Works matching IS 03615235 AND DT 2012 AND VI 41 AND IP 10

Results: 50

Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2785, doi. 10.1007/s11664-012-2062-1

By:

Maloney, P.G.;
DeWames, R.;
Pellegrino, J.G.;
Billman, C.;
Arias, J.M.;
Edwall, D.D.;
Lee, D.;
Khurgin, J.

Publication type:

Article

Recent Results on Growth of (211)B CdTe on (211)Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2824, doi. 10.1007/s11664-012-1947-3

By:

Shintri, Shashidhar;
Rao, Sunil;
Wijewarnasuriya, Priyalal;
Trivedi, Sudhir;
Bhat, Ishwara

Publication type:

Article

A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2795, doi. 10.1007/s11664-012-1991-z

By:

Kim, Kwang-Chon;
Baek, Seung;
Kim, Hyun;
Song, Jin;
Kim, Jin-Sang

Publication type:

Article

Ab Initio Studies of the Unreconstructed Polar CdTe (111) Surface.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2745, doi. 10.1007/s11664-012-1924-x

By:

Li, Jin;
Gayles, Jacob;
Kioussis, Nicholas;
Zhang, Z.;
Grein, C.;
Aqariden, F.

Publication type:

Article

High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2816, doi. 10.1007/s11664-012-1978-9

By:

Antoszewski, J.;
Umana-Membreno, G.A.;
Faraone, L.

Publication type:

Article

Modulation Transfer Function Measurement of Infrared Focal-Plane Arrays with Small Fill Factors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2730, doi. 10.1007/s11664-012-1990-0

By:

Barrière, Florence;
Druart, Guillaume;
Guérineau, Nicolas;
Rommeluère, Sylvain;
Mugnier, Laurent;
Gravrand, Olivier;
Baier, Nicolas;
Lhermet, Nicolas;
Destefanis, Gérard;
Derelle, Sophie

Publication type:

Article

Modeling and Design of a Thin-Film CdTe/Ge Tandem Solar Cell.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2759, doi. 10.1007/s11664-012-1984-y

By:

Sharp, James;
Pulfrey, David;
Umana-Membreno, Gilberto;
Faraone, Lorenzo;
Dell, John

Publication type:

Article

Response of the Internal Electric Field in CdZnTe to Illumination at Multiple Optical Powers.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2874, doi. 10.1007/s11664-012-1922-z

By:

Washington, Aaron;
Teague, Lucile;
Duff, Martine;
Burger, Arnold;
Groza, Michael;
Buliga, Vladimir

Publication type:

Article

Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2838, doi. 10.1007/s11664-012-2001-1

By:

Moravec, P.;
Tomashik, Z.;
Ivanits'ka, V.;
Tomashik, V.;
Franc, J.;
Mašek, K.;
Höschl, P.

Publication type:

Article

Investigation of Structural Defects in CdZnTe Detector-Grade Crystals.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2908, doi. 10.1007/s11664-012-2007-8

By:

Hossain, A.;
Bolotnikov, A.E.;
Camarda, G.S.;
Gul, R.;
Kim, K.H.;
Kisslinger, K.;
Yang, G.;
Zhang, L.H.;
James, R.B.

Publication type:

Article

Dynamical X-ray Diffraction from ZnSSe/GaAs (001) Multilayers and Superlattices with Dislocations.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2846, doi. 10.1007/s11664-012-2012-y

By:

Rago, P.B.;
Suarez, E.N.;
Jain, F.C.;
Ayers, J.E.

Publication type:

Article

Short-Wave Infrared HgCdTe Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2928, doi. 10.1007/s11664-012-1970-4

By:

Rothman, Johan;
Mollard, Laurent;
Bosson, Sylvie;
Vojetta, Gautier;
Foubert, Kevin;
Gatti, Sylvain;
Bonnouvrier, Gwladys;
Salveti, Frederic;
Kerlain, Alexandre;
Pacaud, Olivier

Publication type:

Article

Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2886, doi. 10.1007/s11664-012-1992-y

By:

Itsuno, Anne;
Phillips, Jamie;
Velicu, Silviu

Publication type:

Article

MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2917, doi. 10.1007/s11664-012-2032-7

By:

Chen, Yuanping;
Simingalam, Sina;
Brill, Gregory;
Wijewarnasuriya, Priyalal;
Dhar, Nibir;
Kim, Jae;
Smith, David

Publication type:

Article

Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2912, doi. 10.1007/s11664-012-2013-x

By:

Yang, G.;
Bolotnikov, A.E.;
Fochuk, P.M.;
Cui, Y.;
Camarda, G.;
Hossain, A.;
Kim, K.;
Horace, J.;
McCall, B.;
Gul, R.;
Kopach, O.V.;
Egarievwe, S.U.;
James, R.B.

Publication type:

Article

Colloidal HgTe Material for Low-Cost Detection into the MWIR.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2725, doi. 10.1007/s11664-012-2006-9

By:

Lhuillier, Emmanuel;
Keuleyan, Sean;
Liu, Heng;
Guyot-Sionnest, Philippe

Publication type:

Article

HgCdTe Molecular Beam Epitaxy Growth Temperature Calibration Using Spectroscopic Ellipsometry.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2937, doi. 10.1007/s11664-012-2053-2

By:

Vilela, M.F.;
Pribil, G.K.;
Olsson, K.R.;
Lofgreen, D.D.

Publication type:

Article

Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2738, doi. 10.1007/s11664-012-2054-1

By:

Chai, J.;
Lee, K.-K.;
Doyle, K.;
Dinan, J.H.;
Myers, T.H.

Publication type:

Article

Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2714, doi. 10.1007/s11664-012-2035-4

By:

Cervera, C.;
Ribet-Mohamed, I.;
Taalat, R.;
Perez, J.P.;
Christol, P.;
Rodriguez, J.B.

Publication type:

Article

Determination of the Temperature Dependence of the Band Gap Energy of Semiconductors from Transmission Spectra.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2857, doi. 10.1007/s11664-012-2055-0

By:

Wei, Jean;
Murray, Joel;
Barnes, Jacob;
Gonzalez, Leonel;
Guha, Shekhar

Publication type:

Article

Crosstalk Modeling of Small-Pitch Two-Color HgCdTe Photodetectors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2925, doi. 10.1007/s11664-012-2057-y

By:

Wehner, J.G.A.;
Smith, E.P.G.;
Radford, W.;
Mears, C.L.

Publication type:

Article

FeZnO-Based Resistive Switching Devices.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2880, doi. 10.1007/s11664-012-2045-2

By:

Zhang, Yang;
Duan, Ziqing;
Li, Rui;
Ku, Chieh-Jen;
Reyes, Pavel;
Ashrafi, Almamun;
Lu, Yicheng

Publication type:

Article

Microstructural Characterization of HgCdSe Grown by Molecular Beam Epitaxy on ZnTe/Si(112) and GaSb(112) Substrates.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2852, doi. 10.1007/s11664-012-2069-7

By:

Zhao, W.;
Brill, G.;
Chen, Y.;
Smith, David

Publication type:

Article

X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II-VI Material Growth.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2799, doi. 10.1007/s11664-012-2085-7

By:

Lee, Kyoung-Keun;
Doyle, Kevin;
Chai, Jessica;
Dinan, John;
Myers, Thomas

Publication type:

Article

Growth and Analysis of HgCdTe on Alternate Substrates.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2971, doi. 10.1007/s11664-012-2089-3

By:

Benson, J.D.;
Bubulac, L.O.;
Smith, P.J.;
Jacobs, R.N.;
Markunas, J.K.;
Jaime-Vasquez, M.;
Almeida, L.A.;
Stoltz, A.;
Arias, J.M.;
Brill, G.;
Chen, Y.;
Wijewarnasuriya, P.S.;
Farrell, S.;
Lee, U.

Publication type:

Article

Numerical Estimations of Carrier Generation-Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2766, doi. 10.1007/s11664-012-2093-7

By:

Jóźwikowski, K.;
Kopytko, M.;
Rogalski, A.

Publication type:

Article

Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(211) Through a Nanopatterned Silicon Nitride Mask.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2899, doi. 10.1007/s11664-012-2056-z

By:

Fahey, S.;
Bommena, R.;
Kodama, R.;
Sporken, R.;
Sivananthan, S.

Publication type:

Article

Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic Ellipsometry.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2965, doi. 10.1007/s11664-012-2088-4

By:

Lennon, C.M.;
Almeida, L.A.;
Jacobs, R.N.;
Markunas, J.K.;
Smith, P.J.;
Arias, J.;
Brown, A.E.;
Pellegrino, J.

Publication type:

Article

Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2943, doi. 10.1007/s11664-012-2087-5

By:

Kerlain, A.;
Bonnouvrier, G.;
Rubaldo, L.;
Decaens, G.;
Reibel, Y.;
Abraham, P.;
Rothman, J.;
Mollard, L.;
De Borniol, E.

Publication type:

Article

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2833, doi. 10.1007/s11664-012-2100-z

By:

Colegrove, E.;
Banai, R.;
Blissett, C.;
Buurma, C.;
Ellsworth, J.;
Morley, M.;
Barnes, S.;
Gilmore, C.;
Bergeson, J.;
Dhere, R.;
Scott, M.;
Gessert, T.;
Sivananthan, Siva

Publication type:

Article

MBE Growth of MCT on GaAs Substrates at AIM.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2828, doi. 10.1007/s11664-012-2113-7

By:

Wenisch, J.;
Eich, D.;
Lutz, H.;
Schallenberg, T.;
Wollrab, R.;
Ziegler, J.

Publication type:

Article

Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2867, doi. 10.1007/s11664-012-2104-8

By:

Gemain, F.;
Robin, I.C.;
Brochen, S.;
De Vita, M.;
Gravrand, O.;
Lusson, A.

Publication type:

Article

Influence of Surface Polishing on the Structural and Electronic Properties of CdZnTe Surfaces.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2893, doi. 10.1007/s11664-012-2126-2

By:

Aqariden, F.;
Tari, S.;
Nissanka, K.;
Li, Jin;
Kioussis, N.;
Pimpinella, R.;
Dobrowolska, M.

Publication type:

Article

Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2754, doi. 10.1007/s11664-012-2121-7

By:

Yasuda, K.;
Niraula, M.;
Fujimura, N.;
Tachi, T.;
Inuzuka, H.;
Namba, S.;
Muramatsu, S.;
Kondo, T.;
Agata, Y.

Publication type:

Article

Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2719, doi. 10.1007/s11664-012-2129-z

By:

Carmody, M.;
Yulius, A.;
Edwall, D.;
Lee, D.;
Piquette, E.;
Jacobs, R.;
Benson, D.;
Stoltz, A.;
Markunas, J.;
Almeida, A.;
Arias, J.

Publication type:

Article

Study of Macrodefects in MBE-Grown HgCdTe Epitaxial Layers Using Focused Ion Beam Milling.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2957, doi. 10.1007/s11664-012-2122-6

By:

Reddy, M.;
Wilde, J.;
Peterson, J.;
Lofgreen, D.D.;
Johnson, S.M.

Publication type:

Article

Laser-Assisted Chemical Polishing of Silicon (112) Wafers.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2790, doi. 10.1007/s11664-012-2130-6

By:

Dandekar, Niru;
Chivas, Robert;
Silverman, Scott;
Kou, Xiaolu;
Goorsky, Mark

Publication type:

Article

Reduction of Dislocation Density by Producing Novel Structures.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2949, doi. 10.1007/s11664-012-2106-6

By:

Stoltz, A.;
Benson, J.;
Jacobs, R.;
Smith, P.;
Almeida, L.;
Carmody, M.;
Farrell, S.;
Wijewarnasuriya, P.;
Brill, G.;
Chen, Y.

Publication type:

Article

Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II-VI Barrier Layers.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2775, doi. 10.1007/s11664-012-2161-z

By:

Jain, F.;
Karmakar, S.;
Chan, P.-Y.;
Suarez, E.;
Gogna, M.;
Chandy, J.;
Heller, E.

Publication type:

Article

Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic Annealing.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2975, doi. 10.1007/s11664-012-2169-4

By:

Jaime-Vasquez, M.;
Jacobs, R.N.;
Nozaki, C.;
Benson, J.D.;
Almeida, L.A.;
Arias, J.;
Pellegrino, J.

Publication type:

Article

Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II-VI Tunnel Insulators Showing Three-State Behavior.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2810, doi. 10.1007/s11664-012-2176-5

By:

Chan, P.-Y.;
Suarez, E.;
Gogna, M.;
Miller, B.I.;
Heller, E.K.;
Ayers, J.E.;
Jain, F.C.

Publication type:

Article

Numerical Simulation of InAs nBn Back-Illuminated Detectors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2981, doi. 10.1007/s11664-012-2168-5

By:

Schuster, Jonathan;
Keasler, Craig;
Reine, Marion;
Bellotti, Enrico

Publication type:

Article

Electrooptical Characterization of MWIR InAsSb Detectors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2671, doi. 10.1007/s11664-012-2182-7

By:

D'Souza, A.I.;
Robinson, E.;
Ionescu, A.C.;
Okerlund, D.;
Lyon, T.J.;
Sharifi, H.;
Roebuck, M.;
Yap, D.;
Rajavel, R.D.;
Dhar, N.;
Wijewarnasuriya, P.S.;
Grein, C.

Publication type:

Article

Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2686, doi. 10.1007/s11664-012-2181-8

By:

Gravrand, O.;
Mollard, L.;
Boulade, O.;
Moreau, V.;
Sanson, E.;
Destefanis, G.

Publication type:

Article

MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2700, doi. 10.1007/s11664-012-2189-0

By:

Aqariden, F.;
Elsworth, J.;
Zhao, J.;
Grein, C.H.;
Sivananthan, S.

Publication type:

Article

I- V and Differential Conduction Characteristics of an AlGaAs/GaAs Lateral Quantum Dot Infrared Photodetector.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2679, doi. 10.1007/s11664-012-2187-2

By:

Guidry, D.H.;
Morath, C.P.;
Cowan, V.M.;
Cardimona, D.A.

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2661, doi. 10.1007/s11664-012-2236-x

By:

Sivananthan, S.;
Dhar, N.;
Anter, Y.

Publication type:

Article

Development of MBE II-VI Epilayers on GaAs(211)B.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2707, doi. 10.1007/s11664-012-2218-z

By:

Jacobs, R.N.;
Nozaki, C.;
Almeida, L.A.;
Jaime-Vasquez, M.;
Lennon, C.;
Markunas, J.K.;
Benson, D.;
Smith, P.;
Zhao, W.F.;
Smith, D.J.;
Billman, C.;
Arias, J.;
Pellegrino, J.

Publication type:

Article

X-ray Diffraction Investigation of Thermoelastic Properties of HgCdTe/CdZnTe Structures.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2694, doi. 10.1007/s11664-012-2240-1

By:

Gergaud, P.;
Jonchère, A.;
Amstatt, B.;
Baudry, X.;
Brellier, D.;
Ballet, P.

Publication type:

Article

ZnS-ZnMgS-ZnS Lattice-Matched Gate Insulator as an Alternative for Silicon Dioxide on Silicon in Quantum Dot Gate FETs (QDGFETs).

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2663, doi. 10.1007/s11664-012-2220-5

By:

Karmakar, Supriya;
Suarez, Ernesto;
Gogna, Mukesh;
Jain, Faquir

Publication type:

Article