Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 7

Results: 44

Simulations of Dislocations in CdZnTe/SL/Si Substrates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1063, doi. 10.1007/s11664-009-1039-1

By:

Ciani, Anthony J.;
Chung, Peter W.

Publication type:

Article

MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1058, doi. 10.1007/s11664-009-1041-7

By:

Lyon, T. J.;
Rajavel, R. D.;
Nosho, B. Z.;
Terterian, S.;
Beliciu, M. L.;
Patterson, P. R.;
Chang, D. T.;
Boag-O'Brien, M. F.;
Holden, B. T.;
Jacobs, R. N.;
Benson, J. D.

Publication type:

Article

Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1053, doi. 10.1007/s11664-009-1050-6

By:

Yang, G.;
Bolotnikov, A. E.;
Li, L.;
Camarda, G. S.;
Cui, Y.;
Hossain, A.;
Kim, K.;
Carcelen, V.;
Gul, R.;
James, R. B.

Publication type:

Article

Shallow-Etch Mesa Isolation of Graded-Bandgap “W”-Structured Type II Superlattice Photodiodes.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1070, doi. 10.1007/s11664-009-1056-0

By:

Aifer, E. H.;
Warner, J. H.;
Canedy, C. L.;
Vurgaftman, I.;
Jackson, E. M.;
Tischler, J. G.;
Meyer, J. R.;
Powell, S. P.;
Olver, K.;
Tennant, W. E.

Publication type:

Article

“Rule 07” Revisited: Still a Good Heuristic Predictor of p/ n HgCdTe Photodiode Performance?

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1030, doi. 10.1007/s11664-010-1084-9

By:

Tennant, W. E.

Publication type:

Article

HgCdTe: Recent Trends in the Ultimate IR Semiconductor.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1043, doi. 10.1007/s11664-010-1087-6

By:

Kinch, Michael A.

Publication type:

Article

A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1019, doi. 10.1007/s11664-010-1083-x

By:

Zhang, J.;
Tsen, G. K. O.;
Antoszewski, J.;
Dell, J. M.;
Faraone, L.;
Hu, W. D.

Publication type:

Article

LWIR Strained-Layer Superlattice Materials and Devices at Teledyne Imaging Sensors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1001, doi. 10.1007/s11664-010-1091-x

By:

Hood, Andrew D.;
Evans, Allan J.;
Ikhlassi, Amal;
Lee, Donald L.;
Tennant, William E.

Publication type:

Article

Investigation of Multicarrier Transport in LPE-Grown Hg1− xCd xTe Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1023, doi. 10.1007/s11664-010-1086-7

By:

Umana-Membreno, G. A.;
Antoszewski, J.;
Faraone, L.;
Smith, E. P. G.;
Venzor, G. M.;
Johnson, S. M.;
Phillips, V.

Publication type:

Article

Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 996, doi. 10.1007/s11664-010-1095-6

By:

Rao, S. R.;
Shintri, S. S.;
Markunas, J. K.;
Jacobs, R. N.;
Bhat, I. B.

Publication type:

Article

Effective Surface Passivation of CdMnTe Materials.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1015, doi. 10.1007/s11664-010-1090-y

By:

Kim, K. H.;
Carcelén, V.;
Bolotnikov, A. E.;
Camarda, G. S.;
Gul, R.;
Hossain, A.;
Yang, G.;
Cui, Y.;
James, R. B.

Publication type:

Article

Achieving Manufacturing Readiness for 6-Inch HgCdTe on Silicon.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1007, doi. 10.1007/s11664-010-1089-4

By:

Paden, L. A.;
Bangs, J. W.;
Emerson, R. M.;
Olshove, R. M.;
Norton, E. M.;
Garnett, D. A.;
Smith, E.;
Garvine, K. A.;
Peterson, J. M.;
Reddy, M.

Publication type:

Article

Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 992, doi. 10.1007/s11664-010-1107-6

By:

Pimpinella, R. E.;
Liu, X.;
Furdyna, J. K.;
Dobrowolska, M.;
Mintairov, A. M.;
Merz, J. L.

Publication type:

Article

Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 981, doi. 10.1007/s11664-010-1121-8

By:

Weida Hu;
Xiaoshuang Chen;
Zhenhua Ye;
Jing Zhang;
Fei Yin;
Chun Lin;
Zhifeng Li;
Wei Lu

Publication type:

Article

HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 974, doi. 10.1007/s11664-010-1141-4

By:

Reddy, M.;
Peterson, J. M.;
Lofgreen, D. D.;
Vang, T.;
Patten, E. A.;
Radford, W. A.;
Johnson, S. M.

Publication type:

Article

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 986, doi. 10.1007/s11664-010-1122-7

By:

D'Souza, A. I.;
Stapelbroek, M. G.;
Wijewarnasuriya, P. S.

Publication type:

Article

Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si Heterostructures.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1036, doi. 10.1007/s11664-010-1085-8

By:

Jacobs, R. N.;
Smith, P. J.;
Markunas, J. K.;
Benson, J. D.;
Pellegrino, J.

Publication type:

Article

Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 967, doi. 10.1007/s11664-010-1142-3

By:

Brill, G.;
Farrell, S.;
Chen, Y. P.;
Wijewarnasuriya, P. S.;
Rao, Mulpuri V.;
Benson, J. D.;
Dhar, N.

Publication type:

Article

Wafer Mapping Using Deuterium Enhanced Defect Characterization.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 930, doi. 10.1007/s11664-010-1162-z

By:

Hossain, K.;
Holland, O. W.;
Hellmer, R.;
VanMil, B.;
Bubulac, L. O.;
Golding, T. D.

Publication type:

Article

Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 945, doi. 10.1007/s11664-010-1157-9

By:

Itsuno, A. M.;
Emelie, P. Y.;
Phillips, J. D.;
Velicu, S.;
Grein, C. H.;
Wijewarnasuriya, P. S.

Publication type:

Article

Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 951, doi. 10.1007/s11664-010-1152-1

By:

Jaime-Vasquez, M.;
Jacobs, R. N.;
Benson, J. D.;
Stoltz, A. J.;
Almeida, L. A.;
Bubulac, L. O.;
Chen, Y.;
Brill, G.

Publication type:

Article

Electronic and Optical Properties of Mg xZn1− xO and Be xZn1− xO Quantum Wells.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 936, doi. 10.1007/s11664-010-1163-y

By:

Furno, Enrico;
Chiaria, Simone;
Penna, Michele;
Bellotti, Enrico;
Goano, Michele

Publication type:

Article

Microstructural Characterization of CdTe Surface Passivation Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 924, doi. 10.1007/s11664-010-1176-6

By:

Zhao, W. F.;
Cook, J.;
Parodos, T.;
Tobin, S.;
Smith, David

Publication type:

Article

Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211).

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 908, doi. 10.1007/s11664-010-1200-x

By:

Badano, Giacomo;
Gergaud, Patrice;
Robin, Ivan C.;
Baudry, Xavier;
Amstatt, Benoît;
Gemain, Fréderique

Publication type:

Article

MBE-Grown II–VI and Related Nanostructures.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 882, doi. 10.1007/s11664-010-1215-3

By:

Sou, I. K.;
Lok, S. K.;
Wang, G.;
Wang, N.;
Wong, G. K. L.

Publication type:

Article

Growth of HgTe Quantum Wells for IR to THz Detectors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 918, doi. 10.1007/s11664-010-1191-7

By:

Dvoretsky, S.;
Mikhailov, N.;
Sidorov, Yu.;
Shvets, V.;
Danilov, S.;
Wittman, B.;
Ganichev, S.

Publication type:

Article

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 903, doi. 10.1007/s11664-010-1207-3

By:

Suarez, E.;
Gogna, M.;
Al-Amoody, F.;
Karmakar, S.;
Ayers, J.;
Heller, E.;
Jain, F.

Publication type:

Article

Radiation Damage in Type II Superlattice Infrared Detectors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 852, doi. 10.1007/s11664-010-1227-z

By:

Jackson, E. M.;
Aifer, E. H.;
Canedy, C. L.;
Nolde, J. A.;
Cress, C. D.;
Weaver, B. D.;
Vurgaftman, I.;
Warner, J. H.;
Meyer, J. R.;
Tischler, J. G.;
Shaw, S. A.;
Dedianous, C. R.

Publication type:

Article

MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 873, doi. 10.1007/s11664-010-1218-0

By:

Velicu, S.;
Grein, C. H.;
Emelie, P. Y.;
Itsuno, A.;
Philips, J. D.;
Wijewarnasuriya, P.

Publication type:

Article

Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 863, doi. 10.1007/s11664-010-1220-6

By:

Kwang-Chon Kim;
Hyun Jae Kim;
Sang-Hee Suh;
Carmody, M.;
Sivananthan, S.;
Jin-Sang Kim

Publication type:

Article

Photoluminescence Studies of HgCdTe Epilayers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 868, doi. 10.1007/s11664-010-1219-z

By:

Robin, I. C.;
Taupin, M.;
Derone, R.;
Ballet, P.;
Lusson, A.

Publication type:

Article

Effect of Hydrogen Free Radicals on Hg1− xCd xTe.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 857, doi. 10.1007/s11664-010-1222-4

By:

Wilks, J. A.;
Tavakoli, C. M.;
Kelber, J. A.

Publication type:

Article

HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 893, doi. 10.1007/s11664-010-1211-7

By:

Haakenaasen, R.;
Selvig, E.;
Tonheim, C. R.;
Kongshaug, K. O.;
Lorentzen, T.;
Trosdahl-Iversen, L.;
Andersen, J. B.;
Gundersen, P.

Publication type:

Article

Two-Dimensional Long-Wavelength and Very Long-Wavelength Focal-Plane Arrays at AIM.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 846, doi. 10.1007/s11664-010-1235-z

By:

Wenisch, J.;
Eich, D.;
Hanna, S.;
Bauer, A.;
Bitterlich, H.;
Bruder, M.;
Mahlein, K.-M.;
Lutz, H.;
Wollrab, R.;
Ziegler, J.

Publication type:

Article

Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 958, doi. 10.1007/s11664-010-1147-y

By:

Stoltz, A. J.;
Benson, J. D.;
Smith, P. J.

Publication type:

Article

Shockley–Haynes Characterization of Minority-Carrier Drift Velocity, Diffusion Coefficient, and Lifetime in HgCdTe Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 837, doi. 10.1007/s11664-010-1247-8

By:

Rothman, Johan;
Vojetta, G.;
Moselle, B.;
Mollard, L.;
Gout, S.;
Chamonal, J.-P.

Publication type:

Article

Full-Band Monte Carlo Simulation of HgCdTe APDs.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 912, doi. 10.1007/s11664-010-1198-0

By:

Bertazzi, Francesco;
Moresco, Michele;
Penna, Michele;
Goano, Michele;
Bellotti, Enrico

Publication type:

Article

Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1097, doi. 10.1007/s11664-010-1206-4

By:

Bellotti, Enrico;
Paiella, Roberto

Publication type:

Article

Atmospheric Effects on the Performance of CdZnTe Single-Crystal Detectors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1104, doi. 10.1007/s11664-010-1193-5

By:

Washington, Aaron L.;
Teague, Lucile C.;
Duff, Martine C.;
Burger, Arnold;
Groza, Michael;
Buliga, Vladimir

Publication type:

Article

Foreword.

Published in:

2010

By:

Sivananthan, S.;
Dhar, N. K.;
Anter, Y.;
Casselman, T. N.

Publication type:

Editorial

Characterization of Dislocations in (112)B HgCdTe/CdTe/Si.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1080, doi. 10.1007/s11664-010-1262-9

By:

Benson, J. D.;
Bubulac, L. O.;
Smith, P. J.;
Jacobs, R. N.;
Markunas, J. K.;
Jaime-Vasquez, M.;
Almeida, L. A.;
Stoltz, A. J.;
Wijewarnasuriya, P. S.;
Brill, G.;
Chen, Y.;
Lee, U.;
Vilela, M. F.;
Peterson, J.;
Johnson, S. M.;
Lofgreen, D. D.;
Rhiger, D.;
Patten, E. A.;
Goetz, P. M.

Publication type:

Article

Analysis of Current–Voltage Measurements on Long-Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1110, doi. 10.1007/s11664-010-1257-6

By:

Wijewarnasuriya, Priyalal;
Yuanping Chen;
Brill, Greg;
Dhar, Nibir;
Benson, David;
Bubulac, Lucia;
Edwall, Dennis

Publication type:

Article

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1118, doi. 10.1007/s11664-010-1241-1

By:

Yasuda, K.;
Niraula, M.;
Oka, H.;
Yoneyama, T.;
Matsumoto, K.;
Nakashima, H.;
Nakanishi, T.;
Katoh, D.;
Agata, Y.

Publication type:

Article

Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1087, doi. 10.1007/s11664-010-1249-6

By:

Dreiske, P.;
Carmody, M.;
Grein, C. H.;
Zhao, J.;
Bommena, R.;
Kilbourne, C. A.;
Kelley, R.;
McCammon, D.;
Brandl, D.

Publication type:

Article