Interfacial reactions for the non-stoichiometric TiB_x/(100)Si system.

Young-Ki Lee; Jung-Yuel Kim; You-Kee Lee; Gi-Seog Eom; Young-Kyu Kwon; Min-Sang Lee; Chul-Min Lim; Dong-Kun Kim; Young-Chul Jin; Dong-Koo Park

In order to evaluate the interfacial reactions in the TiB x/(100)Si system and the thermal stability of non-stoichiometric TiB x films (0 ≤ B/Ti ≤ 2.5), TiB x/Si samples prepared by a co-evaporation process were annealed in vacuum at temperatures between 300 and 1000°C. The solid phase reactions were investigated by means of sheet resistance, X-ray diffraction, transmission electron microscopy, X-ray photo-electron spectroscopy, and stress measurement. For TiB x samples with a ratio of B/Ti ≥ 2.0, an apparent structural change is not observed even after annealing at 1000°C for 1 h. For samples with a ratio of B/Ti 2 layer at the surface, indicating the salicide $$(\underline s elf - \underline {al} igned sil\underline {icide} )$$ process. The sheet resistance and the film stress in the Ti/Si and TiB x/Si systems are well explained by the solid phase reactions.

SOLID phase extraction; EVAPORATION (Chemistry); ELECTRIC discharges; ELECTRON microscopy; X-ray diffraction; ALLOYS; CORROSION resistant materials; STOICHIOMETRY

Journal of Materials Science, 2002, Vol 37, Issue 3, p515

0022-2461

Academic Journal

10.1023/A:1013761322684