Enhancing the Electrical Properties of Vertical OFETs Using a P(VDF-TrFE) Dielectric Layer.

Aziz, Fakhra; Anuar, Afiq; Ahmad, Zubair; Roslan, Nur Adilah; Makinudin, Abdullah Haaziq Ahmad; Bawazeer, Tahani M.; Alsenany, Nourah; Alsoufi, Mohammad S.; Supangat, Azzuliani

This work reports on the performance of vertical organic field effect transistors (VOFETs) fabricated using two dissimilar dielectric materials, namely poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(vinylidene fluoride) (PVDF). A comparison of the devices shows that integrating P(VDF-TrFE) enables the VOFET to exhibit significantly higher current of 0.10 mA with mobility of 6.874 × 10−4 m2 V−1 s−1 as compared with PVDF, which has a current of 0.034 mA and mobility equal to 4.24 × 10−5 m2 V−1 s−1. VOFET fabricated with a P(VDF-TrFE) dielectric layer shows a high current, high mobility, substantial ON/OFF ratio and low threshold voltage. The obtained results demonstrate that the VOFET fabricated with P(VDF-TrFE) dielectric layer allows smooth current flow between electrodes and appreciably improves the device characteristics.

DIELECTRIC materials; DIELECTRICS; DIFLUOROETHYLENE; THRESHOLD voltage; ORGANIC field-effect transistors; FERROELECTRIC polymers

Journal of Electronic Materials, 2020, Vol 49, Issue 2, p1362

0361-5235

Academic Journal

10.1007/s11664-019-07805-3