Works matching DE "STRAINED silicon"
Results: 10
Mathematical analysis of GaN high electron mobility transistor false turn-on phenomenon.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 19, p. 21, doi. 10.1049/el.2017.2225
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- Article
Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2018, v. 8, n. 1, p. 421, doi. 10.11591/ijece.v8i1.pp421-428
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- Article
Cover Picture: Chemisorption of a Strained but Flexible Molecule: Cyclooctyne on Si(001) (Chem. Eur. J. 23/2017).
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- Chemistry - A European Journal, 2017, v. 23, n. 23, p. 5388, doi. 10.1002/chem.201700692
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Growth of 1-eV GaNAsSb-based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios.
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- Progress in Photovoltaics, 2016, v. 24, n. 3, p. 340, doi. 10.1002/pip.2705
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Analytical Modeling of Threshold Voltage of Stacked Triple-Material-Gate (TMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs.
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- Journal of Active & Passive Electronic Devices, 2014, v. 9, n. 2/3, p. 235
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Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2092, doi. 10.1007/s11664-016-4387-7
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In-Depth Design and Simulation Analysis of Vertical Strained Impact Ionization MOSFET (VESIMOS).
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- International Journal of Simulation: Systems, Science & Technology, 2014, v. 15, n. 2, p. 32, doi. 10.5013/IJSSST.a.15.02.05
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AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600555
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Nanomembrane-based materials for Group IV semiconductor quantum electronics.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04218
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Germanium Based Field-Effect Transistors: Challenges and Opportunities.
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- Materials (1996-1944), 2014, v. 7, n. 3, p. 2301, doi. 10.3390/ma7032301
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- Article