Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector.

Dong, Jianqi; Zhang, Dongqi; Ma, Yi; You, Daotong; Chen, Jinping; Liu, Bin; Wang, Xingfu; Shi, Zengliang; Xu, Chunxiang

Nanostructure photodetectors, as the core component of optoelectronic devices, are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption devices. Herein, we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet photodetection. The radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias, indicating effective carriers' separation. And more, by integrating plasmonic effect, the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33×1012 Jones under 325 nm UV light irradiation. While the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V bias. The high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection process. This work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.

OPTOELECTRONIC devices; PHOTODETECTORS; GOLD nanoparticles; IRRADIATION; HOT carriers; CONDUCTION bands

Nano Research, 2024, Vol 17, Issue 6, p5569

1998-0124

Academic Journal

10.1007/s12274-024-6477-9