, p. 1, doi. 10.1007/s10103-024-04155-3

By:

Sun, Jie;
Sherryn, Sherryn;
Tong, Zhen;
Xia, Shengqiang;
Chen, Bin

Publication type:

Article

BSIM3v3 Characterization and Simulation of MOS Si1-xGex Transistors with 130 nm Submicron Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04021

By:

Hebali, M.;
Bennaoum, M.;
Benzohra, M.;
Chalabi, D.;
Saïdane, A.

Publication type:

Article

Rapid and Highly Sensitive Detection of Leishmania by Combining Recombinase Polymerase Amplification and Solution-Processed Oxide Thin-Film Transistor Technology.

Published in:

Biosensors (2079-6374), 2023, v. 13, n. 8, p. 765, doi. 10.3390/bios13080765

By:

Wu, Weidong;
Biyani, Manish;
Hirose, Daisuke;
Takamura, Yuzuru

Publication type:

Article

Erratum: 'Improved thermal management of InP transistors in transferred‐substrate technology with diamond heat‐spreading layer'.

Published in:: Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1213, doi. 10.1049/el.2015.2278
Publication type:: Article

Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 13, p. 1010, doi. 10.1049/el.2015.1135

By:

Nosaeva, K.;
Weimann, N.;
Rudolph, M.;
John, W.;
Krueger, O.;
Heinrich, W.

Publication type:

Article

Improved thermal management of InP transistors in transferred‐substrate technology with diamond heat‐spreading layer.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 12, p. 1010, doi. 10.1049/el.2015.1135

By:

Nosaeva, K.;
Weimann, N.;
Rudolph, M.;
John, W.;
Krueger, O.;
Heinrich, W.

Publication type:

Article

基于微增材技术制造的氧化铟镓锌薄膜晶体管及其性能.

Published in:

Electronic Components & Materials, 2021, v. 40, n. 12, p. 1171, doi. 10.14106/j.cnki.1001-2028.2021.0403

By:

张奇;
崔西会;
方杰;
项徽清;
刘建国

Publication type:

Article

ADVANCEMENTS IN CELLULOSE/REDUCED GRAPHENE OXIDE COMPOSITES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS IN TRANSISTOR TECHNOLOGIES.

Published in:

International Journal of Mechatronics & Applied Mechanics, 2024, n. 16, p. 185

By:

Ramezani, Ghazaleh;
Stiharu, Ion;
van de Ven, Theo G. M.;
Nerguizian, Vahe

Publication type:

Article

One‐Transistor Memory: One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications (Adv. Electron. Mater. 8/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970043

By:

Dai, Mingzhi;
Yang, Wenwei;
Li, Ming;
Zhang, Lei;
Huo, Changhe;
Dong, Yemin;
Webster, Thomas J.

Publication type:

Article

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900262

By:

Dai, Mingzhi;
Yang, Wenwei;
Li, Ming;
Zhang, Lei;
Huo, Changhe;
Dong, Yemin;
Webster, Thomas J.

Publication type:

Article

Insulated Gate Bipolar Transistor Junction Temperature Estimation Technology for Traction Inverters Using a Thermal Model.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 5, p. 999, doi. 10.3390/electronics14050999

By:

Kong, Kijung;
Choi, Junhwan;
Park, Geonhyeong;
Baek, Seungmin;
Ju, Sungeun;
Han, Yongsu

Publication type:

Article

Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 2, p. 180, doi. 10.3390/electronics10020180

By:

Seon, Yoongeun;
Chang, Jeesoo;
Yoo, Changhyun;
Jeon, Jongwook

Publication type:

Article

Surface micromachining of a micro electromechanical inertial transducer based on commercially available Floating Gate Transistor technology.

Published in:

Superficies y Vacío, 2018, v. 31, n. 3, p. 48, doi. 10.47566/2018_syv31_1-030048

By:

Abarca-Jiménez, G. S.;
Rubio, G. Romero-Paredes;
Reyes-Barranca, M. A.;
Alemán-Arce, M. A.;
Munguía-Cervantes, J. E.;
Mendoza-Acevedo, S.

Publication type:

Article

On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 10, p. 1739, doi. 10.3390/nano12101739

By:

Wong, Hei;
Kakushima, Kuniyuki

Publication type:

Article

Polymer Dielectric-Based Emerging Devices: Advancements in Memory, Field-Effect Transistor, and Nanogenerator Technologies.

Published in:

Micromachines, 2024, v. 15, n. 9, p. 1115, doi. 10.3390/mi15091115

By:

Choi, Wangmyung;
Choi, Junhwan;
Han, Yongbin;
Yoo, Hocheon;
Yoon, Hong-Joon

Publication type:

Article

A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics.

Published in:

Micromachines, 2021, v. 12, n. 6, p. 655, doi. 10.3390/mi12060655

By:

Mirshojaeian Hosseini, Mohammad Javad;
Nawrocki, Robert A.

Publication type:

Article

Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node.

Published in:

Micromachines, 2019, v. 10, n. 12, p. 847, doi. 10.3390/mi10120847

By:

Hong, Jungmin;
Park, Jaewoong;
Lee, Jeawon;
Ham, Jeonghun;
Park, Kiron;
Jeon, Jongwook

Publication type:

Article

Analytical Neuro-Space Mapping Technology for Heterojunction Bipolar Transistors Modeling.

Published in:

Progress in Electromagnetics Research M, 2023, v. 120, p. 167, doi. 10.2528/pierm23080706

By:

Shuxia Yan;
Yuxing Li;
Chenglin Li;
Fengqi Qian;
Xu Wang;
Wenyuan Liu

Publication type:

Article

GALLIUM NITRIDE MICROWAVE TRANSISTOR TECHNOLOGY FOR RADAR APPLICATIONS.

Published in:: Microwave Journal, 2008, v. 51, n. 1, p. 106
Publication type:: Article

Effective dose estimation for pediatric voiding cystourethrography using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.

Published in:

Pediatric Radiology, 2009, v. 39, n. 6, p. 608, doi. 10.1007/s00247-009-1161-5

By:

Lee, Ryan;
Thomas, Karen E.;
Connolly, Bairbre L.;
Falkiner, Michelle;
Gordon, Christopher L.

Publication type:

Article

Design of an oscillator with low phase noise and medium output power in a 0.25 μm GaN-on-SiC high electron-mobility transistors technology.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2015, v. 9, n. 8, p. 795, doi. 10.1049/iet-map.2014.0449

By:

Hang Liu;
Xi Zhu;
Chirn Chye Boon;
Xiang Yi

Publication type:

Article

130nm Logic Technology Featuring 60nm Transistors, Low-K Dielectrics, and Cu Interconnects.

Published in:

Intel Technology Journal, 2002, v. 6, n. 2, p. 5

By:

Thompson, Scott;
Alavi, Mohsen;
Hussein, Makarem;
Jacob, Pauline;
Kenyon, Chris;
Moon, Peter;
Prince, Matthew;
Sivakumar, Sam;
Tyagi, Sunit;
Bohr, Mark

Publication type:

Article

Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 9, p. 1150, doi. 10.3390/cryst11091150

By:

Hernandez, Yoanlys;
Stampfer, Bernhard;
Grasser, Tibor;
Waltl, Michael

Publication type:

Article

A Fundamental Reason for the Need of Two Different Semiconductor Technologies for Complementary Thin-Film Transistor Operations.

Published in:

Crystals (2073-4352), 2019, v. 9, n. 11, p. 603, doi. 10.3390/cryst9110603

By:

Jang, Jiung;
Lee, Sungsik

Publication type:

Article

Flexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-023-44024-1

By:

Uguz, Ilke;
Ohayon, David;
Arslan, Volkan;
Sheelamanthula, Rajendar;
Griggs, Sophie;
Hama, Adel;
Stanton, John William;
McCulloch, Iain;
Inal, Sahika;
Shepard, Kenneth L.

Publication type:

Article

HIGH SPEED LOW POWER ANALYSIS OF 12 TRANSISTORS 2x4 LINE DECODER USING 45GPDK TECHNOLOGY.

Published in:

Scalable Computing: Practice & Experience, 2024, v. 25, n. 5, p. 3674, doi. 10.12694/scpe.v25i5.3096

By:

JAVVADI, SRUTHI PAVANI;
HANUMAN, C. R. S.;
PARASA, SIVADURGARAO;
NARAGANENI, SANNAJAJI

Publication type:

Article

Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors

Published in:

IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2322, doi. 10.1049/iet-pel.2015.0009

By:

Longobardi, Giorgia;
Udrea, Florin;
Sque, Stephen;
Croon, Jeroen;
Hurkx, Fred;
Šonský, Jan

Publication type:

Article

The Application of Graphene Field-Effect Transistor Biosensors in COVID-19 Detection Technology: A Review.

Published in:

Sensors (14248220), 2023, v. 23, n. 21, p. 8764, doi. 10.3390/s23218764

By:

Liang, Qin-Hong;
Cao, Ban-Peng;
Xiao, Qiang;
Wei, Dacheng

Publication type:

Article

Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology.

Published in:

Sensors (14248220), 2018, v. 18, n. 9, p. 2774, doi. 10.3390/s18092774

By:

Kam, Kevin A.;
Tengan, Brianne I. C.;
Hayashi, Cody K.;
Ordonez, Richard C.;
Garmire, David G.

Publication type:

Article