Works matching IS 03615235 AND DT 2013 AND VI 42 AND IP 1

Results: 26

Preparation, Characterization, and Microwave Dielectric Properties of SrLaNbTaTiO (0 ≤ x ≤ 1) Ceramics.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 138, doi. 10.1007/s11664-012-2272-6

By:

Manan, Abdul;
Qazi, Ibrahim;
Ullah, Atta

Publication type:

Article

Dielectric Properties of Au/PVA (Cobalt-Doped)/ n-Si Photoconductive Diodes.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 103, doi. 10.1007/s11664-012-2332-y

By:

Gökçen, M.

Publication type:

Article

Evolution of the Structural and Electrical Properties of GeTe Under Different Annealing Conditions.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 78, doi. 10.1007/s11664-012-2262-8

By:

Kim, Ki-Hong;
Kyoung, Yong-Koo;
Lee, Jun-Ho;
Ham, Yong-Nam;
Choi, Sang-Jun

Publication type:

Article

Implantation Studies on Silicon-Doped GaN.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 21, doi. 10.1007/s11664-012-2278-0

By:

Simon, Ronnie;
Vianden, Reiner;
Köhler, Klaus

Publication type:

Article

High-Temperature Thermoelectric Properties of Compounds in the System ZnInO.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 114, doi. 10.1007/s11664-012-2300-6

By:

Amani, Matin;
Tougas, Ian;
Gregory, Otto;
Fralick, Gustave

Publication type:

Article

Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 58, doi. 10.1007/s11664-012-2309-x

By:

Chegel, Raad;
Behzad, Somayeh

Publication type:

Article

Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 47, doi. 10.1007/s11664-012-2315-z

By:

Miralaie, M.;
Leilaeioun, M.;
Abbasian, K.

Publication type:

Article

Transformation-Induced Plasticity in Sn-In Solder Joints.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 168, doi. 10.1007/s11664-012-2335-8

By:

Lee, K.-O.;
Morris, J.W.;
Hua, Fay

Publication type:

Article

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 10, doi. 10.1007/s11664-012-2109-3

By:

Kim, Hyeongnam;
Nath, Digbijoy;
Rajan, Siddharth;
Lu, Wu

Publication type:

Article

Thermal Parameters, Microstructure, and Mechanical Properties of Directionally Solidified Sn-0.7 wt.%Cu Solder Alloys Containing 0 ppm to 1000 ppm Ni.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 179, doi. 10.1007/s11664-012-2263-7

By:

Silva, Bismarck;
Cheung, Noé;
Garcia, Amauri;
Spinelli, José

Publication type:

Article

Electromagnetic Properties of NiZnCoO.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 151, doi. 10.1007/s11664-012-2271-7

By:

Said, M.

Publication type:

Article

Properties of the Mo Back Contact for the Formation of a Thin-Film Photovoltaic Absorber.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 71, doi. 10.1007/s11664-012-2311-3

By:

Wang, S.S.;
Hsu, C.Y.;
Shiou, F.J.;
Huang, P.C.;
Wen, D.C.

Publication type:

Article

Microstructure of GaNBi.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 26, doi. 10.1007/s11664-012-2323-z

By:

Liliental-Weber, Z.;
Dos Reis, R.;
Levander, A.X.;
Yu, K.M.;
Walukiewicz, W.;
Novikov, S.V.;
Foxon, C.T.

Publication type:

Article

Fast Preparation and Low-Temperature Thermoelectric Properties of CoSb.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 109, doi. 10.1007/s11664-012-2259-3

By:

Su, Taichao;
He, Chunyuan;
Li, Hongtao;
Guo, Xin;
Li, Shangsheng;
Ma, Hongan;
Jia, Xiaopeng

Publication type:

Article

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 143, doi. 10.1007/s11664-012-2270-8

By:

Aspera, Susan;
Kasai, Hideaki;
Kishi, Hirofumi;
Awaya, Nobuyoshi;
Ohnishi, Shigeo;
Tamai, Yukio

Publication type:

Article

Quantum Transport Properties of Graphene Nanoribbons with Defects and Dephasing Scattering Processes.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 1, doi. 10.1007/s11664-012-2243-y

By:

Sun, Guo-Ya;
Zhu, Yue-jin

Publication type:

Article

New Optically Controlled Frequency-Agile Microstrip Antenna.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 162, doi. 10.1007/s11664-012-2273-5

By:

Ehteshami, Nasrin;
Sathi, Vahid

Publication type:

Article

Effects of HO Pretreatment on the Capacitance-Voltage Characteristics of Atomic-Layer-Deposited AlO on Ga-Face GaN Metal-Oxide-Semiconductor Capacitors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 33, doi. 10.1007/s11664-012-2246-8

By:

Liu, Xiang;
Yeluri, Ramya;
Lu, Jing;
Mishra, Umesh

Publication type:

Article

Structure and Photoluminescent Properties of B-Doped (YDy)InGeO Phosphor.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 156, doi. 10.1007/s11664-012-2264-6

By:

Teoh, Lay-Gaik;
Tsai, Yeou-Yih;
Tsai, Mu-Tsun;
Chai, Yin-Lai;
Chang, Yee-Shin

Publication type:

Article

Electronic Materials Based on CoZnFeO/Pb(ZrTi)O Nanocomposites.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 121, doi. 10.1007/s11664-012-2319-8

By:

Mandal, Avinandan;
Das, Chapal

Publication type:

Article

The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 15, doi. 10.1007/s11664-012-2268-2

By:

Esposto, Michele;
Lecce, Valerio;
Bonaiuti, Matteo;
Chini, Alessandro

Publication type:

Article

Poisson Ratio of Epitaxial Germanium Films Grown on Silicon.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 40, doi. 10.1007/s11664-012-2337-6

By:

Bharathan, Jayesh;
Narayan, Jagdish;
Rozgonyi, George;
Bulman, Gary

Publication type:

Article

Low-Cycle Fatigue Behavior of 95.8Sn-3.5Ag-0.7Cu Solder Joints.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 192, doi. 10.1007/s11664-012-2258-4

By:

Tang, Y.;
Li, G.Y.;
Shi, X.Q.

Publication type:

Article

Impact of Pad Conditioning on Thickness Profile Control in Chemical Mechanical Planarization.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 83, doi. 10.1007/s11664-012-2250-z

By:

Kincal, S.;
Basim, G.B.

Publication type:

Article

Synthesis of Nanocrystalline CaWO as Low-Temperature Co-fired Ceramic Material: Processing, Structural and Physical Properties.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 129, doi. 10.1007/s11664-012-2303-3

By:

Vidya, S.;
Solomon, Sam;
Thomas, J.K.

Publication type:

Article

Experimental Evaluation of the Effect of Pad Debris Size on Microscratches during CMP Process.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 97, doi. 10.1007/s11664-012-2334-9

By:

Yang, Ji;
Kim, Hojoong;
Oh, Dong;
Won, Jai-Hyung;
Lee, Chil-Gee;
Kim, Taesung

Publication type:

Article