Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 9
Results: 28
Electrical Properties of Isotropic Conductive Adhesives Composed of Silicone-Based Elastomer Binders Containing Ag Particles.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 2013, doi. 10.1007/s11664-009-0837-9
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p-Type PbTe Thermoelectric Bulk Materials with Nanograins Fabricated by Attrition Milling and Spark Plasma Sintering.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1956, doi. 10.1007/s11664-009-0677-7
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Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF<sub>2</sub> (110) Substrate.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1952, doi. 10.1007/s11664-009-0796-1
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Monitoring the Growth of the α Phase in Tin Alloys by Electrical Resistance Measurements.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1874, doi. 10.1007/s11664-009-0822-3
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Femtosecond Laser Drilling of Alumina Wafers.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 2006, doi. 10.1007/s11664-009-0811-6
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Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 2000, doi. 10.1007/s11664-009-0830-3
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Low Fatigue in Epitaxial Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub> on Si Substrates with LaNiO<sub>3</sub> Electrodes by RF Sputtering.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1921, doi. 10.1007/s11664-009-0836-x
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Characterization of Zn<sub>1− x</sub>Mg<sub> x</sub>O Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1962, doi. 10.1007/s11664-009-0835-y
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Study of Solidification Cracks in Sn-Ag-Cu Lead-Free Solder Joints.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1906, doi. 10.1007/s11664-009-0839-7
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Preparation and Characterization of Ultrasonically Sprayed Zinc Oxide Thin Films Doped with Lithium.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1969, doi. 10.1007/s11664-009-0828-x
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Constitutive Relations for Creep in a SnCu-Based Composite Solder Reinforced with Ag Particles.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1866, doi. 10.1007/s11664-009-0840-1
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Electrical Properties of Organic–Inorganic Semiconductor Device Based on Rhodamine-101.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1995, doi. 10.1007/s11664-009-0838-8
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Interband Cascade Lasers with Wavelengths Spanning 3.2–4.2 μm.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1948, doi. 10.1007/s11664-009-0733-3
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Two Layer Surface Exfoliation on Si<sub>3</sub>N<sub>4</sub>/Si by Sequential Implantation of He and H Ions.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1990, doi. 10.1007/s11664-009-0768-5
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Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1926, doi. 10.1007/s11664-009-0862-8
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How r-Plane Al<sub>2</sub>O<sub>3</sub> Surface Modifications Impact the Growth of Epitaxial (001) CeO<sub>2</sub> Thin Films.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1931, doi. 10.1007/s11664-009-0864-6
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Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 1: Eutectic Lead Solder.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1838, doi. 10.1007/s11664-009-0869-1
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Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 2: Lead-Free Solders.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1846, doi. 10.1007/s11664-009-0870-8
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Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part II: Experimental Study.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1826, doi. 10.1007/s11664-009-0882-4
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Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1815, doi. 10.1007/s11664-009-0879-z
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Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low- k Samples.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1913, doi. 10.1007/s11664-009-0843-y
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A Novel Mechanism of Embrittlement Affecting the Impact Reliability of Tin-Based Lead-Free Solder Joints.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1881, doi. 10.1007/s11664-009-0841-0
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Fracture Mechanics of Solder Bumps During Ball Shear Testing: Effect of Bump Size.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1896, doi. 10.1007/s11664-009-0842-z
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Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1979, doi. 10.1007/s11664-009-0846-8
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Intermetallic Reaction of Indium and Silver in an Electroplating Process.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1860, doi. 10.1007/s11664-009-0845-9
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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1938, doi. 10.1007/s11664-009-0847-7
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Constitutive Relations of Indium in Extreme-Temperature Electronic Packaging Based on Anand Model.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1855, doi. 10.1007/s11664-009-0765-8
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Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes.
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- Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1944, doi. 10.1007/s11664-009-0850-z
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