Works matching IS 03615235 AND DT 2015 AND VI 44 AND IP 5

Results: 20

AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1263, doi. 10.1007/s11664-014-3474-x

By:

Wille, Ada;
Yacoub, Hady;
Debald, Arne;
Kalisch, Holger;
Vescan, Andrei

Publication type:

Article

Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1268, doi. 10.1007/s11664-014-3497-3

By:

Wang, H.;
Dudley, M.;
Wu, F.;
Yang, Y.;
Raghothamachar, B.;
Zhang, J.;
Chung, G.;
Thomas, B.;
Sanchez, E.K.;
Mueller, S.G.;
Hansen, D.;
Loboda, M.J.

Publication type:

Article

Thermal Resistance Extraction of AlGaN/GaN Depletion-Mode HEMTs on Diamond.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1275, doi. 10.1007/s11664-014-3515-5

By:

Wu, Jianzhi;
Min, Jie;
Lu, Wei;
Yu, Paul.

Publication type:

Article

Effect of Diffusion Control Layer on Reverse Al-Induced Layer Exchange Process for High-Quality Ge/Al/Glass Structure.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1377, doi. 10.1007/s11664-014-3521-7

By:

Nakazawa, K.;
Toko, K.;
Suemasu, T.

Publication type:

Article

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1293, doi. 10.1007/s11664-014-3536-0

By:

Wu, Fangzhen;
Wang, Huanhuan;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gil;
Zhang, Jie;
Thomas, Bernd;
Sanchez, Edward;
Mueller, Stephan;
Hansen, Darren;
Loboda, Mark;
Zhang, Lihua;
Su, Dong;
Kisslinger, Kim;
Stach, Eric

Publication type:

Article

Defect-Related Luminescence in Undoped GaN Grown by HVPE.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4

By:

Reshchikov, M.A.;
Usikov, A.;
Helava, H.;
Makarov, Yu.

Publication type:

Article

Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1321, doi. 10.1007/s11664-014-3542-2

By:

Simingalam, Sina;
Brill, Gregory;
Wijewarnasuriya, Priyalal;
Rao, Mulpuri

Publication type:

Article

Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1332, doi. 10.1007/s11664-014-3565-8

By:

Hainey, Mel;
Eichfeld, Sarah;
Shen, Haoting;
Yim, Joanne;
Black, Marcie;
Redwing, Joan

Publication type:

Article

Large-Area MOCVD Growth of GaO in a Rotating Disc Reactor.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1357, doi. 10.1007/s11664-014-3566-7

By:

Sbrockey, Nick;
Salagaj, Thomas;
Coleman, Elane;
Tompa, Gary;
Moon, Youngboo;
Kim, Myung

Publication type:

Article

Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001).

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1338, doi. 10.1007/s11664-014-3583-6

By:

O'Brien, William;
Qi, Meng;
Yan, Lifan;
Stephenson, Chad;
Protasenko, Vladimir;
Xing, Huili;
Millunchick, Joanna;
Wistey, Mark

Publication type:

Article

Comparison of Gas Sensors Based on Oxygen Plasma-Treated Carbon Nanotube Network Films with Different Semiconducting Contents.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1344, doi. 10.1007/s11664-014-3586-3

By:

Ham, Seung;
Hong, Hyun;
Kim, Jin;
Kim, Jong;
Kim, Ki;
Park, Chan;
Min, Nam

Publication type:

Article

Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1351, doi. 10.1007/s11664-014-3587-2

By:

Chiba, Hiroshi;
Mori, Tatsuya;
Kawashima, Tomoyuki;
Washio, Katsuyoshi

Publication type:

Article

Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1306, doi. 10.1007/s11664-014-3616-1

By:

Mahadik, N.A.;
Stahlbush, R.E.

Publication type:

Article

Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1361, doi. 10.1007/s11664-015-3624-9

By:

Dodd, Linzi;
Shenton, Samantha;
Gallant, Andrew;
Wood, David

Publication type:

Article

Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1327, doi. 10.1007/s11664-015-3625-8

By:

Renteria, E.;
Muniz, A.;
Addamane, S.;
Shima, D.;
Hains, C.;
Balakrishnan, G.

Publication type:

Article

Novel Materials with Effective Super Dielectric Constants for Energy Storage.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1367, doi. 10.1007/s11664-015-3641-8

By:

Cortes, Francisco;
Phillips, Jonathan

Publication type:

Article

Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1300, doi. 10.1007/s11664-015-3658-z

By:

Ekinci, Huseyin;
Kuryatkov, Vladimir;
Mauch, Daniel;
Dickens, James;
Nikishin, Sergey

Publication type:

Article

Effects of Lattice Relaxation on Composition and Morphology in Strained InGaAsSb Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1311, doi. 10.1007/s11664-015-3662-3

By:

Meyer, Charles;
Cole, Nicholas;
Matzat, Corey;
Cheng, Emily;
Triplett, Gregory

Publication type:

Article

Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1287, doi. 10.1007/s11664-015-3677-9

By:

Artemiev, Dmitry;
Orlova, Tatiana;
Bougrov, Vladislav;
Odnoblyudov, Maxim;
Romanov, Alexei

Publication type:

Article

Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1255, doi. 10.1007/s11664-014-3456-z

By:

Rishinaramangalam, Ashwin;
Ul Masabih, Saadat;
Fairchild, Michael;
Wright, Jeremy;
Shima, Darryl;
Balakrishnan, Ganesh;
Brener, Igal;
Brueck, S.R.J.;
Feezell, Daniel

Publication type:

Article