Works matching DE "MOLECULAR beam epitaxy"
Results: 2155
Expanding the Perovskite Periodic Table to Include Chalcogenide Alloys with Tunable Band Gap Spanning 1.5–1.9 eV.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 41, p. 1, doi. 10.1002/adfm.202304575
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- Article
Selective Area Growth of PbTe Nanowire Networks on InP.
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- Advanced Functional Materials, 2022, v. 32, n. 51, p. 1, doi. 10.1002/adfm.202208974
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- Article
Room Temperature Triggered Single Photon Emission from Self‐Assembled GaN/AlN Quantum Dot in Nanowire.
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- Advanced Functional Materials, 2022, v. 32, n. 47, p. 1, doi. 10.1002/adfm.202208340
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- Article
Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> Thin Films (Adv. Funct. Mater. 28/2022).
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- Advanced Functional Materials, 2022, v. 32, n. 28, p. 1, doi. 10.1002/adfm.202202234
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- Article
Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures.
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- Advanced Functional Materials, 2022, v. 32, n. 21, p. 1, doi. 10.1002/adfm.202111470
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- Article
Quantitative Determination of Native Point‐Defect Concentrations at the ppm Level in Un‐Doped BaSnO<sub>3</sub> Thin Films.
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- Advanced Functional Materials, 2022, v. 32, n. 19, p. 1, doi. 10.1002/adfm.202113023
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- Article
Wafer‐Scale InN/In<sub>2</sub>S<sub>3</sub> Core–Shell Nanorod Array for Ultrafast Self‐Powered Photodetection.
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- Advanced Functional Materials, 2022, v. 32, n. 14, p. 1, doi. 10.1002/adfm.202110715
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- Article
Double Nanowires for Hybrid Quantum Devices.
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- Advanced Functional Materials, 2022, v. 32, n. 9, p. 1, doi. 10.1002/adfm.202107926
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- Article
Novel Polymorph of GaSe.
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- Advanced Functional Materials, 2021, v. 31, n. 48, p. 1, doi. 10.1002/adfm.202104965
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- Article
Making BaZrS<sub>3</sub> Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy.
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- Advanced Functional Materials, 2021, v. 31, n. 45, p. 1, doi. 10.1002/adfm.202105563
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- Article
Two‐Dimensional Silicene–Stanene Heterostructures by Epitaxy.
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- Advanced Functional Materials, 2021, v. 31, n. 30, p. 1, doi. 10.1002/adfm.202102797
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- Article
Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications.
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- Advanced Functional Materials, 2021, v. 31, n. 23, p. 1, doi. 10.1002/adfm.202010901
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- Article
Epitaxial Growth: Out‐Of‐Plane Metal Coordination for a True Solvent‐Free Building with Molecular Bricks: Dodging the Surface Ligand Effect for On‐Surface Vacuum Self‐Assembly (Adv. Funct. Mater. 20/2021).
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 20, p. 1, doi. 10.1002/adfm.202170142
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- Article
Recent Advances in 2D Rare Earth Materials.
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- Advanced Functional Materials, 2021, v. 31, n. 13, p. 1, doi. 10.1002/adfm.202008790
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- Article
Epitaxial Growth of Main Group Monoelemental 2D Materials.
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- Advanced Functional Materials, 2021, v. 31, n. 6, p. 1, doi. 10.1002/adfm.202006997
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- Article
Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures.
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- Advanced Functional Materials, 2020, v. 30, n. 46, p. 1, doi. 10.1002/adfm.202004450
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- Article
Sequencing and Welding of Molecular Single‐Crystal Optical Waveguides.
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- Advanced Functional Materials, 2020, v. 30, n. 35, p. 1, doi. 10.1002/adfm.202003443
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- Article
Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes.
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- Advanced Functional Materials, 2020, v. 30, n. 22, p. 1, doi. 10.1002/adfm.202001283
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- Article
Transport Properties of Se/As<sub>2</sub>Se<sub>3</sub> Nanolayer Superlattice Fabricated Using Rotational Evaporation.
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- Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201904758
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- Article
Interplay between Structural and Thermoelectric Properties in Epitaxial Sb<sub>2+</sub><sub>x</sub>Te<sub>3</sub> Alloys.
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- Advanced Functional Materials, 2019, v. 29, n. 2, p. N.PAG, doi. 10.1002/adfm.201805184
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- Article
Realization of a New Topological Crystalline Insulator and Lifshitz Transition in PbTe.
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- Advanced Functional Materials, 2018, v. 28, n. 37, p. 1, doi. 10.1002/adfm.201803188
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- Article
Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap.
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- Advanced Functional Materials, 2018, v. 28, n. 35, p. 1, doi. 10.1002/adfm.201802723
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- Article
A Stress‐Free and Textured GaP Template on Silicon for Solar Water Splitting.
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- Advanced Functional Materials, 2018, v. 28, n. 30, p. 1, doi. 10.1002/adfm.201801585
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- Article
2D or Not 2D: Strain Tuning in Weakly Coupled Heterostructures.
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- Advanced Functional Materials, 2018, v. 28, n. 14, p. 1, doi. 10.1002/adfm.201705901
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- Article
Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE.
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- Advanced Functional Materials, 2018, v. 28, n. 9, p. 1, doi. 10.1002/adfm.201702772
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- Article
Electron Transport Mechanism in GaN/AlGaN HEMT Structures.
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- Turkish Journal of Physics, 2003, v. 27, n. 3, p. 205
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- Article
Characteristics of MAPbI<sub>3</sub> Stacked on the GaN Nanowires‐On‐Glass.
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- Advanced Electronic Materials, 2024, v. 10, n. 10, p. 1, doi. 10.1002/aelm.202400095
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- Article
Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193
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- Article
ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103
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- Article
2D Mg‐Cu Intermetallic Compounds with Nontrivial Band Topology and Dirac Nodal Lines.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100927
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- Article
Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100777
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- Article
Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe<sub>2</sub>.
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- Advanced Electronic Materials, 2021, v. 7, n. 11, p. 1, doi. 10.1002/aelm.202100559
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- Article
Quantum Transport in Topological Surface States of Selectively Grown Bi<sub>2</sub>Te<sub>3</sub> Nanoribbons.
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- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000205
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- Article
Scalable Synthesis of the Transparent Conductive Oxide SrVO<sub>3</sub>.
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- Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900584
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- Article
Peeling off Nanometer‐Thick Ferromagnetic Layers and Their van der Waals Heterostructures.
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- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900345
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- Article
2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification.
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- Advanced Electronic Materials, 2019, v. 5, n. 3, p. N.PAG, doi. 10.1002/aelm.201800745
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- Article
Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition.
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- Laser Chemistry, 2010, v. 2010, p. 1, doi. 10.1155/2011/140976
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- Article
Solvability and convergence analysis of a transformed L1 finite difference scheme for TFMBE models without slope selection.
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- Journal of Difference Equations & Applications, 2024, v. 30, n. 3, p. 361, doi. 10.1080/10236198.2023.2290510
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- Article
Stress generation and relaxation in (Al,Ga)N/6 H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy.
- Published in:
- Technical Physics Letters, 2017, v. 43, n. 5, p. 443, doi. 10.1134/S106378501705008X
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- Article
Growth of YFeO/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties.
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- Technical Physics Letters, 2016, v. 42, n. 12, p. 1156, doi. 10.1134/S1063785016120075
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- Article
Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy.
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- Technical Physics Letters, 2016, v. 42, n. 12, p. 1163, doi. 10.1134/S1063785016120221
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- Publication type:
- Article
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range.
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- Technical Physics Letters, 2016, v. 42, n. 10, p. 1038, doi. 10.1134/S1063785016100266
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- Article
Normally off transistors based on in situ passivated AlN/GaN heterostructures.
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- Technical Physics Letters, 2016, v. 42, n. 7, p. 750, doi. 10.1134/S1063785016070312
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- Article
X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy.
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- Technical Physics Letters, 2016, v. 42, n. 4, p. 419, doi. 10.1134/S1063785016040234
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- Article
MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells.
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- Technical Physics Letters, 2015, v. 41, n. 9, p. 905, doi. 10.1134/S1063785015090229
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- Article
The initial stage of growth of self-induced GaN nanowires.
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- Technical Physics Letters, 2014, v. 40, n. 6, p. 471, doi. 10.1134/S1063785014060078
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- Publication type:
- Article
Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions.
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- Technical Physics Letters, 2014, v. 40, n. 6, p. 488, doi. 10.1134/S1063785014060091
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- Article
Measuring femtosecond lifetimes of free charge carriers in gallium arsenide.
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- Technical Physics Letters, 2014, v. 40, n. 6, p. 513, doi. 10.1134/S1063785014060224
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- Article
Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions.
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- Technical Physics Letters, 2013, v. 39, n. 12, p. 1114, doi. 10.1134/S1063785013120225
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- Article
Temperature-dependent integral exciton absorption in semiconducting GaAs crystals.
- Published in:
- Technical Physics Letters, 2012, v. 38, n. 10, p. 873, doi. 10.1134/S1063785012100136
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- Publication type:
- Article