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Investigation of deep levels in InGaAs channels comprising thin layers of InAs.
Published in:
Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 797, doi. 10.1007/s10854-007-9451-x
By:
- Dobbert, J.;
- Kunets, Vas. P.;
- Morgan, T. Al.;
- Guzun, D. I;
- Mazur, Yu. I.;
- Masselink, W. T.;
- Salamo, G. J.
Publication type:
Article
Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.
Published in:
Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 692, doi. 10.1007/s10854-007-9381-7
By:
- Strelchuk, V. V.;
- Mazur, Yu. I.;
- Wang, Zh. M.;
- Schmidbauer, M.;
- Kolomys, O. F.;
- Valakh, M. Ya.;
- Manasreh, M. O.;
- Salamo, G. J.
Publication type:
Article
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 75, doi. 10.15407/spqeo19.01.075
By:
- Iliash, S. A.;
- Kondratenko, S. V.;
- Yakovliev, A. S.;
- Kunets, Vas. P.;
- Mazur, Yu. I.;
- Salamo, G. J.
Publication type:
Article
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+ -GaN ohmic contacts.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 313
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Kapitanchuk, L. M.;
- Klad'ko, V. P.;
- Konakova, R. V.;
- Kuchuk, A. V.;
- Korostinskaya, T. V.;
- Pilipchuk, A. S.;
- Sheremet, V. N.;
- Mazur, Yu. I.;
- Ware, M. E.;
- Salamo, G. J.
Publication type:
Article
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 36
By:
- Streichuk, V. V.;
- Kladko, V. P.;
- Yefanov, O. M.;
- Kolomys, O. F.;
- Gudymenko, O. I.;
- Valakh, M. Ya.;
- Mazur, Yu. I.;
- Wang, Z. M.;
- Salamo, G. J.
Publication type:
Article
Diluted magnetic A1-xMnxB semiconductors.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 2, p. 119
By:
- Bryksa, V.P.;
- Tarasov, G.G.;
- Masselink, W.T.;
- Nolting, W.;
- Mazur, Yu I.;
- Salamo, G.J.
Publication type:
Article
Ferromagnetism induced in diluted A1--XMnXB semidconductors.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 43
By:
- Bryksa, V. P.;
- Tarasov, G. G.;
- Masselink, W. T.;
- Nolting, W.;
- Mazur, Yu. I.;
- Salamo, G. J.
Publication type:
Article
Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1555, doi. 10.1007/s11664-007-0258-6
By:
- Kladko, V. P.;
- Strelchuk, V. V.;
- Kolomys, A. F.;
- Slobodian, M. V.;
- Mazur, Yu. I.;
- Wang, Zh. M.;
- Kunets, Vas. P.;
- Salamo, G. J.
Publication type:
Article
Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.
Published in:
Nanoscale Research Letters, 2010, v. 5, n. 6, p. 991, doi. 10.1007/s11671-010-9590-5
By:
- Mazur, Yu. I.;
- Dorogan, V. G.;
- Marega, Jr., E.;
- Cesar, D. F.;
- Lopez-Richard, V.;
- Marques, G. E.;
- Zhuchenko, Z. Ya.;
- Tarasov, G. G.;
- Salamo, G. J.
Publication type:
Article
Unusual role of the substrate in droplet-induced GaAs/AlGaAs quantum-dot pairs.
Published in:
Physica Status Solidi - Rapid Research Letters, 2008, v. 2, n. 6, p. 281, doi. 10.1002/pssr.200802196
By:
- Wang, Zh. M.;
- Mazur, Yu. I.;
- Sablon, K. A.;
- Mishima, T. D.;
- Johnson, M. B.;
- Salamo, G. J.
Publication type:
Article
Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 127, doi. 10.1134/1.1852661
By:
- Valakh, M. Ya.;
- Strelchuk, V. V.;
- Kolomys, A. F.;
- Mazur, Yu. I.;
- Wang, Z. M.;
- Xiao, M.;
- Salamo, G. J.
Publication type:
Article
Optical absorption and photoluminescence of narrow-Gap Hg1−x−yCdxMnySe single crystals.
Published in:
Physica Status Solidi (B), 1996, v. 195, n. 2, p. 595, doi. 10.1002/pssb.2221950227
By:
- Mazur, Yu. I.;
- Tarasov, G. G.;
- Lavorik, S. R.;
- Tomm, J. W.;
- Kissel, H.;
- Hoerstel, W.
Publication type:
Article
Auger Recombination via Defects in Tellurium.
Published in:
Physica Status Solidi (B), 1990, v. 162, n. 2, p. 531, doi. 10.1002/pssb.2221620225
By:
- Mazur, Yu. I.;
- Rubo, Yu. G.;
- Snitko, O. V.;
- Strikha, M. V.
Publication type:
Article

Found: 13

Investigation of deep levels in InGaAs channels comprising thin layers of InAs.

Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures.

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n<sup>+</sup> -GaN ohmic contacts.

Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study.

Diluted magnetic A<sub>1-x</sub>Mn<sub>x</sub>B semiconductors.

Ferromagnetism induced in diluted A<sub>1--X</sub>Mn<sub>X</sub>B semidconductors.

Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.

Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.

Unusual role of the substrate in droplet-induced GaAs/AlGaAs quantum-dot pairs.

Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots.

Optical absorption and photoluminescence of narrow-Gap Hg<sub>1−x−y</sub>Cd<sub>x</sub>Mn<sub>y</sub>Se single crystals.

Auger Recombination via Defects in Tellurium.