Works matching IS 03615235 AND DT 2014 AND VI 43 AND IP 9
Results: 86
Effects of NiO Layer on Anisotropic Magnetoresistance and Sensitivity of NiFe Films.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3493, doi. 10.1007/s11664-014-3174-6
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Electrical Properties and Current Transport Mechanisms of the Au/ n-GaN Schottky Structure with Solution- Processed High- k BaTiO Interlayer.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3499, doi. 10.1007/s11664-014-3177-3
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Theoretical Investigations of Half-Metallicity in Cr-Substituted GaN, GaP, GaAs, GaSb Material Systems.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3169, doi. 10.1007/s11664-014-3181-7
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Kinetic Analysis of Spontaneous Whisker Growth on Pre-treated Surfaces with Weak Oxide.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3290, doi. 10.1007/s11664-014-3182-6
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Structural and Optical Characterizations of Electrochemically Grown Connected and Free-Standing TiO Nanotube Array.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3229, doi. 10.1007/s11664-014-3183-5
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Synthesis and Electrochemical Properties of LiNiCoMnO Cathode Material.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3508, doi. 10.1007/s11664-014-3184-4
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Evolution of Structural, Optical and Electrical Characteristics of Spin-Coated CdO Thin Films with the Gelation State of the Sol-Gel.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3514, doi. 10.1007/s11664-014-3186-2
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Improving the Power Conversion Efficiency of Organic Solar Cell by Blending with CdSe/ZnS Core-Shell Quantum Dots.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3077, doi. 10.1007/s11664-014-3187-1
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Effects of Partial Replacement of Iron with Tungsten on Microstructure, Electrical, Magnetic and Humidity Properties of Copper-Zinc Ferrite Material.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3522, doi. 10.1007/s11664-014-3190-6
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Chip to Chip Bonding Using Cu Bumps Capped with Thin Sn Layers and the Effect of Microstructure on the Shear Strength of Joints.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3296, doi. 10.1007/s11664-014-3191-5
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Dielectric and Impedance Spectroscopy of ZnWO Electroceramics.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3527, doi. 10.1007/s11664-014-3198-y
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Effect of Pd Interlayer on Electrochemical Properties of ENIG Surface Finish in 3.5 wt.% NaCl Solution.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3307, doi. 10.1007/s11664-014-3203-5
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Low-Temperature Curable Photo-Active Anisotropic Conductive Films (PA-ACFs).
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3236, doi. 10.1007/s11664-014-3209-z
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Evaluation of Die-Attach Bonding Using High-Frequency Ultrasonic Energy for High-Temperature Application.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3317, doi. 10.1007/s11664-014-3210-6
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High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3177, doi. 10.1007/s11664-014-3211-5
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Synthesis and Luminescence of BaWO:Ln (Ln = Eu, Tb, and Dy) Powders.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3534, doi. 10.1007/s11664-014-3215-1
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Structural and Electrical Properties of Mechanothermally Synthesized NiFeO Nanoceramics.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3539, doi. 10.1007/s11664-014-3216-0
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Synthesis and Characterization of Li-Modified AgTaO.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3550, doi. 10.1007/s11664-014-3219-x
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Preparation and Thermoelectric Properties of Yttrium-Doped BiTe Flower-Like Nanopowders.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3162, doi. 10.1007/s11664-014-3220-4
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Long-Term Structural Instabilities in Undoped and Nitrogen-Doped GeSbTe Films.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3082, doi. 10.1007/s11664-014-3221-3
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Effect of Gd Ion Insertion on the Crystal Structure, Photoluminescence, and Dielectric Properties of o-Mullite Nanoparticles.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3559, doi. 10.1007/s11664-014-3222-2
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The Isothermal Section of the Sn-Sb-Ni Ternary System at 270°C.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3324, doi. 10.1007/s11664-014-3223-1
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Improvement of Thermoelectric Performance for Sb-Doped SnO Ceramics Material by Addition of Cu as Sintering Additive.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3567, doi. 10.1007/s11664-014-3227-x
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Synthesis of Size-Controlled SrFeO Using Modified Spray Pyrolysis-Calcination Method and Their Magnetic Properties.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3574, doi. 10.1007/s11664-014-3228-9
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Investigations on the Structure, Morphology, and Optoelectronic Properties of Chemically Deposited ZnSe Thin Films: The Effect of Solution pH.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3155, doi. 10.1007/s11664-014-3229-8
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Joining of Broken Multiwalled Carbon Nanotubes Using an Electron Beam-Induced Deposition (EBID) Technique.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3283, doi. 10.1007/s11664-014-3230-2
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Sn-Zn/Ni-Co Interfacial Reactions at 250°C.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3333, doi. 10.1007/s11664-014-3232-0
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Effect of CuO Addition on Microwave Dielectric Properties of 0.80Sm(MgTi)O-0.20CaSrTiO Ceramics.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3582, doi. 10.1007/s11664-014-3234-y
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Interfacial Reaction Between Sn3.0Ag0.5Cu Solder and ENEPIG for Fine Pitch BGA by Stencil Printing.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3341, doi. 10.1007/s11664-014-3236-9
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Thermoelectric Properties of CdTeCl Material Prepared by Spark Plasma Sintering Method.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3087, doi. 10.1007/s11664-014-3237-8
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Improved Hydrogen Capping Effect in n-Type Crystalline Silicon Solar Cells by SiN(Si-Rich)/SiN(N-Rich) Stacked Passivation.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3191, doi. 10.1007/s11664-014-3244-9
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Buckling and Delamination of Ti/Cu/Si Thin Film During Annealing.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3351, doi. 10.1007/s11664-014-3238-7
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Emission Properties of Sn and Sm Co-doped Barium Phosphate Glass.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3588, doi. 10.1007/s11664-014-3240-0
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Phase Evolution in the AuCu/Sn System by Solid-State Reactive Diffusion.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3357, doi. 10.1007/s11664-014-3241-z
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Improvement of the Luminescence of Red LaPO:Eu Nanophosphors for a Near-UV LED.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3593, doi. 10.1007/s11664-014-3242-y
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Donor-Acceptor-Donor Modular Small Organic Molecules Based on the Naphthalene Diimide Acceptor Unit for Solution-Processable Photovoltaic Devices.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3243, doi. 10.1007/s11664-014-3243-x
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Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3184, doi. 10.1007/s11664-014-3239-6
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Enhancement of Processability and Electrical Resistance by Use of Ag-Based Composite Inks Containing Ultrafine SAC305 Alloy Nanoparticles.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3372, doi. 10.1007/s11664-014-3245-8
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Effect of Adding Zinc Oxide Particles to the Anode Catalyst Layer on the Performance of a Proton-Exchange Membrane Fuel Cell.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3601, doi. 10.1007/s11664-014-3246-7
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Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3196, doi. 10.1007/s11664-014-3247-6
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Photocurrent Spectroscopic Study of Temperature-Dependent Photoresponse and Valence-Band Splitting in MnAlS Layers.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3092, doi. 10.1007/s11664-014-3248-5
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Synthesis and Physicochemical Properties of Yttrium Oxide Doped with Neodymium and Lanthanum.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3611, doi. 10.1007/s11664-014-3250-y
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Evaluation the Impact of Annealing on Phase Evolution, Microstructure, and Magnetic Properties of Nanocrystalline Ball-Milled LiSm Ferrite.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3618, doi. 10.1007/s11664-014-3251-x
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Nanostructured ZnO Films for Room Temperature Ammonia Sensing.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3211, doi. 10.1007/s11664-014-3253-8
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Influence of the Viscoelastic Properties of the Polyimide Dielectric Coating on the Wafer Warpage.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3255, doi. 10.1007/s11664-014-3255-6
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Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3217, doi. 10.1007/s11664-014-3256-5
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Low Temperature Consolidation of Micro/Nanosilver Die-Attach Preforms.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3379, doi. 10.1007/s11664-014-3257-4
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BiSiO Doping Concentration Effects on the Electrical Properties of SrBiTaO Films.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3625, doi. 10.1007/s11664-014-3258-3
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Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3145, doi. 10.1007/s11664-014-3259-2
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A Simple and Facile Iodination Method for Improving Sinterability and Electrical Conductivity of Silver Thick Films.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3389, doi. 10.1007/s11664-014-3260-9
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