Works matching IS 03615235 AND DT 2012 AND VI 41 AND IP 8
Results: 39
Enhancing Piezoelectric Performance of CaBiNbO Ceramics Through Microstructure Control.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2238, doi. 10.1007/s11664-012-2051-4
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- Article
High-Temperature Oxidation Behavior of Filled Skutterudites YbCoSb.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2225, doi. 10.1007/s11664-012-2038-1
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- Article
A Comparative Study of Co-electrodeposited CuZnSnS Absorber Material on Fluorinated Tin Oxide and Molybdenum Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2210, doi. 10.1007/s11664-012-2042-5
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- Article
Solder Characteristics of a Rapidly Solidified Sn-9Zn-0.1Cr Alloy and Mechanical Properties of Cu/Solder/Cu Joints.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2100, doi. 10.1007/s11664-012-2043-4
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- Article
Liquid-Phase Separation in the Interdendritic Region After Growth of Primary β-Sn in Undercooled Sn-2.8Ag-0.3Cu Melt.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2035, doi. 10.1007/s11664-012-2075-9
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- Article
Embedded Capacitors in Printed Wiring Board: A Technological Review.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2286, doi. 10.1007/s11664-012-2044-3
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- Article
Reactive Wetting Processes and Triple-Line Configuration of Sn-3.5Ag on Cu Substrates at Elevated Temperatures.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2051, doi. 10.1007/s11664-012-2064-z
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- Article
Modeling Fracture of Sn-Rich (Pb-Free) Solder Joints Under Mechanical Shock Conditions.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2089, doi. 10.1007/s11664-012-2079-5
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- Article
Vapor-Assisted Surface Activation Method for Homo- and Heterogeneous Bonding of Cu, SiO, and Polyimide at 150°C and Atmospheric Pressure.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2274, doi. 10.1007/s11664-012-2091-9
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- Article
Effects of Frequency on AC Conductivity and Magnetoresistance in Doped LaCaMnO Manganites.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2243, doi. 10.1007/s11664-012-2092-8
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- Article
Internal Microstructure Investigation of Tin Whisker Growth Using FIB Technology.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2029, doi. 10.1007/s11664-012-2065-y
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- Article
Nanoindentation Creep Behavior of Nanocomposite Sn-Ag-Cu Solders.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2057, doi. 10.1007/s11664-012-2086-6
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- Article
Dielectric and Thermal Properties of Polyimide-Poly(ethylene oxide) Nanofoamed Films.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2281, doi. 10.1007/s11664-012-2037-2
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- Article
Physical and Electrical Properties of DyO and DyTiO Metal Oxide-High- κ Oxide-Silicon-Type Nonvolatile Memory Devices.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2197, doi. 10.1007/s11664-012-2115-5
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- Article
Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2169, doi. 10.1007/s11664-012-2103-9
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- Article
Impurity Band Effects in Thermoelectric Materials.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2126, doi. 10.1007/s11664-012-2108-4
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- Article
Electronic Properties as a Function of Ag/Sb Ratio in AgPbSbTe Compounds.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2065, doi. 10.1007/s11664-012-2111-9
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- Article
Reliability of Au-Ge and Au-Si Eutectic Solder Alloys for High-Temperature Electronics.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2107, doi. 10.1007/s11664-012-2114-6
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- Article
Fabrication and Circuit Modeling of NMOS Inverter Based on Quantum Dot Gate Field-Effect Transistors.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2184, doi. 10.1007/s11664-012-2116-4
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- Article
Optical and Electrical Properties of CuZnSnS Film Prepared by Sulfurization Method.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2204, doi. 10.1007/s11664-012-2112-8
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- Article
Development of Metallic Hermetic Sealing for MEMS Packaging for Harsh Environment Applications.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2256, doi. 10.1007/s11664-012-2107-5
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- Article
Effects of Ethylenediamine Tetraacetic Acid on the Texture and Magnetic Properties of Barium Ferrite Films.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2232, doi. 10.1007/s11664-012-2118-2
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- Article
Fabrication of Bistable Switching Memory Devices Utilizing Polymer-ZnO Nanocomposites.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2162, doi. 10.1007/s11664-012-2125-3
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- Article
Microstructure and Tensile Properties of Sn-1Ag-0.5Cu Solder Alloy Bearing Al for Electronics Applications.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2073, doi. 10.1007/s11664-012-2135-1
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- Article
Erratum to: Effects of Pulsed Laser Deposition Conditions on the Microstructure of CaCoO Thin Films.
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- 2012
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- Correction Notice
Effect of Cu Substitution on the Magnetic Properties of SmCo Film with Perpendicular Magnetic Anisotropy.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2178, doi. 10.1007/s11664-012-2119-1
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- Article
CuZn Growth Reversion in Cu/Sn-8Zn-3Bi/Cu During Discontinuous Electromigration.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2045, doi. 10.1007/s11664-012-2131-5
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- Article
Effect of Mn and Nb Doped BaTiO in the Dielectric Properties in the Ba(MnNb)TiO.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2250, doi. 10.1007/s11664-012-2027-4
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- Article
Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2145, doi. 10.1007/s11664-012-2136-0
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- Article
Low-Temperature Synthesis of Fe-Doped ZnO Nanotubes.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2155, doi. 10.1007/s11664-012-2127-1
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- Article
ZnO Grown on (111) ZnS Substrates by Plasma-Assisted Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2151, doi. 10.1007/s11664-012-2137-z
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- Article
The Effect of Heat Treatment on Structural and Multiferroic Properties of Phase-Pure BiFeO.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2216, doi. 10.1007/s11664-012-2138-y
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- Publication type:
- Article
Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2130, doi. 10.1007/s11664-012-2144-0
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- Article
Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2193, doi. 10.1007/s11664-012-2133-3
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- Article
The Effect of Crystallographic Orientation on the Mechanical Behavior of CuSn by Micropillar Compression Testing.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2083, doi. 10.1007/s11664-012-2124-4
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- Article
Effect of Addition of Ag, In or Pb on the Structure and Thermoelectric Performance of β-ZnSb.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2118, doi. 10.1007/s11664-012-2139-x
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- Article
Metal/PET Composite Knitted Fabrics and Composites: Structural Design and Electromagnetic Shielding Effectiveness.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2267, doi. 10.1007/s11664-012-2128-0
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- Publication type:
- Article
Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates.
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- Journal of Electronic Materials, 2012, v. 41, n. 8, p. 2139, doi. 10.1007/s11664-012-2150-2
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- Publication type:
- Article
Erratum to: Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes.
- Published in:
- 2012
- By:
- Publication type:
- Correction Notice