Influence of Iodine‐Containing Solutions on the Condition of a Porous Silicon Surface and Its Photoluminescent Properties.

Voloshina, T. V.; Kavetskaya, I. V.; Karavanskii, V. A.

The influence of surface treatment of porous silicon in iodine‐containing solutions on its photoluminescent properties has been investigated. The porous silicon samples were prepared by anodizing in HF‐based electrolytes and placed in fluoride‐hydrogen solutions with the addition of iodine immediately after their formation. The surface condition was controlled by IR Fourier spectroscopy methods in the 400–4000‐cm-1 range. It has been established that the result of the porous silicon treatment in iodine‐containing solutions is a decrease in the intensity of Si–Hx‐bonds without the appearance of additional vibrations in the range under investigation. At the same time, such a treatment substantially affects the spectrum and intensity of porous silicon photoluminescence and increases its stability in subsequent storage. The possible reasons for the revealed phenomena are discussed.

IODINE; SILICON; PHOTOLUMINESCENCE; SPECTRUM analysis; ANODIC oxidation of metals; FLUORIDES

Journal of Applied Spectroscopy, 2004, Vol 71, Issue 1, p89

0021-9037

Academic Journal

10.1023/B:JAPS.0000025354.48736.a9