Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 9

Results: 52

Effect of Atmosphere on n-Type Hg1-xCdxTe Surface after Different Wet Etching Treatments: An Electrical and Structural Study.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1471, doi. 10.1007/s11664-008-0494-4
By:
- KIRAN, R.;
- SPORKEN, R.;
- CASSELMAN, T. N.;
- EMELIE, P. Y.;
- KODAMA, R.;
- CHANG, Y.;
- AQARIDEN, F.;
- VELICU, S.;
- ZHAO, J.;
- SIVANANTHAN, S.
Publication type:
Article
Erratum.
Published in:
2008
Publication type:
Correction Notice
Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1480, doi. 10.1007/s11664-008-0519-z
By:
- JACOBS, R. N.;
- ALMEIDA, L. A.;
- MARKUNAS, J.;
- PELLEGRINO, J.;
- GROENERT, M.;
- JAIME-VASQUEZ, M.;
- MAHADIK, N.;
- ANDREWS, C.;
- QADRI, S. B.;
- LEE, T.;
- KIM, M.
Publication type:
Article
Avalanche Mechanism in p+-n--n+ and p+ -n Mid-Wavelength Infrared Hg1-xCdxTe Diodes on Si Substrates.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1488, doi. 10.1007/s11664-008-0518-0
By:
- MALLICK, SHUBHRANGSHU;
- BANERJEE, KOUSHIK;
- VELICU, SILVIU;
- GREIN, CHRISTOPH;
- GHOSH, SIDDHARTHA;
- ZHAO, JUN
Publication type:
Article
Foreword.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1165, doi. 10.1007/s11664-008-0505-5
By:
- Sivananthan, S.;
- Anter, Y.;
- Dhar, N. K.
Publication type:
Article
Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1200, doi. 10.1007/s11664-008-0480-x
By:
- WANG, X. J.;
- FULK, C.;
- ZHAO, F. H.;
- LI, D. H.;
- MUKHERJEE, S.;
- CHANG, Y.;
- SPORKEN, R.;
- KLIE, R.;
- SHI, Z.;
- GREIN, C. H.;
- SIVANANTHAN, S.
Publication type:
Article
Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1212, doi. 10.1007/s11664-008-0479-3
By:
- BELAS, E.;
- BUGÁR, M.;
- GRILL, R.;
- FRANC, J.;
- MORAVEC, P.;
- HLÍDEK, P.;
- HÖSCHL, P.
Publication type:
Article
Electromagnetic Modeling of n-on-p HgCdTe Back-Illuminated Infrared Photodiode Response.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1205, doi. 10.1007/s11664-008-0478-4
By:
- GRAVRAND, O.;
- GIDON, S.
Publication type:
Article
Traces of HgCdTe Defects as Revealed by Etch Pits.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1241, doi. 10.1007/s11664-008-0465-9
By:
- YANG, J. R.;
- CAO, X. L.;
- WEI, Y. F.;
- HE, L.
Publication type:
Article
Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1219, doi. 10.1007/s11664-008-0471-y
By:
- ELHADIDY, HASSAN;
- FRANC, JAN;
- BELAS, EDUARD;
- HLÍDEK, PAVEL;
- MORAVEC, PAVEL;
- GRILL, ROMAN;
- HOSCHL, PAVEL
Publication type:
Article
Structural Analysis of CdTe Hetero-epitaxy on (211) Si.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1231, doi. 10.1007/s11664-008-0469-5
By:
- BENSON, J. D.;
- JACOBS, R. N.;
- MARKUNAS, J. K.;
- JAIME-VASQUEZ, M.;
- SMITH, P. J.;
- ALMEIDA, L. A.;
- MARTINKA, M.;
- VILELA, M. F.;
- LEE, U.
Publication type:
Article
Modeling of the Structural Properties of Hg1-xCdxTe.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1166, doi. 10.1007/s11664-008-0468-6
By:
- BENSON, J. D.;
- MARTINKA, M.
Publication type:
Article
Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1225, doi. 10.1007/s11664-008-0467-7
By:
- STOLTZ, A. J.;
- BENSON, J. D.;
- SMITH, P. J.
Publication type:
Article
Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1171, doi. 10.1007/s11664-008-0477-5
By:
- YONG CHANG;
- BECKER, C. R.;
- GREIN, C. H.;
- ZHAO, J.;
- FULK, C.;
- CASSELMAN, T.;
- KIRAN, R.;
- WANG, X. J.;
- ROBINSON, E.;
- AN, S. Y.;
- MALLICK, S.;
- SIVANANTHAN, S.;
- AOKI, T.;
- WANG, C. Z.;
- SMITH, D. J.;
- VELICU, S.;
- CROCCO, J.;
- CHEN, Y.;
- BRILL, G.;
- WIJEWARNASURIYA, P. S.
Publication type:
Article
Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1247, doi. 10.1007/s11664-008-0460-1
By:
- JAIME-VASQUEZ, M.;
- MARTINKA, M.;
- STOLTZ, A. J.;
- JACOBS, R. N.;
- BENSON, J. D.;
- ALMEIDA, L. A.;
- MARKUNAS, J. K.
Publication type:
Article
Impulse Response Time Measurements in Hg0.7Cd0.3Te MWIR Avalanche Photodiodes.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1261, doi. 10.1007/s11664-008-0459-7
By:
- PERRAIS, GWLADYS;
- ROTHMAN, JOHAN;
- DESTEFANIS, GERARD;
- CHAMONAL, JEAN-PAUL
Publication type:
Article
ZnO TFT Devices Built on Glass Substrates.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1237, doi. 10.1007/s11664-008-0457-9
By:
- ZHU, J.;
- CHEN, H.;
- SARAF, G.;
- DUAN, Z.;
- LU, Y.;
- HSU, S. T.
Publication type:
Article
Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1255, doi. 10.1007/s11664-008-0456-x
By:
- BOMMENA, R.;
- SELDRUM, T.;
- SAMAIN, L.;
- SPORKEN, R.;
- SIVANANTHAN, S.;
- BRUECK, S. R. J.
Publication type:
Article
Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1283, doi. 10.1007/s11664-008-0455-y
By:
- WIJEWARNASURIYA, PRIYALAL S.;
- EMELIE, P. Y.;
- D'SOUZA, ARVIND;
- BRILL, GREGORY;
- STAPELBROEK, MARYN G.;
- VELICU, SILVIU;
- YUANPING CHEN;
- GREIN, CHRIS;
- SIVANANTHAN, SIVALINGAM;
- DHAR, NIBIR K.
Publication type:
Article
As Doping in (Hg,Cd)Te: An Alternative Point of View.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1291, doi. 10.1007/s11664-008-0452-1
By:
- HAILS, JANET E.;
- IRVINE, STUART J. C.;
- COLE-HAMILTON, DAVID J.;
- GIESS, JEAN;
- HOULTON, MICHAEL R.;
- GRAHAM, ANDREW
Publication type:
Article
Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1303, doi. 10.1007/s11664-008-0449-9
By:
- ROTHMAN, JOHAN;
- PERRAIS, GWLADYS;
- BALLET, PHILIPPE;
- MOLLARD, L.;
- GOUT, S.;
- CHAMONAL, J.-P.
Publication type:
Article
Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1438, doi. 10.1007/s11664-008-0448-x
By:
- HAWKINS, SAMANTHA A.;
- VILLA-ALEMAN, ELIEL;
- DUFF, MARTINE C.;
- HUNTER, DOUG B.;
- BURGER, ARNOLD;
- GROZA, MICHAEL;
- BULIGA, VLADIMIR;
- BLACK, DAVID R.
Publication type:
Article
Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1444, doi. 10.1007/s11664-008-0447-y
By:
- SELVIG, E.;
- TONHEIM, C. R.;
- LORENTZEN, T.;
- KONGSHAUG, K. O.;
- SKAULI, T.;
- HAAKENAASEN, R.
Publication type:
Article
LWIR HgCdTe Detectors Grown on Ge Substrates.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1465, doi. 10.1007/s11664-008-0443-2
By:
- VILELA, M. F.;
- LOFGREEN, D. D.;
- SMITH, E. P. G.;
- NEWTON, M. D.;
- VENZOR, G. M.;
- PETERSON, J. M.;
- FRANKLIN, J. J.;
- REDDY, M.;
- THAI, Y.;
- PATTEN, E. A.;
- JOHNSON, S. M.;
- TIDROW, M. Z.
Publication type:
Article
Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1460, doi. 10.1007/s11664-008-0442-3
By:
- MULLINS, J. T.;
- CANTWELL, B. J.;
- BASU, A.;
- JIANG, Q.;
- CHOUBEY, A.;
- BRINKMAN, A. W.;
- TANNER, B. K.
Publication type:
Article
MBE HgCdTe on Alternative Substrates for FPA Applications.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1189, doi. 10.1007/s11664-008-0441-4
By:
- LI HE;
- XIANGLIANG FU;
- QINGZHU WEI;
- WEIQIANG WANG;
- LU CHEN;
- YAN WU;
- XIAONING HU;
- JIANRONG YANG;
- QINYAO ZHANG;
- RUIJUN DING;
- XIAOSHUANG CHEN;
- WEI LU
Publication type:
Article
Junction Stability in Ion-Implanted Mercury Cadmium Telluride.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1329, doi. 10.1007/s11664-008-0440-5
By:
- CHANDRA, D.;
- SCHAAKE, H. F.;
- KINCH, M. A.
Publication type:
Article
A Theoretical Model for the HgCdTe Electron Avalanche Photodiode.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1453, doi. 10.1007/s11664-008-0439-y
By:
- KINCH, MICHAEL A.
Publication type:
Article
Numerical Analysis of a Very Long-Wavelength HgCdTe Pixel Array for Infrared Detection.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1349, doi. 10.1007/s11664-008-0438-z
By:
- D'ORSOGNA, DANILO;
- TOBIN, STEPHEN P.;
- BELLOTTI, ENRICO
Publication type:
Article
Nanotrenches Induced by Catalyst Particles on ZnSe Surfaces.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1344, doi. 10.1007/s11664-008-0437-0
By:
- CHAN, S. K.;
- LOK, S. K.;
- WANG, G.;
- CAI, Y.;
- WANG, N.;
- SOU, I. K.
Publication type:
Article
Al- and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge Mitigation.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1324, doi. 10.1007/s11664-008-0436-1
By:
- LENNON, C.;
- KODAMA, R.;
- CHANG, Y.;
- SIVANANTHAN, S.;
- DESHPANDE, M.
Publication type:
Article
Status of LWIR HgCdTe-on-Silicon FPA Technology.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1184, doi. 10.1007/s11664-008-0434-3
By:
- CARMODY, M.;
- PASKO, J. G.;
- EDWALL, D.;
- PIQUETTE, E.;
- KANGAS, M.;
- FREEMAN, S.;
- ARIAS, J.;
- JACOBS, R.;
- MASON, W.;
- STOLTZ, A.;
- CHEN, Y.;
- DHAR, N. K.
Publication type:
Article
Gated IR Imaging with 128 x 128 HgCdTe Electron Avalanche Photodiode FPA.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1334, doi. 10.1007/s11664-008-0433-4
By:
- BECK, JEFF;
- WOODALL, MILTON;
- SCRITCHFIELD, RICHARD;
- OHLSON, MARTHA;
- WOOD, LEWIS;
- MITRA, PRADIP;
- ROBINSON, JIM
Publication type:
Article
Noise Attributes of LWIR HDVIP HgCdTe Detectors.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1318, doi. 10.1007/s11664-008-0432-5
By:
- D'SOUZA, A. I.;
- STAPELBROEK, M. G.;
- ROBINSON, E. W.;
- YONEYAMA, C.;
- MILLS, H. A.;
- KINCH, M. A.;
- SKOKAN, M. R.;
- SHIH, H. D.
Publication type:
Article
Effects of Surface Processing on the Response of CZT Gamma Detectors: Studies with a Collimated Synchrotron X-Ray Beam.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1356, doi. 10.1007/s11664-008-0431-6
By:
- HOSSAIN, A.;
- BOLOTNIKOV, A. E.;
- CAMARDA, G. S.;
- CUI, Y.;
- BABALOLA, S.;
- BURGER, A.;
- JAMES, R. B.
Publication type:
Article
Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1391, doi. 10.1007/s11664-008-0430-7
By:
- YOKOTA, M.;
- YASUDA, K.;
- NIRAULA, M.;
- NAKAMURA, K.;
- OHASHI, H.;
- TANAKA, R.;
- OMURA, M.;
- MINOURA, S.;
- SHINGU, I.;
- AGATA, Y.
Publication type:
Article
Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1497, doi. 10.1007/s11664-008-0429-0
By:
- ZOGG, H.;
- ARNOLD, M.;
- FELDER, F.;
- RAHIM, M.;
- EBNETER, C.;
- ZASAVITSKIY, I.;
- QUACK, N.;
- BLUNIER, S.;
- DUAL, J.
Publication type:
Article
High-Operating-Temperature MWIR Detector Diodes.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1401, doi. 10.1007/s11664-008-0423-6
By:
- SCHAAKE, H. F.;
- KINCH, M. A.;
- CHANDRA, D.;
- AQARIDEN, F.;
- LIAO, P. K.;
- WEIRAUCH, D. F.;
- WAN, C.-F.;
- SCRITCHFIELD, R. E.;
- SULLIVAN, W. W.;
- TEHERANI, J. T.;
- SHIH, H. D.
Publication type:
Article
Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1362, doi. 10.1007/s11664-008-0427-2
By:
- EMELIE, P. Y.;
- VELICU, S.;
- GREIN, C. H.;
- PHILLIPS, J. D.;
- WIJEWARNASURIYA, P. S.;
- DHAR, N. K.
Publication type:
Article
MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by "Rule 07", a Very Convenient Heuristic.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1406, doi. 10.1007/s11664-008-0426-3
By:
- TENNANT, W. E.;
- LEE, DONALD;
- ZANDIAN, MAJID;
- PIQUETTE, ERIC;
- CARMODY, MICHAEL
Publication type:
Article
Modeling of Copper SIMS Profiles in Thin HgCdTe.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1387, doi. 10.1007/s11664-008-0425-4
By:
- SCHAAKE, H. F.;
- KINCH, M. A.;
- AQARIDEN, F.
Publication type:
Article
Anisotropic Surface Roughness in Molecular-Beam Epitaxy CdTe (211)B/Ge(211).
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1369, doi. 10.1007/s11664-008-0424-5
By:
- BADANO, GIACOMO;
- BAUDRY, XAVIER;
- BALLET, PHILIPPE;
- DUVAUT, PHILIPPE;
- MILLION, ALAIN;
- MICOUD, ERIC;
- KAISMOUNE, SABEUR;
- FOUGÈRES, PAUL;
- MIBORD, SOPHIE;
- TRAN-VAN, PIERRE;
- ETCHEBERRY, ARNAUD
Publication type:
Article
MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1274, doi. 10.1007/s11664-008-0428-1
By:
- REDDY, M.;
- PETERSON, J. M.;
- LOFGREEN, D. D.;
- FRANKLIN, J. A.;
- VANG, T.;
- SMITH, E. P. G.;
- WEHNER, J. G. A.;
- KASAI, I.;
- BANGS, J. W.;
- JOHNSON, S. M.
Publication type:
Article
Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1396, doi. 10.1007/s11664-008-0421-8
By:
- PIQUETTE, E. C.;
- EDWALL, D. D.;
- ARNOLD, H.;
- CHEN, A.;
- AUYEUNG, J.
Publication type:
Article
Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1376, doi. 10.1007/s11664-008-0420-9
By:
- REINE, M. B.;
- MARCINIEC, J. W.;
- WONG, K. K.;
- PARODOS, T.;
- MULLARKEY, J. D.;
- LAMARRE, P. A.;
- TOBIN, S. P.;
- MINICH, R. W.;
- GUSTAVSEN, K. A.;
- COMPTON, M.;
- WILLIAMS, G. M.
Publication type:
Article
An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1420, doi. 10.1007/s11664-008-0419-2
By:
- DE LYON, T. J.;
- RAJAVEL, R. D.;
- HUNTER, A. T.;
- JENSEN, J. E.;
- JACK, M. D.;
- BAILEY, S. L.;
- KVAAS, R. E.;
- RANDALL, V. K.;
- JOHNSON, S. M.
Publication type:
Article
Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1411, doi. 10.1007/s11664-008-0418-3
By:
- ELIZONDO, S. L.;
- ZHAO, F.;
- KAR, J.;
- MA, J.;
- SMART, J.;
- LI, D.;
- MUKHERJEE, S.;
- SHI, Z.
Publication type:
Article
Modeling of Recombination in HgCdTe.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1415, doi. 10.1007/s11664-008-0417-4
By:
- GREIN, C. H.;
- FLATTÉ, M. E.;
- YONG CHANG
Publication type:
Article
ZnO and Related Materials for Sensors and Light-Emitting Diodes.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1426, doi. 10.1007/s11664-008-0416-5
By:
- PEARTON, S. J.;
- LIM, W. T.;
- WRIGHT, J. S.;
- TIEN, L. C.;
- KIM, H. S.;
- NORTON, D. P.;
- WANG, H. T.;
- KANG, B. S.;
- REN, F.;
- JUN, J.;
- LIN, J.;
- OSINSKY, A.
Publication type:
Article
Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices.
Published in:
Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1504, doi. 10.1007/s11664-008-0415-6
By:
- VELICU, S.;
- GREIN, C. H.;
- ZHAO, J.;
- CHANG, Y.;
- AN, S.-Y.;
- YADAV, A.;
- PIPE, K.;
- CLARK, W.
Publication type:
Article