Works matching DE "INDIUM gallium phosphide"

Results: 23

High-temperature electric contacts for AlGaInP/GaInP photon-enhanced thermionic emission cathodes.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 14, p. 945, doi. 10.1049/el.2017.0755

By:

Girolami, M.;
Bellucci, A.;
Calvani, P.;
Dimroth, F.;
Trucchi, D. M.

Publication type:

Article

Photovoltaic modules with cylindrical waveguides in a system for the secondary concentration of solar radiation.

Published in:

Technical Physics, 2013, v. 58, n. 9, p. 1323, doi. 10.1134/S1063784213090041

By:

Andreev, V.;
Davidyuk, N.;
Ionova, E.;
Rumyantsev, V.

Publication type:

Article

Influence of InGaP/Ge heterostructure on diffusion of phosphorus in germanium during the formation of multiple solar cells.

Published in:

Technical Physics Letters, 2013, v. 39, n. 1, p. 27, doi. 10.1134/S1063785013010173

By:

Kobeleva, S.;
Anfimov, I.;
Yurchuk, S.;
Vygovskaya, E.;
Zhalnin, B.

Publication type:

Article

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode.

Published in:

Materials (1996-1944), 2017, v. 10, n. 8, p. 875, doi. 10.3390/ma10080875

By:

Hiroki Hamada

Publication type:

Article

InGaP 670-nm laser therapy combined with a hydroalcoholic extract of Solidago chilensis Meyen in burn injuries.

Published in:

Lasers in Medical Science, 2015, v. 30, n. 3, p. 1069, doi. 10.1007/s10103-014-1707-0

By:

Catarino, Helen;
Godoy, Natália;
Scharlack, Nayara;
Neves, Lia;
de Gaspi, Fernanda;
Esquisatto, Marcelo;
Amaral, Maria;
Mendonça, Fernanda;
Santos, Gláucia

Publication type:

Article

Effects of laser irradiation (670-nm InGaP and 830-nm GaAlAs) on burn of second-degree in rats.

Published in:

Lasers in Medical Science, 2014, v. 29, n. 5, p. 1685, doi. 10.1007/s10103-014-1573-9

By:

Chiarotto, Gabriela;
Neves, Lia;
Esquisatto, Marcelo;
Amaral, Maria;
Santos, Gláucia;
Mendonça, Fernanda

Publication type:

Article

A 20 GHz Low Phase Noise Push-Push VCO in InGaP GaAs HBT Technology.

Published in:

Microwave Journal, 2018, v. 61, n. 5, p. 102

By:

Jincan Zhang;
Bo Liu;
Leiming Zhang;
Ligona Sun;
Yuming Zhang;
Hongliang Lu;
Yimen Zhang

Publication type:

Article

Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their structural and morphological properties.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1087, doi. 10.1134/S1063782617080280

By:

Seredin, P.;
Lenshin, A.;
Khudyakov, Yu.;
Arsentyev, I.;
Kaliuzhny, N.;
Mintairov, S.;
Nikolaev, D.;
Prutskij, Tatiana

Publication type:

Article

Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1571, doi. 10.1134/S1063782615120180

By:

Samartsev, I.;
Aleshkin, V.;
Dikareva, N.;
Dubinov, A.;
Zvonkov, B.;
Kolpakov, D.;
Nekorkin, S.

Publication type:

Article

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1361, doi. 10.1134/S1063782615100279

By:

Wu, Yi-Chen;
Tsai, Jung-Hui;
Chiang, Te-Kuang;
Wang, Fu-Min

Publication type:

Article

Site-Controlled Growth of Single InP QDs.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1095, doi. 10.1134/S1063782615080230

By:

Vlasov, A.;
Mintairov, A.;
Kalyuzhnyy, N.;
Mintairov, S.;
Salii, R.;
Denisyuk, A.;
Babunts, R.

Publication type:

Article

Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1217, doi. 10.1134/S1063782614090024

By:

Andreev, V.;
Grebenshchikova, E.;
Dmitriev, P.;
Ilinskaya, N.;
Kalinovsky, V.;
Kontrosh, E.;
Malevskaya, A.;
Usikova, A.

Publication type:

Article

Photoelectric determination of the series resistance of multijunction solar cells.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143

By:

Mintairov, M.;
Evstropov, V.;
Kalyuzhnyi, N.;
Mintairov, C.;
Timoshina, N.;
Shvartz, M.;
Lantratov, V.

Publication type:

Article

Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers.

Published in:

Semiconductors, 2012, v. 46, n. 4, p. 514, doi. 10.1134/S1063782612040227

By:

Tsai, Jung-Hui;
Ye, Sheng-Shiun;
Guo, Der-Feng;
Lour, Wen-Shiung

Publication type:

Article

Analytical Modeling of Dual-Junction Tandem Solar Cells Based on an InGaP/GaAs Heterojunction Stacked on a Ge Substrate.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 6, p. 4107, doi. 10.1007/s11664-019-07180-z

By:

Bouzid, F.;
Pezzimenti, F.;
Dehimi, L.;
Della Corte, F. G.;
Hadjab, M.;
Hadj Larbi, A.

Publication type:

Article

Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3585, doi. 10.1007/s11664-018-6203-z

By:

Abbasian, Sobhan;
Sabbaghi-Nadooshan, Reza

Publication type:

Article

Transient characteristics of the InGaP-GaAs-InGaAs-GaAs transistor laser.

Published in:

Optical & Quantum Electronics, 2013, v. 45, n. 6, p. 543, doi. 10.1007/s11082-013-9680-6

By:

Habib, Md;
Ullah, Saeed;
Rafique, Shahida

Publication type:

Article

Evaluation of subcell power conversion efficiencies of radiation-damaged triple-junction solar cells using photoluminescence decays.

Published in:

Progress in Photovoltaics, 2017, v. 25, n. 12, p. 1005, doi. 10.1002/pip.2912

By:

Tex, David M.;
Ihara, Toshiyuki;
Nakamura, Tetsuya;
Imaizumi, Mitsuru;
Ohshima, Takeshi;
Kanemitsu, Yoshihiko

Publication type:

Article

Effect of Sb on the quantum efficiency of GaInP solar cells.

Published in:

Progress in Photovoltaics, 2016, v. 24, n. 8, p. 1116, doi. 10.1002/pip.2777

By:

Barrigón, Enrique;
Barrutia, Laura;
Ochoa, Mario;
Rey‐Stolle, Ignacio;
Algora, Carlos

Publication type:

Article

InGaP//GaAs//c-Si 3-junction solar cells employing spectrum-splitting system.

Published in:

Progress in Photovoltaics, 2016, v. 24, n. 7, p. 1016, doi. 10.1002/pip.2753

By:

Kang, Dong‐Won;
Takiguchi, Yuki;
Sichanugrist, Porponth;
Konagai, Makoto

Publication type:

Article

Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells.

Published in:

Progress in Photovoltaics, 2015, v. 23, n. 7, p. 874, doi. 10.1002/pip.2501

By:

Espinet‐González, P.;
Rey‐Stolle, I.;
Ochoa, M.;
Algora, C.;
García, I.;
Barrigón, E.

Publication type:

Article

Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement.

Published in:

Progress in Photovoltaics, 2013, v. 21, n. 3, p. 344, doi. 10.1002/pip.1215

By:

Lim, Swee Hoe;
Li, Jing‐Jing;
Steenbergen, Elizabeth H.;
Zhang, Yong‐Hang

Publication type:

Article

An Antireflection Coating of a Germanium Subcell in GaInP/GaAs/Ge Solar Cells.

Published in:

Technical Physics Letters, 2018, v. 44, n. 11, p. 1042, doi. 10.1134/S1063785018110263

By:

Mintairov, S. A.;
Emel'yanov, V. M.;
Kalyuzhnyi, N. A.;
Andreev, V. M.

Publication type:

Article