Works matching DE "SEMICONDUCTOR-metal boundaries"
Results: 127
Chemical Doping Effects on CVD‐Grown Multilayer MoSe<sub>2</sub> Transistor.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 6, p. 1, doi. 10.1002/aelm.201700639
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- Article
Electrical properties of metal-semiconductor multilayers with amorphous structure.
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- Technical Physics Letters, 2006, v. 32, n. 3, p. 262, doi. 10.1134/S1063785006030266
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- Article
Non-Alloy Cr/Au Ohmic Contacts in the Technology of Planar Beam-Lead GaAs p–i–n Diodes.
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- Technical Physics Letters, 2005, v. 31, n. 7, p. 581, doi. 10.1134/1.2001060
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- Article
Peculiarities in the Mechanism of Current Flow through an Ohmic Contact to Gallium Phosphide.
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- Technical Physics Letters, 2004, v. 30, n. 10, p. 806, doi. 10.1134/1.1813716
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- Article
Effect of the Metal–Semiconductor Phase Transition on the Capacitance of an Aluminum–Dielectric–Vanadium Dioxide Heterostructure.
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- Technical Physics Letters, 2001, v. 27, n. 11, p. 924, doi. 10.1134/1.1424394
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- Article
Periodic Breakdown of a Gas Layer in the Metal–Gaseous Dielectric–Insulating Semiconductor–Metal Structure under Stationary Illumination Conditions.
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- Technical Physics Letters, 2000, v. 26, n. 2, p. 122, doi. 10.1134/1.1262762
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- Article
Optical amplification in a planar multichannel Mach–Zehnder interferometer based on metal–semiconductor–metal structures.
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- Technical Physics Letters, 1998, v. 24, n. 1, p. 49, doi. 10.1134/1.1261989
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- Article
Design of a Novel Sampling Pulse Generator for Ultra-Wideband Through-Wall Radar.
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- Telecommunication Engineering, 2014, v. 54, n. 9, p. 1280, doi. 10.3969/j.issn.1001-893x.2014.09.020
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- Article
A Comparative Study of Gold Impregnation Methods for Obtaining Metal/Semiconductor Nanophotocatalysts: Direct Turkevich, Inverse Turkevich, and Progressive Heating Methods.
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- Catalysts (2073-4344), 2018, v. 8, n. 4, p. 161, doi. 10.3390/catal8040161
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- Article
A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface.
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- Applied Physics B: Lasers & Optics, 2011, v. 102, n. 1, p. 197, doi. 10.1007/s00340-010-4144-1
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- Article
Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS<sub>2</sub> transistors.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209
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- Article
Analysis of the actual schottky-barrier contact model in a wide temperature and bias-voltage range.
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- Radiophysics & Quantum Electronics, 2004, v. 47, n. 9, p. 688, doi. 10.1007/s11141-005-0006-9
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- Article
Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO film.
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- Journal of Materials Science, 2016, v. 51, n. 17, p. 8233, doi. 10.1007/s10853-016-0098-y
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- Article
Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures.
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- Russian Physics Journal, 2012, v. 55, n. 2, p. 180, doi. 10.1007/s11182-012-9792-7
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- Article
Nonlinear Effects in MSM Structures Based on AgSSe.
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- Journal of Engineering Physics & Thermophysics, 2015, v. 88, n. 4, p. 1030, doi. 10.1007/s10891-015-1281-8
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- Article
Construction of Mo/Mo<sub>2</sub>C@C modified ZnIn<sub>2</sub>S<sub>4</sub> Schottky junctions for efficient photo-thermal assisted hydrogen evolution.
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- Materials Reports: Energy, 2023, v. 3, n. 4, p. 1, doi. 10.1016/j.matre.2023.100234
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- Article
Metal-Semiconductor Schottky Barrier Junctions and their Applications (Book Review).
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- 1985
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- Publication type:
- Book Review
Electrical Characterization of Pd-Doped CMAS-TiO<sub>2</sub> Glass-Ceramics.
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- International Journal of Applied Glass Science, 2014, v. 5, n. 3, p. 217, doi. 10.1111/ijag.12086
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- Article
Photoemission Microscopy Investigation of Buried p–n GaAs Homojunctions and Al/n-GaAs Schottky Barriers.
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- Surface Review & Letters, 2002, v. 9, n. 1, p. 249, doi. 10.1142/S0218625X02002154
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- Article
Microscopic Understanding and Control of Surfaces and Interfaces of Compound Semiconductors for Mesoscopic Devices.
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- Surface Review & Letters, 2000, v. 7, n. 5/6, p. 583, doi. 10.1142/S0218625X0000066X
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- Article
A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene.
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- Nature Physics, 2013, v. 9, n. 1, p. 49, doi. 10.1038/nphys2487
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- Article
Investigation of the Schottky barriers in aluminum — vitreous semiconductor contacts.
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- Russian Physics Journal, 2005, v. 48, n. 10, p. 1080, doi. 10.1007/s11182-006-0028-6
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- Article
A model of the intimate metal-semiconductor Schottky-barrier contact.
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- Russian Physics Journal, 2005, v. 48, n. 10, p. 1085, doi. 10.1007/s11182-006-0029-5
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- Article
On the Current-Voltage Characteristic of an Ideal Metal-Semiconductor Schottky-Barrier Contact.
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- Russian Physics Journal, 2005, v. 48, n. 3, p. 312, doi. 10.1007/s11182-005-0125-y
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- Article
Measurement of the Metal-Semiconductor Contact Resistance and Control of the Specific Resistance of Semiconductor Films.
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- Russian Physics Journal, 2003, v. 46, n. 7, p. 726, doi. 10.1023/B:RUPJ.0000008205.28283.7d
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- Article
Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 11, p. 1, doi. 10.1049/el.2013.0765
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- Article
CO-Sensing Properties of Diode-Type Gas Sensors Employing Anodized Titania and Noble-Metal Electrodes under Hydrogen Atmosphere.
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- Chemosensors, 2018, v. 6, n. 1, p. 7, doi. 10.3390/chemosensors6010007
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- Article
Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer.
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- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 85, doi. 10.1142/S0129156407004278
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- Article
OHMIC CONTACTS TO SIC.
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- International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 781, doi. 10.1142/S0129156405003429
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- Article
DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 241, doi. 10.1142/S012915640400296X
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- Article
Fabrication of Nickel Contacts for Mg<sub>2</sub>Si Based Thermoelectric Generators via an Induction Assisted Rapid Monoblock Sintering Technique.
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- Journal of Electronic Materials, 2019, v. 48, n. 3, p. 1754, doi. 10.1007/s11664-018-06889-7
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- Article
Non-destructive Detection of Screw Dislocations and the Corresponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics.
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- Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5099, doi. 10.1007/s11664-018-6414-3
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- Article
Performance Analysis of a Pt/ n-GaN Schottky Barrier UV Detector.
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- Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6563, doi. 10.1007/s11664-017-5696-1
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- Article
Ohmic Contact of Au/Mo on HgCdTe.
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- Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2802, doi. 10.1007/s11664-016-4375-y
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- Publication type:
- Article
Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy.
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- Journal of Electronic Materials, 2011, v. 40, n. 11, p. 2179, doi. 10.1007/s11664-011-1741-7
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- Article
Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1
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- Article
Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.
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- Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3
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- Article
Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu Multilayer Structures as Schottky Metals for GaAs Diodes.
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- Journal of Electronic Materials, 2004, v. 33, n. 7, p. L15, doi. 10.1007/s11664-004-0251-2
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- Article
Conversion of environmental heat to electric energy in the metal-dielectric-semiconductor-metal system.
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- Technical Physics, 2013, v. 58, n. 11, p. 1619, doi. 10.1134/S1063784213110170
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- Article
Mechanism of current flow in alloyed ohmic In/GaAs contacts.
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- Technical Physics, 2007, v. 52, n. 2, p. 285, doi. 10.1134/S1063784207020235
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- Article
Hysteresis Loop Construction for the Metal–Semiconductor Phase Transition in Vanadium Dioxide Films.
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- Technical Physics, 2002, v. 47, n. 9, p. 1134, doi. 10.1134/1.1508078
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- Article
Nonequilibrium Semiconductor–Metal Phase Transition Due to Self-Heating.
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- Technical Physics, 2002, v. 47, n. 7, p. 932, doi. 10.1134/1.1495063
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- Article
Transition Processes Occurring under Continuous and Stepwise Heating of GaAs Surface-Barrier Structures.
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- Technical Physics, 2001, v. 46, n. 9, p. 1128, doi. 10.1134/1.1404165
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- Article
Semiconductor–metal phase transition under a strain induced by a spherical indenter.
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- Technical Physics, 1998, v. 43, n. 3, p. 314, doi. 10.1134/1.1258916
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- Article
The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode.
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- Acta Physica Polonica: A, 2015, v. 128, n. 2B, p. B-170, doi. 10.12693/APhysPolA.128.B-170
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- Article
A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES.
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- Progress in Electromagnetics Research, 2013, v. 137, p. 407, doi. 10.2528/pier13011706
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- Article
THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES.
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- Modern Physics Letters B, 2008, v. 22, n. 26, p. 2529, doi. 10.1142/S0217984908017060
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- Article
HIGH SENSITIVE HYDROGEN SENSOR BY Pd/OXIDE/InGaP MOS STRUCTURE.
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- Modern Physics Letters B, 2006, v. 20, n. 28, p. 1781, doi. 10.1142/S0217984906011888
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- Article
STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY.
- Published in:
- Modern Physics Letters B, 2006, v. 20, n. 28, p. 1825, doi. 10.1142/S0217984906012110
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- Article
TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2008, v. 22, n. 14, p. 2309, doi. 10.1142/S0217979208039496
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- Article