Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 8

Results: 34

Improved Thermoelectric Performance and Mechanical Properties of Nanostructured Melt-Spun β-Zn4Sb3.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1159, doi. 10.1007/s11664-010-1288-z

By:

Dekui Qi;
Xinfeng Tang;
Han Li;
Yonggao Yan;
Qingjie Zhang

Publication type:

Article

Electron–Electron Interactions in Sb-Doped SnO2 Thin Films.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1152, doi. 10.1007/s11664-010-1252-y

By:

Serin, Tülay;
Yildiz, Abdullah;
Serin, Necmi;
Yildirim, Nurcan;
Özyurt, Figen;
Kasap, Mehmet

Publication type:

Article

Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al2O3.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1209, doi. 10.1007/s11664-010-1251-z

By:

Hullavarad, S.;
Hullavarad, N.;
Vispute, R.;
Venkatesan, T.;
Kilpatrick, S. J.;
Ervin, M. H.;
Nichols, B.;
Wickenden, A. E.

Publication type:

Article

Thermodynamic Description of the Te-Tl Binary System Using the Associate Solution Model.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1319, doi. 10.1007/s11664-010-1248-7

By:

Gierlotka, Wojciech

Publication type:

Article

Electrical Conductivity of Graphene Composites with In and In-Ga Alloy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1268, doi. 10.1007/s11664-010-1208-2

By:

Sruti, A.;
Jagannadham, K.

Publication type:

Article

Comparative Study on the Properties of Galvanically Deposited Nano- and Microcrystalline Thin Films of PbSe.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1177, doi. 10.1007/s11664-010-1194-4

By:

Mukherjee, Nillohit;
Mondal, Anup

Publication type:

Article

Influence of Cadmium Composition on CH4–H2-Based Inductively Coupled Plasma Etching of Hg1− xCd xTe.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1256, doi. 10.1007/s11664-010-1221-5

By:

Boulard, F.;
Baylet, J.;
Cardinaud, C.

Publication type:

Article

Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1262, doi. 10.1007/s11664-010-1224-2

By:

Carder, D.A.;
Markwitz, A.;
Kennedy, J.

Publication type:

Article

Effective Permittivity Calculation of Composites with Interpenetrating Phases.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1351, doi. 10.1007/s11664-010-1229-x

By:

Yu Zeng;
Hongtao Zhang;
Hongyan Zhang;
Zhipeng Hu

Publication type:

Article

Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1248, doi. 10.1007/s11664-010-1228-y

By:

Kanbe, Hiroshi;
Hirose, Mami;
Ito, Tatsuya;
Taniwaki, Masafumi

Publication type:

Article

Improvement of High-Temperature Performance of Zn-Sn Solder Joint.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1241, doi. 10.1007/s11664-010-1233-1

By:

Takahashi, Toshihide;
Komatsu, Shuichi;
Nishikawa, Hiroshi;
Takemoto, Tadashi

Publication type:

Article

Carboxylate-Passivated Silver Nanoparticles and Their Application to Sintered Interconnection: A Replacement for High Temperature Lead-Rich Solders.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1233, doi. 10.1007/s11664-010-1236-y

By:

Ogura, Hiroshi;
Maruyama, Minoru;
Matsubayashi, Ryo;
Ogawa, Tetsuya;
Nakamura, Shigeyoshi;
Komatsu, Teruo;
Nagasawa, Hiroshi;
Ichimura, Akio;
Isoda, Seiji

Publication type:

Article

Nonvolatile Metal–Oxide–Semiconductor Capacitors with Ru-RuO x Composite Nanodots Embedded in Atomic-Layer-Deposited Al2O3 Films.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1343, doi. 10.1007/s11664-010-1245-x

By:

Hong-Yan Gou;
Shi-Jin Ding;
Yue Huang;
Qing-Qing Sun;
Wei Zhang;
Peng-Fei Wang;
Zhenyi Chen

Publication type:

Article

Effect of Ag Content on Solidification Cracking Susceptibility of Sn-Ag-Cu Solder Joints.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1298, doi. 10.1007/s11664-010-1175-7

By:

Wei Lu;
Yaowu Shi;
Yongping Lei

Publication type:

Article

Crystallographically Faceted Void Formation in the Matrix of Lead-Free Solder Joints.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1295, doi. 10.1007/s11664-010-1184-6

By:

Belyakov, S.;
Atkinson, H. V.;
Gill, S. P. A.

Publication type:

Article

Thermoelectric Properties of Layer-Antiferromagnet CuCrS2.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1133, doi. 10.1007/s11664-010-1185-5

By:

Tewari, Girish C.;
Tripathi, T. S.;
Rastogi, A. K.

Publication type:

Article

Interfacial Reaction Between 95Pb-5Sn Solder Bump and 37Pb-63Sn Presolder in Flip-Chip Solder Joints.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1289, doi. 10.1007/s11664-010-1186-4

By:

Chang, C. C.;
Wang, Y. W.;
Lai, Y. S.;
Kao, C. R.

Publication type:

Article

Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1303, doi. 10.1007/s11664-010-1180-x

By:

Chao-hong Wang;
Chun-yi Kuo

Publication type:

Article

A Low-Temperature Bonding Process Using Mixed Cu–Ag Nanoparticles.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1283, doi. 10.1007/s11664-010-1195-3

By:

Morisada, Y.;
Nagaoka, T.;
Fukusumi, M.;
Kashiwagi, Y.;
Yamamoto, M.;
Nakamoto, M.

Publication type:

Article

Weakening of the Cu/Cu3Sn(100) Interface by Bi Impurities.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1277, doi. 10.1007/s11664-010-1196-2

By:

Pang, X.;
Shang, P. J.;
Wang, S. Q.;
Liu, Z. Q.;
Shang, J. K.

Publication type:

Article

Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1166, doi. 10.1007/s11664-010-1192-6

By:

Feng, Gan;
Suda, Jun;
Kimoto, Tsunenobu

Publication type:

Article

Reduced Temperature Coefficient of Capacitance (TCC) of Embedded Capacitor Films (ECFs) for Organic Substrates using SrTiO3 and Multifunctional Epoxy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1358, doi. 10.1007/s11664-010-1216-2

By:

Sangyong Lee;
Kyung-Wook Paik

Publication type:

Article

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol–Gel Dip-Coating and Resistive Evaporation.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1170, doi. 10.1007/s11664-010-1161-0

By:

Pineiz, Tatiane;
Scalvi, Luis;
Saeki, Margarida J.;
De Morais, Evandro A.

Publication type:

Article

Dielectric and Electrical Conductivity Relaxation in 0.5Li2O-0.5Na2O-2B2O3 Glasses.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1334, doi. 10.1007/s11664-010-1169-5

By:

Vaish, Rahul;
Varma, K.B.R.

Publication type:

Article

Effects of Current Stressing on Formation and Evolution of Kirkendall Voids at Sn–3.5Ag/Cu Interface.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1309, doi. 10.1007/s11664-010-1201-9

By:

Yu, C.;
Yang, Y.;
Lu, H.;
Chen, J.

Publication type:

Article

Ti-Rich Barrier Layers Self-Formed on Porous Low- k Layers Using Cu(1 at.% Ti) Alloy Films.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1326, doi. 10.1007/s11664-010-1182-8

By:

Ito, Kazuhiro;
Kohama, Kazuyuki;
Tanaka, Tomohisa;
Mori, Kenichi;
Maekawa, Kazuyoshi;
Shirai, Yasuharu;
Murakami, Masanori

Publication type:

Article

Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1364, doi. 10.1007/s11664-010-1166-8

By:

Tomozawa, Masanari;
Ozaki, Kimihiro;
Mikami, Masashi;
Kobayashi, Keizo

Publication type:

Article

Critical Layer Thickness in Exponentially Graded Heteroepitaxial Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1140, doi. 10.1007/s11664-010-1165-9

By:

Sidoti, D.;
Xhurxhi, S.;
Kujofsa, T.;
Cheruku, S.;
Reed, J.;
Bertoli, B.;
Rago, P. B.;
Suarez, E. N.;
Jain, F. C.;
Ayers, J. E.

Publication type:

Article

Microstructural Analysis of Reballed Tin-Lead, Lead-Free, and Mixed Ball Grid Array Assemblies Under Temperature Cycling Test.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1218, doi. 10.1007/s11664-010-1209-1

By:

Nie, Lei;
Mueller, Maik;
Osterman, Michael;
Pecht, Michael

Publication type:

Article

Characterization by Internal Photoemission Spectroscopy of Single-Crystal CVD Diamond Schottky Barrier Diodes.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1203, doi. 10.1007/s11664-010-1255-8

By:

Majdi, Saman;
Gabrysch, Markus;
Balmer, Richard;
Twitchen, Daniel;
Isberg, Jan

Publication type:

Article

Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1186, doi. 10.1007/s11664-010-1268-3

By:

Dadsetani, M.;
Namjoo, S.;
Nejati, H.

Publication type:

Article

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1194, doi. 10.1007/s11664-010-1254-9

By:

Rodríguez, A.;
Rodríguez, T.;
Prieto, Á. C.;
Jiménez, J.;
Kling, A.;
Ballesteros, C.;
Sangrador, J.

Publication type:

Article

High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1125, doi. 10.1007/s11664-010-1258-5

By:

Je-Hyeong Bahk;
Gehong Zeng;
Zide, Joshua M. O.;
Hong Lu;
Singh, Rajeev;
Di Liang;
Ramu, Ashok T.;
Burke, Peter;
Bian, Zhixi;
Gossard, Arthur C.;
Shakouri, Ali;
Bowers, John E.

Publication type:

Article

Structural Properties of AlN Grown on Sapphire at Plasma Self-Heating Conditions Using Reactive Magnetron Sputter Deposition.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1146, doi. 10.1007/s11664-010-1275-4

By:

Hui-Chan Seo;
Petrov, Ivan;
Kim, Kyekyoon

Publication type:

Article

Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 8

Improved Thermoelectric Performance and Mechanical Properties of Nanostructured Melt-Spun β-Zn<sub>4</sub>Sb<sub>3</sub>.

Electron–Electron Interactions in Sb-Doped SnO<sub>2</sub> Thin Films.

Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al<sub>2</sub>O<sub>3</sub>.

Thermodynamic Description of the Te-Tl Binary System Using the Associate Solution Model.

Electrical Conductivity of Graphene Composites with In and In-Ga Alloy.

Comparative Study on the Properties of Galvanically Deposited Nano- and Microcrystalline Thin Films of PbSe.

Influence of Cadmium Composition on CH<sub>4</sub>–H<sub>2</sub>-Based Inductively Coupled Plasma Etching of Hg<sub>1− x</sub>Cd<sub> x</sub>Te.

Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing.

Effective Permittivity Calculation of Composites with Interpenetrating Phases.

Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding.

Improvement of High-Temperature Performance of Zn-Sn Solder Joint.

Carboxylate-Passivated Silver Nanoparticles and Their Application to Sintered Interconnection: A Replacement for High Temperature Lead-Rich Solders.

Nonvolatile Metal–Oxide–Semiconductor Capacitors with Ru-RuO<sub> x</sub> Composite Nanodots Embedded in Atomic-Layer-Deposited Al<sub>2</sub>O<sub>3</sub> Films.

Effect of Ag Content on Solidification Cracking Susceptibility of Sn-Ag-Cu Solder Joints.

Crystallographically Faceted Void Formation in the Matrix of Lead-Free Solder Joints.

Thermoelectric Properties of Layer-Antiferromagnet CuCrS<sub>2</sub>.

Interfacial Reaction Between 95Pb-5Sn Solder Bump and 37Pb-63Sn Presolder in Flip-Chip Solder Joints.

Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples.

A Low-Temperature Bonding Process Using Mixed Cu–Ag Nanoparticles.

Weakening of the Cu/Cu<sub>3</sub>Sn(100) Interface by Bi Impurities.

Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC.

Reduced Temperature Coefficient of Capacitance (TCC) of Embedded Capacitor Films (ECFs) for Organic Substrates using SrTiO<sub>3</sub> and Multifunctional Epoxy.

Interface Formation and Electrical Transport in SnO<sub>2</sub>:Eu<sup>3+</sup>/GaAs Heterojunction Deposited by Sol–Gel Dip-Coating and Resistive Evaporation.

Dielectric and Electrical Conductivity Relaxation in 0.5Li<sub>2</sub>O-0.5Na<sub>2</sub>O-2B<sub>2</sub>O<sub>3</sub> Glasses.

Effects of Current Stressing on Formation and Evolution of Kirkendall Voids at Sn–3.5Ag/Cu Interface.

Ti-Rich Barrier Layers Self-Formed on Porous Low- k Layers Using Cu(1 at.% Ti) Alloy Films.

Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization.

Critical Layer Thickness in Exponentially Graded Heteroepitaxial Layers.

Microstructural Analysis of Reballed Tin-Lead, Lead-Free, and Mixed Ball Grid Array Assemblies Under Temperature Cycling Test.

Characterization by Internal Photoemission Spectroscopy of Single-Crystal CVD Diamond Schottky Barrier Diodes.

Optical Study of Filled Tetrahedral Compounds Li<sub>3</sub>AlN<sub>2</sub> and Li<sub>3</sub>GaN<sub>2</sub>.

Crystallization of Amorphous Si<sub>0.6</sub>Ge<sub>0.4</sub> Nanoparticles Embedded in SiO<sub>2</sub>: Crystallinity Versus Compositional Stability.

High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding.

Structural Properties of AlN Grown on Sapphire at Plasma Self-Heating Conditions Using Reactive Magnetron Sputter Deposition.