Works matching DE "FIELD-effect devices"

Results: 190

RFID Sensor with Integrated Energy Harvesting for Wireless Measurement of dc Magnetic Fields.

Published in:

Sensors (14248220), 2025, v. 25, n. 10, p. 3024, doi. 10.3390/s25103024

By:

Fu, Shijie;
Bridges, Greg E.;
Kordi, Behzad

Publication type:

Article

Liquid-processed transition metal dichalcogenide films for field-effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 18106, doi. 10.1007/s10854-017-7755-z

By:

Omelianovych, A.;
Dominskiy, D.;
Feldman, E.;
Bessonov, A.;
Stevenson, K.;
Paraschuk, D.

Publication type:

Article

High sensitivity extended gate effect transistor based on VO nanorods.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1364, doi. 10.1007/s10854-016-5669-9

By:

Abd-Alghafour, N.;
Ahmed, Naser;
Hassan, Z.;
Almessiere, Munirah;
Bououdina, M.;
Al-Hardan, Naif

Publication type:

Article

Cardiac Magnetic Resonance Imaging (MRI) in Children is Safe with Most Pacemaker Systems, Including Those with Epicardial Leads.

Published in:

Pediatric Cardiology, 2020, v. 41, n. 4, p. 801, doi. 10.1007/s00246-020-02316-z

By:

Bireley, Madeline;
Kovach, Joshua R.;
Morton, Candace;
Cava, Joseph R.;
Pan, Amy Y.;
Nugent, Melodee;
Samyn, Margaret M.

Publication type:

Article

A New Approach toward the Realization of Specific and Label‐Free Biological Sensing Based on Field‐Effect Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200399

By:

Bhattacharyya, Ie Mei;
Ron, Izhar;
Shima‐Edelstein, Ruth;
Pikhay, Evgeny;
Roizin, Yakov;
Shalev, Gil

Publication type:

Article

Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200148

By:

Guo, Jing;
Liu, Yu;
Chen, Ping‐An;
Qiu, Xincan;
Wei, Huan;
Xia, Jiangnan;
Chen, Huajie;
Zeng, Zebing;
Liao, Lei;
Hu, Yuanyuan

Publication type:

Article

Luminescent High‐Mobility 2D Organic Semiconductor Single Crystals.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101281

By:

Fedorenko, Roman S.;
Kuevda, Alexey V.;
Trukhanov, Vasiliy A.;
Konstantinov, Vladislav G.;
Sosorev, Andrey Yu.;
Sonina, Alina A.;
Kazantsev, Maxim S.;
Surin, Nikolay M.;
Grigorian, Souren;
Borshchev, Oleg V.;
Ponomarenko, Sergey A.;
Paraschuk, Dmitry Yu.

Publication type:

Article

Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100619

By:

Chen, Di;
Li, Jiankun;
Wei, Zheng;
Wei, Xinjian;
Zhu, Maguang;
Liu, Jing;
Zhang, Guangyu;
Zhang, Zhiyong;
Chen, Jian‐Hao

Publication type:

Article

Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000978

By:

Tiwale, Nikhil;
Senanayak, Satyaprasad P.;
Rubio‐Lara, Juan;
Prasad, Abhinav;
Aziz, Atif;
Alaverdyan, Yury;
Welland, Mark E.

Publication type:

Article

Lateral Gating of 2D Electron Gas in Cross‐Sectional LaAlO3/SrTiO3.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202000068

By:

Ji, Fan;
Sharma, Pankaj;
Xin, Tongzheng;
Zhang, Dawei;
Liu, Ying;
Niu, Ranming;
Cairney, Julie M.;
Seidel, Jan

Publication type:

Article

Electrical and Elastic Properties of Individual Single‐Layer Nb4C3Tx MXene Flakes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901382

By:

Lipatov, Alexey;
Alhabeb, Mohamed;
Lu, Haidong;
Zhao, Shuangshuang;
Loes, Michael J.;
Vorobeva, Nataliia S.;
Dall'Agnese, Yohan;
Gao, Yu;
Gruverman, Alexei;
Gogotsi, Yury;
Sinitskii, Alexander

Publication type:

Article

Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900730

By:

Yu, Sanghyuck;
Cho, Yongjae;
Lim, June Yeong;
Kwon, Hyeokjae;
Jeong, Yeonsu;
Kim, Jungcheol;
Cheong, Hyeonsik;
Im, Seongil

Publication type:

Article

Application of Perovskite‐Structured Materials in Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900444

By:

Wu, Tingjun;
Pisula, Wojciech;
Rashid, Mohd Yusoff Abd;
Gao, Peng

Publication type:

Article

Omnidirectional Strain‐Independent Organic Transistors Integrated onto an Elastomer Template with a Spontaneously Formed Fingerprint‐Mimicking Microtopography.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900441

By:

Choi, Giheon;
Baek, Seolhee;
Oh, Seungtaek;
Cho, Hyewon;
Yoo, Heemang;
Choi, Yoonseuk;
Choi, Hyun Ho;
Lee, Hwa Sung

Publication type:

Article

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900427

By:

Zhao, Kai;
Gong, Yanfen;
Yan, Longsen;
He, Waner;
Wang, Dao;
Wang, Jiali;
Zou, Zhengmiao;
Luo, Chunlai;
Zhang, Aihua;
Fan, Zhen;
Gao, Jinwei;
Ning, Honglong;
Zhou, Guofu;
Lu, Xubing;
Liu, Junming

Publication type:

Article

Diketopyrrolopyrrole-Based Semiconducting Polymer with Both Hydrophobic Alkyl and Hydrophilic Tetraethylene Glycol Chains for Monolayer Transistor and Sensing Application.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 11, p. n/a, doi. 10.1002/aelm.201700120

By:

Yang, Si‐Fen;
Zhang, Xiao;
Chen, Peng‐Lei;
Liu, Zi‐Tong;
Tian, Jian‐Wu;
Zhang, Guan‐Xin;
Zhang, De‐Qing

Publication type:

Article

Engineering of Amorphous Polymeric Insulators for Organic Field-Effect Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 11, p. n/a, doi. 10.1002/aelm.201700157

By:

Jiang, Yingying;
Guo, Yunlong;
Liu, Yunqi

Publication type:

Article

39.4L: Late-News Paper: Vertical Organic Transistors (V-OFETs) for Truly Flexible AMOLED Displays.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 597, doi. 10.1002/sdtp.10181

By:

Furno, Mauro;
Kleemann, Hans;
Schwartz, Gregor;
Blochwitz‐Nimoth, Jan

Publication type:

Article

Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT.

Published in:

Applied Nanoscience, 2018, v. 8, n. 8, p. 1865, doi. 10.1007/s13204-018-0866-x

By:

Taouririt, Taki Eddine;
Meftah, Afak;
Sengouga, Nouredine

Publication type:

Article

Atomic Layer Deposition Alumina‐Mediated Graphene Transfer for Reduced Process Contamination.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 11, p. N.PAG, doi. 10.1002/pssr.201900424

By:

Shivayogimath, Abhay;
Eriksson, Lars;
Whelan, Patrick R.;
Mackenzie, David M. A.;
Luo, Birong;
Bøggild, Peter;
Booth, Timothy J.

Publication type:

Article

Field emission graphene-oxide-silicon field effect based photodetector.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 11, p. 656, doi. 10.1002/pssr.201510199

By:

Srisonphan, Siwapon;
Kanokbannakorn, Weerawoot;
Teerakawanich, Nithiphat

Publication type:

Article

Risk and Mobility: A Case Study of the Thin-Film Transistor Liquid-Crystal Display Industry in East Asia.

Published in:

2015

By:

Mayumi Tabata

Publication type:

Case Study

Recent Advances in the Core‐Annulation of Naphthalene Diimides.

Published in:

Chemistry - A European Journal, 2019, v. 25, n. 29, p. 7058, doi. 10.1002/chem.201806009

By:

Insuasty, Alberto;
Maniam, Subashani;
Langford, Steven J.

Publication type:

Article

A novel Field Effect Photodiode to control the output photocurrent and fast optical switching.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 3, p. 1, doi. 10.1007/s11082-022-03573-3

By:

Sharafi, Foad;
Orouji, Ali A.;
Soroosh, Mohammad

Publication type:

Article

Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor With Enhanced Band to Band Tunneling Current.

Published in:

Journal of Applied Research in Electrical Engineering, 2023, v. 2, n. 2, p. 206, doi. 10.22055/jaree.2024.44844.1082

By:

Ahangari, Zahra

Publication type:

Article

3.3 kV급 실리콘 카바이드 접합 장벽 쇼트키 다이오드용 접합 종료 확장과 P+ 가드링의 최적화.

Published in:

Journal of the Korea Institute of Information & Communication Engineering, 2025, v. 29, n. 4, p. 502, doi. 10.6109/jkiice.2025.29.4.502

By:

김선구;
유윤섭

Publication type:

Article

Fast Methods for Studying the Effect of Electrical Stress on SiO2 Dielectrics in Metal-Oxide-Semiconductor Field-Effect Transistors.

Published in:

Instruments & Experimental Techniques, 2023, v. 66, n. 6, p. 1095, doi. 10.1134/S0020441223060106

By:

Messaoud, Dhia Elhak;
Djezzar, Boualem;
Boubaaya, Mohamed;
Chenouf, Amel;
Benabdelmoumene, Abdelmadjid;
Zatout, Boumediene;
Zitouni, Abdelkader

Publication type:

Article

A Novel Energy Efficient and Process Immune Schmitt Trigger Circuit Design Using FinFET Technology.

Published in:

Indian Journal of Pure & Applied Physics, 2022, v. 60, n. 5, p. 387

By:

Mushtaq, Umayia;
Akram, Waseem;
Prasad, Dinesh;
Nagar, Bal Chand

Publication type:

Article

Conveniently Synthesized Butterfly‐Shaped Bitriphenylenes and their Application in Solution‐Processed Organic Field‐Effect Transistor Devices.

Published in:

European Journal of Organic Chemistry, 2020, v. 2020, n. 6, p. 662, doi. 10.1002/ejoc.201901470

By:

Ramakrishna, Jagarapu;
Karunakaran, Logesh;
Paneer, Shyam Vinod Kumar;
Chennamkulam, Ajith Mithun;
Subramanian, Venkatesan;
Dutta, Soumya;
Venkatakrishnan, Parthasarathy

Publication type:

Article

Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1222, doi. 10.1134/S106378261409022X

By:

Tsai, Jung-Hui;
Wu, You-Ren;
Chiang, Chung-Cheng;
Wang, Fu-Min;
Liu, Wen-Chau

Publication type:

Article

Recent Developments in Black Phosphorous Transistors: A Review.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 11, p. 6020, doi. 10.1007/s11664-021-09183-1

By:

Pon, Adhithan;
Bhattacharyya, Arkaprava;
Rathinam, Ramesh

Publication type:

Article

A Review of Graphene Nanoribbon Field-Effect Transistor Structures.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3169, doi. 10.1007/s11664-021-08859-y

By:

Lone, Sanna;
Bhardwaj, Anil;
Pandit, Amit Kant;
Gupta, Sumeet;
Mahajan, Shubham

Publication type:

Article

Effect of Ferroelectric Thickness Variation in Undoped HfO2-Based Negative-Capacitance Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6762, doi. 10.1007/s11664-019-07483-1

By:

Awadhiya, Bhaskar;
Kondekar, Pravin N.;
Meshram, Ashvinee Deo

Publication type:

Article

Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 944, doi. 10.1007/s11664-017-5849-2

By:

Han, Sangmoon;
Choi, Ilgyu;
Lee, Kwanjae;
Lee, Cheul-Ro;
Lee, Seoung-Ki;
Hwang, Jeongwoo;
Chung, Dong;
Kim, Jin

Publication type:

Article

Performance Evaluation and Design Considerations of Electrically Activated Drain Extension Tunneling GNRFET: A Quantum Simulation Study.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6508, doi. 10.1007/s11664-017-5686-3

By:

Ghoreishi, Seyed;
Yousefi, Reza;
Taghavi, Neda

Publication type:

Article

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3275, doi. 10.1007/s11664-013-2724-7

By:

Suarez, Ernesto;
Chan, Pik-Yiu;
Lingalugari, Murali;
Ayers, John;
Heller, Evan;
Jain, Faquir

Publication type:

Article

Enhancing Field-Effect Mobility of Conjugated Polymers Through Rational Design of Branched Side Chains.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 24, p. 3734, doi. 10.1002/adfm.201304231

By:

Fu, Boyi;
Baltazar, Jose;
Sankar, Ashwin Ravi;
Chu, Ping‐Hsun;
Zhang, Siyuan;
Collard, David M.;
Reichmanis, Elsa

Publication type:

Article

Optimization of the pulsed laser deposition process of In2O3 thin films for ferroelectric field effect device applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 2, p. 1659, doi. 10.1007/s10854-020-04935-x

By:

Xu, Meng;
Guo, Lei;
Yan, Jian-Min;
Xu, Zhi-Xue;
Wang, Hui;
Gao, Guan-Yin;
Zheng, Ren-Kui

Publication type:

Article

Cu-doped CdS thin films by chemical bath deposition and ion exchange.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 1722, doi. 10.1007/s10854-019-02690-2

By:

Diaz-Grijalva, O. I.;
Berman-Mendoza, D.;
Flores-Pacheco, A.;
López-Delgado, R.;
Ramos-Carrazco, A.;
Alvarez-Ramos, M. E.

Publication type:

Article

Spectrum adapted expectation-maximization algorithm for high-throughput peak shift analysis.

Published in:

Science & Technology of Advanced Materials, 2019, v. 20, n. 1, p. 733, doi. 10.1080/14686996.2019.1620123

By:

Matsumura, Tarojiro;
Nagamura, Naoka;
Akaho, Shotaro;
Nagata, Kenji;
Ando, Yasunobu

Publication type:

Article

Comparative Study of Surface Activation Steps for Thermally Grown Oxide Interface and Optimal Silanization.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 22, p. 1, doi. 10.1002/pssa.202300294

By:

Murugan, Divagar;
Tintelott, Marcel;
Amiri, Hesam;
Kasavetov, Martin;
Besedin, Denis;
Ingebrandt, Sven;
Vu, Xuan Thang;
Pachauri, Vivek

Publication type:

Article

Converting Ambipolar Double‐Walled Nanotube Bundles to Unipolar Carbon Nanotube Field‐Effect Transistor Devices by Inner Functionalization.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 12, p. 1, doi. 10.1002/pssa.202200669

By:

Chimowa, George;
Flahaut, Emmanuel;
Sodisetti, Venkateswara Rao;
Bhattacharyya, Somnath

Publication type:

Article

Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 11, p. 1, doi. 10.1002/pssa.202200526

By:

Meena, Sanju;
Sharma, Neetika;
Jogi, Jyotika

Publication type:

Article

Biosensor Based on Self‐Assembled Films of Graphene Oxide and Polyaniline Using a Field‐Effect Device Platform.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 13, p. 1, doi. 10.1002/pssa.202000747

By:

Oliveira, Danilo A.;
Molinnus, Denise;
Beging, Stefan;
Siqueira, José R.;
Schöning, Michael J.

Publication type:

Article

A 10 nm Asymmetric Graphene–Rhenium Disulfide Field‐Effect Transistor for High‐Speed Application.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 2, p. N.PAG, doi. 10.1002/pssa.201900450

By:

Chawla, Rashmi;
Singhal, Poonam;
Garg, Amit Kumar

Publication type:

Article

Microelectronic sensor for continuous glucose monitoring.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 3, p. 1, doi. 10.1007/s00339-019-2455-6

By:

Nascimento, Raphael Aparecido Sanches;
Mulato, Marcelo

Publication type:

Article

Temperature effect on RF/analog and linearity parameters in DMG FinFET.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 9, p. 1, doi. 10.1007/s00339-018-2068-5

By:

Saha, Rajesh;
Bhowmick, Brinda;
Baishya, Srimanta

Publication type:

Article

Study of ISFET sensitivity to pH variations using Silvaco TCAD.

Published in:

Telkomnika, 2024, v. 22, n. 5, p. 1257, doi. 10.12928/TELKOMNIKA.v22i5.25834

By:

Hani Senin, Nur Afiqah;
Mohd Zain, Anis Suhaila;
Salehuddin, Fauziyah;
Haroon, Hazura;
Dinar, Ahmed Musa;
Karim, Norwahidah Abdul

Publication type:

Article

SILICON ON RAISED INSULATOR FIELD EFFECT DIODE (SORI-FED) FOR ALLEVIATING SCALING PROBLEM IN FED.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2014, v. 28, n. 5, p. 1, doi. 10.1142/S0217979214500386

By:

VADIZADEH, MAHDI;
FATHIPOUR, MORTEZA;
DARVISH, GHAFAR

Publication type:

Article

First-principle study on the photoelectric properties of monolayer h-BN under different strain types.

Published in:

Journal of Molecular Modeling, 2024, v. 30, n. 2, p. 1, doi. 10.1007/s00894-024-05854-y

By:

Li, ShaoRong;
Wang, Hao;
Wang, ChengYue;
Zhao, PengXiang;
Zhang, ChengFu;
Qiao, DongWei

Publication type:

Article