Works matching DE "SILICON carbide films"
Results: 66
Molecular dynamics simulation of the indentation of nanoscale films on a substrate.
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- Technical Physics Letters, 2016, v. 42, n. 6, p. 639, doi. 10.1134/S1063785016060274
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- Article
Determining polytype composition of silicon carbide films by UV ellipsometry.
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- Technical Physics Letters, 2016, v. 42, n. 2, p. 175, doi. 10.1134/S1063785016020280
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- Article
Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate.
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- Technical Physics Letters, 2014, v. 40, n. 12, p. 1114, doi. 10.1134/S1063785014120268
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- Article
Epitaxial silicon carbide on a 6″ silicon wafer.
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- Technical Physics Letters, 2014, v. 40, n. 1, p. 36, doi. 10.1134/S1063785014010088
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- Article
Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer.
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- Technical Physics, 2021, v. 66, n. 7, p. 869, doi. 10.1134/S1063784221060074
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- Article
Optical characterization of SiC films grown on Si(111).
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- Applied Physics B: Lasers & Optics, 2018, v. 124, n. 12, p. 1, doi. 10.1007/s00340-018-7103-x
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- Article
Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films.
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- Journal of Biomedical Materials Research, Part B: Applied Biomaterials, 2019, v. 107, n. 5, p. 1654, doi. 10.1002/jbm.b.34258
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- Article
Suspension Plasma Spraying of Sub-micron Silicon Carbide Composite Coatings.
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- Journal of Thermal Spray Technology, 2015, v. 24, n. 5, p. 817, doi. 10.1007/s11666-015-0242-2
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- Article
Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications.
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- Technical Physics Letters, 2023, v. 49, p. S319, doi. 10.1134/S1063785023010182
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- Article
The Mechanical Properties of a SiC Composite Coating on Graphite Produced by the Atom-Substitution Method.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 62, doi. 10.1134/S1063785022030038
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- Article
The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111) Heterostructure Grown by the Method of Atomic Substitution.
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- Technical Physics Letters, 2020, v. 46, n. 11, p. 1103, doi. 10.1134/S1063785020110243
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- Article
The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating <italic>n</italic>-SiC with High-Energy Argon Ions.
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- Technical Physics Letters, 2018, v. 44, n. 3, p. 229, doi. 10.1134/S1063785018030197
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- Article
Gas sensing properties of nanocrystalline silicon carbide films.
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- 2019
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- Letter
Comparison of Critical Current Scaling Behaviors in $$\hbox {MgB}_{2}$$ /SiC/Si Thin Films.
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- Journal of Low Temperature Physics, 2017, v. 187, n. 5/6, p. 565, doi. 10.1007/s10909-017-1777-z
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- Article
First-Principle Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction.
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- Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 8, p. 2303, doi. 10.1007/s10948-017-4041-5
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- Article
Influence of target grit count and sintering temperature on pulsed laser deposition of SiC thin films.
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- International Journal of Advanced Manufacturing Technology, 2016, v. 84, n. 5-8, p. 769, doi. 10.1007/s00170-014-5622-0
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- Article
Structural and Morphological Features of Carbon—Silicon-Carbide Fibers Based on Cellulose and Triethoxyvinylsilane.
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- Fibre Chemistry, 2018, v. 50, n. 2, p. 79, doi. 10.1007/s10692-018-9935-x
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- Article
Enhanced Crystallinity of SrTiO 3 Films on a Silicon Carbide Substrate: Structural and Microwave Characterization.
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- Applied Sciences (2076-3417), 2024, v. 14, n. 21, p. 9672, doi. 10.3390/app14219672
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- Article
On the Importance of Combined Scratch/Acoustic Emission Test Evaluation: SiC and SiCN Thin Films Case Study.
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- Coatings (2079-6412), 2018, v. 8, n. 5, p. 196, doi. 10.3390/coatings8050196
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- Article
Cold-Sprayed AZ91D Coating and SiC/AZ91D Composite Coatings.
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- Coatings (2079-6412), 2018, v. 8, n. 4, p. 122, doi. 10.3390/coatings8040122
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- Article
Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping.
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- Micromachines, 2022, v. 13, n. 12, p. 2043, doi. 10.3390/mi13122043
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- Article
Morphology Evolution of Nanoscale-Thick Au/Pd Bimetallic Films on Silicon Carbide Substrate.
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- Micromachines, 2020, v. 11, n. 4, p. 410, doi. 10.3390/mi11040410
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- Article
Degradation Mechanism of Pressure-Assisted Sintered Silver by Thermal Shock Test.
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- Energies (19961073), 2021, v. 14, n. 17, p. 5532, doi. 10.3390/en14175532
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- Article
Tuning Electrical Properties and Achieving High TCR in P-Doped a-Si<sub>x</sub>C<sub>1−x</sub>:H Films.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3946, doi. 10.1007/s11664-024-11166-x
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- Article
Deposition of silicon-carbon coatings from the plasma of a non-self-sustained arc discharge with a heated cathode.
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- Technical Physics, 2016, v. 61, n. 5, p. 690, doi. 10.1134/S106378421605008X
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- Article
CLAMPING LOSSES OF FOLDED- AND STRAIGHT-BEAM MEMS RESONATORS MADE FROM POLYCRYSTALLINE 3C-SiC FILMS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 6, p. 885, doi. 10.1142/S0217979211057980
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- Article
Toothbrushing alters the surface roughness and gloss of composite resin CAD/CAM blocks.
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- Dental Materials Journal, 2016, v. 35, n. 2, p. 225, doi. 10.4012/dmj.2015-228
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- Article
Batteries: Carbon-Based Anodes for Lithium Sulfur Full Cells with High Cycle Stability (Adv. Funct. Mater. 9/2014).
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- Advanced Functional Materials, 2014, v. 24, n. 9, p. 1283, doi. 10.1002/adfm.201470058
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- Article
Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 10, p. 1, doi. 10.1002/pssa.202200449
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- Article
Effect of the Surface Activation Parameter on the Fabrication Process of 4H–SiC Film on SiO<sub>2</sub>/Si Using the Crystal‐Ion‐Slicing Technique.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 3, p. 1, doi. 10.1002/pssa.202200028
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- Article
Strain Effect in Highly‐Doped n‐Type 3C‐SiC‐on‐Glass Substrate for Mechanical Sensors and Mobility Enhancement (Phys. Status Solidi A 24∕2018).
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 24, p. N.PAG, doi. 10.1002/pssa.201870054
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- Article
Evaluations of crystal defects of 3C-SiC.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1125, doi. 10.1002/pssa.201532675
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- Article
Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 12, p. 2756, doi. 10.1002/pssa.201330248
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- Article
Optical properties of a microcavity based on a nanocrystalline SiC film.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-018-1622-5
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- Article
Graphene Trails on PECVD Hydrogenated Amorphous Silicon Carbide Films SiC-a: H by Laser Writing at Room Temperature.
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- Journal of Integrated Circuits & Systems, 2020, v. 15, n. 2, p. 1, doi. 10.29292/jics.v15i2.169
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- Article
Top-Down Formation of Biocompatible SiC Nanotubes.
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- Semiconductors, 2024, v. 58, n. 3, p. 209, doi. 10.1134/S1063782624030035
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- Article
Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms.
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- Semiconductors, 2022, v. 56, n. 6, p. 321, doi. 10.1134/S1063782622070016
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- Article
The Influence of B 4 C Film Density on Damage Threshold Based on Monte Carlo Method for X-ray Mirror.
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- Materials (1996-1944), 2024, v. 17, n. 5, p. 1026, doi. 10.3390/ma17051026
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- Article
Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method.
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- Materials (1996-1944), 2023, v. 16, n. 8, p. 3115, doi. 10.3390/ma16083115
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- Article
NANTECHNOLOGY.
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- Advanced Materials & Processes, 2017, v. 175, n. 1, p. 16
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- Article
Low-energy Ar<sup>+</sup> and N<sup>+</sup> ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films.
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- PLoS ONE, 2021, v. 16, n. 10, p. 1, doi. 10.1371/journal.pone.0259216
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- Article
Erratum to: Synthesis and investigation of silicon carbide nanowires by HFCVD method.
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- Bulletin of Materials Science, 2016, v. 39, n. 4, p. 961, doi. 10.1007/s12034-016-1267-y
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Synthesis and investigation of silicon carbide nanowires by HFCVD method.
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- Bulletin of Materials Science, 2016, v. 39, n. 4, p. 953, doi. 10.1007/s12034-016-1183-1
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- Article
Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution.
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- Bulletin of Materials Science, 2015, v. 38, n. 5, p. 1333, doi. 10.1007/s12034-015-1018-5
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- Article
Separation of III-N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types.
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- Semiconductors, 2017, v. 51, n. 3, p. 396, doi. 10.1134/S1063782617030149
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- Article
Anharmonic Bloch oscillations of electrons in electrically biased superlattices.
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- Semiconductors, 2016, v. 50, n. 11, p. 1463, doi. 10.1134/S1063782616110117
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- Article
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base.
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- Semiconductors, 2016, v. 50, n. 3, p. 404, doi. 10.1134/S1063782616030155
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- Article
Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition.
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- Semiconductors, 2014, v. 48, n. 6, p. 711, doi. 10.1134/S1063782614060207
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- Article
Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 239, doi. 10.1007/s10854-019-02480-w
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- Article
Highly crystalline silicon carbide thin films grown at low substrate temperature by HWCVD technique.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1381, doi. 10.1007/s10854-014-2550-6
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- Article